• Journal of Conservation Science
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• v.33 no.3
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• pp.215-223
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• 2017

The purpose of this study is to reveal the characteristics, correlations, and colorant materials of those using the chemical compositions of 30 glasses excavated from the Sarari hall of the Mireuksaji stone pagoda, and to determine the correlations between them and other glass excavated from the Wanggungri site. The results of the chemical analysis of the 11 glass beads show that they are a soda glass group with high contents of $SiO_2$ and $Na_2O$; these can be further subdivided into soda-alumina groups ($Na_2O-Al_2O_3-CaO-Si_2O$). The characteristics of the stabilizer are classified as being of the high alumina glass group (LCHA), except for two glasses. It was concluded that colorant materials affected the coloring for glass beads by various components including Ti, Mn, Fe, Cu and Pb. In addition, we examined six lead glasses which are glass plate and unknown fragments that are of a common lead glass system ($PbO-SiO_2$) with respect to the average contents of PbO (70wt.%) and $SiO_2$ (30wt.%). As a result of comparing these relics with those of the glass beads excavated by Wanggungri, there is a similarity in that they belong to the soda glass group. However, the contents of $Na_2O$ are relatively higher than that of the glass beads in the Mireuksaji pagoda, and most of relics include glasses with a low content of $K_2O$ and CaO. In addition, the PbO and $SiO_2$ contents are slightly different in the lead glass. It seems that the glass relics made at two different sites may have used different raw materials or techniques.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.374-377
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• 2009

The characteristics of the deposited thin films of the zinc oxide (ZnO) at different oxygen pressures will be elucidated in this work. The resistivity of ZnO thin films were dominated by the carrier concentration under high oxygen pressure conditions while controlled by the carrier mobility at low oxygen ambiences. In addition, we will show the characteristics of the transparent ZnO based thin film transistor (TFT) fabricated at a full room temperature process with gate dielectric of gadolinium oxide ($Gd_2O_3$) thin films.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.373-373
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• 2014

Resistive-change random access memory (ReRAM) device is one of the promising candidates owing to its simple structure, high scalability potential and low power operation. Many resistive switching devices using transition metal oxides materials such as NiO, Al2O3, ZnO, HfO2, $TiO_2$, have attracting increased attention in recent years as the next-generation nonvolatile memory. Among various transition metal oxides materials, HfO2 has been adopted as the gate dielectric in advanced Si devices. For this reason, it is advantageous to develop an HfO2-based ReRAM devices to leverage its compatibility with Si. However, the annealing temperature of these high-k thin films for a suitable resistive memory switching is high, so there are several reports for low temperature process including microwave irradiation. In this paper, we demonstrate the bipolar resistive switching characteristics in the microwave irradiation annealing processed Ag/HfO2/Pt ReRAM device. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity of resistance values and operating voltage were obtained from the micro wave annealing processed HfO2 ReRAM device. In addition, a stable DC endurance (>100 cycles) and a high data retention (>104 sec) were achieved.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.4
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• pp.558-563
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• 1996

Fracture strength of $Si_{3}N_{4}/20$ vol% SiC nanocomposites with fifferent sintering additives was measured. Strength of nanocomposites with 6 wt% $Y_{2}O_{3}$ and 2 wt% $Al_{2}O_{3}$ as sintering additives was higher at room temperature but significant strength degradation at elevated temperature was occured due to the softening of grain boundary phase. Fracture strength of 8 wt% $Y_{2}O_{3}$ doped sample was higher than that of $Al_{2}O_{3}$ added sample at $1400^{\circ}C$. The retention of high temperature strength in 8 wt% $Y_{2}O_{3}$ doped sample can be attributed to high softening temperature and crystallization of grain boundary glassy phase.

• Transactions of the Korean hydrogen and new energy society
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• v.28 no.4
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• pp.419-425
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• 2017

In this study, an efficient dye-sensitive solar cells (DSSC) was developed after post-treatment of ZnO on $TiO_2$ photoelectrode. The $TiO_2$ electrode with ZnO post treatment was prepared with Titanium isoporopoxide in Zinc Nitrate Hexahydrate aqueous solution by incineration for 30 min at $450^{\circ}C$. The ZnO-post treated $TiO_2$ electrode showed strong dispersion force between particles in relation to the control $TiO_2$, referring high specific surface area and dye-adsorption rate. Proper addition of ZnO enhanced electron mobility and reduced internal resistance and electron recombination. Light conversion efficiency of DSSCs containing the ZnO-posttreated $TiO_2$ electrode increased 35.4% when compared to the DSSCs using $TiO_2$ electrode. It is similar to the DSSCs with $TiCl_4$ post treatment $TiO_2$ electrode. Increasing of light conversion efficiency was due to high specific surface area and dispersion force, and low dye-adsorption rate and electron recombination. Taken together, ZnO may be used as posttreatment of photoelectrode and replaced $TiCl_4$ that has high toxicity and causticity.

