• Korean Journal of Materials Research
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• v.23 no.3
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• pp.155-160
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• 2013

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93) were prepared on glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substrate temperature of $350^{\circ}C$. The effects of the sputtering power on the structural, morphological, electrical, and optical properties of MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, $Ga_2O_3$, or $ZnGa_2O_4$. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputtering power increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as the sputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin films showed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power. MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrier concentration ($4.71{\times}10^{20}cm^{-3}$), charge carrier mobility ($10.2cm^2V^{-1}s^{-1}$) and a minimum resistivity ($1.3{\times}10^{-3}{\Omega}cm$). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80 % in the visible region and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from 270 nm to 340 nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from 3.74 eV to 3.92 eV with the change in the sputtering power.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.06a
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• pp.8-8
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• 2001

초고속 증착은 짧은 시간에 박막 형성을 가능하게 하므로 window glass 코팅등의 대면적 코팅에 있어서 비용을 절감 시키고, 대량생산을 가능하게 만들기 때문에 관심이 집중되고 있다. 고속증착 공정으로는 high current arc, laser arc, hollow cathode discharge ion plating 그리고 마그네트론 스퍼터링법 등이 있다. 특별히 마그네트론 스퍼터링법은 3m이상의 넓이에 코팅을 할때 두께가 매우 균일하며, 증착율은 evaporation 공정에 비해 경제적, 기능적인 면에서 효율적이다. 그리고 증착된 박막은 매우 조밀하고 좋은 밀착력을 갖고 있으며, 고융점 금속을 포함하여 금속 합금 및 혼합물의 비율을 조정 및 금속 산화물, 질화물, 탄화물 등과 같은 금속의 증착도 stoichiometry를 조정하여 박막을 합성 시키는데 있어서 효과적이다. 이러한 초고속 증착을 만들기 위한 마그네트론 스퍼터링법의 요건은 마그네트론 원이 높은 타켓 power density를 가져야 하며, 타켓에서 효율적으로 플라즈마를 구속하여 스퍼터 되는 이온의 양을 최대화 시킬 수 있어 한다. 따라서 본 실험에서는 초고속 증착을 위해서 직경 50mm 타켓의 UBM magnetron원을 설계 제작하였다. 고밀도의 플라즈마를 형성시키기 위해서, Poisson simulation c code를 이용하여 자기장의 방향, 세기 및 밀도를 측정 하였고, 자기장 측정기(Gauss meter)를 이용하여 실제 자장을 측정 비교 분석하였다. 상기의 data를 바탕으로 여러 형상의 마그네트론원을 설계, 제작하였고. 마그네트론 원의 특성 분석을 위해 I-V 방전 특성을 평가하였고 substrate ion current density와 박막의 증착율을 측정하였다.duty-on 시간의 증가에 따라 $Cr_2N$ 상의 형성이 점점 많아져 80% duty-on 시간 경우에는 거의 CrN과 $Cr_2N$ 상이 공존하는 것으로 나타났다. 또한 duty-on 시간이 증가할수록 회절피크의 세기가 증가하여 결정화가 더 많이 진행되어짐을 알 수 있었다. 마찬가지로 바이어스 펄스이 주파수에 다른 결정성의 변화도 펄스의 주파수가 증가할수록 박막이 결정성이 좋아지고 $Cr_2N$ 상이 쉽게 형성되었다. 증착 진공도에 따른 결정성은 상대적으로 질소의 농도가 높은 낮은 진공도에서는 CrN 상이 주로 형성되었으며, 반대로 높은 진공도에서는 $Cr_2N$ 상이 많이 만들어졌다. 즉 $1.3{\times}10^{-2}Torr$의 증착 진공도에서는 CrN 상만이 보이는 반면 $9.0{\tiems}1-^{-2}Torr$ 진공도에서부터 $Cr_2N$ 상이 형성되기 시작하여 $5.0{\tiems}10^{-2}Torr$ 진공도에서는 두개의 상이 혼재되어 있음을 알 수 있었다. 박막의 내마모성을 조사한 결과 CrN 박막의 마찰 계수는 초기에 급격하게 증가한 후 0.5에서 0.6 사이의 값으로 큰 변화를 보이지 않았으며, $Cr_2N$ 박막도 비슷한 거동을 보였다.차 이, 목적의 차이, 그리고 환경의 의미의 차이에 따라 경관의 미학적 평가가 달라진 것으로 나타났다.corner$적 의도에 의한 경관구성의 일면을 확인할수 있지만 엄밀히 생각하여 보면 이러한 예의 경우도 최락의 총체적인 외형은 마찬가지로 $\ulcorner$순응$\lrcorner$

