• 한국표면공학회지
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• 제47권4호
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• pp.181-185
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• 2014

We investigated the structural, electrical and optical characteristics of IGZO thin films deposited by a room-temperature RF reactive magnetron sputtering. The thin films deposited were annealed for 2 hours at various temperatures of 300, 400, 500 and $600^{\circ}C$ and analyzed by using X-ray diffractometer, transmission electron microscopy, atomic force microscope and Hall effects measurement system. The films annealed at $600^{\circ}C$ were found to be crystallized and their surface roughness was decreased from 0.73 nm to 0.67 nm. According to XPS measurements, concentration of oxygen vacancies were decreased at $600^{\circ}C$. Optical band gap were increased to 3.31eV. The carrier concentration and Hall mobility were sharply increased at 600oC. Our results indicate that the IGZO films deposited at a room temperature can show better thin film properties through a heat treatment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.81-82
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• 2007

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C\;and\;420^{\circ}C$, respectively. After the as-grown single crystal $CdGa_2Se_4$ thin films were annealed in Cd-, Se-, and Ga -atmospheres, the origin of point defects of single crystal $CdGa_2Se_4$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd},\;V_{Se},\;Cd_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cd-atmosphere converted single crystal $CdGa_2Se_4$ thin films to an optical p-type. Also, we confirmed that Ga in $CdGa_2Se_4$/GaAs did not form the native defects because Ga in single crystal $CdGa_2Se_4$ thin films existed in the form of stable bonds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.129-130
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• 2006

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. After the as-grown $CdIn_2S_4$ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of $CdIn_2S_4$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{cd}$, $V_s$, $Cd_{int}$, and $S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment m the S-atmosphere converted $CdIn_2S_4$ single crystal thin films to an optical p-type. Also. we confirmed that In in $CdIn_2S_4$/GaAs did not form the native defects because In in $CdIn_2S_4$ single crystal thin films existed in the form of stable bonds.

• 한국세라믹학회지
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• 제38권12호
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• pp.1137-1143
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• 2001

본 연구에서는 적외선 반사체 제조를 위하여 MAS(MgO-Al$_2$O$_3$-SiO$_2$)계 유리로부터 핵행성 및 결정성장의 2단계 열처리에 의해 cordierite(2MgO.2Al$_2$O$_3$5SiO$_2$)와 rutile(TiO$_2$)을 주결정상으로 하는 결정화유리를 제조하였다. MgO-Al$_2$O$_3$-SiO$_2$3성분계 조성에 조핵제로 TiO$_2$를 첨가하여 용융법으로 유리를 제조한 후 결정화 열처리를 하여 핵생성 및 결정화 거동과 결정화유리의 결정상, 입자 크기와 확산 반사율과의 관계를 관찰하였다. 그 결과 75$0^{\circ}C$에서 3시간동안 핵생성 시킨 후 110$0^{\circ}C$/5hr 이상의 열처리 조건에서 cordierite와 rutile이 주결정상으로 석출되었으며 570~2500nm 범위에서 90% 이상의 반사율을 갖는 결정화유리를 제조하였다.

• 한국결정성장학회지
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• 제30권6호
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• pp.232-236
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• 2020

본 연구에서는 광 발광특성이 우수하여 각종 광장치에 사용되고 있는 CaF2-Al2O3-B2O3-TiO2(CABT) 계 유리의 열처리 조건 및 결정상 생성에 따른 광학적 특성을 연구하였다. CAB 유리의 핵형성 및 결정성장을 제어하기 위해 핵형성제 TiO2를 첨가하고, 발광 특성을 향상시키기 위해 희토류 이온 Eu2O3를 첨가하였다. 열처리 조건에 따른 결정 성장 특성을 확인하기 위해 DTA 분석을 수행하였으며, 이에 따른 나노 크기 결정상 변화에 대한 XRD 및 SEM 분석을 수행하였다. 분석 결과 100 nm 크기의 결정생성은 발광강도를 향상시키지만 그 이상의 큰 결정 입자생성은 오히려 발광 특성을 저하시켰다.

