• Title/Summary/Keyword: growth simulation

Search Result 1,092, Processing Time 0.024 seconds

An analysis of the porous silicon microstructure by using fractal dimension (쪽거리 차원을 통한 다공질규소의 미세구조 분석)

  • 김영유;홍사용;이춘우;류지욱;이기환;최봉수
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.9 no.3
    • /
    • pp.334-338
    • /
    • 1999
  • Porous silicon layers were fabricated with various conditions of HF concentration and current density. And their masses were measured. From these data, the porosity and fractal dimension were estimated and analyzed. We found that the porosity was proportional to the current density when the anodic reaction time was fixed and the constant values of fractal dimension could be estimated from a series of data with fixed HF concentration. The values of fractal dimension were decreased with increasing HF concentration. The obtained porosity and fractal dimension were compared with the 2-dimensional computer simulation based on diffusion limited deposition model. According to the simulation, the porosity was proportional to the diffusion length and the fractal dimension was inversely proportional to the diffusion length. Since, the diffusion length is proportional to current density and inversely proportional to base concentration, our experimental data qualitatively agreed with the results from the simulation. The porosity obtained by experiments, however, was not consistent with the results by simulation.

  • PDF

Prediction and Evaluation of the Wind Environment in Site Planning of Apartment Housing by CFD (아파트 주거의 배치계획에 있어 CFD에 의한 풍환경의 예측과 평가)

  • Sohn, Saehyung
    • KIEAE Journal
    • /
    • v.10 no.2
    • /
    • pp.63-69
    • /
    • 2010
  • Diverse problems in wind environment has occurred through rapid urbanization and growth of high-rise building numbers, This study aims to propose the CFD (Computational Fluid Dynamics) simulation method and evaluation standard of wind environment in site planning of high rise apartment housing. The CFD simulation method proposed in this study is not existing detail simulation, but it is the method that a designer can correct and develop the design through immediate evaluation of design options in concept design phase. Therefore, the proposed CFD simulation method of wind environment in this study uses the BIM based CFD tool in which the 3D model in concept design phase can be used as for the CFD simulation. In this paper, the study examines existing evaluation standards of comfortableness level in wind environment for pedestrian near buildings, and selects new evaluation method which is possible to apply to the proposed CFD simulation method. In addition, it is to examine calculation time-spending and appropriate mesh division method for finding CFD result which is useful to find the best design options in aspect of wind environment in concept design phase. Furthermore, it proposes the wind environment evaluation method through BIM based CFD simulation.

Process design for solution growth of SiC single crystal based on multiphysics modeling (다중물리 유한요소해석에 의한 SiC 단결정의 용액성장 공정 설계)

  • Yoon, Ji-Young;Lee, Myung-Hyun;Seo, Won-Seon;Shul, Yong-Gun;Jeong, Seong-Min
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.26 no.1
    • /
    • pp.8-13
    • /
    • 2016
  • A top-seeded solution growth (TSSG) is a method of growing SiC single crystal from the Si melt dissolved the carbon. In this study, multiphysics modeling was conducted using COMSOL Multiphysics, a commercialized finite element analysis package, to get analytic results about electromagnetic analysis, heat transfer and fluid flow in the Si melt. Experimental results showed good agreements with simulation data, which supports the validity of the simulation model. Based on the understanding about solution growth of SiC and our set-up, crystal growth was conducted on off-axis 4H-SiC seed crystal in the temperature range of $1600{\sim}1800^{\circ}C$. The grown layer showed good crystal quality confirmed with optical microscopy and high resolution X-ray diffraction, which also demonstrates the effectiveness of the multiphysics model to find a process condition of solution growth of SiC single crystal.

