• Progress in Superconductivity and Cryogenics
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• v.24 no.3
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• pp.52-56
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• 2022

Single-grain (c-normal or c-parallel) and multi-grain YBCO superconductors were prepared by a melt growth process with/without seeding. The magnetic levitation force and trapped magnetic field at liquid N₂ temperature (77 K) of the YBCO superconductors were investigated. Samples for the levitation force measurement were zero-field cooled (ZFC) to 77 K, and samples for trapped field measurement were field-cooled (FC) using Nd magnets. As for the magnetic levitation force, the c-normal, single grain sample showed the largest value, whereas the multi-grain sample showed the lowest value. The trapped magnetic field of the c-normal and c-parallel single-grain samples was 4-5 times that of the multi-grain sample. In addition, as the external magnetic field (the number of magnets) increased, the both properties increased proportionally. These results were explained in terms of the orientation dependence of the levitation forces and the magnetic field trapping capability of the YBCO superconductor.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.154-159
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• 1997

The crystal structure properties of TiN thin films deposited on SKD61 steel and Si(100) substrates by Ion Beam Assisted Deposition have been studied to clarify the thin film growth mechanism by using XRD, RBS, SEM, and AFM. The preferred orientation of TiN thin films changes from (111) to (100) as increasing the assisted energy. This tendency is independent of the substrate structure. The TiN thin film grow with (100) direction having surface free energy minimum as the assisted energy increases.

• Journal of Surface Science and Engineering
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• v.36 no.2
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• pp.135-140
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• 2003

The difference in lattice parameter and thermal expansion coefficient between GaN and Si which results in many defects into the grown GaN is larger than that between GaN and sapphire. In order to obtain high quality GaN films on Si substrate, it is essential to understand growth characteristics of GaN. In this study, GaN layers were grown on Si(111) substrates by MOCVD at three different GaN growth temperatures ($900^{\circ}C$, $1,000^{\circ}C$ and $1,100^{\circ}C$), using AlN and LT-GaN buffer layers. Using TEM, we carried out the comparative investigation of growth characteristics of GaN by characterizing lattice coherency, crystallinity, orientation relationship and defects formed (transition region, stacking fault, dislocation, etc). The localized region with high defect density was formed due to the lattice mismatch between AlN buffer layer and GaN. As the growth temperature of GaN increases, the defect density and surface roughness of GaN are decreased. In the case of GaN grown at $1,100^{\circ}$, growth thickness is decreased, and columns with out-plane misorientation are formed.

• Korean Journal of Materials Research
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• v.21 no.4
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• pp.232-235
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• 2011

ZnO nanorods for gas sensors were prepared by a hydrothermal method. The ZnO gas sensors were fabricated on alumina substrates by a screen printing method. The gas-sensing properties of the ZnO nanorods were investigated for $CH_4$ gas. The effects of growth time on the structural and morphological properties of the ZnO nanorods were investigated by X-ray diffraction and scanning electron microscope. The XRD patterns of the nanocrystallized ZnO nanorods showed a wurtzite structure with the (002) predominant orientation. The diameter and length of the ZnO nanorods increased in proportion to the growth time. The sensitivity of the ZnO sensors to 5 ppm $CH_4$ gas was investigated for various growth times. The ZnO sensors exhibited good sensitivity and rapid response-recovery characteristics to $CH_4$ gas, and both traits were dependent on the growth time. The highest sensitivity of the ZnO sensors to $CH_4$ gas was observed with the growth time of 7 h. The response and recovery times were 13 s and 6 s, respectively.

• Korean Journal of Crystallography
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• v.6 no.1
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• pp.14-26
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• 1995

The growth mechanism of diamond thin films, deposited by Hot Filament CVD, was investigated through observation of changes in their surface morphology as a function of the substance temperature and deposition time. Amorphous carbon or DLC thin films were deposited at low substrate temperature. Diamond films consisting of square-shaped particles, whose surfaces are (100) planes, were deposited at an intermedate temperature. At high substrate temperatures, diamond films consisting of the particles showing both (100) and (111) plane were deposited. The (100) proferred orientation of the diamond films are believed to be due to a relatively high supersaturation during deposition, and the growth condition for the diamond films having (100) preferred orientation can be applied to the single crystal growth since no twins are generated on the (100) plane. The grain size of the diamond films did not change with increasing temperature and its increasing rate with increasing deposition time was the same irrespective of the substrate temperature. However, the nucleation density increased with substrate temperature and its increasing rate with deposition time was much higher for the films deposited at higher substrate temperature.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.4
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• pp.319-326
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• 2008

In this study, we investigate the deformation behavior of F.C.C. single crystals containing micro- or submicron-sized voids by using three dimensional finite element methods. The locally homogeneous constitutive model for the rate-dependent crystal plasticity is integrated based on the backward Euler method and implemented into a finite element program (ABAQUS) by means of user-defined subroutine (UMAT). The unit cell analysis has been investigated to study the effect of stress triaxiality and crystallographic orientations on the growth and coalescence of voids in F.C.C. single crystals.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2003.10a
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• pp.281-284
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• 2003

The microstructural changes of Al-Zn-Mg-Cu alloy containing Sc during hot extrusion and post heat treatment is investigated. Two kinds of Al-Sc alloys with different alloying elements (B1, B2) are hot extruded to make I-shape bars at 380$^{\circ}C$, then the bars are solution treated at 480$^{\circ}C$ for 2hrs followed by artificial aging at 120$^{\circ}C$ for 24hrs. The interior microstructure of as extruded bar consists of elongated grains, however, fine equiaxed grains are mainly observed around surface. The microstructural gradient suggests that different restoration process can proceed during the hot extrusion. For B1 and B2, different grain growth behaviors are found around the surface during the post heat treatment. Rapid grain growth behavior around the surface is discussed related with the crystallographic orientation of the grain.

• 연구논문집
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• s.23
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• pp.15-27
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• 1993

The single crystal specimens were solidified by modified Bridgeman method. The surface recrystallized single crystal specimens were prepared by shot peening followed by heat treatment. The surface recrystallization begins at the dendrite cores on the surface. The recrystallized grains grew into the inner side of the specimen. The growth of recrystallized grains was inhibited by the pores and eutectic phases. The primary $\gamma'$ phases were dissolved at the recrystallized grain boundaries during the grain growth. The grain growth of recrystallized grains was similar to the cellular type transformation. No orientation relationships were found bewteen the recrystallized grains and the parent phase.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.7-10
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• 1998

L-Histidine tetrafluoroborate single crystals have been grown from the aqueous solution. The profitable pH value to grow large crystals, the relative flow rate to get clear crystals, crystals habit and the orientation of the obtained crystal have been clarified. We have also demonstrated that the LHBF crystal has very high damage threshold which is potentially good for generation of the phase conjugated waves.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1003-1007
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• 2005

We demonstrate color video displays driven by carbon nanotube electron field emitters. These nanotubes are incorporated into the device by selective growth using low temperature chemical vapor deposition. The device structure is simple and inexpensive to fabricate, and a 45 V switching voltage enables the use of low cost driver electronics. The prototype units are sealed 4.6” diagonal displays with 726 um pixels. They represent a piece of a 42” diagonal 1280x720 high definition television. The carbon nanotube growth process is performed as the last processing step and creates nanotubes ready for field emission. No activation post-processing steps are required, so chemical and particulate contamination is not introduced. Control of the nanotube dimension, orientation, and spatial distribution during growth enables uniform, highquality, color video performance.