• Nuclear Engineering and Technology
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• 제52권1호
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• pp.148-154
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• 2020

The radiation induced segregation of Cr at grain boundaries (GBs) in Ferritic/Martensitic steels was modeled assuming vacancy and interstitialcy diffusion mechanisms. In particular, the dependence of segregation on temperature and grain boundary misorientation angle was analyzed. It is found that Cr enriches at grain boundaries at low temperatures primarily through the interstitialcy mechanism while depletes at high temperatures predominantly through the vacancy mechanism. There is a crossover from Cr enrichment to depletion at an intermediate temperature where the Cr:Fe vacancy and interstitialcy diffusion coefficient ratios intersect. The bell-shape Cr enrichment response is attributed to the decreasing void sinks inside the grains as temperature rises. It is also shown that low angle grain boundaries (LAGBs) and special Σ coincidence-site lattice (CSL) grain boundaries exhibit suppressed radiation induced segregation (RIS) response while high angle grain boundaries (HAGBs) have high RIS segregation. This different behavior is attributed to the variations in dislocation density at different grain boundaries.

• 한국세라믹학회지
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• 제44권2호
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• pp.116-123
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• 2007

Electrical properties of AlN ceramics sintered with 1 wt% $Y_2O_3$ have been investigated. From the impedance spectroscopy, electrical conductivity of grain boundary was found to be much lower than that of grain. DC conductivity measurement showed the electrode polarization effects caused by blocking electrode. The heat-treatment at $1700^{\circ}C$ of the specimen sintered at $1850^{\circ}C$ transformed continuous pain boundary phases along triple boundary junctions into isolated particles in grain comers. The heat-treatment induced decreases both in grain and grain boundary conductivity, and in DC electrical conductivities. From the analysis on the transference number, ionic conductivity was shown to be more dominant than electron conductivity, which was due to ion compensation mechanism during oxygen incorporation into grain.

• Corrosion Science and Technology
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• 제12권6호
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• pp.265-273
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• 2013

Ti-stabilized 11 wt% Cr ferritic stainless steels (FSSs) for automotive exhaust systems have been experienced intergranular corrosion (IC) in some heat-affected zone (HAZ). The effects of sensitizing heat-treatment and silicon on IC were studied. Time-Temperature-Sensitization (TTS) curves showed that sensitization to IC was observed at the steels heat-treated at the temperature lower than $650^{\circ}C$ and that silicon improved IC resistance. The sensitization was explained by chromium depletion theory, where chromium is depleted by precipitation of chromium carbide during sensitizing heat-treatment. It was confirmed with the results from the analysis of precipitates as well as the thermodynamical prediction of stable phases. In addition, the role of silicon on IC was explained with the stabilization of grain boundary. In other words, silicon promoted the formation of the grain boundaries with low energy where precipitation was suppressed and consequently, the formation of Cr-depleted zone was retarded. The effect of silicon on the formation of grain boundaries with low energy was proved by the analysis of coincidence site lattice (CSL) grain boundary, which is a typical grain boundary with low energy.

• 한국세라믹학회지
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• 제33권1호
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• pp.35-40
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• 1996

The influence of grain boundary on the electrical properties of WO3-doped SrTiO3 ceramics has been investi-gated. From the result resistivity and capacitance of grains and boundaries were obtained by employing impedance spectrocopy. And the temperature dependance of capacitance of WO3-doped SrTiO3. was influenced directly by the variation of grain boundary capacitance. It was also found by impedance spectroscopy that the dispersion frequency characteristics showed discernibly that the resistivity of the specimen varied with WO3 content.