Investigation of thermodynamic analysis in GaN thick films gtowth (GaN 후막 증착의 열역학적 해석에 관한 연구)

  • Park, Beom Jin;Park, Jin Ho;Sin, Mu Hwan
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.8 no.3
    • /
    • pp.387-387
    • /
    • 1998
  • This paper reports on a thermodynamic analysis for the GaN thick film growth by vapor phaseepitaxy method. The thermodynamic calculation was performed using a chemical stoichiometric algorism. Thesimulation variables include the growth temperature in a range 400~1500 K, the gas ratios $(GaCl_3)/(GaCl_3+NH_3)$and $(N_2)/(GaCl_3+NH_3)$. The theoretical calculation predicts that the growth temperature of GaN be in thelower range of 450~750 K than the experimental results. The difference in the growth temperature betweenthe simulation and the experiments indicates that the vapor phase epitaxy of GaN is kinetically limited,presumably, due to the high activation energy of thin film growth.

Mathematical Analysis of a High Density Animal Cell Culture with a Spin-Filter (회전식 여과기를 이용한 고농도 동물세포배양의 수학적 해석)

  • 박흥우
    • KSBB Journal
    • /
    • v.9 no.2
    • /
    • pp.230-237
    • /
    • 1994
  • Spin-filters are used as cell separation devices for achieving high cell density and high productivity in animal cell culture. We have proposed a model for the cell growth in a spin-filter perfusion culture and examined the effects on cell growth by several parameters including ammonia inhibition, specific growth rate, specific feeding rate, and cell retention. Results from computer simulation and sensitivity analysis indicate that the cell retention affects the cell growth mostly while there is a significant inhibition on cell growth by the ammonia accumulated during the culture. The specific feeding rate has minimal effects on cell growth, which is consistant with the fact that the cell growth with a step feeding is quite similar to that with a continuous feeding.

  • PDF

Growth Degree of Quercus Community Plantations for Effective Vegetation Restoration (효과적인 식생복원을 위한 참나무류 군락 식재의 생장량에 관한 연구)

  • Mi-Jin Kim;Eun-Suk Cho;Hee-Jeong Jeong;Dong-gil Cho
    • Journal of Environmental Science International
    • /
    • v.32 no.3
    • /
    • pp.161-171
    • /
    • 2023
  • The present study evaluated growth factors affecting oak community plantations through literature review and a field survey. Specifically, 41 related literature sources were analyzed and field surveys were conducted to collect growth data. Previous studies were analyzed to identify variables with high frequency of use. The frequency of use was in the order of tree size > environment > planting density > forest age. Analysis of factors impacting height and diameter growth revealed that the growth rate of species other than Quercus variabilis was negative in the field survey. This may be because of differences between the actual trees planted and specifications in the construction drawings, which may be attributed to the site conditions and decisions made by the project subject during construction. Furthermore, simple linear regression analysis was conducted with time, height at planting, density, and species code as the independent variables and growth rate as the dependent variable. A strong positive linear correlation was noted between height and diameter. This work builds a foundation for developing a forest restoration model and simulation program based on a regression model derived from the four variables tested.

The Effect of Speed of Deposited Atom on Growth Morphology (증착원자의 속력이 성장 지형에 미치는 영향)

  • Seo, J.;Shim, H.S.;Kim, S.H.
    • Journal of the Korean Vacuum Society
    • /
    • v.21 no.2
    • /
    • pp.86-92
    • /
    • 2012
  • We have studied the effect of speed of deposited atom on morphology evolution during Glancing Angle Deposition (GLAD). Using Kinetic Monte Carlo simulation that incorporate molecular dynamics simulations, we have shown that the rough surface morphology became smoother as the speed of deposited atom is increased. The growth exponent ${\beta}$ change from 0.97 to 0.67 as the speed increase from ${\upsilon}_0$ to $10{\upsilon}_0$ in the case of GLAD. We also examined the effect of speed of deposited atom for the case of chemical vapor deposition (CVD) simulation. Compared to GLAD, the variation in scaling exponent ${\beta}$ is small but the speed of deposited atom also have considerable effect on growth morpholgy in the case of CVD.