• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.129-133
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• 2001

In this paper, hermetic sealing was studied fur wafer level packaging of the MEMS devices. With the flip-chip bonding method, this B-stage epoxy sealing will be profit to MEMS device sealing and further more RF-MEMS device sealing. B-stage epoxy can be cured 2-step and hermetic sealing can be obtained. After defining $500{\mu}{\textrm}{m}$-width seal-lines on the glass cap substrate by screen printing, it was pre-baked at $90^{\circ}C$ for about 30 minutes. It was then aligned and bonded with device substrate followed by post-baked at $175^{\circ}C$ for about 30 minutes. By using this 2-step baking characteristic, the width and the height of the seal-line were maintained during the sealing process. The height of the seal-line was controlled within $\pm0.6${\mu}{\textrm}{m}$ and the strength was measured to about 20MPa by pull test. The leak rate of the epoxy was about $10^7$ cc/sec from the leak test.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.7
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• pp.407-412
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• 2017

This paper introduces a biocompatible packaging system for implantable medical device having a hermetic sealing, such that a perfect physical and chemical isolation between electronic medical system and human body (including tissue, body fluids, etc.) is obtained. The hermetic packaging includes an electronic MEMS pressure sensor, power charging system, and bluetooth communication system to wirelessly measure variation of capacitance. The packaging was acquired by Quartz direct bonding and $CO_2$ laser welding, with a size of width $ 6cm{\times}length\;10cm{\times}lheight\;3cm$. Hermetic sealing of the packaged system was tested by changing the pressure in a hermetic chamber using a precision pressure controller, from atmospheric to 900 mmHg. We found that the packaged system retained the same count or capacitance values with sensor 1 - 25,500, sensor 2 - 26,000, and sensor 3 - 20,800, at atmospheric as well as 900 mmHg pressure for 5 hours. This result shows that the packaging method has perfect hermetic sealing in any environment of the human body pressure.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.3 s.36
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• pp.197-205
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• 2005

Development of the packaging is one of the critical issues for commercialization of the RF-MEMS devices. RF MEMS package should be designed to have small size, hermetic protection, good RF performance and high reliability. In addition, packaging should be conducted at sufficiently low temperature. In this paper, a low temperature hermetic wafer level packaging scheme for the RF-MEMS devices is presented. For hermetic sealing, Au-Sn eutectic bonding technology at the temperature below $300{\times}C$ is used. Au-Sn multilayer metallization with a square loop of $70{\mu}m$ in width is performed. The electrical feed-through is achieved by the vertical through-hole via filled with electroplated Cu. The size of the MEMS Package is $1mm\times1mm\times700{\mu}m$. By applying $O_2$ plasma ashing and fabrication process optimization, we can achieve the void-free structure within the bonding interface as well as via hole. The shear strength and hermeticity of the package satisfy the requirements of MIL-STD-883F. Any organic gases or contamination are not observed inside the package. The total insertion loss for the packaging is 0.075 dB at 2 GHz. Furthermore, the robustness of the package is demonstrated by observing no performance degradation and physical damage of the package after several reliability tests.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.4
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• pp.11-15
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• 2001

In this paper, hermetic sealing technology was studied for wafer level packaging of the RF-MEMS devices. With the flip-chip bonding method. this non-conductive B-stage epoxy sealing will be profit to the MEMS device sealing. It will be particularly profit to the RF-MEMS device sealing. B-stage epoxy can be cured by 2-step and hermetic sealing can be obtained. After defining 500 $\mu\textrm{m}$-width seal-lines on the glass cap substrate by screen printing, it was pre-baked at $90^{\circ}C$ for about 30 minutes. It was, then, aligned and bonded with device substrate followed by post-baked at $175^{\circ}C$ for about 30 minutes. By using this 2-step baking characteristic, the width and the height of the seal-line could be maintained during the sealing process. The height of the seal-line was controlled within $\pm$0.6 $\mu\textrm{m}$ in the 4 inches wafer and the bonding strength was measured to about 20MPa by pull test. The leak rate, that is sealing characteristic of the B-stage epoxy, was about $10^{-7}$ cc/sec from the leak test.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.195-198
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• 2002

현재의 광통신, 이동통신 및 디지털 시대에서는 보다 소형화되고, 대용량의 데이터 저장 및 다기능 소자에 대한 요구가 많아지고 있다. 이러한 전자 산업 환경에서 MEMS 소자는 여러 요구조건을 만족시킬 수 있는 특징을 갖추고 있으며 실제 소자의 제작에 있어서 MEMS 소자를 이용하여 여러 물리 및 화학 센서 및 Actuator 제작에 응용이 되어지고 있고 Optical switch, Gyroscope, 적외선 어레이 센서, 가속도 센서, 위치 센서 등 여러 분야에서 실용화가 진행되어지고 있다. MEMS 구조물의 packaging 방법에 있어서는 내부 MEMS 소자의 동작을 위한 외부 환경으로부터의 보호를 위하여 Hermetic sealing에 대한 요구를 만족시켜야 한다. 본 발표에서는 이와 같은 MEMS device의 진공 패키지를 구현함에 있어서 기판 내부에 수동소자를 실장할 수 있는 LTCC 기술을 이용하여 진공 패키징하는 방법에 대하여 소개한다. 본 기술을 이용하는 경우 기존의 Hermetic sealing 이외에 향후 적층 기판 내부에 수동소자를 내장시켜 배선 길이 및 노이즈 성분을 감소시켜 더욱 전기적 성능을 향상시킬 수 있는 장점이 있게된다. 본 논문에서는 LTCC 기판을 이용하여 패키징 시킨 후, 내부 진공도에 영향을 줄 수 있는 계면들에서의 시간에 따른 진공도 변화의 특성치를 측정하여 LTCC 기판의 Hermetic sealing 특성에 관하여 조사하였다.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.1
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• pp.31-38
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• 2003

