• 제목/요약/키워드: growth simulation

검색결과 1,085건 처리시간 0.026초

지식성장 잠재력 측정을 위한 동태적 지식경영시스템 시뮬레이션 모델 개발에 관한 연구 (Knowledge Management Systems Simulation Model for Measuring Knowledge Growth Potentials)

  • 김상욱;조현웅
    • 한국시스템다이내믹스연구
    • /
    • 제11권1호
    • /
    • pp.103-131
    • /
    • 2010
  • This paper aims to investigate a dynamic mechanism underlying the process of knowledge creation and growth with a focus on the 'knowledge-friendly culture' conceptually coined by Davenport and Prusak in 2000. To achieve this objective, key attributes of knowledge are first identified by exploring the generic characteristics and information and interpreting the definitions of knowledge, from which four modes of knowledge growth (Socialization, Externalization, Combination, Internalization) are delineated into a dynamic SECI model by identifying cultural attributes underlying each mode and modeling their casual relationships based on the systems thinking. Further, a series of sensitivity analysis through computer simulation were made to find how 'knowledge-friendly' cultural factors affect the knowledge growth. It is found that individual knowledge is most influenced by organization's cohesion whereas organizational knowledge is most affected by the openness of organization.

  • PDF

화재 성장 모델이 객차내 화재 특성에 미치는 영향에 관한 수치해석적 연구 (A Numerical Study of the Effect off Fire Growth Model on Fire Characteristics in a Carriage)

  • 김성찬;유홍선;최영기;김동현
    • 한국철도학회논문집
    • /
    • 제7권3호
    • /
    • pp.180-185
    • /
    • 2004
  • The present study investigates the effect of fire growth model on fire development characteristics in a carriage. The parallel processing version of FDS code is used to simulate the fire driven flow in a carriage and two types of fire growth model which are flame spread model and t$^2$ model are examined for the same geometrical condition. The heat release rates(HRR) of both model are similar each other until 30 s after ignition, but the flame spread model predicts 5 times higher than those of the t$^2$ fire model during the quasi-steady fire period. Maximum heat release rate in the case of flame spread model reaches about to 12 MW at 100 s after fire ignition. Also, various database of fire properties for combustible materials and more elaborate combustion model considering the flame spreading phenomena are required for better predictions of fire development characteristics using numerical simulation.

이온 질화에 의해 크롬 도금 층 위에 형성된 크롬 질화물의 성장에 관한 전산 모사 (Computer Simulation for the Growth of Cr-nitride Formed on Electroplated Cr during ion-Nitriding)

  • 엄지용;이병주;남기석;권식철;권혁상
    • 한국표면공학회지
    • /
    • 제34권3호
    • /
    • pp.231-239
    • /
    • 2001
  • The structure and composition of Cr-nitrides formed on an electroplated hard Cr layer during an ionnitriding process was analyzed, and the growth kinetics of the Cr-nitrides was examined as a function of the ion-nitriding temperature and time in order to establish a computer simulation model prediction the growth behavior of the Cr-nitride layer. The Cr-nitrides formed during the ion-nitriding at $550~770^{\circ}C$ were composed of outer CrN and inner $Cr_2$N layers. A nitrogen diffusion model in the multi-layer based on fixed grid FDM (Finite Difference Method) was applied to simulate the growth kinetics of Cr-nitride layers. By measuring the thickness of each Cr-nitride layer as a function of the ion-nitriding temperature and time, the activation energy for growth of each Cr-nitride was determined; 82.26 KJ/mol for CrN and 83.36 Kj/mol for $Cr_2$N. Further, the nitrogen diffusion constant was determined in each layer; $9.70$\times$10^{-12}$ /$m^2$/s in CrN and $2.46$\times$10^{-12}$ $m^2$/s in $Cr_2$N. The simulation on the growth kinetics of Cr-nitride layers was in good agreements with the experimental results at 550~72$0^{\circ}C$.

  • PDF

Long-Term Growth Model in Myanmar Based on the Growth Trajectory of Vietnam

  • JEON, Injae;CHO, Yooncheong
    • The Journal of Asian Finance, Economics and Business
    • /
    • 제8권2호
    • /
    • pp.771-781
    • /
    • 2021
  • The purpose of this study is to identify major drivers of Myanmar's long-term economic growth and draw implications to implement development policies. This study investigated Myanmar, as the country is the most recently opened economy in Southeast Asia. This study conducted simulation analysis based on scenarios by applying World Bank's Long-Term Growth Model, Penn World Table 9.1, and World Development Indicator data. This study makes extensive use of LTGM and the LTGM-TFP extension to improve the validity of models for data calibration. This study confirms the validity of the model with data calibration and specifies scenarios for simulation analyses by setting the growth trajectory of Vietnam due to common geographical, political, and economic conditions. Main findings include that Myanmar's economic growth rate will continue to fall below 3% in 2040 without proper improvement of growth drivers. The results of this study also provide that total factor productivity growth and female labor participation are key factors for Myanmar's long-term economic growth. This study advises policymakers in Myanmar to strengthen human capital, which is crucial for total factor productivity growth in Myanmar's context and directly affects economic growth. Further, labor market policies to promote female labor participation is important to sustain economic growth.

