• International Journal of Precision Engineering and Manufacturing
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• v.5 no.1
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• pp.19-26
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• 2004

The growth of solid particles in TiC-XC-2vo1.% and TiC-XC-30vo1.% Ni alloys, (where X=Zr, W or Mo) was fitted to the equation of the form $d^3$-${do}^3$=Kt during the liquid phase sintering at 1,673K. Also, the grain growth behavior decreased markedly with the addition of ${MO}_2$C or WC and increased with the addition of zrC. The contiguity was greater in the alloys with a smaller growth rate constant and especially, decreased by increasing the Ni content in the TiC-${MO}_2$C-Ni alloy. In addition, the effect of the addition of carbide on the grain growth of 2 vo1.% Ni alloys was found to be similar to that of 30vo1.% Ni alloys. Consequently, the grain growth mechanism cannot be explained by the usual solution / reprecipitation process, but can be explained in terms of a new growth velocity equation, which includes the effects of contiguous carbide grain boundaries in restricting the overall grain growth, as well as the area of the solid / liquid interface in the alloy.

• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1329-1336
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• 1998

A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

• Advances in nano research
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• v.5 no.4
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• pp.303-311
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• 2017

The continuum elasticity model is applied to investigate quantitatively the growth features and nucleation mechanism of quantum dots, nanopits, and joint QDs-nanopits structures in GaInAlN quasyternary systems. We have shown that for GaInAlN material system at the critical strain of ${\varepsilon}^*=0.039$ the sign of critical energy and volume is changed. We assume that at ${\varepsilon}={\varepsilon}^*$ the mechanism of the nucleation is changed from the growth of quantum dots to the nucleation of nanopits. Obviously, at small misfit (${\varepsilon}$ < ${\varepsilon}^*$), the bulk nucleation mechanism dominates. However, at ${\varepsilon}$ > ${\varepsilon}^*$, when the energy barrier becomes negative as well as a larger misfit provides a low-barrier path for the formation of dislocations, the nucleation of pits becomes energetically preferable. The free energy of mixing for $Ga_{1-x-y}In_xAl_yN$ quasiternary system was calculated and studied and its 3D sketch was plotted.

• Bulletin of the Korean Chemical Society
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• v.26 no.9
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• pp.1354-1358
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• 2005

Nano- and microstructured indium nitride crystals were synthesized by the reaction of indium oxide ($In_2O_3$) powder and its pellet with ammonia in the temperature range 580-700 ${^{\circ}C}$. The degree of nitridation of $In_2O_3$ to InN was very sensitive to the nitridation temperature. The formation of zero- to three-dimensional structured InN crystals demonstrated that $In_2O_3$ is nitridated to InN via two dominant parallel routes (solid ($In_2O_3$)-to-solid (InN) and gas ($In_2O$)-to-solid (InN)). The growth of InN crystals with such various morphologies was explained by the vapor-solid (VS) mechanism where the degree of supersaturation of In vapor determines the growth morphology and the vapor was mainly by the reaction of $In_2O$ with ammonia and partially by sublimation of solid InN. The pellet method was proven to be useful to obtain homogeneous InN nanowires.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.579-579
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• 2012

Graphene has recently been a subject of much interest as a potential platform for future nanodevices such as flexible thin-film transistors, touch panels, and solar cells. And chemical vapor deposition (CVD) and related surface segregation techniques are a potentially scalable approach to synthesizing graphite films on a variety of metal substrates. The structural properties of such films have been studied by a number of methods, including Raman scattering, x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and transmission electron microscopy (TEM). An understanding of the structural quality and thickness of the graphite films is of paramount importance both in improving growth procedures and understanding the resulting films' electronic properties. In this study, we synthesized the few-layered grapheneunder optimized condition to figure out the growth mechanism seen in CVD-grown graphenee by using various electron microscope. Especially, we observed directly film thickness, quality, nucleation site, and uniformity of grpahene by using AEM. The details will be discussed in my presentation.

