• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.60-60
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• 2015

Nanosheets of graphene and related 2D materials have attracted much attention due to excellent physical, chemical and mechanical properties. Single-layer graphene (SLG) was first synthesized by Blakely et al in 1974 [1]. Following his achievements, we initiated the growth and characterization of graphene and h-BN on metal substrates using surface segregation and precipitation in 1980s [2,3]. There are three important steps for nanosheet growth; surface segregation of dopants, surface reaction for monolayer phase, and subsequent 3-D growth (surface precipitation). Surface phase transition was clearly demonstrated on C-doped Ni(111) by in situ XPS at elevated temperatures [4]. The growth mode was clarified by inelastic background analysis [5]. The surface segregation approach has been applied to C-doped Pt(111) and Pd(111), and controllable growth of SLG has been demonstrated successfully [6]. Recently we proposed a promising method for producing SLG fully covering an entire substrate using Ni films deposited on graphite substrates [7]. A universal method for layer counting has been proposed [8]. In this paper, we will focus on the effect of competitive surface-site occupation between carbon and other surface-active impurities on the graphene growth. It is known that S is a typical impurity of metals and the most surface-active element. The surface sites shall be occupied by S through surface segregation. In the case of Ni(110), it is confirmed by AES and STM that the available surface sites is nearly occupied by S with a centered $2{\times}2$ arrangement. When Ni(110) is doped with C, surface segregation of C may be interfered by surface active elements like S. In this case, nanoscopic characterization has discovered a preferred directional growth of SLG, exhibiting a square-like shape (Fig. 1). Also the detailed characterization methodologies for graphene and h-BN nanosheets, including AFM, STM, KPFM, AES, HIM and XPS shall be discussed.

• Proceedings of the IEEK Conference
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• 2001.10a
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• pp.633-637
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• 2001

Oil fly ash is known as one source of raw materials from which vanadium and nickel metals can be recovered. The current recovery process of valuable metals from oil fly ash is mainly the hydrormetallurgy one. Nevertheless, a great amount about 50~80%, of unburned carbon remains as byproduct after hydrormetallursy process. In Taiwan, if hydrormetallursy processes have proceeded, it can be estimated that the annual production of unburned carbon is 25 thousand tons. From the viewpoint of resource recycling, this study is a preliminary study and investigates in recovery of sub micron- graphitized carbon from unburned carbon by a designed process. The designed process included the following steps: 1.selecting a portion with +400mesh size from unburned carbon; 2.treating the selected in ultrasonic waves; 3.using a 400mesh sieve to obtain the product which is under 400mesh; 4.Removal ash from the product. In regard to treatment by ultrasonic waves in the designed process, treating time of ultrasonic waves is a simple and only variance in this study. The results indicate that the production yields increase with the treating time of ultrasonic waves; the production yield in specific conditions of this study can reach about 23%, in which ash content in product is about 2.5%. According to results of SEM, TEM and XRD, the products from the designed process are flakes in shape, several microns in size and graphitized carbon in carbon crystal phase. Except to graphitized carbon, there are a little carbon blacks, which are graphite 2H in carbon crystal phase in the products. Conclusively, the designed process is possibly applicable, by which comes to the recovery of micron- graphitized carbon.

• Journal of computational fluids engineering
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• v.18 no.3
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• pp.67-71
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• 2013

Recently, the rapid development of the semiconductor industry induces the prompt technical progress in the area of device integration and the application of large diameter wafers for the price competitiveness. As a result of the usage of large wafers in the semiconductor industry, the silicon carbide components which have layers of silicon carbide on graphite or RBSC substrates is getting widely used due to the advantages of SiC such as high hardness and strength, chemical and ionic resistant to all the environments superior than other ceramic materials. For the uniform and homogeneous deposition of silicon carbide on these huge components, it needs to know about the gas flow in the CVD reactor, not only for the delicate adjustment of the process variables but more essentially for the cost reduction for the shape change of specimens and their holders on the stage of reactor. In this research, the CFD simulation is challenged for the prediction of the inner distribution of the gas velocity. Chemical reaction simulation is used to predict the distribution of concentration of the reacting gas with the rotating velocity of the stage. With the increase of the rotating speed, more uniform distribution of the reacting gas on the surface of the stage was obtained.

