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http://dx.doi.org/10.4313/JKEM.2008.21.11.995

Fabrication of ZnO Nanowires by Direct Melt Oxidation of Al-Zn Alloy  

Lee, Geun-Hyoung (동의대학교 나노공학과)
Kim, Il-Soo (동의대학교 나노공학과)
Shin, Byoung-Chul (동의대학교 나노공학과)
Lee, Won-Jae (동의대학교 나노공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.11, 2008 , pp. 995-999 More about this Journal
Abstract
ZnO nanowires with tetrapod shape were formed on the surface of the sample by direct melt oxidation of Al-Zn alloy at $1000^{\circ}C$ in air. X-ray diffraction (XRD) pattern revealed that the ZnO nanowires had wurtzite structure of hexagonal phase. Any other element except Zn and O was not detected in energy dispersive X-ray spectrum. The c- and a-axis lattice constants estimated from the XRD pattern were 0.520 and 0.325 nm, respectively. These are in well accordance with those of bulk ZnO single crystal, indicating high quality crystallinity. The green light emission at a wavelength of 510 nm was observed from the nanowires at room temperature, which was ascribed to high density of oxygen vacancies in nanowires.
Keywords
Direct melt oxidation; Al-Zn alloy; ZnO nanowires; Green emission;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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