• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.575-579
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• 2010

The technologies of Ni/Cu plating contact is attributed to the reduced series resistance caused by a better contact conductivity of Ni with Si and the subsequent electroplating of Cu on Ni. The ability to pattern narrower grid lines for reduced light shading was combined with the lower resistance of a metal silicide contact and an improved conductivity of the plated deposit. This improves the FF (fill factor) as the series resistance is reduced. This is very much requried in the case of low concentrator solar cells in which the series resistance is one of the important and dominant parameter that affect the cell performance. A Selective emitter structure with highly dopeds regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing In this paper the formation of a selective emitter, and the nickel silicide seed layer at the front side metallization of silicon cells is considered. After generating the nickel seed layer the contacts were thickened by Cu LIP (light induced plating) and by the formation of a plated Ni/Cu two step metallization on front contacts. In fabricating a Ni/Cu plating metallization cell with a selective emitter structure it has been shown that the cell efficiency can be increased by at least 0.2%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.10
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• pp.754-759
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• 2013

Aluminum oxide($Al_2O_3$) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surfaces. Since $Al_2O_3$ has fixed negative charge, it forms effective surface passivation by field effect passivation on the rear side in p-type silicon solar cell. However, $Al_2O_3$ layer formed by ALD process needs very long process time, which is not applicable in mass production of silicon solar cells. In this paper, plasma-assisted ALD(PA-ALD) was applied to form $Al_2O_3$ to reduce the process time. $Al_2O_3$ synthesized by ALD on c-Si (100) wafers contains a very thin interfacial $SiO_2$ layer, which was confirmed by FTIR and TEM. To improve passivation quality of $Al_2O_3$ layer, the deposition temperature was changed in range of $150{\sim}350^{\circ}C$, then the annealing temperature and time were varied. As a result, the silicon wafer with aluminum oxide film formed in $250^{\circ}C$, $400^{\circ}C$ and 10 min for the deposition temperature, the annealing temperature and time, respectively, showed the best lifetime of 1.6ms. We also observed blistering with nanometer size during firing of $Al_2O_3$ deposited on p-type silicon.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.4
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• pp.129-139
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• 2010

This paper presents a basic energy performance data of microturbine, renewable Energy(BIPV and Solar Collector System) and a hybrid energy system(geothermal system and microturbine) installed in hospital building. The efficiency of solar collector and BIPV system was 30[%], 10[%] individually, and lower than micro turbines. Finally, in energy performance aspect, microturbine and geothermal source heat pump system were a high-efficiency system in hospital building. It is confirmed hybrid energy systems also show the most powerful alternative energy system for green hospital building from the simulation results.

• Journal of Energy Engineering
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• v.19 no.1
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• pp.51-56
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• 2010

Due to increase in oil price unstableness and earth warming, energy saving has been one of the most important global issues. We report a 6 sigma project that was carried out to save electrical energy in a university campus. DMAIC, the five-phase process of 6 sigma, was applied for the energy saving campaign. This paper proposes a simple method to quantify the sigma level of the electrical energy saving status and various activities to change the consciousness of all the university members. Results were very satisfied. The 6 sigma project saved about 10% of the total electrical consumption. This is approximately 50 million won a year. The success of the 6 sigma project served as a momentum to promote "Green Scholarship" that has become the center of public interest. Also, we have valuable experiences in the 6 sigma training that shows the university campus can be successfully used as a good place for the actual 6 sigma training.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.241-241
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• 2010

Recently high and persistent spontaneous buildup of a surface potential (SP) upon vacuum deposition of tris (8-hydroxyquinolinato) aluminum (III) ($Alq_3$), which is widely used for organic light emitting devices. The removal of the giant surface potential by visible light irradiation has also been reported. In this study, we coated $Alq_3$ on the FTO substrate and raise the capacity for absorbing sun light. The $Alq_3$ which is green light emitting diode emits light at wavelengths between 500 and 550nm. If we apply one's FTO/$Alq_3$ substrate in one's DSSC, we could get higher energy conversion efficiency because the N719 dye that we used for fabricating the DSSC emits light just at near 540nm. The energy conversion efficiency of approximately 4.8 % at the condition of irradiation of AM 1.5 (100 mW/$cm^2$) simulated sunlight, and the $J_{sc}$ is 12.0 mA/$cm^2$, $V_{oc}$ is 0.71 V, FF is 0.56, respectively.

