• 한국세라믹학회지
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• 제50권5호
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• pp.309-318
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• 2013

Graphene has attracted considerable attention since its first production from graphite in 2004, due to its outstanding physical and chemical properties. The development of production methodsfor large scale, high quality graphene films is an essentialstep toward realizing graphene applications such as transparent, conductive film. Chemical deposition methods, using metal catalystsand gaseous carbon sources, have been extensively developed for large area synthesis. In this paper, wereview recent progress ingraphene production, and survey the role of graphene electrodes in various electronic devices such as touch panels, solar cells, solid statelighting and microelectronic devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.14-14
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• 2011

Graphene is known to possess excellent thermal properties, including high thermal conductivity, that make it a prime candidate material for heat management in ultra large scale integrated circuits. For device applications, the key parameters are the thermal expansion coefficient and the thermal conductivity. There has been no reliable experimental determination on the thermal expansion coefficient of graphene whereas the estimates of the thermal conductivity vary widely. In this work, we estimate the thermal expansion coefficient of graphene on silicon dioxide by measuring the temperature dependence of the Raman spectrum. The shift of the Raman peaks due to heating or cooling results from both the intrinsic temperature dependence of the Raman spectrum of graphene and the strain on the graphene film due to the thermal expansion mismatch with silicon dioxide. By carefully comparing the experimental data against theoretical calculations, it is possible to determine the thermal expansion coefficient. The thermal conductivity is measured by estimating the thermal profile of a graphene film suspended over a circular hole of the substrate.

• 조명전기설비학회논문지
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• 제28권9호
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• pp.45-51
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• 2014

This work carried out for the effective synthesis characteristics of graphene nanowall film by controlling the electric field in a RF plasma CVD process. For that, the bipolar bias voltage was applied to the substrate such as Si and glass materials for the best chemical reaction of positive and negative charges existing in the plasma. For supplying the seed formation sites on substrate and removing the oxidation layer on the substrate surface, the electron bombardment into substrates was performed by a positive few voltage in hydrogen plasma. After that, hydrocarbon film, which is not a graphene nanowall, was deposited on substrates under a negative bias voltage with hydrogen and methane gases. At this step, the film on substrates could not easily identify due to its transparent characteristics. However, the transparent film was easily changed into graphene nanowall by the final hydrogen plasma treatment process. The resultant raman spectra shows the existence of significant large 2D peaks corresponding to the graphene.

• Bulletin of the Korean Chemical Society
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• 제35권4호
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• pp.1067-1072
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• 2014

In this study, we report a new approach for $Mn_3O_4$-graphene nanocomposite by ex situ method. This nanocomposite shows two-dimensional aggregation of nanoparticle, and doping effect by decorated manganese oxide ($Mn_3O_4$), as well. The graphene film was made through micromechanical cleavage of graphite on the $SiO_2/Si$ wafer. Manganese oxide ($Mn_3O_4$) nanoparticle with uniform cubic shape and size (about $5.47{\pm}0.61$ nm sized) was synthesized through the thermal decomposition of manganese(II) acetate, in the presence of oleic acid and oleylamine. The nanocomposite was obtained by self-assembly of nanoparticles on graphene film, using hydrophobic interaction. After heat treatment, the decorated nanoparticles have island structure, with one-layer thickness by two-dimensional aggregations of particles, to minimize the surface potential of each particle. The doping effect of $Mn_3O_4$ nanoparticle was investigated with Raman spectra. Given the upshift in positions of G and 2D in raman peaks, we suggest that $Mn_3O_4$ nanoparticles induce p-doping of graphene film.

• 공업화학
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• 제32권2호
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• pp.143-148
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• 2021

본 연구에서는 폴리이미드(polyimide; PI) 막(film)의 열전도도를 향상시켜 그 응용성을 확대하고자, 정전기 방전법을 이용하여 흑연봉으로부터 그래핀을 제조하고 제조된 그래핀을 첨가하여 폴리아믹산(polyamic acid; PAA) 전구체로부터 200 ㎛두께의 폴리이미드 기반 열전도 막을 제조하였다. 정전기 방전 기법으로 생산된 그래핀은 라만, XPS, TEM 등을 이용하여 물성을 평가하였다. 제조된 그래핀은 라만 스펙트럼 분석 결과 ID/IG 값이 0.138이며, XPS 분석 결과 C/O 비율이 24.91로 구조적, 표면화학적으로 우수한 물성을 나타내었다. 또한, 흑연 박리 그래핀의 첨가량에 따라 폴리이미드 막의 열전도도는 지수함수적으로 증가하였으며, 그래핀 함량을 40% 초과 시에는 폴리이미드 막을 제조할 수 없었다. 그래핀을 폴리아믹산 중량 대비40 wt% 첨가하여 제조된 폴리이미드 막의 열원반(hot disk) 열전도도는 51 W/mK를 나타내었으며, 순수한 폴리이미드 막의 열전도도(1.9 W/mK)보다 크게 향상되었다. 이 결과는 정전기 방전기법으로 제조된 박리 그래핀의 우수한 물성에 기인한 것으로 판단된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.157-157
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• 2011

Graphene has generated significant interest in the recent years as a functional material for electronics, sensing, and energy applications due to its unique electrical, optical, and mechanical properties. Much of the considerable interest in graphene stems from results obtained for samples mechanically exfoliated from graphite. Practical applications, however, require reliable and well-controlled methods for fabrication of large area graphene films. Recently high quality graphene layers were fabricated using chemical vapor deposition (CVD) on nickel and copper with methane as the source of the carbon atoms. Here, we report a simple and efficient method to synthesize graphene layers using solid carbon source. Few-layer graphene films are grown using filtered vacuum arc source (FVAS) technique by evaporation of carbon atom on Ni catalytic metal and subsequent annealing of the samples at 800$^{\circ}$C. In our system, carbon atoms diffuse into the Ni metal layer at elevated temperatures followed by their segregation as graphene on the free surface during the cooling down step as the solubility of carbon in the metal decrease. For a given annealing condition and cooling rate, the number of graphene layers is easily controlled by changing the thickness of the initially evaporated amorphous carbon film. Based on the Raman analysis, the quality of graphene is comparable to other synthesis methods found in the literature, such as CVD and chemical methods.

