• Title/Summary/Keyword: hall measurement

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Oxygen Adsorption Process on ZnO Single Crystal

  • 전진;한종수
    • Bulletin of the Korean Chemical Society
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    • v.18 no.11
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    • pp.1175-1179
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    • 1997
  • The adsorption of oxygen on ZnO was monitored by measuring the capacitance of two contacting crystals which have depletion layers originated from the interaction between oxygen and ZnO at 298 K-473 K. An admission of oxygen to the sample induced an irreversible increase in the depth and the amount of adsorbed oxygen was less than 0.001 monolayer in the experimental condition. The relation between pressure of oxygen and variation of the depth was tested from the view point of Langmuir or Freundlich isotherm. Using Hall effect measurement and kinetic experiment, a model equation on the adsorption process was proposed. From the results, it was suggested that oxygen adsorption depended on the rate of electron transfer from ZnO to oxygen while the amount of adsorbed oxygen was kinetically restricted by the height of surface potential barrier.

투명전극용 AZO 박막의 막 두께 의존성

  • Jo Beom-Jin;Geum Min-Jong;Seo Hwa-Il;Kim Gwang-Seon;Kim Gyeong-Hwan
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2005.09a
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    • pp.93-96
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    • 2005
  • In this study, AZO(ZnO:Al) thin film were Prepared by FTS(Facing Target Sputtering) system. The electrical, optical properties and crystalline of AZO thin film with thickness have been investigated. The thickness, transmittance, crystalline and electrical Properties of AZO thin film were measured by $\alpha$-step, UV-VIS spectrometer, hall effect measurement system, XRD and four-point probe, respectively. As a result, AZO thin film deposited with the transmittance over $80\%$ and the resistivity about $10^{-4}{\Omega}-cm$.

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Anomalous Nernst Effects of [CoSiB/Pt] Multilayer Films

  • Kelekci, O.;Lee, H.N.;Kim, T.W.;Noh, H.
    • Journal of Magnetics
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    • v.18 no.3
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    • pp.225-229
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    • 2013
  • We report a measurement for the anomalous Nernst effects induced by a temperature gradient in [CoSiB/Pt] multilayer films with perpendicular magnetic anisotropy. The Nernst voltage shows a characteristic hysteresis which reflects the magnetization of the film as in the case of the anomalous Hall effects. With a local heating geometry, we also measure the dependence of the anomalous Nernst voltage on the distance d from the heating element. It is roughly proportional to $1/d^{1.3}$, which can be conjectured from the expected temperature gradient along the sample from the heat equation.

Design and Preparation of Cathode for Large Sputtering Thin Film (대면적 스퍼터링 박막 제작을 위한 캐소드 설계 및 제작)

  • Kim, Yujin;Kim, Sangmo;Kim, Kyung Hwan
    • Journal of the Semiconductor & Display Technology
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    • v.18 no.2
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    • pp.53-57
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    • 2019
  • In this study, we prepared sputtering cathode for large sputtering thin film in the facing targets sputtering(FTS) system. Before fabrication of cathode equipment, we investigated optimal magnetic flux in the sputtering cathode by using magnetic field stimulation(Comsol). According to the result of magnetic field stimulation, we manufactured the cathode. After we mounted laboratory-designed cathode on FTS system, the discharge properties were observed in vacuum condition. In addition, ITO films were deposited on glass substrate and their electrical and optical properties were investigated by various measurements (four-point probe, UV-VIS spectrometer, field emission scanning electron microscopy(FE-SEM), Hall-effect measurement).

Microcurrent Effect with Inverse Proportional Characteristics between the Concentration and Degree of Movement of the Carrier (케리어의 농도와 이동도 사이의 반비례 특성을 갖는 미소전류 효과)

  • Oh, Teresa
    • Journal of the Semiconductor & Display Technology
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    • v.18 no.1
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    • pp.70-73
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    • 2019
  • It was confirmed that current flowing in thin films below nm increases conductivity in diffusion currents by holes rather than electric currents by electrons. ZTO thin film, which was heat treated at $150^{\circ}C$, increased electron concentration, and thus increased capacitances. However, it was found that low current movement would be difficult as the degree of movement was reduced. Therefore, it was found that diffusion currents were more advantageous than drift currents by electrons in order to allow low current to be produced in very thin films of nm class.