SiC 용액 성장을 위한 수치 시뮬레이션의 최적화 (Numerical simulation optimization for solution growth of silicon carbide)

  • 김영곤;최수훈;이채영;최정민;박미선;장연숙;정성민;이명현;김영희;서원선;이원재
    • 한국결정성장학회지
    • /
    • 제27권3호
    • /
    • pp.130-134
    • /
    • 2017
  • 본 연구는 SiC 용액 성장에서 Cr 40 %가 첨가된 Si melt 내부의 용액과 탄소흐름의 변화를 수치적으로 분석하여 장시간 성장과 고품질의 SiC 단결정을 얻기 위한 최적공정 조건의 설계를 목적으로 진행하였다. 수치 시뮬레이션으로는 crystal growth simulator ($CGSim^{TM}$, STR Group Ltd.)가 사용되었다. 결과적으로, 성장온도, 종자정축과 도가니축의 회전속도 및 성장 시 종자정의 위치에 따라 melt내부의 용액 흐름과 탄소흐름의 속도 및 방향이 변화함으로써 더 균일한 온도구배를 형성하여 안정적인 성장이 이루어지는 조건을 확인하였다. 그러므로, 성장조건들을 조절함으로써 시뮬레이션 상에서 실험조건의 최적화가 가능하였고 향후 실제 실험에서도 많은 도움이 될 것으로 예상된다.

고온하 복수 표면균열의 성장 합체거동과 시뮬레이션에 관한 연구 (Fatigue Crack Growth, Coalescence Behavior and its Simulation on Multi-Surface Cracks Under the Elevated Temperature)

  • 서창민;황남성;윤기봉
    • 한국해양공학회지
    • /
    • 제9권1호
    • /
    • pp.142-151
    • /
    • 1995
  • A simulation program concerned with multi-surface fatigue cracks which initiated at the semi-circular surface notches has been developed to predict their growth and coalescence behaviors at the elevated temperature. Three kinds of coalescence models such as SPC(surface point connection), ASME and BSI(British Standards Institution) conditions were applied, and the results of the simulation were compared with those of the experiment. This simulation is able to enhance the reliance and integrity of structures especially under the elevated temperature which have lots of difficulties in experiments and applications. This shows that the simulation result has utility for fatigue life prediction. Even though all the specimens were the same shape, the error rate was increased in accordance with the applied stress to the specimen. Among the material constants C and m in the narrow band, the results applied upper values of the band to the simulation has shown quite small error compared with the experiment results.

  • PDF

Improvement of Vegetation Index Image Simulations by Applying Accumulated Temperature

  • Park, Jin Sue;Park, Wan Yong;Eo, Yang Dam
    • 한국측량학회지
    • /
    • 제38권2호
    • /
    • pp.97-107
    • /
    • 2020
  • To analyze temporal and spatial changes in vegetation, it is necessary to determine the associated continuous distribution and conduct growth observations using time series data. For this purpose, the normalized difference vegetation index, which is calculated from optical images, is employed. However, acquiring images under cloud cover and rainfall conditions is challenging; therefore, time series data may often be unavailable. To address this issue, La et al. (2015) developed a multilinear simulation method to generate missing images on the target date using the obtained images. This method was applied to a small simulation area, and it employed a simple analysis of variables with lower constraints on the simulation conditions (where the environmental characteristics at the moment of image capture are considered as the variables). In contrast, the present study employs variables that reflect the growth characteristics of vegetation in a greater simulation area, and the results are compared with those of the existing simulation method. By applying the accumulated temperature, the average coefficient of determination (R2) and RMSE (Root Mean-Squared Error) increased and decreased by 0.0850 and 0.0249, respectively. Moreover, when data were unavailable for the same season, R2 and RMSE increased and decreased by 0.2421 and 0.1289, respectively.

사파이어 단결정의 초크랄스키 성장공정에 대한 유한요소분석 (Finite element analysis for czochralski growth process of sapphire single crystal)

  • 임수진;신호용;김종호;임종인
    • 한국결정성장학회지
    • /
    • 제21권5호
    • /
    • pp.193-198
    • /
    • 2011
  • 최근 사파이어 결정은 LED 응용부품에 사용되고 있고, CZ 성장공정은 고 품질의 사파이어 단결정을 성장시키기 위한 중요한 기술중의 하나이다. 고 품질의 단결정을 성장하기 위해서는 CZ 성장로 내부의 열 및 질량 전달현상의 제어가 필요하다. 본 연구에서는 유도 가열된 CZ 성장로에 대한 사파이어 결정의 성장공정을 FEM을 사용하여 수치적으로 분석하였다. 본 연구의 결과, 성장로의 rpm이 증가함에 따라 고온부는 도가니 표면에서 융액의 내부로 이동하고, 고-액 계면은 평편한 형태로 변화되는 것으로 분석되었다. 또한 성장된 결정의 고-액 계면은 초기에 형성된 결정의 shoulder 형상에 의해서도 영향을 받는 것으로 나타났다.

컴퓨터 모델링과 시뮬레이션을 통한 반도체 FAB Line 분석 (Analysis semiconductor FAB line on computer modeling & simulation)

  • 채상원;한영신;이칠기
    • 한국시뮬레이션학회:학술대회논문집
    • /
    • 한국시뮬레이션학회 2002년도 추계학술대회 논문집
    • /
    • pp.115-121
    • /
    • 2002
  • The growth of semiconductor industry attracted to researchers like design, facility technique and making small size chip areas. But nowadays, cause of technology extension and oversupply and price down, yield improvement is the most important point on growth. This paper describes the computer mode]ing technique as the solutions to analyze the problem, to formalize the semiconductor manufacturing process and to build advanced manufacturing environments. The computer models are built referring an existing 8' wafer production line in Korea.

  • PDF