Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Characteristics of IGZO Films Formed by Room Temperature with Thermal Annealing Temperature

상온에서 증착된 IGZO 박막의 열처리 온도에 따른 특성

  • Received : 2014.08.04
  • Accepted : 2014.08.20
  • Published : 2014.08.30
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Abstract

We investigated the structural, electrical and optical characteristics of IGZO thin films deposited by a room-temperature RF reactive magnetron sputtering. The thin films deposited were annealed for 2 hours at various temperatures of 300, 400, 500 and $600^{\circ}C$ and analyzed by using X-ray diffractometer, transmission electron microscopy, atomic force microscope and Hall effects measurement system. The films annealed at $600^{\circ}C$ were found to be crystallized and their surface roughness was decreased from 0.73 nm to 0.67 nm. According to XPS measurements, concentration of oxygen vacancies were decreased at $600^{\circ}C$. Optical band gap were increased to 3.31eV. The carrier concentration and Hall mobility were sharply increased at 600oC. Our results indicate that the IGZO films deposited at a room temperature can show better thin film properties through a heat treatment.

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