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.8
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• pp.17-27
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• 2000

This paper presents deposition and characterization of hydrogenated microcrystalline silicon (${\mu}c$ -Si:H) films on low cost glass substrate by Hot Wire CVD(HWCVD). The HWCVD ${\mu}c$ -Si:H films had deposition rates ranging from 2${\AA}$/sec to 35${\AA}$/sec with the variations of preparation conditions, which was 10 times higher than that of the films obtained from the conventional PECVD method. From the Raman spectroscopy, the prepared silicon films were found to be composed of the mixture of crystalline and amorphous phases. The crystalline volume fraction and average crystallite size, obtained from the Raman To mode peak near 520cm$^{-1}$, were 37-63% and 6-10 nm, respectively. The conductivity activation energy($E_a$) of the ${\mu}c$ -Si:H films, representing the difference of conduction band and Fermi level in an intrinsic semiconductors, increased from 0.22eV to 0.68eV with increasing pressure from 30mTorr to 300mTorr. The increase of $E_a$ with pressure indicates that the deposited films have properties close to intrinsic semiconductors, which is also proved with low dark conductivity of the ${\mu}c$ -Si:H deposited at 300mTorr. The tungsten concentration incorporated into films was about $6{\times}10^{16}atoms/cm^3$ in the samples prepared at wire temperature of 1800$^{\circ}C$.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.6
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• pp.1019-1026
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• 2017

The structural properties of $HfO_2$ films could be improved by calibrating the working pressure owing to the enhanced quality of a thin film. We deposited $HfO_2$ films on glass substrates by radio frequency (RF) magnetron sputtering under a base vacuum pressure lower than $4.5{\times}10^{-6}Pa$, RF power of 100 W, substrate temperature of $300^{\circ}C$. The working pressures were varied from 1 mTorr to 15 mTorr. Subsequently, their structural and optical properties were investigated. In particular, the $HfO_2$ film deposited at 1 mTorr had superior properties than the others, with a crystallite size of 10.27 nm, surface roughness of 1.173 nm, refractive index of 2.0937 at 550 nm, and 84.85 % transmittance at 550 nm. These results indicate that the $HfO_2$ film deposited at 1 mTorr is suitable for application in transparent electric devices.

• KSBB Journal
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• v.9 no.3
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• pp.239-245
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• 1994

The effects of reaction temperature and the level of hydration(water activity) were studied for gas phase reactions of alcohol oxidase and alcohol dehydrogenase immobilized on DEAE-cellulose and controlled pore glass(CPG). Optimum reaction temperature zone of gas phase reaction was similar to that of aqueous phase reaction. The activity of alcohol oxidase increased dramatically and the stability decreased when the water activity was increased from 0.3 to 0.8. The apparent activation energies of the gas phase reaction decreased approaching the values obtained in the aqueous phase reaction as the water activity increased. In the both cases of alcohol oxidase and alcohol dehydrogenase, the rate constants of the gas phase reaction were lower than those of aqueous phase reaction by two orders of magnitude and these results could be correlated to the vapor-liquid equilibrium data of the substrate, ethanol.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.5
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• pp.227-231
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• 2010

Super hydrophilic $TiO_2$ thin films with photocatalytic property were successfully fabricated on a glass substrate by liquid phase deposition (LPD). The $TiO_2$ thin film formed nano particles on a surface at $70^{\circ}C$. As an immersion time in $TiF_4$ solution increased, the thickness of thin films gradually increased. $TiO_2$ thin film showed a water contact angel of below ca. $5^{\circ}$ and the transmittance of ca. 75~90 % in visible range. In addition, $TiO_2$ thin film showed the photocatalytic property to decompose methyl orange solution by the illumination of UV light. The surface morphologies, optical properties and contact angel of prepared thin films with a different immersion time were measured by field emission scanning electron microscope (FE-SEM), atomic force microscope (AFM), UV-Vis spectrophotometer and contact angle meter.

