• Ocean and Polar Research
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• v.33 no.3
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• pp.193-209
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• 2011

The community structure of meiobenthos was studied at 16 stations within sandy tidal and subtidal zones in Jangbongdo in the Yellow Sea, Korea from Aug. 2006 to Jan. 2007. Meiobenthic organisms were collected by three core samples, with a 3.6 cm diameter, from each sediment sample taken with a Smith-McIntyre Grab. Mean grain size of study stations ranged from $1.49{\phi}$ to $3.55{\phi}$. Composition of sand ranged from 80.38% to 99.89%. There was reduction in total abundance and biomass of meiobenthos from summer to winter. Total densities of meiofauna ranged between 17 inds./10 $cm^2$ and 853 inds./10 $cm^2$. Nematodes, gastrotricha, nauplius and harpacticoids appeared as major taxa in decreasing order. This study shows that major taxa comprised 90 percent of total abundance. Most meiofaunal organisms are concentrated in the upper sediment layers and the total abundance and biomass of organisms in the tidal zone is higher than the subtidal zone.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.213-216
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• 1995

Strontium niobate, $Sr_2Nb_2O_{7}$ was prepared by the molten stilt synthesis (MSS) and the chemical coprecipitation method (CCP). Single phase $Sr_2Nb_2O_{7}$ was obtained by MSS and CCP at $750^{\circ}C$ and $800^{\circ}C$, respectively. An intermediate phase of composition, $Sr_{5}Nb_4O_{15}$, appeared at $700^{\circ}C$ when CCP method was employed. The resulting powder was observed to have finer particles and more uniform distribution of particle sizes, as compared to those obtained through the conventional method. Such powder characteristics allowed the use of a much lower sintering temperature of $1400^{\circ}C$. Grain-orientation along (0k0) direction, which is advantageous for improving dielectric properties, was also observed. The sintering characteristics and the dielectric properties prepared by MSS and CCP, were better than those by the conventional method.

• Transactions on Electrical and Electronic Materials
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• v.5 no.3
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• pp.109-112
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• 2004

In this study, in order to develop the low temperature sintering ceramics for ultrasonic vibrator, Pb(Sb$\_$$\frac{1}{2}$/Nb$\_$$\frac{1}{2}$/) O$_3$-Pb(Ni$\_$1/3/Nb$\_$2/3/)O$_3$-Pb(Zr$\_$0.48/Ti$\_$0.52/)O$_3$ ceramics were manufactured as a function of the amount of CuO addition, and their dielectric and piezoelectric characteristics were investigated. With increasing CuO addition, the grain size and density increased up to 0.3 wt% CuO addition. Taking into consideration electromechanical coupling factor(k$\_$p/) of 0.53, mechanical quality factor(Q$\_$m/) of 423, dielectric constant($\varepsilon$$\_$r/) of 1,759 and piezoelectric constant(d$\_$33/) of 362pC/N, it could be concluded that 0.5 wt% CuO added composition ceramic sintered at 920$^{\circ}C$ was suitable for ultrasonic vibrator application.

• Korean Journal of Materials Research
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• v.17 no.6
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• pp.308-312
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• 2007

Chromium oxide thin films have been deposited on silicon substrates using a tabletop 9kJ mathertyped plasma focus (PF) device. Before deposition, pinch behavior with gas pressure was observed. Strength of pinches was increased with increasing working pressure. Deposition was performed at room temperature as a function of working pressure between 50 and 1000 mTorr. Composition and surface morphology of the films were analyzed by Auger Electron Spectroscopy and Scanning Electron Microscope, respectively. Growth rates of the films were decreased with pressure. The oxide films were polycrystalline containing some impurities, Cu, Fe, C and revealed finer grain structure at lower pressure.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.436-441
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• 2002

Effect of Sn addition on the stress corrosion cracking(SCC) resistance of the Al-Cu-Mn cast alley was investigated by C-ring teat and electrical conductivity measurement, The electrical conductivity and SCC resistance increased by Sn addition. The alley containing 0,10%Sn showed maximum electrical conductivity and the best SCC resistance. At the same composition, the electrical conductivity and SCC resistance increased from peak aged condition to ever aged condition. The PFZ and coarse precipitates along the grain boundary were observed from TEM micrographs. The fracture mode of the alloy was confirmed as intergranular type and showed brittle fracture surface. The SCC mechanism of the alloy was concluded as the anodic dissolution model, The maximum hardness was increased from 130Hv in the Sn-free alloy to 156Hv in the 0.10%Sn added alloy.

• Journal of the Korean Magnetics Society
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• v.3 no.1
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• pp.41-47
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• 1993

Effects of Ta addition on Co-Cr pependicular magnetic recording media were studied to obtain high perpen-dicular coercivity at lower substrate temperature. For the purpose. magnetic properties and microstructures of Co-Cr-(Ta) films were studied by varying the Cr contents from 17 to 21 at.% and Ta contents for 0 to 3.2 at.%. Effectiveness of Ta addition in increasing perpendicular coercivity was significant for lower Cr content films. The increasement of perpendicular coercivity was more pronounced for the films deposited on $100^{\circ}C$ heated substrate in the case of ${(Co_{83}Cr_{17})}_{98.4}Ta_{1.6}$ composition. The cause of the increase of perpendicular coercivity was considered due to not the grain refinement effects and the improvement of c-axis alignments but increase of Ta and Cr segregation.