In the current electronic technology atmosphere, MEMS (Microelectromechanical System) technology is regarded as one of promising device manufacturing technologies to realize market-demanding device properties. In the packaging of MEMS devices, the packaged structure must maintain hermeticity to protect the devices from a hostile atmosphere during their operations. For such MEMS device vacuum packaging, we introduce the LTCC (Low temperature Cofired Ceramic) packaging technology, in which embedded passive components such as resistors, capacitors and inductors can be realized inside the package. The technology has also the advantages of the shortened length of inner and surface traces, reduced signal delay time due to the multilayer structure and cost reduction by more simplified packaging processes owing to the realization of embedded passives which in turn enhances the electrical performance and increases the reliability of the packages. In this paper, the leakage rate of the LTCC package having several interfaces was measured and the possibility of LTCC technology application to MEMS devices vacuum packaging was investigated and it was verified that improved hermetic sealing can be achieved for various model structures having different types of interfaces (leak rate: stacked via; $4.1{\pm}1.11{\times}10^{-12}$/ Torrl/sec, LTCC/AgPd/solder/Cu-tube; $3.4{\pm}0.33{\times}10^{-12}$/ Torrl/sec). In real application of the LTCC technology, the technology can be successfully applied to the vacuum packaging of the Infrared Sensor Array and the images of light-up lamp through the sensor way in LTCC package structure was presented.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.14.2-14.2
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• 2007

• The monthly packaging world
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• s.201
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• pp.67-71
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• 2010

• Journal of the Semiconductor & Display Technology
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• v.5 no.2 s.15
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• pp.33-36
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• 2006

Many issues arose to use the Pb-free solder as adhesive materials in MEMS ICs and packaging. Then this study for easy and simple sealing method using adhesive materials was carried out to maintain hermetic characteristic in MEMS Package. In this study, Hermetic characteristic using negative PR (XP SU-8 3050 NO-2) as adhesive at the interface of Si test coupon/glass substrate and Si test coupon/LTCC substrate was examined. For experiment, the dispenser pressure was 4 MPa and the $200\;{\mu}m{\Phi}$ syringe nozzle was used. 3.0 mm/sec as speed of dispensing and 0.13 mm as the gap between Si test coupon and nozzle was selected to machine condition. 1 min at $65^{\circ}C$ and 15 min at $95^{\circ}C$ as Soft bake, $200\;mj/cm^2$ expose in 365 nm wavelength as UV expose, 1 min at $65^{\circ}C$ and 6 min at $95^{\circ}C$ as Post expose bake, 60 min at $150^{\circ}C$ as hard bake were selected to activation condition of negative PR. Hermetic sealing was achieved at the Si test coupon/ glass substrate and Si test coupon/LTCC substrate. The leak rate of Si test coupon/glass substrate was $5.9{\times}10^{-8}mbar-l/sec$, and there was no effect by adhesive method. The leak rate of Si test coupon/LTCC substrate was $4.9{\times}10^{-8}mbar-l/sec$, and there was no effect by dispensing cycle. Better leak rate value could be achieved to use modified substrate which prevent PR flow, to increase UV expose energy and to use system that controls gap automatically with vision.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.4
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• pp.435-442
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• 2004

This paper presents a hermetic MEMS on-chip package bonded by a closed-loop AuSn solder-line. We design three different package specimens, including a substrate heated specimen without interconnection-line (SHX), a substrate heated specimen with interconnection-line (SHI) and a locally heated specimen with interconnection-line (LHI). Pressurized helium leak test has been carried out for hermetic seal evaluation in addition to the critical pressure test for bonding strength measurement. Substrate heating method (SHX, SHI) requires the bonding time of 40min. at 400min, while local heating method (LHI) requires 4 min. at the heating power of 6.76W. In the hermetic seal test. SHX, SHI and LHI show the leak rates of 5.4$\pm$6.7${\times}$$^{-10}$ mbar-l/s, 13.5$\pm$9.8${\times}$$^{-10}$ mbar-l/s and 18.5$\pm$9.9${\times}$$^{-10}$ mbar-l/s, respectively, for an identical package chamber volume of 6.89$\pm$0.2${\times}$$^{-10}$. In the critical pressure test, no fracture is found in the bonded specimens up to the applied pressure of 1$\pm$0.1MPa, resulting in the minimum bonding strength of 3.53$\pm$0.07MPa. We find that the present on-chip packaging using a closed AuSn solder-line shows strong potential for hermetic MEMS packaging with interconnection-line due to the hermetic seal performance and the shorter bonding time for mass production.