• 한국진공학회지
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• 제19권2호
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• pp.96-104
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• 2010

NIL, S-FIL과 같은 각인 기술(Imprinting lithography)를 적용하기 위한 투명하고 단단한 복제 틀(replica hard mold)을 제작하여 고가의 원판(master)와 패턴이 형성되는 기판과의 접촉을 근본적으로 방지해 경제적인 공정이 가능함을 제안한다. 실리콘 웨이퍼(Si wafer)와 같은 원판(master)과 패턴 형성 시 사용되는 기판과 직접적인 접촉을 방지하기 위해 우선 액상 공정을 이용하여 비접착성 표면처리된 고분자 복제(polymer copy)를 매개체(carrier)로 단단한 복제 틀을 제작한다. 이렇게 제작된 단단한 복제 틀(replica hard mold)는 유리와 거의 같은 강도와 투명도를 나타내며, 각인 공정(imprinting process)에서 석영 틀, 실리콘 웨이퍼(quartz mold, Si wafer)과 같이 값비싼 원판(master)의 직접 사용을 대체하여 성공적으로 패턴을 구현할 수 있다.

• 한국진공학회지
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• 제19권3호
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• pp.206-210
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• 2010

RF 마그네트론 스퍼터링법을 이용하여 Al 도핑된 ZnO 박막을 Ar 유량에 따라 증착하고 박막의 다양한 특성을 연구하였다. ZnO 박막의 Ar 유량 변화를 통해 고품질 박막을 증착할 수 있었고 Al 도핑된 ZnO 박막에 대한 Ar 유량의 영향을 확인하였다. 모든 Al 도핑된 ZnO에서 80% 이상의 좋은 투과도를 보였다. Hall 측정과 X-ray photoelectron spectrometer 측정 결과, 비저항이 가장 작은 60 sccm에서 가장 작은 Al 도핑 농도를 보였다. Ar 유량에 따른 Al 도핑된 ZnO 박막에서의 전기적인 특성은 Al 도핑 농도보다 산소 공공에 의해 더 영향을 받음을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.103-107
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• 2000

Boron Phosphide films were deposited on the glass substrate at the low temperature, 55$0^{\circ}C$, by the reaction of B$_2$H$_{6}$ with PH$_3$ using CVD. $N_2$ was employed as carrier gas. The optimal gas rates were 50 $m\ell$/min for B$_2$H$_{6}$, 50 $m\ell$/min for PH$_3$ $m\ell$/min and 1.5 $\ell$/min for $N_2$. To investigate the annealing effect, the films were annealed for 1hour, 3hours in $N_2$ambient at 55$0^{\circ}C$ and tested. The deposition rate was 1000$\AA$/min and the refractive index of film was 2.6. The measurement of X-RD shows that the films have the preferred orientation of (1 0 1) and the intensity of the peak for (1 0 1) orientation decreases according to the annealing time. The data of VIS spectrophotometer proved that the films are transparent in the visible range and the maximal transmittance increases according to the annealing time; 75.49% for as-deposited, 76.71% for 1hr-annealed and 86.4 % for 3hrs-annealed. The measurement of AFM shows that the average surface roughness increases according to the annealing time; 73$\AA$ for as-deposited, 88.9$\AA$ for 1hr-annealed and 220$\AA$ for 3hrs-annealed. Also, The data of the secondary electron emission rate(Υ) shows that the secondary electron emission rate increases according to the annealing time; 0.317 for 1hr-deposited, 0.357 for 1hr-annealed and 0.537 for 3hrs-annealed. And, The measurement of FT-IR that the characteristic of transmittance in the infrared range was stabilized through annealing.ing.

• 대한기계학회논문집 C: 기술과 교육
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• 제5권2호
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• pp.89-95
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• 2017

제품을 개발하는데 있어서 경량화와 원가절감이라는 두가지 요소는 가장 중요한 화두이다. 특히 대형 LCD 로봇은 최대 $3{\times}3m$ 이상의 글라스를 7m 높이까지 상하, 전후로의 직선운동과 선회축을 중심으로한 회전운동을 하면서 작업공정간 이송을 가능케 하는 대형 구조물이다. 따라서 지나치게 무거울 경우에는 클린룸내 설치에 문제가 있을 수 있고 반송물의 정확한 이송을 위하여는 고강성이 요구되며 대량 생산을 위한 연속작업을 충분히 감당할 수 있는 내구강도를 확보하여야 한다. 따라서 경량화, 고강성, 고강도 제품에 대한 요구는 갈수록 증가하고 있다. 현재 개발되고 있는 11 세대 대형 LCD 승강프레임은 이러한 요구조건을 충족하기 위하여 최적설계 기법을 적용하여 기존 제품 대비 경량화와 고강성 요구조건을 만족하였으며 용접부에 대한 상세 수명평가로 내구강도에 대한 신뢰성을 확보하였다.

• 마이크로전자및패키징학회지
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• 제16권2호
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• pp.21-25
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• 2009

The organic-inorganic thin film transistors (OITFTs) with ZnO channel layer and the cross-linked PVP (Poly-4-vinylphenol) gate insulator were fabricated on the patterned ITO gate/glass substrate. ZnO channel layer was deposited by using atomic layer deposition (ALD). In order to improve the electrical properties, $O_2$ plasma treatment onto PVP film was introduced and investigated the effect of the plasma treatments on the electrical properties of the OITFTs. The field effect mobility and sub-threshold slope (SS) values of the OITFT decreased slightly from 0.24 to 0.16 $cm^2/V{\cdot}s$ and from 9.7 to 9.2 V/dec, respectively with increasing RF power from 30 to 50 Watt. The $I_{on/off}$ ratio was about $10^3$ for all samples with $O_2$ plasma treatment.

