• 제목/요약/키워드: heterojunction

검색결과 445건 처리시간 0.032초

Facile in situ Formation of CuO/ZnO p-n Heterojunction for Improved H2S-sensing Applications

  • Shanmugasundaram, Arunkumar;Kim, Dong-Su;Hou, Tian Feng;Lee, Dong Weon
    • 센서학회지
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    • 제29권3호
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    • pp.156-161
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    • 2020
  • In this study, hierarchical mesoporous CuO spheres, ZnO flowers, and heterojunction CuO/ZnO nanostructures were fabricated via a facile hydrothermal method. The as-prepared materials were characterized in detail using various analytical methods such as powder X-ray diffraction, micro Raman spectroscopy, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, and transmission electron microscopy. The obtained results are consistent with each other. The H2S-sensing characteristics of the sensors fabricated based on the CuO spheres, ZnO flowers, and CuO/ZnO heterojunction were investigated at different temperatures and gas concentrations. The sensor based on ZnO flowers showed a maximum response of ~141 at 225 ℃. The sensor based on CuO spheres exhibited a maximum response of 218 at 175 ℃, whereas the sensor based on the CuO/ZnO nano-heterostructure composite showed a maximum response of 344 at 150 ℃. The detection limit (DL) of the sensor based on the CuO/ZnO heterojunction was ~120 ppb at 150 ℃. The CuO/ZnO sensor showed the maximum response to H2S compared with other interfering gases such as ethanol, methanol, and CO, indicating its high selectivity.

후열처리 분위기에 따른 깊은 준위결함의 변화가 Ga2O3/SiC 이종접합 다이오드에 미치는 영향 분석 (Effects of Deep Level Defect Variations on Ga2O3/SiC Heterojunction Diodes Due to Post-Annealing Atmosphere)

  • 정승환;신명철;;구상모
    • 전기전자학회논문지
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    • 제28권1호
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    • pp.104-109
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    • 2024
  • 본 연구에서는 다양한 가스 분위기에서 후열처리를 진행한 후 Ga2O3/SiC 이종접합 다이오드의 깊은 준위 결함 변화를 Deep Level Transient Spectroscopy(DLTS) 기법으로 분석하여 깊은 준위 결함의 변화가 Ga2O3/SiC 이종접합 소자의 전기적 특성에 미치는 영향을 조사하였다. 또한, J-V 측정 및 Hall 측정을 통한 전기적 특성 분석을 실시하였고, N2 분위기에서 열처리된 소자에서 3.06 × 10-2 A/cm2로 가장 높은 on-state current가 측정되었으며, carrier concentration은 3.8 × 1014 cm-3로 증가하는 것이 관측되었다. 이는 후열처리 분위기에 따른 깊은 준위 결함의 변화가 전기적 특성에 영향을 미칠 수 있음을 시사한다.

Optoelectric properties of gate-tunable n-MoS2/n-WSe2 heterojunction with proper electrode metals

  • 이섬균;박민지;유경화
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.332.2-332.2
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    • 2016
  • Two dimensional transition-metal dichalcogenides (TMDs) semiconductors are attractive materials for optoelectric devices because of their direct energy bandgap and transparency. To investigate the feasibility of transparent p-n junctions, we have fabricated a p-n heterojunction consisting of p-type WSe2 and n-type MoS2 flakes since WSe2 and MoS2 with proper electrode metals exhibit p-type and n-type behaviors, respectively. These heterojunctions exhibits gate-tunable rectifying behaviors and photovoltaic effects (ECE ~ 0.2%) indicating that p-n junctions were formed. In addition, photocurrent and photovoltaic effects were observed under light illumination, which were dependent on the gate voltage. In addition, the photocurrent mapping images indicate that the photovoltaic effects comes from the junction area. Possible origins of gate-tunability are discussed.

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Lateral p-n junction Diode with organic single crystal by direct printing

  • Park, Yoon kyoung;Sung, Myung Mo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.144.1-144.1
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    • 2016
  • We fabricate organic single crystal nanowire heterojunction p-n diode poly(3-hexylthiophene)(P3HT) and from Phenyl-C61-butyric acid methyl ester(PCBM) using by liquid-bridge mediated nanotransfer molding(LB-nTM) method. LB-nTM has been reported an one step direct printing method for making well-aligned nanowire arrays. Moreover, multi-patterning nanostructures can be fabricated with the consecutive printing process. As a result, it is possible to make simple and basic concept of heterojunction devices such as lateral organic p-n nanojunction diode. P3HT/PCBM nanowires heterojunction diode has rectifying behavior with on/off ratios of ~20.

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Annealing 온도에 따른 bulk heterojunction 유기태양전지의 특성분석 (Analysis of Thermal Annealing Effect on the Power Conversion Efficiency of Heterojunction Organic Photovoltaics)

  • 김영훈;김민성;박성규;강정원;한정인
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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    • pp.177-178
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    • 2008
  • 열처리 조건이 이종접합 유기태양전제(heterojunction organic photovoltaics)의 power conversion efficiency(PCE)에 미치는 영향에 대해 살펴보았다. 본 연구에서는 열처리 온도와 열처리 시간을 변수로 다양한 조건하에서 유기태양전지를 제작하고 AM1.5G 조건에서의 효율 변화를 관찰하였다. 열처리 온도는 $90^{\circ}C$에서 $170^{\circ}C$까지 변화시키며 태양전지의 특성변주를 측정하였으며, 유리 기판 상에 제작된 태양전지의 경우에 $150^{\circ}C$의 열처리 온도에서 가장 우수한 효율을 나타내었다.