• Korean Journal of Materials Research
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• v.16 no.9
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• pp.564-570
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• 2006

Silicides have been required to be below 40 nm-thick and to have low contact resistance without agglomeration at high silicidation temperature. We fabricated composite silicide layers on the wafers from Ni(20 nm)/Co(20 nm)/poly-Si(70 nm) structure by rapid thermal annealing of $700{\sim}1100^{\circ}C$ for 40 seconds. The sheet resistance, surface composition, cross-sectional microstructure, and surface roughness were investigated by a four point probe, a X-ray diffractometer, an Auger electron spectroscopy, a field emission scanning electron microscope, and a scanning probe microscope, respectively. The sheet resistance increased abruptly while thickness decreased as silicidation temperature increased. We propose that the fast metal diffusion along the silicon grain boundary lead to the poly silicon mixing and inversion. Our results imply that we may consider the serious thermal instability in designing and process for the sub-0.1 um CMOS devices.

• Korean Journal of Materials Research
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• v.16 no.9
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• pp.571-577
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• 2006

We fabricated thermal evaporated 10 nm-Ni/(poly)Si and 10 nm-Ni/1 nm-Ir/(poly)Si films to investigate the thermal stability of nickel monosilicide at the elevated temperatures by rapid annealing them at the temperatures of $300{\sim}1200^{\circ}C$ for 40 seconds. Silicides for salicide process was formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester is used for sheet resistance. Scanning electron microscope and field ion beam were employed for thickness and microstructure evolution characterization. An x-ray diffractometer and an auger depth profile scope were used for phase and composition analysis, respectively. Nickel silicides with iridium on single crystal silicon actives and polycrystalline silicon gates showed low resistance up to $1200^{\circ}C$ and $800^{\circ}C$, respectively, while the conventional nickel monosilicide showed low resistance below $700^{\circ}C$. The grain boundary diffusion and agglomeration of silicides led to lower the NiSi stable temperature with polycrystalline silicon substrates. Our result implies that our newly proposed Ir added NiSi process may widen the thermal process window for nano CMOS process.

• Journal of the Korean Ceramic Society
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• v.31 no.7
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• pp.703-714
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• 1994

Sintering and microstructure of Ce-TZP/Al2O3 composite with $\alpha$-Al2O3 matrix containing dispersed 5~50 vol% ZrO2 were discussed. Sintered density was increased with elevating forming pressure in range of 6~300 MPa and about >99.2% of theoretical density was obtained at 1$600^{\circ}C$ for 2h in case of 300 MPa of 6~300 MPa uniaxially cold-pressed compacts containing 20 vol% ZrO2. All kinds of different batch composition exhibited nearly the same shrinkage behaviour with end-point shrinkage between 20 and 24%, and had the maximum shrinkage rate (0.41~0.54%/min) around 140$0^{\circ}C$. Grain growth was occurred faster in $\alpha$-Al2O3 than in {{{{ gamma }}-Al2O3 starting matrix during sintering at 1$600^{\circ}C$. Bimodal pore size distribution of interaglomerate pores with size of 0.03~0.2 ${\mu}{\textrm}{m}$ and of interaglomerate pores with size of around 60 ${\mu}{\textrm}{m}$ was obtained in Ce-TZP/$\alpha$-Al2O3 composite sintered at 130$0^{\circ}C$. But unimodal pore size distribution with around 0.1 ${\mu}{\textrm}{m}$ was observed in Ce-TZP/{{{{ gamma }}-Al2O3 composite sintered at the same temperature. Microcracks were occurred due to the tlongrightarrowm transformation of ZrO2 on cooling process.

• Electrical & Electronic Materials
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• v.6 no.1
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• pp.69-79
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• 1993

ZnO 바리스터는 전기전자 장치에 비이상적인 써어지 혹은 잡음신호가 침입하는 것을 막기위해서 폭넓게 사용되고 잇다. 많은 연구자들은 저전압 바리스터를 제조하기 위해서 요러가지 방법을 제시하였다. 그렇지만 그러한 방법들은 6V이하의 동작 전압을 갖는 바리스터를 제조하기는 어렵다. 본 연구에서는 새로운 3-성분 종입자법으로 제조한 바리스터의 전도특성을 보고하고자 한다. 온도범위 20-150.deg.C 및 전류 범위 $10^{-8}$~$10^{-1}$A/$cm^{2}$에서 관찰된 바리스터의 전도특성은 측정전류가 증가함에 따라서 다른 기구를 갖는 3개의 영역으로 구분되었다. 측정전류가 $10^{-3}$ A/$cm^{2}$이하인 경우에 오옴전도 혹은 누설전류 영역으로 해석 할 수 있었다. 측정 전류가 $10^{-3}$ A/$cm^{2}$ 부근에서는 이중 쇼트키 장벽에 의한 전도로 해석할 수 있었으며 또한 $10^{-3}$ A/$cm^{2}$ 이상의 전류 영역에서는 턴넬 전도 전류로 해석 할 수 있었다. 이상의 결과로 부터 3-성분 종입자법으로 저전압 바리스터를 제조하는 방법은 지금까지 보고된 어느 다른 방법보다도 우수하며 그 전도기구를 제시하였다.