• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.558-562
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• 1999

For 6H-SiC crystals which was obtained by sublimation growth, the formation of micropipes and internal planar defects was discussed in consideration of the inter-relationship between mass adsorption behavior and the defects origin on the growth interface on the basis of KSV theory and the the step growth pattern on the vicinal plane. Micropipes and planar defects was formed in the region which the step could not be grown by impurities impinging. It was realized that the internal defects formation was related to the crystallographic step planes formed on the growth interface and the migration of the molecules adsorbed on it.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.3
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• pp.89-94
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• 2016

In this study, the crystalline property of a-plane GaN epitaxial layer grown on r-plane sapphire by a HVPE method has been investigated according to the V/III ratio and the growth time of multi-step growth. Furthermore, these results were compared with the previous result obtained from the single-step growth of a-plane GaN on r-plane sapphire substrate. In the multi-step growth for a-plane GaN epitaxial layer on r-plane sapphire, the FWHM values of rocking curve in GaN epitaxial layer were decreased as the HCl source flow rate and the growth time were increased. The void formed in epitaxial layer was continuously decreased as the growth time in first step and second step using a higher HCl flow rate was increased. As a result, the GaN layer obtained with the longest growth time on the first step and second step exhibited the lowest FWHM values of 584 arcsec and the smallest dependence of azimuth angle.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.95-100
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• 2000

For the well-controlled growing in-situ heavily phosphorus doped polycrystalline Si films directly on Si wafer by reduced pressure chemical vapor deposition, a study is made of the two step growth. When in-situ heavily phosphorus doped Si films were deposited directly on Si (100) wafer, crystal structure in the film is not unique, that is, the single crystal to polycrystalline phase transition occurs at a certain thickness. However, the well-controlled polycrtstalline Si films deposited by two step growth grew directly on Si wafers. Moreover, the two step growth, which employs crystallization of grew directly on Si wafers. Moreover, the two step growth which employs crystallization of amorphous silicon layer grown at low temperature, reveals crucial advantages in manipulating polycrystal structures of in-situ phosphorous doped silicon.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.1
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• pp.1-5
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• 2001

SiC single crystals were grown in the various condition of growth pressure and temperature in the sublimation growth. We observed the growth step morphology and the shapes on the surface of as-grown crystals using an optical microscope, and characterized the co-relations among the growth parameters by adapting the Burton, Carbera and Frank theory(BCF theory)for nucleation and crystal growth.

• Journal of Electrical Engineering and Technology
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• v.6 no.2
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• pp.280-283
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• 2011

In the present work, a new approach is proposed for via interconnects of semiconductor devices, where multi-wall carbon nanotubes (MWCNTs) are used instead of conventional metals. In order to implement a selective growth of carbon nanotubes (CNTs) for via interconnect, the buried catalyst method is selected which is the most compatible with semiconductor processes. The cobalt catalyst for CNT growth is pre-deposited before via hole patterning, and to achieve the via etch stop on the thin catalyst layer (ca. 3nm), a novel 2-step etch scheme is designed; the first step is a conventional oxide etch while the second step chemically etches the silicon nitride layer to lower the damage of the catalyst layer. The results show that the 2-step etch scheme is a feasible candidate for the realization of CNT interconnects in conventional semiconductor devices.

• Asian-Australasian Journal of Animal Sciences
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• v.17 no.6
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• pp.794-798
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• 2004