• Journal of the Korean Chemical Society
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• v.37 no.6
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• pp.570-576
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• 1993

1-, 3-, 9-, and 21-Monolayer Langmuir-Blodgett(LB) films of stearic acid were deposited on silver-coated glass slides at the surface pressure of 30 mN/m. Fourier transform infrared(FTIR) reflection-absorption spectra (RAS) of these LB films were recorded at various temperatures from 31 to $72^{\circ}C.$ The spectra at $31^{\circ}C$ exhibited characteristic features of highly perpendicular orientation of the hydrocarbon chain. In the 1-monolayer LB film, the C=O stretching band was not observed, presumably due to the image dipole effect on the silver surface. In the 1-and 3-monolayer LB films, the trans isomer of stearic acid was prominent, but the cis isomer was dominant in the 21-monolayer LB film. FTIR-RAS measurements at an elevated temperature indicated that the chain melting temperature increases and approached to the bulk melting point with increasing the number of monolayer, except for the 1-monolayer LB film which has a higher melting temperature than the 3-monolayer film due to the strong interaction with the silver substrate.

• Journal of Adhesion and Interface
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• v.2 no.3
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• pp.25-32
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• 2001

Ethyl cyanoacrylate (ECA) is used as an instant adhesive, and it can be readily polymerized by moisture in air without any initiator and applied for industrial products and ohome use. However, pure ECA monomer is low-viscosity liquid at room temperature that flows into substrate surface. To thicken the instant adhesive, poly(methyl methacylate)(PMMA) is often added in it commercially. Another disadvantage of instant adhesive polymer is its brittleness In this study, functional polymers including PMMA for an additive of ECA were prepared to increase viscosity of the monomer and flexibility of the adhesive atthe same time The additives, P(MMA-VAc-EVE), were synthesized by radical copolymerization of MMA with VAc and EVE having low glass transition temperature (Tg). The additives were added to ECA to get functional instant adhesives. The chemical structures of the additives and ECA polymers were confirmed by $^1H$ NMR and FTIR, and their physical and mechanical properites were also evaluated. The Tg of the obtained additives decreased with increasing the content of VAc or VAc-EVE, indicating more improved flexibility. In addition, functional instant adhesive containing the additives showed higher bonding strength than that of the existing one.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.178-184
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• 2001

Transparent and highly oriented KLN thin films have been grown by an rf- magnetron sputtering deposition method. A homogeneous and stable KLN target was prepared by calcine and sintering process. For KLN target, stoichiometry and composition excess with K of 30% and 60%, and Li of 15% and 30% respectively, was prepared. The targets were sintered at low temperature to prevent vaporization of K and Li. KLN thin films were fabricated by rf-magnetron sputtering method using those targets. In this experiment, using the target of composition excessed with K of 60% and Li of 30%, single phase KLN thin film was produced. KLN thin film has excellent crystallinity and highly c-axis oriented on Corning 1737 substrate. Transmittance of thin film in visible range was 90%, absorption edge is 333 nm and refractive index at 632.8 nm was 1.93.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.2
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• pp.17-28
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• 2012

It is known that thermo-mechanical properties of solder material and molding compound in WB-PBGA packages are considerably affected by not only temperature but elapsed time. In this paper, finite element analysis (FEA) taking material nonlinearity into account was performed for more reliable prediction on deformation behavior of a lead-free WB-PBGA package, and the results were compared with experimental results from moire interferometry. Prior to FEA on the WB-PBGA package, it was carried out for two material layers consisting of molding compound and substrate in terms of temperature and time-dependent viscoelastic effects of molding compound. Reliable deformation analysis for temperature change was then accomplished using viscoplastic properties for solder ball and viscoelastic properties for molding compound, and the analysis was also verified with experimental results. The result showed that the deformation of WB-PBGA packages was strongly dependent on material model of molding compound; thus, temperature and time-dependent viscoelastic behavior must be considered for the molding compound analysis. In addition, viscoelastic properties of B-type molding compound having comparatively high glass transition temperature of $135^{\circ}C$ could be recommended for reliable prediction on deformation of SAC lead-free WB-PBGA packages.