• Transactions on Electrical and Electronic Materials
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• v.11 no.6
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• pp.261-265
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• 2010

In this paper, we attempt to improve the electrical characteristics of epoxy resin at high temperature (above $80^{\circ}C$) by adding magnesium oxide (MgO), which has high thermal conductivity. Scanning electron microscopy (SEM) of the dispersion of specimens with added MgO reveals that they are evenly dispersed without concentration. The dielectric breakdown characteristics of $SiO_2$ and MgO nanocomposites are tested by measurements at different temperatures to investigate the filler's effect on the dielectric breakdown characteristics. The dielectric breakdown strength of specimens with added $SiO_2$ decreases slowly below $80^{\circ}C$ (low temperature) but decreases rapidly above $80^{\circ}C$ (high temperature). However, the gradient of the dielectric breakdown strength of specimens with added MgO is slow at both low and high temperatures. The dielectric breakdown strength of specimens with 0.4 wt% $SiO_2$ is the best among the specimens with added $SiO_2$, and that of specimens with 3.0 wt% and 5.0 wt% MgO is the best among those with added MgO. Moreover, the dielectric strength of specimens with 3.0 wt% MgO at high temperatures is approximately 53.3% higher than that of specimens with added $SiO_2$ at $100^{\circ}C$, and that of specimens with 5.0 wt% of MgO is approximately 59.34% higher under the same conditions. The dielectric strength of MgO is believed to be superior to that of $SiO_2$ owing to enhanced thermal radiation because the thermal conductivity rate of MgO (approximately 42 $W/m{\cdot}K$) is approximately 32 times higher than that of $SiO_2$ (approximately 1.3 $W/m{\cdot}K$). We also confirmed that the allowable breakdown strength of specimens with added MgO at $100^{\circ}C$ is within the error range when the breakdown probability of all specimens is 40%. A breakdown probability of up to 40% represents a stable dielectric strength in machinery and apparatus design.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.406-411
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• 2002

Ni-Zn ferrite is required to have predominant and stable characteristics in the range of high frequency for the power line communication, so that microstructures and magnetic properties such as power loss and initial permeability in $Ni_{0.8}Zn_{0.2}Fe_2O_4$ were investigated in terms of variable $Bi_2O_3,CaO$ and $V_2O_5$ contents. $Bi_2O_3$ and $V_2O_5$ liquid phase created during sintering process promoted sintering and grain growth but much of the closed pore existed in the grains. The grain size of the specimens with $V_2O_5$ of over 0.5 wt% decreased as the result of "pinning effect"and the resonance frequency increased with CaO of 0.3we%. The high initial permeability of 81.52%, resonance frequency of 17.05 MHz and low power loss of 17,858 kW/$\textrm{m}^3$ were obtained from the samples with $Bi_2O_3$ of 0.5, CaO of 0.3, and $V_2O_5$ of 0.7 wt%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.17-21
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• 2001

We proposed that concentrations of cartier electron as well as ionized donor defects in nonstoichiometric ZnO are proportional to $P^{-1/2}_{O_2}$, whenever they ionizes singly or doubly, by employing the Fermi-Dirac (FD) statistics for ionization of the native thermal defects $Zn_i$ and $V_o$. The effect of acceptor defect, zinc vacancy $V_{Zn}$made by the Frenkel and Schottky disorder reactions, on carrier concentrations was discussed. By application of the FD statistics law to their ionization while the formation of defects is assumed governed by the mass-action law, the calculation results indicate; 1. ZnO shows n-type conductivity with $N_D>$N_A$ and majority concentration of $n{\propto}\;P^{-1/2}_{O_2}$ in a range of $P_{O_2}$, lower than a critical value. 2. As the concentration of acceptor $V_{Zn}$ increases proportional to $P^{1/2}_{O_{2}}$, ZnO made at extremely high $P_{O_{2}}$, can have p-type conductivity with majority concentration of p ${\propto}\;P^{-1/2}_{O_{2}}$. One may not, however, obtain p-type ZnO if the pressure for $N_{D}<$N_{A}$ is too high.

• Bulletin of the Korean Chemical Society
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• v.32 no.10
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• pp.3571-3574
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• 2011

Nano-scaled metal oxides have been attractive materials for sensors, photocatalysis, and dye-sensitization for solar cells. We report the controlled synthesis and characterization of single crystalline $TiO_2$ nanowires via a catalyst-assisted vapor-liquid-solid (VLS) and vapor-solid (VS) growth mechanism during TiO powder evaporation. Scanning electron microscope (SEM) and transmission electron microscope (TEM) studies show that as grown $TiO_2$ materials are one-dimensional (1D) nano-structures with a single crystalline rutile phase. Also, energy-dispersive X-ray (EDX) spectroscopy indicates the presence of both Ti and O with a Ti/O atomic ratio of 1 to 2. Various morphologies of single crystalline $TiO_2$ nano-structures are realized by controlling the growth temperature and flow rate of carrier gas. Large amount of reactant evaporated at high temperature and high flow rate is crucial to the morphology change of $TiO_2$ nanowire.

• Korean Journal of Materials Research
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• v.20 no.7
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• pp.370-373
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• 2010

In fabricating plasma display panels, the photolithographic process is used to form patterns of barrier ribs with high accuracy and high aspect ratio. It is important in the photolithographic process to control the refractive index of the photosensitive paste. The composition of this paste for photolithography is based on the $B_2O_3-SiO_2-Al_2O_3$ glass system, including additives of alkali oxides and rare earth oxides. In this work, we investigated the density, structure and refractive index of glasses based on the $B_2O_3-SiO_2-Al_2O_3$ system with the addition of $Li_2O$, $K_2O$, $Na_2O$, CaO, SrO, and MgO. The refractive index of the glasses containing K2O, Na2O and CaO was similar to that of the [BO3] fraction while that of the SrO, MgO and Li2O containing glasses were not correlated with the coordination fraction. The coordination number of the boron atoms was measured by MAS NMR. The refractive index increased with a decrease of molar volume due to the increase in the number of non-bridging oxygen atoms and the polarizability. The lowest refractive index (1.485) in this study was that of the $B_2O_3-SiO_2-Al_2O_3-K_2O$ glass system due to the larger ionic radius of $K^+$. Based on our results, it has been determined that the refractive index of the $B_2O_3-SiO_2-Al_2O_3$ system should be controlled by the addition of alkali oxides and alkali earth oxides for proper formation of the photosensitive paste.