An attempt was made to improve the efficiency of growth and lactation performance of dairy heifers subjected to a stair-step growth scheme using rice straw as the sole roughage source. Twenty-four young Holstein heifers were randomly assigned to either control or test group. The control diet met the National Research Council (NRC) requirement, with heifers calving at 24 to 26 mo of age. The test group was individually fed according to a schedule of 3, 2, 4, 2, 5 and 2 mo in which feed intake was alternately 20% below or 25% above the NRC requirements. Heifers on the stair-step growth pattern gained more body weight and consumed less dry matter (10.80 and 11.22%, respectively), resulting an increasing growth efficiency compared with the control. Body condition, first estrus, first conception, services per conception and calving difficulty (data not shown) were not affected. Milk yield of the test group was 8.5% higher than that of the control group. During the early lactation period, the milk yield was significantly higher in the stair-step group than in that of the control group (p<0.05). Milk composition was not affected by compensatory growth induced by the stair-step scheme. Also, weight at calving and calf growth performance was not affected by stair-step growth. The results indicate that using rice straw as a sole roughage source in a stair-step compensatory growth scheme can contribute to the improvement of growth efficiency and early lactation performance.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.2 no.4
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• pp.67-72
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• 2003

In this study, to investigate the effects of 2-step shot peening at the surface of spring steel, crack growth tests are conducted on spring steel and shot peened specimens. And then the residual stresses and fractographs are examined. The crack growth equation that can describe the whole crack growth behavior is used to evaluate the experiment results. The results show that fatigue crack glows slowly in the shot peened specimen than in the unpeened. And in the case of the 2-step shot peened specimen the initial stress intensity factor range and the fracture toughness is higher than the unpeened specimen due to the compressive residual stress. Fractographs show that the compressive residual stress of the surface suppress the fatigue crack opening and consequently slow crack growth rates.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.125-130
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• 2000

Two step growth of reduced pressure chemical vapor eposition has been successfully developed to achieve in-situ phosphorus-doped silicon epilayers, and the characteristic evolution on their microstructures has been investigated using scanning electron microscopy, transmission electron microscopy, and secondary ion mass spectroscopy. The two step growth, which employs heavily in-situ P doped silicon buffer layer grown at low temperature, proposes crucial advantages in manipulating crystal structures of in-situ phosphorus doped silicon. In particular, our experimental results showed that with annealing of the heavily P doped silicon buffer layers, high-quality epitaxial silicon layers grew on it. the heavily doped phosphorus in buffer layers introduces into native oxide and plays an important role in promoting the dispersion of native oxides. Furthermore, the phosphorus doping concentration remains uniform depth distribution in high quality single crystalline Si films obtained by the two step growth.

• Journal of Industrial Technology
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• v.35
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• pp.3-8
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• 2015

A study has been made on defects which are formed in manufacturing processes of engine bearing and also on fatigue crack growth behavior in each step of bearing metal manufacturing. After the first step(sinter brass powder on steel plate ; Series A) many voids are made on brass surface and its size is decreased by the second step(rolling process of sintered plate ; Series B). After the third step(re-sintering step of brass powder and rolling ; Series C) the number of voids is decreased and its type shows line. The time of fatigue crack initiation and the growth rate of fatigue crack are in order of Series A, Series B, Series C. These reasons are that void fosters the crack initiation and growth, and residual stress made by rolling process effects on the crack growth rate in Series B, C. In forming and machining processes by use of final bearing metal, crack was observed at internal corner of flange and peeling off was observed at junction between steel and brass. Owing to the above crack and peeling off, it is considered that there is a possibility of fatigue fracture during the application time.

• Journal of Practical Agriculture & Fisheries Research
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• v.12 no.1
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• pp.21-27
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• 2010

The objective of this study was to determine the effects of "Green-one" organic nutrient on mycelial growth and fruiting of P. ostreatus. The dilution concentrations of "Green-one" was treated as follows. There was control, 100, 200, 400 concentrations. That treatments were treated with step of each mycelial growth step. The best of growth steps was mycelial scratching step. At that time, DPI(Day required for primordial formation after inoculation) was shortened for 1 day. Valid germination stipe are 15 pieces, 3 pieces more than control. Stipe length and stipe diameter was long each 4mm, 3mm more than control. Pileus size is shortened than control. Yields per one bottle(g/850cc) was 146g increased 6.5% than control 137g/850cc.