• 한국세라믹학회지
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• 제32권2호
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• pp.147-154
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• 1995

Abnormal grain growth behavior of BaTiO3 ceramics with controlling of particle size distribution of calcined powder was investigated. The particle size distribution was controlled by changing the calcining temperature or by using of classification and regrinding process. With broadening of the normallized size distribution in calcined powder, it showeda normal grain growth behavior in sintered body due to an increase of volume fraction of seed grain in the calcined powder. It was supposed that the seed grains could easily contact each other for the rapid grain growth during sintering process and resulted in fast switching-over from abnormal to normal grain growth stage.

• 한국세라믹학회지
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• 제32권1호
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• pp.51-56
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• 1995

Variation of sintered density of BaTiO3 powder calcined at 120$0^{\circ}C$ and 135$0^{\circ}C$ was investigated with respect to the grain growth behavior. It was found that BaTiO3 powder, which was calcined at 120$0^{\circ}C$, showed abnormal grain growth behavior during sintering process. At initial stage of sintering process, the densification rate of specimen was accelerated with rapid grain growth caused by the abnormal grain growth. But with the increase of sintering time, abnormally grown grain met each other and the density of specimen decreased drastically due to coalescence of pores located in triple junction. On the contrary, BaTiO3 powder calcined at 135$0^{\circ}C$ showed normal grain growth behavior and gradually densified with the increase of sintering time.

• 한국기계가공학회지
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• 제11권5호
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• pp.13-20
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• 2012

In order to clarify the effect of overload on crack growth behaviors, fatigue tests for overload were carried out for round plain specimens of SM45C steel. In the experiment, typical semi-elliptical crack shape was found and further crack growth behaviors were tested. Using three types of single overload fatigue tests, Crack growth retardation phenomenon were examined. The growth rate of surface crack(da/dN) during retardation period was analyzed in terms of ${\Delta}K$ and ${\Delta}K_{eff}$. On the growth rate of surface crack analyzed by ${\Delta}K$, the dependence of overload stress levels appears. However, on the growth rate by ${\Delta}K_{eff}$ obtained by Willenborg analysis, there is a non-liner relationship between da/dN and ${\Delta}K_{eff}$ with narrow scatter band.

• Journal of Mechanical Science and Technology
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• 제14권10호
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• pp.1041-1050
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• 2000

In this paper the effect of specimen thickness on fatigue crack growth with the spatial distribution of material properties is presented. Basically, the material resistance to fatigue crack growth is treated as a spatial stochastic process, which varies randomly on the crack surface. The theoretical autocorrelation functions of fatigue crack growth resistance with specimen thickness are discussed for several correlation lengths. Constant ${\Delta}K$ fatigue crack growth tests were also performed on CT type specimens with three different thicknesses of BS 4360 steel. Applying the proposed stochastic model and statistical analysis procedure, the experimental data were analyzed for different specimen thicknesses for determining the autocorrelation functions and probability distributions of the fatigue crack growth resistance.

• 한국결정성장학회지
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• 제10권1호
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• pp.13-16
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• 2000

Progress in Si crystal and wafer technologies is discussed on single crystal growth, wafer fabrication, epitaxial growth, gettering, 300 mm and SOI. As for bulk crystal growth, the mechanism of grown-in defects (voids) formation, the succes of grown-in defect free crystal growth technology and nitrogen doped crystal are shown. New wafer fabrication technologies such as both-side mirror polishing and etchingless process have been developed. The epitaxial growth of SiGe/Si heterostructure for high speed bipolar device is treated. Gettering technology under low temperature process such as RTP is important, and also it is shown that IG effect for Ni could be predicted using computer simulation of precipitate density and size. The development of 300 mm wafer and SOI has made progress steadily.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2005년도 추계학술대회 논문집
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• pp.258-263
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• 2005