• 대한기계학회논문집A
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• 제20권4호
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• pp.1177-1185
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• 1996

The crack growth under creep condition is one of the major damage mechanisms which determines remaining life of the component operating at high temperatures. In this paper, the creep crack growth by grain boundary cavitation is studied, which is frequently observed failure mechanism for creep brittle materials. As a result of diffusive growth of creep cavities, it is shown that the crack-tip stress field is modified from the original stress distribution by the amount of singularity attenuation parameter which is function of crack growth rate and material properties. Also, the stress relaxation at crack-tip results in the extension of cavitating area by the load dump effect to meet the macroscopic force equilibrium conditdion.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1992년도 추계학술발표강연 및 논문개요집
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• pp.26-27
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• 1992

• 소성∙가공
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• 제14권1호
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• pp.65-70
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• 2005

A phase mixture model was employed to simulate the deformation behaviour of metallic materials covering a wide grain size range from micrometer to nanometer scale. In this model a polycrystalline material is treated as a mixture of two phases: grain interior phase whose plastic deformation is governed by dislocation and diffusion mechanisms and grain boundary 'phase' whose plastic flow is controlled by a boundary diffusion mechanism. The main target of this study was the effect of grain size on stress and its strain rate sensitivity as well as on the strain hardening. Conventional Hall-Petch behaviour in coarse grained materials at high strain rates governed by the dislocation glide mechanism was shown to be replaced with inverse Hall-Petch behaviour in ultrafine grained materials at low strain rates, when both phases deform predominantly by diffusion controlled mechanisms. The model predictions are illustrated by examples from literature.

• 한국세라믹학회지
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• 제47권1호
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• pp.71-74
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• 2010

We have investigated protonic conduction in highly dense (>98%) polycrystalline Y-doepd $BaZrO_3$ (BYZ) ceramic with an average grain size of ~85 nm. It is observed that the protonic conductivity across the grain boundaries in this nano-crystallilne BYZ (n-BYZ) is significantly higher than the microcrystalline counterpart. Such a remarkable enhancement in grain boundary conductivity results in high overall conductivity that may allow this chemically stable protonic conductor to serve as a solid electrolyte for low-temperature solid oxide fuel cell applications.

• 한국세라믹학회지
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• 제45권1호
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• pp.69-74
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• 2008

The effects of $SiO_2$ impurity on the high temperature resistivities of AIN ceramics have been investigated. When $SiO_2$ was added into 1 wt% $Y_2O_3$-doped AIN, DC resistivities have decreased and electrode polarizations disappeared. Impedance spectroscopy showed two semi-circles at $600^{\circ}C$, which were attributed to grain and grain boundary, respectively. $SiO_2$ doping had more significant effects on the grain resistivity than grain boundary resistivity, implying that doped Si acted as a donor in AIN lattice. In addition, voltage dependency of DC resistivity was observed, which might be related to dependency of size of grain boundary semi-circle on the bias voltage in impedance spectroscopy.

• 대한화학회지
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• 제21권5호
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• pp.339-352
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• 1977

소성변형에 대한 저자들의 이론(제1보)을 요업재료, 금속, 합금 및 단결정들에 적용하였다. 그 결과 다중 결정에서는 dislocation 운동과 grain boundary 운동이 실험조건에 따라 함께 또는 분리되어 나타나는 반면 단결정에서는 dislocation 운동만 나타났다. 유동식에 나타나는 파라미터$({\alpha}_{d1},\;1/{\beta}_{d1})와\;({\alpha}_{gj}/X_{gj},\;1/{\beta}_{gj})$ (j = 1 or 2) 및 활성화엔탈피 ${\Delta}H_{k1}^{\neq}$ (k = d 혹은 g)를 구하여 예측한 소성변형은 실험과 잘 일치함을 보았다. 여기서 첨자 d1는 첫번째의 dislocation 유동단위, gj는 j번째 grain boundary 유동단위를 나타낸다. 활성화엔탈피에 대하여 ${\Delta}H_{d1}^{\neq}$는 bulk의 자체확산에 대한 활성화엔탈피와 일치하고 ${\Delta}H_{g1}^{\neq}$는 grain boundary 자체확산에 대한 활성화엔탈피와 일치하였다. 이 사실은 저자들의 이론의 정당성을 보이고 있다.