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Influence of Physical Load on the Stability of Organic Solar Cells with Polymer : Fullerene Bulk Heterojunction Nanolayers

  • Lee, Sooyong;Kim, Hwajeong;Kim, Youngkyoo
    • Current Photovoltaic Research
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    • 제4권2호
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    • pp.48-53
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    • 2016
  • We report the effect of physical load on the stability of organic solar cells under physical loads. The active layers in organic solar cells were fabricated with bulk heterojunction films (BHJ) films of poly (3-hexylthiophene) and phenyl-$C_{61}$-butyric methyl ester. The loading time was varied up to 60 s by keeping the physical load constant. Results showed that the open circuit voltage was not influenced by the physical load but other solar cell parameters were sensitive to the loading time. The fill factor was very slightly increased at 15 s, while short circuit current density was well kept for 30 s. The power conversion efficiency was reasonably maintained for 45 s but became significantly decreased by the continuous loading for 60 s.

MoOx 기반 실리콘 이종접합 고성능 광검출기 (MoOx/Si Heterojunction for High-Performing Photodetector)

  • 박왕희;김준동
    • 한국전기전자재료학회논문지
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    • 제29권11호
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    • pp.720-724
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    • 2016
  • Transparent n-type metal-oxide semiconductor of $MoO_x$ was applied on a p-type Si substrate for high-performing heterojunction photodetector. The formation of $MoO_x$ on Si spontaneously established a rectifying current flow with a high rectification ratio of 1,252.3%. Under light illumination condition, n-type $MoO_x$/p-type Si heterojunction device provided significantly fast responses (rise time : 61.28 ms, fall time : 66.26 ms). This transparent metal-oxide layer ($MoO_x$) would provide a functional route for various photoelectric devices, including photodetectors and solar cells.

MBE법으로 제작한 ZnSe/GaAs 이종접합 태양전지에 관한 연구 (A Study on ZnSe/GaAs Heterojunction Solar Cells Grown by MBE)

  • 이홍찬;이상태;오진석;김윤식;장지호
    • 한국마린엔지니어링학회:학술대회논문집
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    • 한국마린엔지니어링학회 2006년도 전기학술대회논문집
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    • pp.289-290
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    • 2006
  • We report a study of Zn(S)Se/GaAs heterojunction solar cells grown by molecular beam epitaxy (MBE). Zn(S)Se/GaAs heterostructures prepared under different conditions were characterized in-situ by reflection high-energy electron diffraction (RHEED). Structural and electrical properties were investigated with double crystal X-ray diffraction and current-voltage characteristics, respectively. The fabricated $n-ZnS_{0.07}Se_{0.93}/p-GaAs$ solar cell (SC #2) exhibited open circuit voltage($V_{oc}$) of 0.37 V, short circuit current($I_{sc}$) of $1.7{\times}10^{-2}$ mA, fill factor of 0.62 and conversion efficiency of 7.8 % under 38.5 $mW/cm^2$ illumination.

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The Interfacial Electronic Structure of Organic-organic Heterojunction: Effect of Molecular Orientation

  • 조상완
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.114.2-114.2
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    • 2014
  • The orientation of the constituent molecules in organic thin film devices can affect significantly their performance due to the highly anisotropic nature of ${\pi}$-conjugated molecules. We report here an angle dependent x-ray absorption study of the control of such molecular orientation using well-ordered interlayers for the case of a bilayer heterojunction of chloroaluminum phthalocyanine (ClAlPc) and C60. Furthermore, the orientation-dependent energy level alignment of the same bilayer heterojunction has been measured in detail using synchrotron radiation-excited photoelectron spectroscopy. Regardless of the orientation of the organic interlayer, we find that the subsequent ClAlPc tilt angle improves the ${\pi}-{\pi}$ interaction at the interface, thus leading to an improved short-circuit current in photovoltaic devices based on ClAlPc/C60. The use of the interlayers does not change the effective band gap at the ClAlPc/C60 heterointerface, resulting in no change in open-circuit voltage.

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TCO Workfunction Engineering with Oxygen Reactive Sputtering Method for Silicon Heterojunction Sola Cell Application

  • 봉성재;김선보;안시현;박형식;이준신
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.492-492
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    • 2014
  • On account of the good conductivity and optical properties, TCO is generally used in silicon heterojunction solar cell since the emitter material, hydrogenated amorphous silicon (a-Si:H), of the solar cell has low conductivity compare to the emitter of crystalline silicon solar cell. However, the work function mismatch between TCO layer and emitter leads to band-offset and interfere the injection of photo-generated carriers. In this study, work function engineering of TCO by oxygen reactive sputtering method was carried out to identify the trend of band-offset change. The open circuit voltage and short circuit current are noticeably changed by work function that effected from variation of oxygen ratio.

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