• Journal of Plant Biotechnology
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• v.43 no.4
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• pp.405-410
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• 2016

Auxins are essential in plant growth and development. The auxin-stimulated elongation of plant cells has been explained by the "acid-growth theory", which was proposed forty years ago. According to this theory, the auxin activates plasma membrane $H^+-ATPase$ to induce proton extrusion into the apoplast, promoting cell expansion through the activation of cell wall-loosening proteins such as expansins. Even though accepted as the classical theory of auxin-induced cell growth for decades, the major signaling components comprising this model were unknown, until publication of recent reports. The major gap in the acid growth theory is the signaling mechanism by which auxin activates the plasma membrane $H^+-ATPase$. Recent genetic, molecular, and biochemical approaches reveal that several auxin-related molecules, such as TIR1/AFB AUX/IAA coreceptors and SMALL AUXIN UP RNA (SAUR), serve as important components of the acid-growth model, phosphorylating and subsequently activating the plasma membrane $H^+-ATPase$. These researches reestablish the four-decade-old theory by providing us the detailed signaling mechanism of auxininduced cell growth. In this review, we discuss the recent research progress in auxin-induced cell elongation, and a set of possible future works based on the reestablished acid-growth model.

• Korean Journal of Materials Research
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• v.13 no.10
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• pp.677-682
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• 2003

SiC nanowires were synthesized by carbothermal reduction using metal catalysts. Synthesized nanowires had mean diameters of 30∼50 nm and several $\mu\textrm{m}$ length. The kind of catalysts affects form of SiC nanowire because of difference of growth mechanisms. These differences were made by catalyst's physical property and relative activities to the source gas. Ni acted a conventional catalyst of VLS growth mechanism. But, Case of Fe, SiC nanowire was grown by stable VLS growth mechanism without relation of growth conditions. SiC nanowire was grown by two step growth model using Cr catalyst. Conversion ratios to the SiC nanowire were increased with growth conditions. Case of Cr, conversion ratio was about 45% that was higher than other catalyst used. This high conversion ratio was obtained by the addition VS growth to radial direction on the as-grown nanowires.

• The Journal of Asian Finance, Economics and Business
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• v.8 no.5
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• pp.29-35
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• 2021

This study discusses the effect of human capital and technology on economic growth in Indonesia using annual time series data over the 35-year research period (1984-2019). This study uses an autoregressive distribution gap to the cointegration approach to understanding the relationship between human capital, technology, and economic growth. Human capital is inherent in humans and becomes capital in providing the best performance that has an impact on their own income. We use the human capital framework in this study where education is one mechanism to increase human capital. Based on the results of our estimation, we find that the increase in human capital using the education mechanism affects economic growth. This shows the role of human capital investment is very important in economic growth. Technology shows a significant positive effect on economic growth. Increasing human resources and technology are important factors in efforts to increase economic growth in Indonesia. Educational development is the key to the success of increasing human capital and technological development because education plays a role in improving the quality of human resources. Increasing human resources here is in the form of increased knowledge, mastery of technology, innovation, and the ability to develop technology to encourage technology development.

• Toxicological Research
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• v.29 no.4
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• pp.241-247
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• 2013

This study was carried out to examine the action mechanism of Chamaecyparis obtusa oil (CO) on hair growth in C57BL/6 mice. For alkaline phosphatase (ALP) and ${\gamma}$-glutamyl transpeptidase (${\gamma}$-GT) activities in the skin tissue, at week 4, the 3% minoxidil (MXD) and 3% CO treatment groups showed an ALP activity that was significantly higher by 85% (p < 0.001) and 48% (p < 0.05) and an ${\gamma}$-GT activity that was significantly higher by 294% (p < 0.01) and 254% (p < 0.05) respectively, as compared to the saline (SA) treatment group. For insulin-like growth factor-1 (IGF-1) mRNA expression in the skin tissue, at week 4, the MXD and CO groups showed a significantly higher expression by 204% (p < 0.05) and 426% (p < 0.01) respectively, as compared to the SA group. At week 4, vascular endothelial growth factor (VEGF) expression in the MXD and CO groups showed a significantly higher expression by 74% and 96% (p < 0.05) respectively, however, epidermal growth factor (EGF) expression in the MXD and CO groups showed a significantly lower expression by 66% and 61% (p < 0.05) respectively, as compared to the SA group. Stem cell factor (SCF) expression in the MXD and CO groups was observed by immunohis-tochemistry as significant in a part of the bulge around the hair follicle and in a part of the basal layer of the epidermis. Taking all the results together, on the basis of effects on ALP and ${\gamma}$-GT activity, and the expression of IGF-1, VEGF and SCF, which are related to the promotion of hair growth, it can be concluded that CO induced a proliferation and division of hair follicle cells and maintained the anagen phase. Because EGF expression was decreased significantly, CO could delay the transition to the catagen phase.

• 한국약용작물학회:학술대회논문집
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• 2010.10a
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• pp.330-331
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• 2010