• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.5
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• pp.283-288
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• 2000

In this work, small-size, high-performance simple solenoid-type RF chip inductors utilizing an Al2O3 core material were investigated. Copper (Cu) wire with $40\mum$ diameter was used as the coils and the size of the chip inductor fabricated in this work was $2.1mm\times1.5mm\times1.0mm$. The external current source was applied after bonding Cu coil leads to gold pads electro-plated on each end of backsides of a core material. High frequency characteristics of the inductance (L), quality factor (Q), and impedance (Z) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). This HP4291B was also used to obtain the equivalent circuit and its circuit parameters of the chip inductors. This HP4291B was also used to obtain the equivalent circuit and its circuit parameters of the chip inductors. The developed inductors have the self-resonant frequency (SRF) of 1.1 to 3.1 GHz and exhibit L of 22 to 150 nH. The L of the inductors decreases with increasing the SRF. The Z of the inductors has the maximum value at the SRF and the inductors have the quality factor of 70 to 97 in the frequency range of 500 MHz to 1.5 GHz.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.225-225
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• 2010

In this study, the optimum structure of a magnetic thin film inductor was designed for application of DC-DC converters. The $Ni_{81}Fe_{19}$ (at%) alloy was selected as a high-frequency($\geq$ MHz) magnetic thin film core material and deposited on various substrates (bare Si, $SiO_2$ coated Si) using a high vacuum RF magnetron sputtering system. As-deposited NiFe thin films show similar magnetic properties compared to bulk NiFe alloys, indicating that they have a good film quality. The optimum design of solenoid-type magnetic thin film inductors was performed utilizing a Maxwell computer simulator (Ansoft HFSS V7.0 for PC) and parameters obtained from the magnetic properties of magnetic core materials selected. The high-frequency characteristics of the inductance(L) and quality factor(Q) obtained for the designed inductors through simulation agreed well with those obtained by theoretical calculations, confirming that the simulated result is realistic. The optimum structure of high-performance ($Q{\geq}60$, $L\;=\;1{\mu}H$, efficiency${\geq}90%$), high-frequency (${\geq}5MHz$), and solenoid-type magnetic thin film inductors was designed successfully.

• Journal of the Korean Ceramic Society
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• v.40 no.11
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• pp.1090-1095
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• 2003

In this paper, the modeling and design of high-Q multilayer passives and multilayer diplexer for GSM/DCS applications designed and fabricated using these passives have been investigated.. To miniaturize the system, configurations of inductor and capacitor have involved a square spiral structure and a vertically-interdigitated capacitor similar to 3D interdigital structure, respectively. Multilayer diplexers for GSM/DCS applications were designed and fabricated to apply high-Q multilayer passives to practical systems, which were designed by the proposed structural and equivalent circuit model. LPF for GSM band had the passband insertion loss of less than 0.55 dB, the return loss of more than 12 dB, and the isolation level of more than 26 dB by locating attenuation pole at 1800 MHz. HPF for DCS band had the passband insertion loss of less than 0.82 dB, the return loss of more than 11 dB, and the isolation level of more than 38 dB by locating attenuation pole at 930 MHz.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.11
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• pp.501-507
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• 2003

In this study, microscale, high-performance, solenoid-type RF chip inductors were investigated. The size of the RF chip inductors fabricated in this work was 1.0${\times}$0.5${\times}$0.5㎣. 96% $Al_2$ $O_3$and I-type were used as the material and shape of the core, respectively. The copper (Cu) wire with 6 turns was employed as the coils. The diameter (40${\mu}{\textrm}{m}$) and position (middle) of the coil and the length (0.35mm) of solenoid were determined by a high-frequency structure simulator (HFSS) to maximize the performance of the inductors. High frequency characteristics of the inductance (L) and quality-factor (Q) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). The inductors developed have inductances of 10.8nH and quality factors of 25.2 to 50 over the frequency ranges of 250MHz to l GHz, and show results comparable to those measured for the inductors prepared by CoilCraf $t^{Tm}$ . The simulated data predicted the high-frequency data of the L and Q of the inductors developed well.l.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.1
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• pp.39-44
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• 2008

In this paper, fully embedded 2.4GHz WLAN band pass filter (BPF) was investigated into a multi-layered organic packaging substrate using high Q spiral stacked inductors and high Dk MIM capacitors for low cost RF System on Package (SOP) applications. The proposed 2.4GHz WLAN BPF was designed by modifying chebyshev second order filter circuit topology. It was comprised of two parallel LC resonators for obtaining two transmission zeros. It was designed by using 2D circuit and 3D EM simulators for finding out optimal geometries and verifying their applicability. It exhibited an insertion loss of max -1.7dB and return loss of min -l7dB. The two transmission zeros were observed at 1.85 and 6.7GHz, respectively. In the low frequency band of $1.8GHz{\sim}1.9GHz$, the stop band suppression of min -23dB was achieved. In the high frequency band of $4.1GHz{\sim}5.4GHz$, the stop band suppression of min -l8dB was obtained. It was the first embedded and the smallest one of the filters formed into the organic packaging substrate. It has a size of $2.2{\times}1.8{\times}0.77mm^3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.291-294
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• 1996

