• Proceeding of EDISON Challenge
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• 2015.03a
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• pp.405-407
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• 2015

Graphene의 bandgap이 0eV이고 hBN의 bandgap이 4~5eV라는 이기 때문에 두 물질을 혼합하였을 때 태양전지로 쓰기 좋은 1.2eV의 bandgap을 가지는 물질을 만들 수 있을 거라 생각된다. 이 점을 착안하여 hBN에 Carbon을 도핑시켜 1.2eV의 bandgap을 갖는 물질을 이론적으로 만들어 보았다.

• Journal of the Korean Ceramic Society
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• v.40 no.9
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• pp.867-873
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• 2003

$Si_{3}N_{4}$-BN based machinable ceramics were fabricated by hot-pressing at $1800^{\circ}C$ for 2 h under a pressure of 25 MPa. The microstructure, mechanical properties, and machinability were investigated. With increasing h-BN content from 5 vol% to 30 vol%, three point flexural strength decreased from 1000 MPa of monolithic S $i_3$ $N_4$ to 720～400 MPa. The fracture toughness, $K_{IC}$ , was decreased from 7.6 MPaㆍ$m^{1/2}$ of monolithic S $i_3$ $N_4$ to 6.5～4.1 MPaㆍ$m^{1/2}$. The grain size and aspect ratio of $\beta$-S $i_3$ $N_4$ slightly decreased with increasing h-BN content. S $i_3$ $N_4$ monolith could not be machined due to brittle fracture, but S $i_3$ $N_4$-BN based machinable ceramics could be machined without fracture, showing excellent machinability. With increasing h-BN content, the thurst force during cutting and micro-drilling process was decreased.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.155-161
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• 2000

BN films composed of c-BN(70%) and h-BN(30%) phases have been synthesized by the ion beam assisted deposition (IBAD) process and stabilized by post-annealing. Boron was e-beam evaporated at 1.2 $\AA$/sec and nitrogen was ionized and accelerated at about 100 eV by the end-hall type ion gun. Substrates were negatively biased by DC 400 and 500 V, respectively, and heated at $700^{\circ}C$. Synthesized BN films were in-situ post-annealed at 700 or $800^{\circ}C$, respectively, for 1 hr without breaking vacuum. BN films without post-annealing were peeled off from substrates immediately when they were exposed to the air while those with post-annealing at $800^{\circ}C$ were stabilized. Post annealing reduced the film stress from 4.9 GPa to 3.4 GPa, but no considerable stress release in the c-BN phase was observed, contrary to previous reports that the stress relaxation in the c-BN phase is the main mechanism for the stabilization. Structural and chemical relaxation of non c-BN phase is supposed to be responsible for the film stress reduction and, in turn, stabilization, especially when the c-Bn content of the film is not high.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.44-44
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• 2011

현존하는 초경도 박막물질 중 입방정 질화붕소(cBN)은 철계 금속과의 반응안정성 및 낮은 온도에서의 합성가능성 등 많은 장점을 가지고 있다. 그러나 필수로 수반되는 이온충돌 효과로 인해 박막 내 높은 잔류응력으로 인한 박리 현상으로 응용이 어려운 실정에 있다. 현재까지 이를 개선하기 위해 수소를 첨가하여 박막의 잔류응력을 줄이는 연구, B4C 타겟을 이용하여 B-C-N 의 gradient layer를 설계하여 점진적으로 잔류응력을 감소시키는 연구 등 많은 연구들이 진행되고 있다. 본 연구에서는 MOCVD로 만들어진 NCD(Nano Crystalline Diamond) buffer layer 위에 RF-UBM(unbalanced magnetron) PVD를 이용하여 BN을 증착시켰다. hBN 타겟을 이용하여 2mTorr에서 400W 의 RF 파워를 사용하여 기판에 RF bias를 인가해 실험하였다. cBN 박막과 기판의 lattice mismatch 를 줄이기 위해서 본 연구소에서 제공되는 NCD 기판을 사용하였으며, 다이아몬드 기판과 cBN 박막의 1:1 에피성장을 이루기 위해 상온에서부터 800도까지 온도 변화를 주어 cBN을 증착시켰다. FTIR(Fourier transform infrared spectroscopy)로 $sp^2$구조인 hBN과 $sp^3$구조인 cBN의 성장유무를 확인하였으며, FTIR peak intensity 차이로 박막내 cBN의 함량을 계산하였고, Scratch test로 박막과 기판사이의 밀착력을 상대적으로 비교하였으며, 격자의 에픽성장을 확인하기 위해 FIB 의 작업을 거쳐 HRTEM 으로 각 위치별로 SAD pattern를 이용하여 성장거동을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.286-286
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• 2016