• Composites Research
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• 제29권4호
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• pp.151-155
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• 2016

그래핀은 저차원 구조에서 기인하는 우수한 특성으로 인해 슈퍼커패시터의 전극소재로 응용이 가능한 소재이다. 본 연구에서는 2차원 구조인 그래핀의 비 표면적 향상을 위해 다공성 니켈 나노구조체 표면에 열 화학기상증착법과 마이크로웨이브 플라즈마 화학기상증착법을 이용하여 3차원의 그래핀을 합성하였다. 주사전자현미경, 라만 분광법, X-선 광전자 분광법을 통해 합성된 그래핀의 구조적, 화학적 특성을 분석한 결과, 3차원 구조의 우수한 결정성을 지니는 다중층 그래핀이 다양한 기판 위에 합성된 것을 확인할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.232.2-232.2
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• 2014

Since its discovery in 2004, graphene, a sp2-hybridized 2-Dimension carbon material, has drawn enormous attention. A variety of approaches have been attempted, such as epitaxial growth from silicon carbide, chemical reduction of graphene oxide and CVD. Among these approaches, the CVD process takes great attention due to its guarantee of high quality and large scale with high yield on various transition metals. After synthesis of graphene on metal substrate, the subsequent transfer process is needed to transfer graphene onto various target substrates, such as bubbling transfer, renewable epoxy transfer and wet etching transfer. However, those transfer processes are hard to control and inevitably induce defects to graphene film. Especially for wet etching transfer, the metal substrate is totally etched away, which is horrendous resources wasting, time consuming, and unsuitable for industry production. Thus, our group develops one-step process to directly grow graphene on glass substrate in plasma enhanced chemical vapor deposition (PECVD). Copper foil is used as catalyst to enhance the growth of graphene, as well as a temperature shield to provide relatively low temperature to glass substrate. The effect of growth time is reported that longer growth time will provide lower sheet resistance and higher VSG flakes. The VSG with conductivity of $800{\Omega}/sq$ and thickness of 270 nm grown on glass substrate can be obtained under 12 min growing time. The morphology is clearly showed by SEM image and Raman spectra that VSG film is composed of base layer of amorphous carbon and vertically arranged graphene flakes.

• Tribology and Lubricants
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• 제38권5호
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• pp.222-226
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• 2022

Between diaphragms made of stainless steel (SUS), which is the main component of a hydrogen gas compressor, micro-slip occurs owing to repeated bending, resulting in scratches on the surface. The surface scratch of the compressor part is a problem with airtightness, which reduces the efficiency of the compressor; in severe cases, damage is a possibility. In this study, the changes in friction and wear characteristics due to the surface polishing of SUS and carbon-based solid lubricant films (graphene and CNT) were analyzed. Bare SUS, polished SUS, graphene film, and CNT film specimens were prepared. The surface roughness of the SUS was significantly reduced by surface polishing but increased by carbon-based solid lubricating films. In contrast, the friction coefficient maintained a similar value after surface polishing but was significantly reduced by the carbon-based solid lubricant films. In particular, the graphene film exhibited the lowest initial friction coefficient, while the CNT film exhibited the lowest overall average friction coefficient. Regarding the wear rate, polished SUS exhibited the lowest value, but the surface condition of the wear track showed that the carbon-based solid lubricating films were relatively less damaged. Although the wear rate measured was largely attributed to the solid lubricating film peeling off, the SUS surface under the film was considered protected.

• Composites Research
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• 제29권4호
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• pp.194-202
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• 2016

이차원 구조의 탄소 결합체인 그래핀은 뛰어난 물리적, 화학적 특성으로 인해 미래 전자 소자의 소재로 크게 각광을 받고 있는 물질이다. 따라서, 소자에서 사용된 기판이 그래핀의 물리적 특성에 끼치는 영향에 대한 이해는 그래핀의 응용에 있어서 필수적이며, 그에 대한 연구를 수행하였다. 니켈 (111)과 (100) 결정면에서 각각 성장한 그래핀과 니켈 기판의 상호작용에 대한 연구를 수행함과 동시에, 산화규소 기판으로 전사한 후, 기판과 그래핀과의 상호작용을 라만 분광법을 이용하여 연구하였다. 니켈 기판에서 성장한 그래핀은 기판의 면 방향과 상관없이 기판으로부터 전하의 이동에 따른 도핑효과는 발견되지 않았으며, 산화규소 기판 또한 도핑효과는 없었다. 니켈 기판과 그래핀 사이의 결합력이 그래핀과 산화규소 기판과의 결합력합보다 더 큰 것으로 분석이 되었으며, 니켈에서 성장한 그래핀은 기판의 영향을 받아 수축되어 있었고, 니켈 (100) 면에서는 그래핀이 엇맞음 성장하였음을 확인하였다. 마지막으로, 니켈 (111), (100) 면에서 성장한 그래핀을 산화 규소 기판으로 전사하면 서로 다른 파수 값에서 2D band의 픽이 관측되었다.