• Journal of Korea Foundry Society
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• v.33 no.2
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• pp.69-74
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• 2013

Silicon (Si) wafer was grown by using direct growth from Si melt and contaminations of wafer during the process were investigated. In our process, BN was coated inside of all graphite parts including crucible in system to prevent carbon contamination. In addition, coated BN layer enhance the wettability, which ensures the favorable shape of grown wafer by proper flow of Si melt in casting mold. As a result, polycrystalline silicon wafer with dimension of $156{\times}156$ mm and thickness of $300{\pm}20$ um was successively obtained. There were, however, severe contaminations such as BN and SiC on surface of the as-grown wafer. While BN powders were easily removed by brushing surface, SiC could not be eliminated. As a result of BN analysis, C source for SiC was from binder contained in BN slurry. Therefore, to eliminate those C sources, additional flushing process was carried out before Si was melted. By adding 3-times flushing processes, SiC was not detected on the surface of as-grown Si wafer. Polycrystalline Si wafer directly grown from Si melt in this study can be applied for the cost-effective Si solar cells.

• Korean Journal of Materials Research
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• v.30 no.11
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• pp.581-588
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• 2020

Reducing CO₂ into high value fuels and chemicals is considered a great challenge in the 21st century. Efficiently activating CO₂ will lead to an important way to utilize it as a resource. This article reviews the latest progress of g-C₃N₄ based catalysts for CO₂ reduction. The different synthetic methods of g-C₃N₄ are briefly discussed. Article mainly introduces methods of g-C₃N₄ shape control, element doping, and use of oxide compounds to modify g-C₃N₄. Modified g-C₃N₄ has more reactive sites, which can significantly reduce the probability of photogenerated electron hole recombination and improve the performance of photocatalytic CO₂ reduction. Considering the literature, the hydrothermal method is widely used because of its simple equipment and process and easy control of reaction conditions. It is foreseeable that hydrothermal technology will continue to innovate and usher in a new period of development. Finally, the prospect of a future reduction of CO₂ by g-C₃N₄-based catalysts is predicted.

• Korean Journal of Materials Research
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• v.31 no.5
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• pp.301-311
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• 2021

The conversion of all carbon preforms to dense SiC by liquid infiltration can become a low-cost and reliable method to form SiC-Si composites of complex shape and high density. Reactive sintered silicon carbide (RBSC) is prepared by covering Si powder on top of 0.5-5.0 wt% Y₂O₃-added carbon preforms at 1,450 and 1,500℃ for 2 hours; samples are analyzed to determine densification. Reactive sintering from the Y₂O₃-free carbon preform causes Si to be pushed to one side and cracking defects occur. However, when prepared from the Y₂O₃-added carbon preform, an SiC-Si composite in which Si is homogeneously distributed in the SiC matrix without cracking can be produced. Using the Si + C = SiC reaction, 3C and 6H of SiC, crystalline Si, and Y₂O₃ phases are detected by XRD analysis without the appearance of graphite. As the content of Y₂O₃ in the carbon preform increases, the prepared RBSC accelerates the SiC conversion reaction, increasing the density and decreasing the pores, resulting in densification. The dense RBSC obtained by reaction sintering at 1,500 ℃ for 2 hours from a carbon preform with 2.0 wt% Y₂O₃ added has 0.20 % apparent porosity and 96.9 % relative density.

• Journal of Conservation Science
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• v.26 no.3
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• pp.269-276
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• 2010

This study aims to extract manufacturing techniques by analysing metallurgical characteristics of the cast-iron pot from Bubjusa, examining corrosion status and microstructure with a optical microscope, SEM-EDS, micro vickers hardness tester and XRD. The microstructure analysis has presented that ferrite and partial portion of pearlite exist within the corroded outer layer. The analysis of the inner layer revealed that there is pearlite and graphite of feather shape. The one of the middle layer, which is placed between outer and inner layer, showed that corrosion has been heavily developed. Micro vickers hardness values range from 217Hv to 698Hv in constituent layers and such values lie within the ranges of the ancient iron relics. The result of EDS analysis for each microstructure presented that the outer layer has been more decarbonized than the inner layer. XRD analysis of iron corrosion compound revealed that Goethite and Hematite had been produced from the corrosive process of iron. The study concludes that the large iron pot was made by casting technique, and microstructure of inner layer had a gray cast iron. Outer layer has been decarbonized through repetitive process of heating and cooling. This results can be used as fundamental data for comparative study to reveal manufacturing techniques of large cast-iron pot.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2002.11a
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• pp.29-29
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• 2002