• E2M - 전기 전자와 첨단 소재
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• 제7권3호
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• pp.243-251
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• 1994

ITO(Indium Tin Oxide) film with thickness of 1500.angs. was prepared by an e-beam evaporator onto a glass and a p-type InP wafer (100) LEC grown Zn-doped p=2.3*10$\^$16/cm$\^$-3/), in which the components of ITO used for evaporation source were hot pressed pellets 1 mole% ln$\_$2/O$\_$3/+9 mole% SnO$\_$2/, and evaporated in O$\_$2/ ambient. The optimum conditions to preparation of ITO thin film were the substrate temperature of 350.deg. C, the injected oxygen pressure of 2*10$\^$-4/ torr, and the evaporation speed of 0.2-0.3.angs./sec, respectively. In these optimum conditions, the resistivity and the carrier concentration were 5.3*10$\^$-3/ .ohm.-cm, 6.5*10$\^$20/cm$\^$-3/, and the transmittance was over 80%. From the results of J-V measurements in ITO/p-InP structure solar cells, the higher pressure of injected oxygen, the more open circuit voltage. The efficiency of ITO/p-InP solar cell without the grid line contact, prepared by the optimum evaporation conditions, was 7.19%. By using the grid line contact, the efficiency, the open circuit voltage, the short circuit current density, the fill factor, the series resistance, and the shunt resistance were 8.5%, 0.47V, 29.48 mAcm$\^$-2/ , 61.35%, 3.ohm., and 26.6k.ohm., respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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• pp.68-70
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• 2006

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200 [$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1:1:2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, $312.502[cm^2/V{\cdot}s]$ and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• Current Photovoltaic Research
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• 제3권1호
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• pp.5-9
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• 2015

Absorption and luminescence characteristics of disperse red-19 (DR-19) and $TiO_2$ composite have been investigated with various poling electric field strengths. Two step synthetic processes were employed to employ the DR-19 to the $TiO_2$ sol-gel. Firstly, urethane bond formation between DR-19 (-OH) and 3-isocyanatopropyl triethoxysilane (ICPTES, -N=C=O) performed (ICPDR) prior incorporation to the $TiO_2$ sol-gel. Secondary, the hydrolysis of the ethoxy group from the ICPTES and condensation reaction between silanol groups from ICPTES and $TiO_2$ sol-gel were performed. The ICPDR and $TiO_2$ sol-gel ($DRTiO_2$) were mixed and stirred for several days. The composite was coated to the ITO coated glass substrate. Corona poling were performed before drying the composite with various electric field strengths. The absorption intensity decreased with the increase of the poling field strength, which resulted in the increase of poling efficiency. The photoluminescence also decreased as the poling field strength increased. There is long luminescence tail for the poled $DRTiO_2$ film compared with unpoled $DRTiO_2$ film. The luminescence long tail indicates that the self-trapped excitons and polarons were generated when the $DRTiO_2$ film was poled with electric field.

• Environmental Engineering Research
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• 제19권3호
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• pp.255-259
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• 2014

In this research, we compared the COD removal efficiencies of titanium dioxide ($TiO_2$) thin films coated on the surfaces of borosilicate glass that prepared by three different numbers of coating layer; i) 3 layers ii) 4 layers and iii) 5 layers by sol-gel method. All of the prepared $TiO_2$ thin films consisted of pure anatase crystalline structure with grain sizes in the range 20-250 nm. The calculated optical band gaps of the $TiO_2$ thin films were 3.24. The total apparent surface area per total weight of $TiO_2$ thin films were 4.74, 3.86 and $2.79m^2g^{-1}$ for 3, 4 and 5 layers coating, respectively. The kinetics of the photodegradation reactions of COD under UVA light source were described by the Langmuir-Hinshelwood (L-H) kinetic model. The specific rates of the photodegradation of $TiO_2$ thin films at 3 layers coating was $1.40{\times}10^{-4}min^{-1}mW^{-1}$, while for the 4 layers coating and the 5 layers coating were $1.50{\times}10^{-4}$ and $4.60{\times}10^{-4}min^{-1}mW^{-1}$, respectively. The photocatalytic performance of COD degradation was higher with smaller grain size, higher surface area and narrow optical band gaps. Moreover, the numbers of coating layer on substrate also have great influence for kinetic of COD removal.

• 한국표면공학회지
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• 제50권5호
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• pp.345-351
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• 2017

A double-layered anti-reflective coating with hydrophilic/abrasion-resistant properties was studied using anatase titanium dioxide($TiO_2$) and silicon oxycarbide($SiO_xC_y$) thin film. $TiO_2$ and $SiO_xC_y$ thin films were sequentially deposited on a glass substrate by DC sputtering and PECVD, respectively. The optical properties were measured by UV-Vis-NIR spectrophotometer. The abrasion-resistance and the hydrophilicity were observed by a taber abrasion tester and a contact angle analyzer, respectively. The $TiO_2/SiO_xC_y$ double-layer thin film had an average transmittance of 91.3%, which was improved by 10% in the visible light region (400 to 800 nm) than that of the $TiO_2$ single-layer thin film. The contact angle of $TiO_2/SiO_xC_y$ film was $6.9^{\circ}$ right after UV exposure. After 9 days from the exposure, the contact angle was $10.2^{\circ}$, which was $33^{\circ}$ lower than that of the $TiO_2$ single-layer film. By the abrasion test, $SiO_xC_y$ film showed a superior abrasion-resistance to the $TiO_2$ film. Consequently, the $TiO_2/SiO_xC_y$ double-layer film has achieved superior anti-reflection, hydrophilicity, and abrasion resistance over the $TiO_2$ or $SiO_xC_y$ single-layer film.