Hexagonal boron nitride (hBN) is a dielectric insulator with a two-dimensional (2D) layered structure. It is an appealing substrate dielectric for many applications due to its favorable properties, such as a wide band gap energy, chemical inertness and high thermal conductivity[1]. Furthermore, its remarkable mechanical strength renders few-layered hBN a flexible and transparent substrate, ideal for next-generation electronics and optoelectronics in applications. However, the difficulty of preparing high quality large-area hBN films has hindered their widespread use. Generally, large-area hBN layers prepared by chemical vapor deposition (CVD) usually exhibit polycrystalline structures with a typical average grain size of several microns. It has been reported that grain boundaries or dislocations in hBN can degrade its electronic or mechanical properties. Accordingly, large-area single crystalline hBN layers are desired to fully realize the potential advantages of hBN in device applications. In this presentation, we report the growth and transfer of centimeter-sized, nearly single crystal hexagonal boron nitride (hBN) few-layer films using Ni(111) single crystal substrates. The hBN films were grown on Ni(111) substrates using atmospheric pressure chemical vapor deposition (APCVD). The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and remaining Ni(111) substrates were repeatedly re-used. The crystallinity of the grown films from the atomic to centimeter scale was confirmed based on transmission electron microscopy (TEM) and reflection high energy electron diffraction (RHEED). Careful study of the growth parameters was also carried out. Moreover, various characterizations confirmed that the grown films exhibited typical characteristics of hexagonal boron nitride layers over the entire area. Our results suggest that hBN can be widely used in various applications where large-area, high quality, and single crystalline 2D insulating layers are required.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.13 no.2
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• pp.33-39
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• 2004

Sandblasting has recently been developed into a powder blasting technique for brittle materials. In this study, the machinability of $Si_3N_4$-hBN based machinable ceramics are evaluated for micro - pattern making processes using powder blasting. Material properties of the developed machinable ceramics according to the variation of h-BN contents give a good machinability to the ceramics. The effect of scanning times, the size of patterns and variation of BN contents on the erosion depth of samples without mask and samples with different mask patterns in powder blasting of $Si_3N_4$-hBN ceramics are investigated. The Parameters are the impact angle of $90^{\circ}$, the scanning times of nozzle up to 40, and the stand-off distances of 100mm The widths of masked pattern are 0.1mm 0.5mm and 1mm. The powder used is Alumina particles, WA#600. and the blasting pressure of powder is 0.2MPa. Through required experiments, the results are investigated and analyzed. As the results, the machinability of the developed ceramics increases as the BN contents in the ceramics.

• Journal of the Korean institute of surface engineering
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• v.41 no.2
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• pp.43-47
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• 2008

Cubic boron nitride(c-BN) films were deposited on tungsten carbide insert tool by microwave plasma enhanced chemical vapor deposition(MPECVD) from a gas mixture of triethyl borate$(B(C_2H_5O)_3)$, ammonia $(NH_3)$, hydrogen$(H_2)$ and argon(Ar). The qualities of deposited thin film were investigated by x-ray diffrac-tion(XRD), field emission scanning electron microscopy(FE-SEM) and micro Raman spectroscope. The surface morphologies of the synthesised BN as well as crystallinity appear to be highly dependent on the flow rate of $B(C_2H_5O)_3$ and $(NH_3)$ gases. The deposited film had more crystallized phases with 5 scem of $B(C_2H_5O)_3$ and $(NH_3)$ gases than with 2 sccm, and the phase was identified as c-BN by micro Raman spectroscope and XRD. The adhesion strength were also increased with increasing flow rates of $B(C_2H_5O)_3$ and $(NH_3)$ gases.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2002.05a
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• pp.12-12
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• 2002

