• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.205-206
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• 2011

Cu thin films for electromagnetic wave shielding were prepared on PET film and Ni-coated PET film by using Dry and Wet coating method, such as evaporation method, DC sputtering method and copper sulfate($CuSO_4$). After that, Zn thin film and Ni thin film were prepared onto the Cu thin films by using evaporation dry process and Ni electro plating wet process as a finishing treatment, respectively. The result of conductivity test and corrosion resistance test revealed Cu thin films which were formed with bigger grain size and high Cu composition rate have superior properties. Zn thin film by dry evaporation process and Ni thin film by wet electro plating process on Cu thin films were largely contributed to corrosion resistance. However, Ni thin film by wet process made conductivity of all specimen worse, the other hand, Zn thin film by dry process made it better to improve condictivity of specimens just prepared by dry process.

• Journal of the Korean institute of surface engineering
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• v.53 no.5
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• pp.232-240
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• 2020

Cu₂O films as a photocathode for photoelectrochemical water splitting were potentiostatically deposited on FTO glasses. The morphology and composition of the electrodeposited Cu₂O films were adjusted by the applied potentials. The potential-dependent grain size of Cu₂O films was characterized by XRD and SEM analysis. Photoelectrochemical properties of the fabricated Cu₂O photocathodes were investigated with photocurrents as a function of potentials under 1 sun condition of 100mW/㎠. Photocurrents of the electrodeposited Cu₂O films were controlled with the tailored surface morphologies of Cu₂O photocathodes.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.289-290
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• 2006

[ $SrTiO_3$ ] is usually added as shifters in order to move the $T_C$ of $BaTiO_3$ to lower temperatures because it is well established that the $T_C$ of $BaTiO_3$ decreases linearly with a solid solution of $Sr^{+2}$ in place of $Ba^{+2}$. It is not fully understood yet, however, how $SrTiO_3$ influences on the peak value of the dielectric constant $(\varepsilon_{max})$ at the $T_C$ of $BaTiO_3$. This research reports the effect of $SrTiO_3$ addition on εmax at the $T_C$ of $BaTiO_3$ ceramics. Based on the chemical composition and the grain size dependence of the dielectric property of $BaTiO_3$ ceramics, functionally graded $(Ba,Sr)TiO_3$ composites were designed and fabricated. Multi-layered $(Ba,Sr)TiO_3$ composites with a compositional gradient of $SrTiO_3$ exhibited a low temperature coefficient and high dielectric constant in a wide temperature range.

• Journal of Korea Foundry Society
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• v.7 no.2
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• pp.108-113
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• 1987

Al-Cr alloy with composition in the range from 1.5 wt% to 10 wt% Cr were rapidly solidified from the melt by the single roller method. The supersaturated solid solution was obtained up to 6 wt% Cr in Al-Cr alloy for $20{\mu}m$ thickness. Lattice parameter decreased with increasing Cr content at the rate of 0.00456A per wt% Cr up to 6 wt% Cr. Microhardness increased with increasing Cr content at the rate of $10\;Kg/mm^2$ per wt% Cr up to 6 wt% Cr. Microhardness measurements on the Al-6 wt% Cr supersaturated solid solution annealed isothermally showed no sign of age hardening. Decomposition temperature, determined by lattice parameter changes and microhardness changes, was $470^{\circ}C$ for Al-6 wt% Cr supersaturated solid solution. Transmission electron microscopy showed that decomposition within one hour below $400^{\circ}C$ occurred at grain boundaries only, and also the additional decomposition within grains being evident at $450^{\circ}C$ The coarse precipitate structure showed at $500^{\circ}C$ and $550^{\circ}C$, respectively. The coarse precipitate structure is considered $Al_7Cr$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.472-473
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• 2007

The $(Sr_{1-x}Ca_x)TiO_3$(ST) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. Also, the composition of ST thin films were closed to stoichiometry(1.081~1.117 in A/B ratio). The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$]. The current-voltage characteristics of ST15 thin films showed the increasing leakage current as the measuring temperature increases.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1134-1136
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• 1993

