Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.11a
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- Pages.91-92
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- 2005
EM Coupling Effect of sprint inductors by isolation methode in standard CMOS process
Spiral 인덕터 간 격리방법에 따른 Electromagnetic 커플링 효과
- Choi, Moon-Ho (Chungbuk National Univ.) ;
- Kim, Han-Seok (Ansoft Korea) ;
- Jung, Sung-Il (Ansoft Korea) ;
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Kim, Yeong-Seuk
(Chungbuk National Univ.)
- Published : 2005.11.10
Abstract
The electromagnetic coupling effect in standard CMOS process is simulated and evaluated. EM coupling transfer characteristic between planar spiral inductors by isolation methode in standard CMOS have simulated and measured. Measurement results show that suppression of EM coupling effect by ground guardring. The evaluated structures are fabricated 1P5M(one poly, five metal) 0.25um standard CMOS process. These measurement results provide a isolation design guidelines in standard CMOS process for Rf coupling suppression.