• ETRI Journal
• /
• 제37권5호
• /
• pp.945-950
• /
• 2015

A novel microstrip low-pass filter is presented to achieve an ultra-wide stopband with 11 harmonic suppression and very sharp skirt characteristics. The filter is composed of a modified U-shaped resonator (which creates two fully adjustable transmission zeroes), a T-shaped resonator (which determines a cut-off frequency), and four radial stubs (which provide a wider stopband). The operating mechanism of the filter is investigated based on a proposed equivalent-circuit model, and the role of each section of the proposed filter in creating null points is theoretically discussed in detail. The presented filter with 3 dB cut-off frequency ($f_c=2.35GHz$) has been fabricated and measured. Results show that a relative stopband bandwidth of 164% (referred to as a 22 dB suppression) is obtained while achieving a high figure-of-merit of 15,221.

• 전기학회논문지
• /
• 제67권9호
• /
• pp.1159-1164
• /
• 2018

Vacuum circuit breakers(VCB) are widely used for current interruption of high-voltage inductive loads such as induction motors. This VCB can be chopped off before the current zero due to its high arc-extinguishing capability. One of the outstanding features of VCB is that it can cut off high frequency re-ignition current more than other circuit breakers. If the transient recovery voltage generated in the arc extinguishing is higher than the dielectric strength of the circuit breaker, a re-ignition phenomenon occurs. The surge voltage of the re-ignition is very high in magnitude and the steepness of the waveform is so severe that it can act as a high electrical stress on the winding. If the high frequency current of one phase affects the other two phases when the re-ignition occurs, it may cause a high surge voltage due to the virtual current chopping. If the magnitude of the voltage allowed in the motor winding is high or the waveform level is too severe, it may lead to insulation breakdown. Therefore, it is necessary to reduce the voltage to within a certain range. In this study, we briefly explain the various phenomena at the time of interruption, analyzed the magnitude of the dielectric strength and the transient recovery voltage at the simultaneous three-phase interruption that can give the greatest influence to the inductive load, proposed a method to reduce the impact.

• 한국세라믹학회지
• /
• 제29권8호
• /
• pp.639-645
• /
• 1992

Effects of additives on electromagnetic properties of a Ni-Cu-Zn ferrite for a noise filter in high frequency regions were studied. Both resistivity and permeability were increased with the amount of Mn2O3 up to 1wt%, then decreased with further addition. Addition of Co2O3 decreased the permeability of the ferrite and shifted the resonance frequency to a higher frequency region, which was thought due to the stabilization of domain walls. Therefore it was possible to improve both the permeability and the loss and to control the cut-off frequency by the concurrent addition of Mn2O3 and Co2O3.

• Journal of electromagnetic engineering and science
• /
• 제13권2호
• /
• pp.127-133
• /
• 2013

We examined the scaling effects of a number of gate_fingers (N) and gate_widths (w) on the high-frequency characteristics of $0.1-{\mu}m$ metamorphic high-electron-mobility transistors. Functional relationships of the extracted small-signal parameters with total gate widths ($w_t$) of different N were proposed. The cut-off frequency ($f_T$) showed an almost independent relationship with $w_t$; however, the maximum frequency of oscillation ($f_{max}$) exhibited a strong functional relationship of gate-resistance ($R_g$) influenced by both N and $w_t$. A greater $w_t$ produced a higher $f_{max}$; but, to maximize $f_{max}$ at a given $w_t$, to increase N was more efficient than to increase the single gate_width.

• 한국진공학회지
• /
• 제9권2호
• /
• pp.167-171
• /
• 2000

AlGaAs/GaAs HBT의 동작특성에 미치는 에미터 구조의 영향을 조사하였다. 에미터의 크기 변화에 의해 차단주파수와 최대공진주파수가 변화하였으며, 이는 에미터 구조에 따라 저항과 접합용량이 변하기 때문이다. 또한 에미터의 주변길이와 접합면적도 HBT의 고주파 특성에 영향을 미치는 것을 알 수 있다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제8권3호
• /
• pp.251-263
• /
• 2008

In this paper, we report an analytical modeling and 2-D Synopsys Sentaurus TCAD simulation of ion implanted silicon carbide MESFETs. The model has been developed to obtain the threshold voltage, drain-source current, intrinsic parameters such as, gate capacitance, drain-source resistance and transconductance considering different fabrication parameters such as ion dose, ion energy, ion range and annealing effect parameters. The model is useful in determining the ion implantation fabrication parameters from the optimization of the active implanted channel thickness for different ion doses resulting in the desired pinch off voltage needed for high drain current and high breakdown voltage. The drain current of approximately 10 A obtained from the analytical model agrees well with that of the Synopsys Sentaurus TCAD simulation and the breakdown voltage approximately 85 V obtained from the TCAD simulation agrees well with published experimental results. The gate-to-source capacitance and gate-to-drain capacitance, drain-source resistance and trans-conductance were studied to understand the device frequency response. Cut off and maximum frequencies of approximately 10 GHz and 29 GHz respectively were obtained from Sentaurus TCAD and verified by the Smith's chart.

