• Journal of the Korean Ceramic Society
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• v.29 no.2
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• pp.83-88
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• 1992

New ceramic substrates firable at low temperature (<1000$^{\circ}C$) were prepared with mixture of alumina and glass powders in CaO-Al2O3-SiO2 system. The substrate of alumina 40 wt% and glass 60 wt%, which was fired between 900∼1000$^{\circ}C$, shows low dielectric constant (5∼8 at 1 MHz), specific gravity of 3.10, relatively low thermal expansion coefficient (5.5${\times}$10-6/$^{\circ}C$ at 40∼500$^{\circ}C$) and excellent surface roughness (0.4∼0.5 ${\mu}$Ra). These properties were thought to be superior to those of conventional Al2O3 ceramic substrates.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.123-123
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• 2015

Al doped ZnO(AZO) films as a transparent conductive oxide (TCO) electrode were deposited on glass, polyethylene naphthalate (PEN) and polyethylene terephthalate (PET) at room temperature by a conventional rf-magneton sputtering (CMS) and a facing target sputtering (FTS) using Al2O3 and ZnO targets. In order to investigation of AZO properties, the structural, surface morphology, electrical, and optical characteristics of AZO films were respectively analyzed. The resistivities of AZO films using FTS system were $6.50{\times}10-4{\Omega}{\cdot}cm$ on glass, $7.0{\times}10-4{\Omega}{\cdot}cm$ on PEN, and $7.4{\times}10-4{\Omega}{\cdot}cm$ on PET substrates, while the values of AZO films using CMS system were $7.6{\times}10-4{\Omega}{\cdot}cm$ on glass, $1.20{\times}10-3{\Omega}{\cdot}cm$ on PEN, and $1.58{\times}10-3{\Omega}{\cdot}cm$ on PET substrates. The AZO-films deposited by FTS system showed uniform surface compared to those of the films by CMS system. We thought that the films deposited by FTS system had low stress due to bombardment of high energetic particles during CMS process, resulted in enhanced electrical conductivity and crystalline quality by highly c-axis preferred orientation and closely packed nano-crystalline of AZO films using FTS system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1110-1114
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• 2003

We have investigated the generation of pretilt angle for a nematic liquid crystal (NLC) alignment with rubbing alignment method on polyimide surfaces using thin plastic substrates. It was found that monodomain alignment of NLC is obtained with rubbing alignment method on polyimide surfaces using thin plastic substrates. The NLC pretilt angles generated are about 3$^{\circ}$ by the rubbing alignment method on thin plastic substrates, However, the pretilt angle are at about 1.7$^{\circ}$ lower on the glass substrate than on thin plastic substrate. We obtain that AFM (atomic force microscope) image of rubbed PI surface with polymer film has formed the micro-groove structure at the low curring temperature (120$^{\circ}C$). However, no grooves are obtained on the glass substrate at the same temperature. It is considered that this alignment may be attributed to roughness of micro-groove substrate. The tilt angle increases with increasing baking temperature for making polyimide layer using glass substrate. It was concluded that the pretilt angle in the polyimide surface is attributable to the increasing of imidization rato.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.2
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• pp.119-130
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• 1994

To deposit silicon on borosilicate glass substrates, 18 different substrate combinations were investigated because of the difficulty of direct deposition of silicon. Sucessful results were obtained from Al-and Mg-treated glass and furnace annealed sputtered silicon deposited glass substrates. A continuous silicon thin film on a large area substrates was obtained in the temperatures ranges from $420^{\circ}C to 520^{\circ}C$. These thin films might be applied to lower the cost of solar cells and solar cell modules.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.370-375
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• 2001

PZT thin films (3500${\AA}$) ahve been prepared onto Pt/Ti/corning glass (1737) substrates with a RF magnetron sputtering system using Pb$\sub$1.50/(Zr$\sub$0.52/,Ti$\sub$0.48)O$_3$ ceramic target. We used two-step annealing techniques, PZT thin films were grown at a 300$^{\circ}C$ substrate temperature and then subjected to an RTA treatment. In case of 500$^{\circ}C$ RTA temperature show pyrochlore phase. The formation of Perovskite phase started above 600$^{\circ}C$ and PZT thin films generated (101) preferred orientation. As the RTA time and temperature increased, crystallization of PZT films were enhanced. The PZT capacitors fabricated at 650$^{\circ}C$ for 10 minutes RTA treatment showed remanent polarization 30 ${\mu}$C/$\textrm{cm}^2$, saturation polarization 42${\mu}$C/$\textrm{cm}^2$, coercive field 110kV/cm, leakage current density 2.83x10$\^$-7/A/$\textrm{cm}^2$, remanent polarization were decreased by 30% after 10$\^$9/ cycles.

