• Korean Journal of Materials Research
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• v.4 no.1
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• pp.31-36
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• 1994

The bonding behavior of $SiO_{2}$ thin film and glass during VCR head fabrication was investigated, varying the surface roughness of substrate and the sputtering parameter. Insufficient fillings of grooves In the $SiO_{2}$ film with glass was postulated to give rise to the generation of bubble in the glass. The surface roughness of $SiO_{2}$ film was found to depend on that of substrate. The lower the deposition rate, the smoother the surface of film. The bubble free glass after bonding could be obtained using substrate polished with 0.05$\mu\textrm{m}$ $Al_2O_3$ powder under the sputtering condition of 10% oxygen pressure.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.1
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• pp.27-31
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• 2007

The cpapcitors with MIM(metal-insulator-metal) structures using PVP gate insulation films were prepared for the application of flexible organic thin film transistors (OTFT). The co-polymer organic insulation films were synthesized by using PVP(poly-4-vinylphenol) as a solute and PGMEA(propylene glycol monomethyl ether acetate) as a solvent. The cross-linked PVP insulation films were also prepared by addition of poly(melamine-co-formaldehyde) as thermal hardener. The leakage current of the cross- linked PVP films was found to be about 1.3 nA on Al/PES(polyethersulfone) substrate, whereas, on ITO/ glass substrate was about 27.5 nA indicating improvement of the leakage current at Al/PES substrates. Also, the capacitances of all prepared samples on ITO/glass and Al/PES substrates w ere ranged from 1.0 to $1.2nF/cm^2$, showing very similar result with the calculated capacitance values.

• Korean Journal of Metals and Materials
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• v.50 no.2
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• pp.159-163
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• 2012

A TCO-less ruthenium (Ru) catalytic layer on glass substrate instead of conventional Ru/TCO/ glass substrate was assessed as counter electrode (CE) material in dye sensitized solar cells (DSSCs) by examining the effect of the Ru thickness on the DSSC performance. Ru films with different thicknesses (34, 46, 69, and 90 nm) were deposited by atomic layer deposition (ALD) on glass substrates to replace both existing catalyst and electrode layer. In order to make our comparison, we also prepared an Ru catalytic layer by a similar method on FTO/glass substrate. Finally, we prepared the $0.45cm^2$ DSSC device the properties of the DSSCs were examined by cyclic voltammetry (CV), impedance spectroscopy (EIS), and current-voltage (I-V) method. CV measurements revealed an increase in catalytic activity with increasing film thickness. The charge transfer resistance at the interface between the electrolyte and Rudecreased with increasing Ru thickness. I-V results showed that the energy conversion efficiency increased up to 1.96%. Our results imply that TCO-less Ru/glass might perform as both catalyst and electrode layer when it is used in counter electrodes in DSSCs.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.399-405
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• 2014

Porous alumina with different porosities, 5.2 - 47.5%, were coated with cover-glass having a thickness of $160{\mu}m$, using epoxy adhesive. We investigated the effect of the porosity of the substrate layer on the crack initiation load, and the size of cracks propagated in the coating layer. Hertzian indentations were used to evaluate the damage behavior under a constrained loading condition. Typically, two types of cracks, ring cracks and radial cracks, were observed on the surface of the glass/porous alumina structure. Indentation stress-strain curves, crack initiation loads, crack propagation sizes, and flexural strengths were investigated as a function of porosities. The results indicated that a porosity of less than 30% and a higher substrate elastic modulus were beneficial at suppressing cracks occurrence and propagation. We expect lightweight mechanical components with high strength can be successfully fabricated by coating and controlling porosities in the substrate layer.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.47-53
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• 2000

The fluxless wetting properties of TSM-coated glass substrate were evaluated by the wetting balance method. We could estimate the wettability of the TSM with new parameters obtained from the wetting balance test for one side-coated specimen. It was more effective in wetting to use Cu as a wetting layer and Au as a protection layer than to use Au itself as a wetting layer. The SnSb solder showed better wettability than SnAg, SnBi, and SnIn solders. The contact angle of the one side-coated glass substrate to the Pb-free solders could be calculated from the farce balance equation by measuring the static force and the tilt angle.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.170-174
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• 2017

