• Journal of Advanced Marine Engineering and Technology
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• 제31권6호
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• pp.777-783
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• 2007

In this work, a highly integrated downconverter MMIC employing HBT(heterojunction bipolar transistor) was developed for application to one chip tranceiver solution of Ku-band commercial wireless communication system. The downconverter MMIC (monolithic microwave integrated circuit) includes mixer filter. amplifier and input/output matching circuit. Especially, spiral inductor structures employing SiN film were used for a suppression of LO and its second harmonic leakage signals. Concretely, they were properly designed so that the self-resonance frequency was accurately tuned to LO and its second harmonic frequency, and they were integrated on the downconverter MMIC.

• 전자공학회논문지D
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• 제34D권7호
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• pp.15-22
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• 1997

A 10Gbit/s limiting amplifier IC for optical transmission system was implemented with AlGaAs HBT (heterojunction bipolar transistor) technology. HBTs with 2x10.mu. $m^{2}$ and 6x20.mu. $m^{2}$ emitter size were used. The HBT structures are based on metal-organic chemical vapor deposition (MOCVD) epitxy and employ a mesa structure with self-aligned emitter/base and sidewall dielectric passivation. IC was designed to support differnetial input and output. Small signal performance of the packaged IC showed 26dB gain and $f_{3dB}$ of 8GHz. A single ouput has 800m $V_{p-p}$ swing with more than 26dB dynamic range. The performance of the limiting amplifier was verified through single mode fiber320km transmission link test.est.

• ETRI Journal
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• 제28권3호
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• pp.386-388
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• 2006

Monolithic SiGe heterojunction bipolar transistor (HBT) variable gain amplifiers (VGAs) with a feedforward configuration have been newly developed for 5 GHz applications. Two types of the feedforward VGAs have been made: one using a coupled-emitter resistor and the other using an HBT-based current source. At 5.2 GHz, both of the VGAs achieve a dynamic gain-control range of 23 dB with a control-voltage range from 0.4 to 2.6 V. The gain-tuning sensitivity is 90 mV/dB. At $V_{CTRL}$= 2.4 V, the 1 dB compression output power, $P_{1-dB}$, and dc bias current are 0 dBm and 59 mA in a VGA with an emitter resistor and -1.8 dBm and 71mA in a VGA with a constant current source, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.158-162
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• 1995

We report rf and power characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistor (HBTs) for X-band power applications. HBTs have been fabricated with polyimide a an interlayer dielectric. By characterizing the DC and RF characteristics we obtained the maximum current gain of 45, BV$\_$CEO/ of 10 V, fT of 30 GHz and f$\_$max/ of 17 GHz for device with 6x14$\mu\textrm{m}$$^2$emitter size. To extract accurate equivalent parameters, the De-embedded method was applied for extraction of parasitic parameters and the calculation of circuit equations for intrinsic parameters. Based on the Load-pull method, power characteristics was simulated and measured to get the maximum output power of the device.

• Nuclear Engineering and Technology
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• 제55권11호
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• pp.4238-4245
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• 2023

In order to predict the lifetime of InP Heterojunction Bipolar Transistor (HBT) devices and related circuits in the space radiation environment, a novel model including gamma radiation effects is proposed in this paper. Based on the analysis of radiation-induced device degradation effects including both DC and AC characteristics, a set of empirical expressions describing the device degradation trend are presented and incorporated into the Keysight model. To validate the effective of the proposed model, a series of radiation experiments are performed. The correctness of the novel model is validated by comparing experimental and simulated results before and after radiation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.366-370
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• 2002

GaAs has become a very popular material for the fabrication of high frequency, low noise and microwave power devices. GaAs devices are also well suited for high temperature operation because of the large band gap of this material. The standard GaAs technology and device structures have to be modified for stable operation at high temperature. In this paper, AlGaAs/GaAs HBT considering stable ohmic contact at high temperature as well as thermal effect such as self-heating effect are introduced. All the data obtained study will be used as input data for the simulator and the result will be compared with an analytical model available in this study,

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.84-85
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• 2008

In this paper, differential cross coupled LC VCOs with two noise frequency filtering techniques are proposed. Both VCOs are based on symmetric capacitor with asymmetric inductor tank structure. The VCO using low pass filtering technique shows low phase noise of -130.40 dBc/Hz at 1 MHz offset when the center frequency is 1.619 GHz. And the other VCO using band pass filtering technique shows -127.93 dBc/Hz at 1 MHz offset frequency when center frequency is 1.604 GHz. Two noise frequency filtering techniques are approached with different target.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 학술대회지
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• pp.883-884
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• 2004

High-speed IC for time-division multiplexing (TDM) optical transmission systems have been designed and fabricated by using InP heterojunction-bipolar-transistor (HBT) technology. The driver IC was developed for driving external modulators, featuring differential outputs and the operation speed up to 10 Gbps with an output voltage swing of 1.3 Vpp at each output which was the limit of the measurement. Because -3 dB frequency was 20GHz, this circuit will be operated up to 20Gbps. 1.3Vpp differential output was achieved by switching 50 mA into a 50 $\Omega$ load. The power dissipation of the driver IC was 1W using a single supply voltage of -3.5Y. Input md output return loss of the IC were better than 10 dB and 15 dB, respectively, from DC to 20GHz. The chip size of fabricated IC was $1.7{\Box}1.2 mm^{2}$.

• 한국인터넷방송통신학회논문지
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• 제19권3호
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• pp.135-140
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• 2019

본 논문에서는 L, S 및 C 대역에서 동작하는 주파수 분배 방식의 광대역 구동증폭기를 설계 및 제작하였다. 구동증폭기의 비대역폭이 100% 이상인 경우에는 트랜지스터를 효율적으로 이용하기 어려우며, 특히 주파수 대역에 따라 출력 전력 및 효율의 특성이 민감하게 변하는 전력증폭기를 동작시키기 위해서는 구동증폭기의 특성이 중요하게 작용한다. 본 논문에서는 구동증폭기의 대역폭을 최대화하고, 구동증폭기의 뒤쪽에 위치 할 전력증폭기의 트랜지스터를 효율적으로 이용 할 수 있도록 구동증폭기의 출력을 저대역과 고대역으로 나누어주는 주파수 분배 방식을 적용하였다. 설계된 회로는 GaAs HBT (Heterojunction Bipolar Transistor) 공정 및 9-layer의 SiP (System in Package)를 이용하여 제작하였고, 측정을 통해 성능을 검증하였다. 제작된 회로는 동작 주파수 범위에서 8 dB이상의 이득과 15 dBm이상의 출력전력을 보여주었다.

• 전자공학회논문지C
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• 제36C권4호
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• pp.45-53
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• 1999

10Gbit/s 광수신기에 사용되는 전치증폭기, 리미팅증폭기, 그리고 판별회로 IC 등을 AlGaAs/GaAs HBT 기술을 이용하여 설계 제작하였다. 사용한 HBT는 차단주파수 55GHz, 최대 공진 주파수 45GHz 의 특성을 지닌다. 제작된 전치증폭기 와 PIN 광검출기를 이용해 광수신기 front-end를 구성하였는데, 측정된 이득은 46dBΩ, 3dB 대역폭은 12.3GHz 의 특성을 보였다. 리미팅증폭기는 소신호 이득 27dB, 3dB 대역폭 10.6GHz 특성을 보였으며, 입력 신호 전압 20mVp-p 이상에서 리미팅 동작이 이루어져 900mVp-p 신호를 출력하였다. 판별회로는 10Gbit/s에서 위상마진 300°, 입력 전압 수신감도 47mVp-p의 특성을 보였다.