We present the experimental results of high quality factor (Q) inductors fabricated on high-resistivity silicon wafer using standard CMOS process without any modificatons such as thick gold layer or multilayer interconnection. This demonstrates the possibility of building high Q inductors using lower cost technologies, compared with previous results using complicated process. The comparative analysis is carried out to find the optimized inductor shape for the maximum performance by varying the thickness of metal and number of turns with rectangular shape.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.34-42
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• 2000

Recently, there is a growing need to develope small-size RF chip inductors operating to GHz to realize high-performance, micro-fabricated wireless communication products. For the development of high-performance RF chip inductors, however, the ferrite-based chip inductors can not be used above 300MHz due to the limitation of the permeability of this material. In this work, small-size, high-performance RF chip inductors utilizing amorphous $Al_2O_3$ core material were investigated. Copper (Cu) with 40${\mu}m$ diameter was used as the coils and the chip inductor size fabricated in this work is $2.1mm{\times}1.5mm{\times}1.0mm$. The external current source was applied after bonding Cu coil leads to gold pads electro-plated on the bottom edges of a core material. The composition of core materials was measured using a EDX. High frequency characteristics of the inductance (L), quality factor (Q), and impedance (Z) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). The developed inductors have the self-resonant frequency (SRF) of 1 to 3.5 GHz and exhibit L of 22 to 150 nH. The L of the inductors decreases with increasing the SRF. The Z of the inductors has the maximum value at the SRF and the inductors have the quality factor of 70 to 97 in the frequency range of 500 MHz to 1.5 GHz.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.785-788
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• 2005

In this study, micro-scale, high-performance, solenoid-type RF chip inductors were investigated. The size of the RF chip inductors fabricated in this work was $1.0{\times}0.5{\times}0.5mm^3$ The material and shape of the core were 96% $Al_2O_3$ and I-type. The material and number of turn of coil were copper (Cu) and 6. The diameter ($40{\mu}m$) of coil and length (0.35mm) of solenoid were determined by a Maxwell three-dimensional field simulator to maximize the performance of the inductors. High frequency characteristics of the inductance (L) and quality-factor (Q) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). The inductors developed have inductances of 10.8nH and quality factors of 25.2 at 250MHz, and show results comparable to those measured for the inductors prepared by CoilCraftTm that is one of the best chip inductor company in the world. The simulated data predicted the high-frequency data of the Land Q of the inductors developed well.

• Journal of Advanced Navigation Technology
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• v.14 no.2
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• pp.176-182
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• 2010

This paper proposes that an inverse class-E amplifier is used a tunable parallel resonator at output port in order to maintain a high power-added efficiency(PAE) and output power with wide frequency ranges. A tunable circuit has a constant Q factor at operating frequency ranges and because of using varactor diode, the inductor and capacitor values of resonator can be changed. Also, the inductance value for zero-current switching (ZCS) is implemented a lumped element and the capacitance value is made a distributed element for phase compensation. The inverse class E amplifier using tunable parallel resonator is obtained to deliver 25dBm output power and achieve maximum power added efficiency(PAE) of 75% at 65-120MHz frequency ranges.

• International journal of advanced smart convergence
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• v.9 no.1
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• pp.172-176
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• 2020

The implementation of a low phase noise voltage controlled oscillator (VCO) is important for the signal integrity of wireless communication terminal. A low phase noise wideband VCO for a wireless local area network (WLAN) application is presented in this paper. A 6-bit coarse tune capacitor bank (capbank) and a fine tune varactor are used in the VCO to cover the target band. The simulated oscillation frequency tuning range is from 8.6 to 11.6 GHz. The proposed VCO is desgned using 65 nm CMOS technology with a high quality (Q) factor bondwire inductor. The VCO is biased with 1.8 V VDD and shows 9.7 mA current consumption. The VCO exhibits a phase noise of -122.77 and -111.14 dBc/Hz at 1 MHz offset from 8.6 and 11.6 GHz carrier frequency, respectively. The calculated figure of merit(FOM) is -189 dBC/Hz at 1 MHz offset from 8.6 GHz carrier. The simulated results show that the proposed VCO performance satisfies the required specification of WLAN standard.