In 3 electrode reflective displays using a plastic substrate, unstable packaging induces particle clumping and optical degradation due to external air inflow and electronic ink evaporation. In this work, we fabricate 3 electrode electronic paper using glass wafer, ITO/plastic film, and ITO/glass/gas barrier film as an upper substrate after injecting electronic ink onto the lower substrate. Then, we studied its properties. After operating under stress conditions for 336 hours at $85^{\circ}C$ and 75% humidity, the reflectivity of driven e-paper panels with white color was 25.5% for the panels using glass wafer, 22.5% for plastic film including a gas barrier layer, and 16% for plastic film only. From these optical properties, we conclude that gas barrier film improves upper film isolation as a desirable packaging method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.53-56
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(Phen)/Al(A), glass substrate/ITO/TPD/Eu(TTA)$_3$(p-hen)/Al(B) and glass substrate/ITO/TPD/Eu(TTA)$_3$(phen)/AlQ$_3$/Al(C) structures were fabricated by vacuum evaporation method. where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material. and tris(8-hydroxyquinoline)Aluminum(AlQ$_3$) as an electron transporting layer. Electroluminescent(EL) and I-V characteristics of Eu(TTA)$_3$(Phen) with a various thickness were investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/$\textrm{cm}^2$ at a dc operation voltage of 9V. Electrical transporting phenomena of these structures was explained using the trapped- charge-limited current model with I-V characteristics.

• Journal of Electrochemical Science and Technology
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• v.2 no.2
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• pp.68-75
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• 2011

In this review, we have investigated the effect of $TiO_2$-based blocking layers (t-BLs), deposited on a transparent conductive oxide (TCO)-coated glass substrate, on the photovoltaic performance of dye-sensitized solar cells (DSSCs). The t-BL was deposited using spin-coating or sputtering technique, and its thicknesses were varied to study the influence of the thin $TiO_2$ layer in between transparent conducting glass and nanocrystalline $TiO_2$ (nc-$TiO_2$). The DSSC with the t-BL showed the improved adhesion and the suppressed charge recombination at a TCO glass substrate than those without the t-BL, which led to the higher conversion efficiency.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1640-1644
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• 2006

The first issue that should be overcome in copper process is its poor adhesive strength between pure copper film and glass substrate. In this study, defining the adhesive strength of pure copper film on various substrates and clarifying the key deposition parameters are presented for the investigation of copper process. First, using different kinds of surface plasma treatments were studied and the results showed that the adhesive strength was not improved even though the roughness of glass substrate surface was increased. Second, adding an adhesive layer between glass substrate and pure copper film was used to enhance the adhesion. Based on the data in the present paper, adopting copper alloy film as an adhesive layer can have capability preventing peeling problem in copper process. Besides, Cu/Cu alloy structure could be etched with the same etchant with better taper angle than the one with single layer of Cu. Unlike Cu/Mo structure, there is no residual problem for Cu/Cu alloy structure during etching process. Finally, this structure was examined in electrical test without significant difference in comparison with the conventional metal process.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.9 s.180
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• pp.2371-2380
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• 2000

In this paper, we developed the proximity exposure system with the vertical structure of glass and mask stage to minimize the mask's warp caused by the pull of gravity. This system, which canirradiate the ultra violet through 1440 H 850 $\textrm{mm}^2$ and 1330X 1015 $\textrm{mm}^2$ exposure area, has the followingcharacteristics. The glass stage can be inclined by 80 degrees at vertical structure to load substrate withsafety on it. When the glass stage is the vertical state, the gap control, alignment control and exposureof ultra violet are executed. So, it enhances the pattern uniformity by minimizing the mask's warp. Theglass stage can also control the gap between the mask and the substrate by the coarse and fine motioncontrol. The mask stage can adjust the posture of photomask to the position of substrate by imageprecessing method. The galss stage for the gap control and the mask stage for the alignment aredesigned independently for each function.