• 제목/요약/키워드: heterojunction bipolar transistor (HBT)

검색결과 27건 처리시간 0.029초

이종접합 쌍극성 트랜지스터의 Ebers-Moll 모델 (An Ebers-Moll Model for Heterojunction Bipolar Transistor's)

  • 박광민;곽계달
    • 전자공학회논문지A
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    • 제30A권3호
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    • pp.88-94
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    • 1993
  • In this paper, a simple Ebers-Moll Model for the heterojunction bipolar transistor is presented. Using the model structure for the npn type HBT, the current-voltage characteristics was analyzed. And from the obtained terminal currents, the Ebers-Moll equations were derived. Then substituting the physical parameters for heterojunction to those for homojunction, this model would be used to analyze the characteristics of single and/or duble heterojunction HBT's. And directly relating model parameters to device parameters, it would be also used to optimize the characteristics of HBT's. The simulated results using this model were in good agreement with experimental data.

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SiGe Heterojunction Bipolar Transistor의 등가모델 파라미터 추출 (Equivalent Model Parameter Extraction of SiGe Heterojunction Bipolar Transistor)

  • 이성현
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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    • pp.49-52
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    • 2002
  • A new method is developed to extract model parameters of SiGe HBT equivalent circuit including the base impedance and base-collector junction capacitance. Using this method, all resistances and capacitances of SiGe HBT are independently determined from measured S-parameters using two-port parameter formula. This method is proposed to reduce possible errors generated from global optimization process, and its accuracy has been verified by finding good agreements between measured and modeled current / power gain up to 18 GHz.

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Fabrication and Characteristics of an InP Single HBT and Waveguide PD on Double Stacked Layers for an OEMMIC

  • Kim, Hong-Seung;Kim, Hye-Jin;Hong, Sun-Eui;Jung, Dong-Yun;Nam, Eun-Soo
    • ETRI Journal
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    • 제26권1호
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    • pp.61-64
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    • 2004
  • We have explored the fabrication of an InP/InGaAs single heterojunction bipolar transistor (HBT) and a wave guide p-i-n photodiode (PD) on two kinds of double stacked layers for the implementation of an optoelectronic millimeter-wave monolithic integrated circuit (OEMMIC). We applied a photosensitive polyimide for passivation and integration to overcome the large difference between the HBT and PD layers of around $3{\mu}m$. Our experiment showed that the RF characteristics of the HBT were dependent on the location of the PD layer, while the dc performances of the HBTs and PDs were independent of the type of stacked layer used. The $F_t$ and $F_{max}$ of the HBTs on the HBT/PD stacked layer were 10% lower than those of the HBTs on the PD/HBT stacked layer.

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접합구조에 따른 AIGaAs/GaAs HBT의 전기적 특성에 관한 연구 (Electrical Characteristics of AIGaAs/GaAs HBTs with different Emitter/Base junction structures)

  • 김광식;안형근;한득영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.63-66
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    • 2000
  • In this paper, we present the simulation of the heterojunction bipolar transistor with different Emitter-Base junction structures. Our simulation results include effect of setback and graded layer. We prove the emitter efficiency's improvement through setback and graded layer. In 1995, the analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer was derived. But setback layer and linearly graded layer's recombination current was considered numerically. Later, recombination current model included setback layer and graded layer will be proposed. New recombination current model also wile include abrupt heterojunction's recombination current model. In this paper, the material parameters of the heterojunction bipolar transistor with different Emitter-Base junction structures is introduced.

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Simulation of the light emission from quantum-well based heterojunction bipolar transistors

  • 박영규;박문호;김광웅;박정호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.52-52
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    • 2009
  • In this work, we demonstrate the modelling and simulation of the AlGaAs/GaAs quantum-well based light emitting transistor(LET). Based on the experimental and theoretical model, we have compared between a heterojunction bipolar transistor(HBT) structure with quantum wells in the base region and a HBT without quantum wells in the base region. For the purpose of optimizing device design, several analytic and numerical studies have been presented.

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고주파수용 SiGe HBT의 베이스 프로파일 시뮬레이션에 관한 연구 (Base Profile Simulation of SiGe Heterojunction Bipolar Transistor for High Frequency Applications)

  • 이우희;이준하;박병수;이홍주
    • 한국산학기술학회:학술대회논문집
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    • 한국산학기술학회 2004년도 춘계학술대회
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    • pp.172-175
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    • 2004
  • This paper analyzes the effects of Ge profiles shape of SiGe heterojunction bipolar transistors (HBT's) for high frequency application. Device simulations using ATLAS/BLAZE for the SiGe HBT with trapezoidal or triangular Ge profile are carried out to optimize the device performance. An HBT with $15\%$ triangular Ge profile shows higher cut-off frequency and DC current gain than that with $19\%$ trapezoidal Ge profile. The cut-off frequency and DC gain are increased from 42GHz to 84GHz and from 200 to 600, respectively. The SiGe HBT has been fabricated using a production CVD reactor.