The purpose of this research is to present a practical method for efficiently monitoring a reliability growth process using AMSAA(Army Materiel Systems Analysis Activity) reliability growth model. The presented method is viable for identifying failure modes, incorporating design changes and monitoring reliability progress on an on-going basis during the early stages of a product development program. According to the Application Guide for EN 50126(RAM part for Rolling Stock), reliability growth monitoring is essential part of the main tasks of design phase in RAM growth monitoring. Implementation of reliability growth management program will provide very useful information on concept selection, product/process reliability, and cost effectiveness without too much time, money and engineering effort being spent on the development of failure suspect parts.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.480.1-480.1
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• 2014

In this study, we suggest the new emitter formation applied solid phase epitaxy (SPE) growth process using rapid thermal process (RTP). Preferentially, we describe the SPE growth of intrinsic a-Si thin film through RTP heat treatment by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Phase transition of intrinsic a-Si thin films were taken place under $600^{\circ}C$ for 5 min annealing condition measured by spectroscopic ellipsometer (SE) applied to effective medium approximation (EMA). We confirmed the SPE growth using high resolution transmission electron microscope (HR-TEM) analysis. Similarly, phase transition of P doped a-Si thin films were arisen $700^{\circ}C$ for 1 min, however, crystallinity is lower than intrinsic a-Si thin films. It is referable to the interference of the dopant. Based on this, we fabricated 16.7% solar cell to apply emitter layer formed SPE growth of P doped a-Si thin films using RTP. We considered that is a relative short process time compare to make the phosphorus emitter such as diffusion using furnace. Also, it is causing process simplification that can be omitted phosphorus silicate glass (PSG) removal and edge isolation process.

• 한국표면공학회지
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• 제52권1호
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• pp.6-15
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• 2019

Metal-halide perovskite (MHP) solar cell is a promising candidate for next-generation flexible devices and the BIPV (Building-integrated photovoltaics) because it can exhibit high power conversion efficiencies over 23%, good bendability and low processing cost. However, MHP solar cells are commonly fabricated by the spin coating that is not a reliable method to produce large-scale commercial solar cells. A shear coating can be one of the potential candidates for the large-scale deposition method of MHP films. In this work, the influences of the process parameters such as solvents of precursor solution, substrate temperature, concentrations of precursor solution, and annealing time on the thin film growth of MHP were investigated for the shear coating process. This study presents the possibility of the shear coating process for large-scaled perovskite film fabrication and reveals the role of process condition in the thin film growth of perovskites.

• 한국분말재료학회지
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• 제5권4호
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• pp.324-328
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• 1998

This paper is aimed to study the computer simulation of sintering process for ceramics by Monte Carlo and molecular dynamics methods. Plural mechanisms of mass transfer were designed in the MC simulation of sintering process for micron size particles; the transfer of pore lattices for shrinkage and the transfer of solid lattices for grain growth ran in the calculation arrays. The MD simulation was performed in the case of nano size particles of ionic ceramics and showed the characteristic features in sintering process at atomic levels. The MC and MD simulations for sintering process are useful for microstructural design for ceramics.

• Bulletin of the Korean Chemical Society
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• 제32권12호
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• pp.4371-4376
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• 2011

In this work, we investigate the growth behavior of silicon oxide nanowires via a solid-liquid-solid process. Silicon oxide nanowires were synthesized at $1000^{\circ}C$ in an Ar and $H_2$ mixed gas. A pre-oxidized silicon wafer and a nickel film are used as the substrate and catalyst, respectively. We propose two distinctive growth modes for the silicon oxide nanowires that both act as a unique solid-liquid-solid growth process. We named the two growth mechanisms "grounded-growth" and "branched-growth" modes to characterize their unique solid-liquid-solid growth behavior. The two growth modes were classified by the generation site of the nanowires. The grounded-growth mode in which the grown nanowires are generated from the substrate and the branchedgrowth mode where the nanowires are grown from the side of the previously grown nanowires or at the metal catalyst drop attached at the tip of the nanowire stem.