• Journal of Sensor Science and Technology
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• v.28 no.4
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• pp.236-239
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• 2019

In this work, we performed an optical simulation study on the performance of a PMDPP3T:PCBM based on an organic photovoltaic (PV) device. The virtual PV device was developed in Lumerical, finite-difference time-domain (FDTD) solutions. Different layers of the PV cell have been defined through the incorporation of complex refractive index value of those layers' constituent materials. During the simulation study, the effect of the variation active layer thickness on an ideal short circuit current density ($J_{sc,ideal}$) of the PV cell has been, first, observed. Thereafter, we have investigated the impact of surface roughness of a transparent conducting oxide (TCO) electrode on $J_{sc,ideal}$ of the PV cells. From this simulation, it has been observed that the $J_{sc,ideal}$ value of the PV cell is strongly dependent on the thickness of its active layer and the photon absorption of the PV cell has gradually decreased with the increment of the TCO's surface roughness. As a result, the capability of the PV device has been reduced with the increment of the surface roughness of the TCO.

• Composites Research
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• v.37 no.4
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• pp.286-290
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• 2024

The rapid increase in the demand for energy has put huge pressure on fossil fuels. The continuous overutilization of these existing non-renewable energy sources has been causing severe environmental concerns. In these regards, electrochemical water splitting has gained huge attention for producing green hydrogen, a superior energy source with high gravimetric energy density (120 MJ/kg), as compared with conventional options. Electrochemical water splitting is a viable option for generating green hydrogen. However, the various limitations of state-of the art Pt/C and RuO₂- based electrocatalysts has motivated the scientific community to develop novel cathode (hydrogen evolution reaction (HER)) and anode (oxygen evolution reaction (OER)) electrocatalysts. In our present study, we have achieved a new milestone by fabricating the NiMo-based transition metal LDHs coupled V₂C MXene support based heterocatalyst. The synergistic impact of NiMo LDHs (corrosion resistance, favorable intrinsic catalytic properties, etc.) and V₂C (high electrical conductivity, pseudocapacitive behavior, etc.) has resulted in the HER and OER at smaller overpotential of 135 and 370 mV at the current density of 10 and 30 mA cm-2 in an alkaline (1.0 M KOH) environment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.971-975
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• 2006

[ $SrTiO_3:Al,Pr$ ] red phosphors doped with Y and Er were synthesized by solid state reaction method. The luminescence properties of $SrTiO_3:Al,Pr$ phosphors before and after doping were examined by photoluminescence. Efforts were paid to elucidate the cause of the increase of green luminescence in $(Sr_{0.95}Y_{0.05})TiO_3:Pr,Er\;and\;(Sr_{0.95}Y_{0.05})TiO_3:Pr,Al$ phosphors. The enhanced green luminescence was interpreted by the energy transfer between $Er^{3+}\;and\;Pr^{3+}$ ions, and the change of bandgap in the $(Sr_{0.95}Y_{0.05})TiO_3:Pr$ phosphors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.968-971
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• 2003

Due to a low efficiency of phosphor with large Stoke shift in Vacuum Ultra Violet (VUV) excitation environment, new PDP phosphors which can be excited in UV excitation environment need to be developed. In this study, $Zn_2SiO_4:Tb$ phosphor was synthesized by solid-state reaction method at $1300^{\circ}C$ with varying Tb concentration, and its cross relaxation effect was observed by Photoluminescence (PL) measurement. In order to decrease $^5D_3{\to}7F_j$ transition with blue emission in $Zn_2SiO_4:Tb$ phosphor, Dy, co-activator element, was added to $Zn_2SiO_4:Tb$ phosphor. In 254nm excitation environment, broad-emission peak was observed around 524nm, green emission.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.995-999
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• 2008

ZnO nanowires with tetrapod shape were formed on the surface of the sample by direct melt oxidation of Al-Zn alloy at $1000^{\circ}C$ in air. X-ray diffraction (XRD) pattern revealed that the ZnO nanowires had wurtzite structure of hexagonal phase. Any other element except Zn and O was not detected in energy dispersive X-ray spectrum. The c- and a-axis lattice constants estimated from the XRD pattern were 0.520 and 0.325 nm, respectively. These are in well accordance with those of bulk ZnO single crystal, indicating high quality crystallinity. The green light emission at a wavelength of 510 nm was observed from the nanowires at room temperature, which was ascribed to high density of oxygen vacancies in nanowires.