• 조명전기설비학회논문지
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• 제25권2호
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• pp.10-18
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• 2011

In order to develop highly-integrated RGBY(Red, Green, Blue, Yellow) LED light, a high thermal radiation ceramic package was manufactured, and the encapsulation process was applied with a vacuum printing encapsulation system(VPES). After the completion of vacuum printing, the shape of the encapsulation layer could be controlled by heat treatment during the curing process, and the optical power became highly increased as the encapsulation layer approached a dome shape. The optical characteristics involved in a Correlated Color Temperature(CCT), a Color Rendering Index (CRI), and the efficiency of RGBY LED light were able to be identified by the experimental designing method. Regarding the characteristics of the white light of RGBY LED light, which were measured on the basis of the aforementioned optical characteristics, CRI posted 88, CCT recorded 5,720[$^{\circ}K$], and efficiency exhibited 52[lm/W]. The chip temperature of RGBY LEDs was below 55[$^{\circ}C$] when the consumption power of LED chips was 0.1[W] for the red, 0.3[W] for the green, 0.08[W] for the blue, and 0.24[W] for the yellow. Also, the thermal resistance of the highly-integrated RGBY LED light measured by T3Ster was 2.3[K/W].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.257-265
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• 2002

A stoichiometric mixture of evaporating materials for AgInS$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, AgInS$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperatures were 680 $^{\circ}C$ and 410 $^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.35${\times}$10$\^$16/ cm$\^$-3/ and 294 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin films was found to be E$\_$g/(T) : 2.1365 eV - (9.89 ${\times}$ 10$\^$-3/ eV) T$^2$/(2930 + T). After the as-grown AgInS$_2$ single crystal thin films was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal thin films has been investigated by using the photoluminescence(PL) at 10 K. The native defects of V$\_$AG/, V$\_$S/, Ag$\_$int/, and S$\_$int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted AgInS$_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in AgInS$_2$/GaAs did not form the native defects because In in AgInS$_2$ single crystal thin films did exist in the form of stable bonds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.76-77
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• 2005

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410$^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXO). The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorpt ion spectra was wel1 described by the Varshni's relation, $E_g$(T) = 2.8382 eV - ($8.86\times10^{-4}$ eV/H)$T_2$/(T + 155K). After the as-grown single crystal $CuAlSe_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal $CuAlSe_2$ thin films has been investigated by PL at 10 K. The native defects of $V_{cd}$, $V_{se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal $CuAlSe_2$ thin films to an optical n-type. Also. we confirmed that hi in $CuAlSe_2$/GaAs did not form the native defects because Al in single crystal $CuAlSe_2$ thin films existed in the form of stable bonds.

• 한국결정성장학회지
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• 제11권6호
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• pp.274-284
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• 2001

A stoichimetric mixture of evaporating materials for $AgInS_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films. $AgInS_2$mixed crystal was deposited on thorughly etched semi-insulating GaAs(100) substrate by the Hot wall Epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $AgInS_2$ single crystal the films measured from Hall effect by van der Pauw method are $9.35\times 10^{16}/\terxtm{cm}^3$ and $294\terxtm{cm}^2$/V.s at 293 K, respectively. From the optical absorption measurement the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin film was found to be $E_g$(T)= 2.1365eV-($9.89\times 10^{-3}eV/T^2$/(2930+T). After the as-grown $AgInS_2$ single crystal thin films was annealed in $Ag^-S^-$ and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal the films has been investigated by using the photoluminescence(PL) at 10K. The native defects of $V_{Ag},V_s, Ag_{int}$ and $S_{int}$ int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $AgInS_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in $AgInS_2$ /GaAs did not form the native defects because In is $AgInS_2$ single crystal thin films did exist in the form of stable bonds.

• 반도체디스플레이기술학회지
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• 제10권2호
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• pp.73-81
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• 2011

We manufactured the inkjet printing system for the application into the nano Ag finger line interconnection process in Si solar cells. The home-made inkjet printer consists of motion part for XY motion stage with optical table, head part, power and control part in the rack box with pump, and ink supply part for the connection of pump-tube-sub ink tanknozzle. The ink jet printing system has been used to conduct the interconnection process of finger lines on Si solar cell. The nano ink includes the 50 nm-diameter. Ag nano particles and the viscosity is 14.4 cP at $22^{\circ}C$. After processing of inkjet printing on the finger lines of Si solar cell, the nano particles were measured by scanning electron microscope. After the heat treatment at $850^{\circ}C$, the finger lines showed the smooth surface morphology without micropores.