hexagonal Boron Nitride (hBN), rhombohedral Boron Nitride (rBN)과 고밀도의 wurzitic Boron N Nitride (wBN), cubic Boron Nitride (cBN) 등의 다양한 상을 갖는 Boron nitride는 그 결정구조에 따라 저밀도, 고밀도 박막으로 분류되며 이중 hBN과 rBN은 층간 결합이 약한 $sp^2$ 결합특성을 가지고, wBN 과 cBN은 강한 $sp^3$ 결합특성을 가지고 있다. 현재까지 $sp^3$결합을 갖는 BN의 우수한 특성을 응용하기 위한 수 많은 연구들이 있어왔다. 특히 cBN은 다이아몬드에 버금가는 높은 경도뿐만 아니라 높은 화 학적 안정성 및 열전도성 등 우수한 물리화학적 특성을 가지고 있어 마찰.마모, 전자, 광학 등의 여러 분야에서의 산업적 응용이 크게 기대되고 있다. 그러나 이와 같이 BN박막의 기계적 물성과 관련한 연 구는 많이 진행되어 왔으나 전기.전자적, 광학적 특성에 관한 연구는 미비한 실정이다. 따라서 본 연구에서는 BN박막의 또 다른 웅용 분야를 탐색하고자 ME - ARE (Magnetically Enhanced A Activated Reactive Evaporation)법 에 의 해 합성 된 BN박막의 광학적 특성 에 관하여 조사하였다. BN박 막합성 은 전자총에 의 해 증발된 보론과 질소.아르곤 플라즈마의 활성 화반응증착(Activated Reactive E Evaporation)에 의해 이루어졌다. 기존의 ARE장치와 달리 열음극(hot cathode)과 양극(anode)사이에 평 행자기장을 부가하여 플라즈마의 증대시켜 반웅효율을 높였다. 합성실험용 모재로는 기본적인 특성 분 석을 위해 p-type으로 도핑된 (100) Si웨이퍼를 $30{\times}40mm$크기로 절단 후, 10%로 희석된 완충불산용액 에 10분간 침적하여 표면의 산화층을 제거한 후 사용하였으며, 광학특성 분석을 위해 $30{\times}30mm$의 glass를 아세톤으로 탈지.세척한 후 사용하였다. 박막합성실험에서 BN의 광학적 특성에 미치는 공정변수의 영향을 파악하기 위하여, 기판바이어스 전압, discharge 전류, $Ar/N_2$가스 유량비 등을 달리하여 증착하였다. 증착된 박막은 FTIR 분석을 통하 여 결정성을 확인하였으며, AFM 분석을 통하여 코팅층의 두께를 측정하였고, UV - VIS spectormeter를 이용하여 투광특성을 평가하였다.

• Proceeding of EDISON Challenge
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• 2015.03a
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• pp.320-323
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• 2015

본 연구에서는 18 atoms unit cell graphene film을 기반으로 한 graphene/h-BN heterostructure의 bandgap 변화에 대해 EDISON LCAODFTLab simulator의 DFT기반 전자구조계산을 통해 알아보았다. Graphene 상에 BN-doping 형태로 주어진 여러 heterostructure의 전자구조계산을 통해 태양전지의 이론적 최적효율을 나타내는 1.2eV 정도의 값을 갖는 구조를 찾을 수 있었다.

• Composites Research
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• v.33 no.3
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• pp.153-160
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• 2020

In this paper, hexagonal boron nitride (h-BN) particles were added between the sheets of prepreg, and the effect of on many properties of BN-embedded carbon fiber reinforced plastics was investigated. The amount of BN particles which corresponds with 0 to 15 wt% of total resin weight was used as an additive material. The tensile strength and the inter-laminar shear strength of BN-embedded CFRP samples were improved by maximally 13.6%, and 6.7%, respectively. The tendency changes of thermal, electrical conductivities and the morphology of cross-section of CFRPs were also observed. This study suggests the possibility of controlling the characteristics of carbon fiber-BN-epoxy composites to use for aerospace applications.