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http://dx.doi.org/10.5695/JKISE.2014.47.4.181

Characteristics of IGZO Films Formed by Room Temperature with Thermal Annealing Temperature  

Lee, Seok-Ryeol (LG Display Laboratory)
Lee, Kyong-Taik (LG Display Laboratory)
Kim, Jae-Yeal (LG Display Laboratory)
Yang, Myoung-Su (LG Display Laboratory)
Kang, In-Byeong (LG Display Laboratory)
Lee, Ho-Seong (School of Materials Science and Engineering, Kyungpook National University)
Publication Information
Journal of the Korean institute of surface engineering / v.47, no.4, 2014 , pp. 181-185 More about this Journal
Abstract
We investigated the structural, electrical and optical characteristics of IGZO thin films deposited by a room-temperature RF reactive magnetron sputtering. The thin films deposited were annealed for 2 hours at various temperatures of 300, 400, 500 and $600^{\circ}C$ and analyzed by using X-ray diffractometer, transmission electron microscopy, atomic force microscope and Hall effects measurement system. The films annealed at $600^{\circ}C$ were found to be crystallized and their surface roughness was decreased from 0.73 nm to 0.67 nm. According to XPS measurements, concentration of oxygen vacancies were decreased at $600^{\circ}C$. Optical band gap were increased to 3.31eV. The carrier concentration and Hall mobility were sharply increased at 600oC. Our results indicate that the IGZO films deposited at a room temperature can show better thin film properties through a heat treatment.
Keywords
IGZO film; R.F. magnetron sputtering; annealing;
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