The mean grain size of sample decreases with increasing the addition of $Al_2O_3$ in the basic composition of YIG. It is mean that the addition of $Al_2O_3$ is helpless the development of magnetic properties in YIG garnet, considering the relation of ${\mu}{\propto}D^{1/3}$. To increase addition of $Al_2O_3$ decreased the area of hysterisis loop. It is known that the addition of $Al_2O_3$ is help the development of magnetic properties in YIG garnet, considering the relation of loss component factor and the area of hysterisis loop. As a results, sample with the addition of $Al_2O_3$ 0.5 mol % among the fabricated samples is must effective in the magnetic properties of YIG Garnet.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.258-261
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• 2011

A ferroelectric $(Bi,La)_4Ti_3O_{12}$ (BLT) thin film fabricated by the pulsed-DC sputtering method was evaluated on a cell structure to check its compatibility to high density ferroelectric random access memory (FeRAM) devices. The BLT composition in the sputtering target was $Bi_{4.8}La_{1.0}Ti_{3.0}O_{12}$. Firstly, a BLT film was deposited on a buried Pt/$IrO_x$/Ir bottom electrode stack with W-plug connected to the transistor in a lower place. Then, the film was finally crystallized at $700^{\circ}C$ for 30 seconds in oxygen ambient. The annealed BLT layer was found to have randomly oriented and small ellipsoidal-shaped grains (long direction: ~100 nm, short direction: ~20 nm). The small and uniform-sized grains with random orientations were considered to be suitable for high density FeRAM devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.797-802
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• 2014

In this study, in order to develop the capacitor composition ceramics with the good dielectric properties, $(Ba_{1-x}Ca_x)(Ti_{0.85}Zr_{0.12}Sn_{0.03})O_3$ (abbreviated as BCTZ) ceramics were prepared by the conventional solid-state reaction method. The effects of Ca substitution on the microstructure and dielectric properties was investigated. The X-ray diffraction patterns demonstrated that all the specimens showed perovskite phase, and secondary phases are indicated in the measurement range of X-ray diffraction. Also, all the specimens indicated an rhombohedron phase structure. It was identified from the X-ray diffraction patterns that the secondary phase formed in grain boundaries and then decreased the dielectric properties. For all the specimens, observed one peak was tetragonal cubic phase transition temperature($T_c$), which is located in the vicinity of room temperature.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.05a
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• pp.295-298
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• 2005

High temperature deformation behavior of $\alpha\;and\;\beta$ phase of Ti-6Al-4V was investigated within the framework of a self-consistent approach at various temperature ranges. To examine the flow behavior of u-phase, Ti-7.0Al-1.5V alloy was used, whose chemical composition is close to that of the $\alpha$ phase in Ti-6Al-4V at hot working temperatures. The flow stress of $\beta$ phase was predicted by using self-consistent approach. The flow stress of $\alpha$ phase was higher than that of $\beta$ phase above $750^{\circ}C$, while the $\beta$ phase revealed higher flow stress than a phase at $650^{\circ}C$. It was found that the relative strength and strain rate ratio between $\alpha\;and\;\beta$ phase significantly varied with temperature. From this approach, the mode for grain matrix deformation was proposed as a mixed type of both iso-stress and iso-strain rate modes.

• Korean Journal of Materials Research
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• v.18 no.2
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• pp.107-111
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• 2008

[ $BaO{\cdot}Nd_2O_3{\cdot}5TiO_2$ ] (BNT) ceramics modified with a borate glass containing Ba, Nd and Ti as glass constituents were investigated with regard to their sintering behavior and microwave dielectric properties. An addition of iso-component glass significantly improved the sinterabilty of the BNT ceramics and lowered the sintering temperature. A maximum density of $5.29\;g/cm^3$ and an x-y shrinkage of 17% were obtained for BNT ceramics containing 10wt.% of the glass sintered at $1100^{\circ}C$. The dielectric composition without the glass additive was only slightly densified at $1100^{\circ}C$. The resulting sample exhibited two crystalline phases, $BaNd_2Ti_5O_{14}$ and $Ba_2Ti_9O_{20}$, regardless of sintering temperature and glass content. When >10wt.% glass was added, exaggerated grain growth with a less uniform microstructure was found, resulting in the subsequent reduction of the fired density and the dielectric properties. BNT ceramics containing 10wt.% of the isocomponent glass sintered at $1100^{\circ}C$ for 4 h showed promising dielectric properties of k = 71.3 and Q = 1,330.