Optimum Design of the Non-Destructive Testing System to Maximize the Magnetic Flux Leakages

  • Park, G. S.;P. W. Jang;Park, Y. W.
    • Proceedings of the Korean Magnestics Society Conference
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    • 2000.09a
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    • pp.539-545
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    • 2000
  • This paper describes the design method of the magnetic system to maximize the magnetic flux leakage (MFL) in non-destructive testing (NDT) system. The defect signals in MFL type NDT system mainly depends on the change of the magnetic leakage flux in the region of defect. The characteristics of the B-H curves are analyzed and the design method to define the operating point in B-H curves for the maximum leakage is performed. The computed MFL signal by nonlinear finite element method is verified by measurement using Hall sensors mounted on the 6 legs PIG in the 8 inches test tube with defects. The rhombic defects could be successfully composed from the defect signals.

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The Electrical Characteristics of Recrystallized Silicon by CW $CO_2$ Laser (CW $CO_2$ 레이저에 의하여 재결정화된 실리콘의 전기적 특성)

  • Park, Jong Tae;Lee, Moon Key;Kim, Bong Ryul
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.24 no.1
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    • pp.79-84
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    • 1987
  • In this study, the recrystallization of polycrystalline silicn by CW CO2 laser is reported. With a variation of CW CO2 laser power, the surface morphology of recrystallized silicon is observed by SEM and the value of resistivity and mobility is obtained by Hall measurement. From the obtained results, it is concluded that the polycrystalline silicon is locally melted at 39W laser power and the reduction of resistivity and the increase of mobility are caused by the increase of grain size and the reduction of the potentical barrier at grain boundaries.

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Accuracy Analysis of Ultrasonic, Magnetic and Radar Sensors for Manhole Monitoring

  • Khatatbeh, Arwa;Kim, Young-Oh;Kim, Hyeonju
    • Proceedings of the Korea Water Resources Association Conference
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    • 2021.06a
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    • pp.427-427
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    • 2021
  • During the rainy season, heavy downpours are always a source of concern for the world. Flooding and heavy rains can devastate communities, disrupt agriculture, and contribute to traffic accidents.. Weir and flow hall effect sensors are the conventional analytical methods for measuring flow rate; in this paper, we analyzed manhole flowrate statistics. The measurement of the flow rate of a notch/weir is a time-consuming task that necessitates continuous mathematical analysis. . We created three types of IoT sensors in this study: (HC-SR04 ultrasonic, YF-S201 magnetic, and HB100 radar), which take the sensor's real-time input signal and estimate the flow using a notch equation and a previously calibrated optimized coefficient of discharge. The proposed systems are cost-effective, but in terms of accuracy, we found that the HC-SR04 ultrasonic sensor is the best of the three systems

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Characterization analysis of $CuInS_2$ absorber layer grown by heat treatment of low temperature (저온에서 열처리한 $CuInS_2$ 광흡수층 박막 특성분석)

  • Yang, Hyeon-Hun;Back, Su-Ung;Kim, Han-Wool;Han, Chang-Jun;Lee, Suk-Ho;Jeong, Woon-Jo;Park, Gye-Choon;Lee, Jin;Chung, Hae-Deok
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.98.2-98.2
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    • 2010
  • $CuInS_2$ thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}$ [$cm^{-3}$], 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}$ [${\Omega}{\cdot}cm$], respectively.

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User Performance Measures for iTV Remote Control of Pointing Devices (iTV 리모컨 포인팅 디바이스 수행도 측정)

  • Cheong, Kyeong-Kyun;Kim, In-Soo;Park, Sung-Kwon;Park, Yong-Jin
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.11 no.3
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    • pp.145-150
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    • 2011
  • In this study, we assessed the performance of the test remote pointing device that is applicable to interactive TV (iTV). An empirical test was carried out with the pointing devices in three different interface methods that are recently tried in the industry. For the measurement, a directional task was performed on the linear track described in the conventional ISO 9241-Part 9. The measured variables included the movement time, accuracy, throughput and the subjective satisfaction. The result showed that the motion time was better in the device in the GyroPoint method than the other devices, but the accuracy of the GyroPoint device was lower than that of the devices in the Hall Mouse and OFN methods. It was found that the throughput and the subjective satisfaction were dependent upon the individual input devices. Since this study was conducted on the major point devices that are currently tried and analyzed the problems and characteristics, it is assumed that this study will provide useful data for the design of the remote pointing device that is more suitable to the iTV environment.