공구강 등 산업용 재료로 널리 사용되는 카바이드 계 재료는 입자 크기 및 분포에 따라 기계적 성질이 변화하므로, 이를 제어하고 조절하는 기술에 관하여 많은 연구가 진행되어 왔다. 본 연구에서는 TiCN-WC-Co 복합초경계 에서 소결 공정 및 조성변화에 따른 입자 모양을 관찰하고 이에 따른 업자 성장 거동을 고찰하였다. 일반적으로 입자 조대화 양상과 고상 입자의 모양과는 밀접한 관계가 있다. 각진 입자의 경우에 는 계면이 원자적으로 singular 하여 원자의 홉착이 어렵기 때문에 임계값 이상의 성장 구동력을 받 는 몇몇 입자만 성장하는 비정상 입자 성장이 일어날 수 있다. 반면에 계면이 rough한 퉁큰 엽자의 경우에는 원자 홉착에 필요한 구동력이 존재하지 않아 성장 구동력을 받는 모든 입자들이 성장하기 때문에 정상 입자 성장을 하게 된다. 이와 같이 입자 모양에 따른 입자 성장 거동은 전체 미세구조를 결정하게 되며, 이에 따른 물리 화학적 물성을 변화시킨다. 이러한 입자 성장 원리를 적용하 면 복합초경계 (TiCN-WC-Co)에서도 입자성장이 억제되고 치밀한 소결체를 제조할 수 있을 것이다. 본 실험에서는 평균입도가 각각 0.1, 1.33, 2$\mu\textrm{m}$인 TiCN, WC, Co 분말을 사용하여 $((I00_{-x)}TiCN+_xWC)-30Co$ (wt%) 조성에서 TiCN/WC 비를 변화시키면서 업자 모양과 입자성장 거동을 관찰하였다. 청량된 분말은 WC 초경 볼로 밀렁하고, 건조한 후, 100 mesh 체로 조립화 하였다. 이 분말을 100 MPa의 압력으로 냉간정수압성형 하고 $10^{-2}$ torr의 진공분위기의 graphite f furnace에서 carbon black으로 packing 하여 액상형성 온도 이상에서 소결하였다. 소결된 시편은 경면 연마하여 주사전자현미경으로 미세 조직을 관찰하였다. TiCN-30Co 조성 시편은 corner-round 모양의 입자 모양으로 소결 시간 증가에 따라 빠른 입자 성장을 나타내었다 .(7STiCN+2SWC)-30Co 조성 시변의 경우 일반적으로 보고된 바와 같이 core/shell 구조를 나타내었으며, core는 TiC-rich 상이었고, shell은 (Ti,W)(C,N) 복합 탄화물 상이었다. WC 함량이 중가함에 따라 입자의 corner-round 영역이 증가하였으며 (SOTiCN-SOWC)-30Co 조성 근처에서는 거의 둥근 형태의 입자 모양을 나타내었다. 또한 TiCN - 30Co 조성 시편에 비하여 WC가 첨가된 시펀들은 작은 평균입자크기를 나타내었다. 본 연구의 결과는 shell 영역 조성 변화는 계면에너지 이방성과 기지상 내의 펑형 입자 모양을 변화시키고 나아가 입자 성장 속도 에도 영향을 미친다는 것을 보여준다.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.30 no.2
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• pp.119-125
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• 2017

Ablative material in a rocket nozzle is exposed to high temperature combustion gas, thus undergoes complicated thermal/chemical change in terms of chemical destruction of surface and thermal decomposition of inner material. Therefore, method for conjugate analysis of thermal response inside carbon/phenolic material including rocket nozzle flow, surface chemical reaction and thermal decomposition is developed in this research. CFD is used to simulate flow field inside nozzle and conduction in the ablative material. A change in material density and a heat absorption caused by the thermal decomposition is considered in solid energy equation. And algebraic equation under boundary layer assumption is used to deduce reaction rate on the surface and resulting destruction of the surface. In order to test the developed method, small rocket nozzle is solved numerically. Although the ablation of nozzle throat is deduced to be higher than the experiment, shape change and temperature distribution inside material is well predicted. Error in temperature with experimental results in rapid heating region is found to be within 100 K.

• Clean Technology
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• v.22 no.4
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• pp.308-315
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• 2016

$SiO_x/ZnO$ composites were prepared from sol-gel method for excellent cycle life characteristics. The composites were coated by PVC as a carbon precursor. ZnO removal to create a void space therein was able to buffer the volume change during charge and discharge. To determine the crystal structure and the shape of the synthesized composite, XRD, SEM, TEM analysis was performed. The carbon contents in the composites were confirmed by TGA. The pore structure and pore size distribution of the composite was measured with the BET specific surface area analysis and BJH pore size distribution. Enhanced electric conductivity by carbon addition was determined from powder resistance measurement. Electrochemical properties were measured with the AC impedance and the charge and discharge cycle life characteristics. When carbon was coated on the $SiO_x/ZnO$ sample, the electrical conductivity and the discharge capacity were increased. After removal of ZnO with HCl the surface area of the sample was increased, but the discharge capacity was decreased. $SiO_x/ZnO$ sample without acarbon coating showed very low discharge capacity, and after carbon coating the sample showed high discharge capacity. For cycle life characteristics, $C-SiO_x/ZnO$ composite (Zn : Si : C = 1 : 1 : 8) with a capacity of $815mAh\;g^{-1}$ at 50 cycle and 0.2 C has higher capacity than existing graphite-based anode materials.