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GaAs/InGaP HBT 소신호 등가회로 모델 파라미터의 새로운 추출방법 (A New Extraction Method of GaAs/InGaP HBT Small-signal Equivalent Circuit Model Parameters)

  • 이명규;윤경식
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2000년도 추계종합학술대회 논문집(1)
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    • pp.357-360
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    • 2000
  • This paper describes a parameter extraction method for HBT(Heterojunction Bipolar Transistor) equivalent circuit model without measurements of special test structures or numerical optimizations. Instead, all equivalent circuit parameters are calculated analytically from small-signal S-parameters measured under different bias conditions. These values being extracted from the cutoff mode can be used to extract intrinsic parameters at the active mode. This method yields a deviation of about 1.3 % between the measured and modeled S-parameters.

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An X-Band Carbon-Doped InGaP/GaAs Heterojunction Bipolar Transistor MMIC Oscillator

  • Kim, Young-Gi;Kim, Chang-Woo;Kim, Seong-Il;Min, Byoung-Gue;Lee, Jong-Min;Lee, Kyung-Ho
    • ETRI Journal
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    • 제27권1호
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    • pp.75-80
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    • 2005
  • This paper addresses a fully-integrated low phase noise X-band oscillator fabricated using a carbon-doped InGaP heterojunction bipolar transistor (HBT) GaAs process with a cutoff frequency of 53.2 GHz and maximum oscillation frequency of 70 GHz. The oscillator circuit consists of a negative resistance generating circuit with a base inductor, a resonating emitter circuit with a microstrip line, and a buffering resistive collector circuit with a tuning diode. The oscillator exhibits 4.33 dBm output power and achieves -127.8 dBc/Hz phase noise at 100 kHz away from a 10.39 GHz oscillating frequency, which benchmarks the lowest reported phase noise achieved for a monolithic X-band oscillator. The oscillator draws a 36 mA current from a 6.19 V supply with 47.1 MHz of frequency tuning range using a 4 V change. It occupies a $0.8mm{\times}0.8mm$ die area.

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High-Isolation SPDT RF Switch Using Inductive Switching and Leakage Signal Cancellation

  • Ha, Byeong Wan;Cho, Choon Sik
    • Journal of electromagnetic engineering and science
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    • 제14권4호
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    • pp.411-414
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    • 2014
  • A switch is one of the most useful circuits for controlling the path of signal transmission. It can be added to digital circuits to create a kind of gate-level device and it can also save information into memory. In RF subsystems, a switch is used in a different way than its general role in digital circuits. The most important characteristic to consider when designing an RF switch is keeping the isolation as high as possible while also keeping insertion loss as low as possible. For high isolation, we propose leakage signal cancellation and inductive switching for designing a singlepole double-throw (SPDT) RF switch. By using the proposed method, an isolation level of more than 23 dB can be achieved. Furthermore, the heterojunction bipolar transistor (HBT) process is used in the RF switch design to keep the insertion loss low. It is demonstrated that the proposed RF switch has an insertion loss of less than 2 dB. The RF switch operates from 1 to 8 GHz based on the $0.18-{\mu}m$ SiGe HBT process, taking up an area of $0.3mm^2$.

등방성 언더컷 식각에 의한 에어-브리지 소자 격리 구조를 갖는 AaGaAs/GaAs HBT의 제작에 관한 연구 (A study of the fabrication of AlGaAs/GaAs HBT with an air-bridge isolation structure induced by isotropic undercut etching)

  • 김연태;이제희;윤상호;권오섭;반용찬;원태영
    • 전자공학회논문지D
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    • 제35D권5호
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    • pp.40-47
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    • 1998
  • This paper report sthe design, fabrication and characterization of an AlGaAs/GaAs HBT (heterojunction bipolar transistor) with an air-bridge isolation structure which is made to improve high frequency characteristics for the application to the mobile communication system in the next genration. We found that the size, shape and structure of HBT have an effect on the high frequency operation. The measured dc and ac characteristics of the four type HBTs were compared and analyzed. An E-type HBT with an air-bridge structure by undercut etching exhibited .beta.=56, $V_{off-set}$ = 0.3 V, B $V_{CEO}$=7.0V with $f_{T}$=40 GHz and $f_{max}$=45GHz at a collector current density of 7.1*10$^{4}$ A/c $m^{2}$.>.

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