• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.91-92
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• 2005

The electromagnetic coupling effect in standard CMOS process is simulated and evaluated. EM coupling transfer characteristic between planar spiral inductors by isolation methode in standard CMOS have simulated and measured. Measurement results show that suppression of EM coupling effect by ground guardring. The evaluated structures are fabricated 1P5M(one poly, five metal) 0.25um standard CMOS process. These measurement results provide a isolation design guidelines in standard CMOS process for Rf coupling suppression.

• 한국전기전자재료학회논문지
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• 제20권8호
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• pp.697-700
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• 2007

A novel 2-Dimensional Suppressed Sidewall Injection Magnetotransistor (SSIMT) with high linearity has been fabricated on the standard CMOS technology and experimentally verified. The novel 2-Dimensional SSIMT overcomes the restriction of the standard CMOS technology. Experimental results of the fabricated 2-Dimensional SSIMT show that the variation of each collector output currents are extremely linear as a function of magnetic field from -200mT to 200mT at $I_B = 1 mA,\;V_{CE} = 5 V\;and\;V_{SE} = 5 V$. The relative sensitivity shows up to 13 %/T. The measured nonlinearity of the fabricated device is about 0.9%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.552-555
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• 1999

In this paper, the volume resistivity properties due to mixture ration of linear low density polyethylene(LLDPE) and ethylene vinyl acetate(EVA) are studied. Electrodes is composed of upper electrode 37(mm $\Phi$), guardring electrode(inner 55(mm $\Phi$ ), and lower electrode 87(mm $\Phi$ In order to measure the leakage current, We used electrometer and stable oven with temperature controller. Measurement method is to measure the leakage current of next specimen after applying the voltage according to 'Step Apply Methods' for ten minutes. In order to measure the volume resistivity properties, the micro electrometer is used, the range of temperature and applying voltage are 25 to 100[$^{\circ}C$] to 100[V] respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.443-446
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• 2003

A 2-Dimensional SSIMT(Suppressed Sidewall Injection Magnetotransistor) sensor with high linearity is presented in this paper. The prototype is fabricated by using the Hynix $0.6{\mu}m$ CMOS Process. The fabricated SSIMT shows that the variation of each collectors current are extremely linear by varing the magnetic induction from -200mT to 200mT at $I_B\;:\;1000{\mu}A,\;V_{CE}\;=\;5V\;and\;V_{SUB}\;=\;5V$. The relative sensitivity is up to 13%/T. At B = 0, magnetic offset is about 40mT, there relative sensitivity is 4.72%/T. The nonlinearity of the fabricated 2-D SSIMT is measured about 1.2%.