• 대한통합의학회지
• /
• 제10권3호
• /
• pp.107-117
• /
• 2022

Purpose : The purpose of this study was to establish a model of the predictive factors for success or failure of examinees undertaking the Korean physical therapist licensing examination (KPTLE). Additionally, we assessed the pass/fail cut-off point. Methods : We analyzed the results of 10,881 examinees who undertook the KPTLE, using data provided by the Korea Health Personnel Licensing Examination Institute. The target variable was the test result (pass or fail), and the input variables were: sex, age, test subject, and total score. Frequency analysis, chi-square test, descriptive statistics, independent t-test, correlation analysis, binary logistic regression, and receiver operating characteristic (ROC) curve analyses were performed on the data. Results : Sex and age were not significant predictors of attaining a pass (p>.05). The test subjects with the highest probability of passing were, in order, medical regulation (MR) (Odds ratio (OR)=2.91, p<.001), foundations of physical therapy (FPT) (OR=2.86, p<.001), diagnosis and evaluation for physical therapy (DEPT) (OR=2.74, p<.001), physical therapy intervention (PTI) (OR=2.66, p<.001), and practical examination (PE) (OR=1.24, p<.001). The cut-off points for each subject were: FPT, 32.50; DEPT, 29.50; PTI, 44.50; MR, 14.50; and PE, 50.50. The total score (TS) was 164.50. The sensitivity, specificity, and the classification accuracy of the prediction model was 99 %, 98 %, and 99 %, respectively, indicating high accuracy. Area under the curve (AUC) values for each subject were: FPT, .958; DEPT, .968; PTI, .984; MR, .885; PE, .962; and TS, .998, indicating a high degree of fit. Conclusion : In our study, the predictive factors for passing KPTLE were identified, and the optimal cut-off point was calculated for each subject. Logistic regression was adequate to explain the predictive model. These results will provide universities and examinees with useful information for predicting their success or failure in the KPTLE.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
• /
• pp.189-192
• /
• 2001

We have studied fabrication processes that form asymmetric $\Gamma$-gate with a 0.1${\mu}{\textrm}{m}$ gate length in MMIC's(Monolithic Microwave Integrated Circuits). Asymmetric $\Gamma$-gate was fabricated using mixture of PMMA and MCB. Thus pseudomorphic high electron mobility transistor (PHEMT's) with 0.1${\mu}{\textrm}{m}$ gate length was fabricated via several steps such as mesa isolation, metalization, recess, passivation. PHEMT's has the -1.75 V of pinch-off voltage (Vp), 63 mA of drain saturation current(Idss and 363.6 mS/mm of maximum transconductance (Gm) in DC characteristics and current gain cut-off frequency of 106 GHz and maximum frequency of oscillation of 160 GHz in RF characteristics.

• 한국진공학회지
• /
• 제15권6호
• /
• pp.637-641
• /
• 2006

본 논문에서는 100 nm 게이트 길이를 갖는 InGaAs/InAlAs/GaAs MHEMT(metamorphic high electron mobility transistors)m의 DC와 RF 특성을 분석 하였다. 이중 노광 방법으로 ZEP520/P(MMA-MAA)/PMMA 3층 구조의 레지스터와 게이트 길이 100 nm인 게이트를 제작하였다. 게이트의 단위 폭이 $70\;{\mu}m$인 2개의 게이트와 길이가 100 nm로 제작된 MHEMT를 DC 및 RF특성을 조사하였다. 최대 드레인 전류 밀도는 465 mA/mm, 상호전달 컨덕턴스는 844 mS/mm이, RF 측정으로부터 전류 이득 차단 주파수는 192 GHz와 최대 진동주파수 310 GHz인 특성을 보였다.

• 대한안전경영과학회지
• /
• 제17권3호
• /
• pp.377-381
• /
• 2015

For the first time, PLL frequency synthesizer using DDS was adapted for the data link communication system which should fast transmit and receive each other with the correct information and fast Hopping System. It is inevitable to lost the synchronization by slow lock time about PLL and no cut off the noise. This paper propose the design of PLL frequency synthesizer which can make 800MHz frequency range. The PLL frequency synthesizer has three high qualities those are frequency accuracy, fast lock time and outstanding phase noise.