• Transactions on Electrical and Electronic Materials
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• v.14 no.3
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• pp.152-155
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• 2013

$TiO_2$ films were deposited on glass substrates with and without $O_2$ plasma etching by using the RF-magnetron sputtering method. We focused on the effect of surface structure on the photoinduced hydrophilic properties of $TiO_2$ films, fabricated on different surface conditions according to the presence or absence of the $O_2$ plasma treatment on glass substrates. The wettability and photoinduced hydrophilic properties of the $TiO_2$ films were investigated according to the changes in water contact angles under UV light irradiations with a very low intensity of 0.1 $mW/cm^2$. The photoinduced hydrophilic properties on the $TiO_2$ formed above the plasma treated glass were also superior to those on the $TiO_2$ formed above the bare glass. This enhanced $TiO_2$ film has been used practically for self cleaning and anti-fogging glasses.

• Korean Journal of Materials Research
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• v.24 no.3
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• pp.123-128
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• 2014

To realize high-performance thin film solar cells, we prepared CIGS by the co-evaporation technique on both sodalime and Corning glass substrates. The structural and efficient properties were investigated by varying the thickness of the Mo:Na layer, where the total thickness of the back contact was fixed at 1${\mu}m$. As a result, when the Mo:Na thickness was 300 nm on soda-lime glass, the measured Na content was 0.28 %, the surface morphology was a plate-like compact structure, and the crystallinity by XRD showed a strong peak of (112) preferential orientation together with relatively intense (220) and (204) peaks as the secondary phases influenced crystal formation. In addition, the substrates on soda-lime glass effected the lowest surface roughness of 2.76 nm and the highest carrier density and short circuit current. Through the optimization of the Mo:Na layer, a solar conversion efficiency of 11.34% was achieved. When using the Corning glass, a rather low conversion efficiency of 9.59% was obtained. To determine the effects of the concentration of sodium and in order to develop a highefficiency solar cells, a very small amount of sodium was added to the soda lime glass substrate.

• Bulletin of the Korean Chemical Society
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• v.34 no.12
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• pp.3715-3721
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• 2013

In this study, the behavior of cells on the modified surface, and the correlation between the modified substrates and the response of cells is described. A close-packed layer of nano-sized silica beads was prepared on a coverslip, and the adhesion, proliferation, and migration of BALB/3T3 fibroblast cells on the silica layer was monitered. The 550 nm silica beads were synthesized by the hydrolysis and condensation reaction of tetraethylorthosilicate in basic solution. The amine groups were introduced onto the surfaces of silica particles by treatment with 3-aminopropyltrimethoxysilane. The close-packed layer of silica beads on the coverslip was obtained by the reaction of the amine-functionalized silica beads and the (3-triethoxysilyl)propylsuccinic anhydride treated coverslip. BALB/3T3 fibroblast cells were loaded on bare glass, APTMS coated glass, and silica bead coated glass with the same initial cell density, and the migration and proliferation of cells on the substrates was investigated. The cells were fixed and stained with antibodies in order to analyze the changes in the actin filaments and nuclei after culture on the different surfaces. The motility of cells on the silica bead coated glass was greater than that of the cells cultured on the control substrate. The growth rate of cells on the silica bead coated glass was slower than that of the control. Because the close-packed layer of silica beads gave an embossed surface, the adhesion of cells was very weak compared to the smooth surfaces. These results indicate that the adhesion of cells on the substrates is very important, and the actin filaments might play key roles in the migration and proliferation of cells. The nuclei of the cells were shrunk on the weakly adhered surfaces, and the S1 stage in which DNA is duplicated in the cell dividing processes might be retarded. As a result, the rate of proliferation of cells was decreased compared to the smooth surface of the control. In conclusion, the results described here are very important in the understanding of the interaction between implanted materials and biosystems.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.1
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• pp.27-31
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• 2007

The cpapcitors with MIM(metal-insulator-metal) structures using PVP gate insulation films were prepared for the application of flexible organic thin film transistors (OTFT). The co-polymer organic insulation films were synthesized by using PVP(poly-4-vinylphenol) as a solute and PGMEA(propylene glycol monomethyl ether acetate) as a solvent. The cross-linked PVP insulation films were also prepared by addition of poly(melamine-co-formaldehyde) as thermal hardener. The leakage current of the cross- linked PVP films was found to be about 1.3 nA on Al/PES(polyethersulfone) substrate, whereas, on ITO/ glass substrate was about 27.5 nA indicating improvement of the leakage current at Al/PES substrates. Also, the capacitances of all prepared samples on ITO/glass and Al/PES substrates w ere ranged from 1.0 to $1.2nF/cm^2$, showing very similar result with the calculated capacitance values.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1818-1820
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• 1999

This paper presents direct ${\mu}c$-Si:H thin film growth on the glass substrates using RPCVD system (remote plasma chemical vapor deposition) in low temperature. Hydrogenated micro-crystalline silicon deposited by RPCVD system in low temperature is very useful material for photovoltaic devices, sensor applications, and TFTs (thin film transistors). Varying the deposition conditions such as substrate temperature, gas flow rate, reactive gas ratio $(SiH_4/H_2)$, total chamber pressure, and rf power, we deposited ${\mu}c$-Si:H thin films on the glass substrates (Corning glass 1737). And then we measured the structural and electrical properties of the films.