• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.14 no.5
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• pp.438-443
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• 2021

This paper uses a multiplex deposition sputter system and aims to improve transmittance and reduce production costs by depositing a CdS thin film on an ITO glass substrate. When manufacturing CdS thin films, we wanted to find excellent conditions when manufacturing solar cells by changing heat treatment time. It was observed that thickness and sheet resistance were not significantly different depending on heat treatment time changes. The specific resistance was measured from a minimum of 6.68 to a maximum of 6.98. When the heat treatment time was more than 20 minutes, the transmittance was measured to be more than 75%. When the heat treatment time was 10 minutes, the bandgap was 3.665 eV and more than 20 minutes was 3.713 eV, which was measured as the same result. The XRD analysis showed that the structure of CdS was hexagonal and only CdS thin films were deposited without any other impurities. The result of calculating the FWHM was a maximum of 0.142 when the heat treatment time was 20 minutes, and a minimum of 0.133 when the heat treatment time was 40 minutes, so there was no significant difference in the FWHM when the heat treatment time was changed. The particle size was measured at 11.65 Å when the heat treatment time was 40 minutes, and at 10.93 Å when the heat treatment time was 20 minutes.

• Korean Journal of Materials Research
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• v.31 no.2
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• pp.75-83
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• 2021

To cope with automobile exhaust gas regulations, ISG (Idling Stop & Go) and charging control systems are applied to HEVs (Hybrid Electric Vehicle) for the purpose of improving fuel economy. These systems require quick charge/discharge performance at high current. To satisfy this characteristic, improvement of the positive electrode plate is studied to improve the charge/discharge process and performance of AGM(Absorbent Glass Mat) lead-acid batteries applied to ISG automotive systems. The bonding between grid and A.M (Active Material) can be improved by applying the Sand-Blasting method to provide roughness to the surface of the positive grid. When the Sand-Blasting method is applied with conditions of ball speed 1,000 rpm and conveyor speed 5 M/min, ideal bonding is achieved between grid and A.M. The positive plate of each condition is applied to the AGM LAB (Absorbent Glass Mat Lead Acid Battery); then, the performance and ISG life characteristics are tested by the vehicle battery test method. In CCA, which evaluates the starting performance at -18 ℃ and 30 ℃ with high current, the advanced AGM LAB improves about 25 %. At 0 ℃ CA (Charge Acceptance), the initial charging current of the advanced AGM LAB increases about 25 %. Improving the bonding between the grid and A.M. by roughening the grid surface improves the flow of current and lowers the resistance, which is considered to have a significant effect on the high current charging/discharging area. In a Standard of Battery Association of Japan (SBA) S0101 test, after 300 A discharge, the voltage of the advanced AGM LAB with the Sand-Blasting method grid was 0.059 V higher than that of untreated grid. As the cycle progresses, the gap widens to 0.13 V at the point of 10,800 cycles. As the bonding between grid and A.M. increases through the Sand Blasting method, the slope of the discharge voltage declines gradually as the cycle progresses, showing excellent battery life characteristics. It is believed that system will exhibit excellent characteristics in the vehicle environment of the ISG system, in which charge/discharge occurs over a short time.

• Journal of Industrial Convergence
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• v.21 no.8
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• pp.35-42
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• 2023

Recently, electronic devices with bendable electronic devices based on flexible substrates are being sold, and therefore, the purpose of this study is to evaluate the possibility of flexible substrates of conductive transparent tapes. As a transparent electrode, carbon nanotube (CNT) was formed by the coating method developed by the research team, and samples coated up to 5 times were fabricated. The surface resistance and transmittance of the substrate were measured, and both resistance and transmittance decreased as the number of CNT coatings increased. After the tape was detached from the glass, the surface resistance slightly increased in all samples, and the transmittance increased by about 10% in all measured wavelength ranges because the glass was removed. Next, the tape coated with CNT twice was used to a bending test 20,000 times under the condition of a radius of curvature of 2 mm. The electrical and optical properties before and after bending did not change, which means that there was no change in CNT properties due to bending.

• KSBB Journal
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• v.21 no.5
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• pp.325-330
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• 2006

This study presents the characterization of an integrated portable microfluidic electrical detection system for fast and low volume immunoassay using polystyrene microbead, which are used as immobilization surfaces. In our chip, a filtration method using the microbead was adopted for sample immobilization and immunogold silver staining(IGSS) was used to increase the electrical signal. The chip is composed of an inexpensive and biocompatible Polydimethylsiloxane(PDMS) layer and Pyrex glass substrate. Platinum microelectrodes for electric signal detection were fabricated on the substrate and microchannel and pillar-type microfilters were formed in the PDMS layer. With a fabricated chip, we reacted antigen and antibody according to the procedures. Then, silver enhancer was injected to increase the size of nanogold particles tagged with the second antibody. As a result, microbeads were connected to each other and formed an electrical bridge between microelectrodes. Resistance measured through the electrodes showed a difference of two orders of magnitude between specific and nonspecific immuno-reactions. The detection limit was 10 ng/ml. The developed immunoassay chip reduced the total analysis time from 3 hours to 50 min. Fast and low-volume biochemical analysis has been successfully achieved with the developed microfilter and immuno-sensor chip, which is integrated to the microfluidic system.

• Korean Journal of Materials Research
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• v.4 no.6
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• pp.715-722
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• 1994

Thermochromic $Vo_{2}$ thin films for "smart windows" were prepared by electron beam evaporationmethod on a glass substrate and spectral transmittances were examined by spectrophotometer. Substratetemperature of $300^{\circ}C$ and annealing temperature of $400^{\circ}C$ were found to be effective to give athermochromism on $Vo_{2}$ thin film due to the crystallization of the thin film. Furthermore, annealing of$Vo_{2}$ thin film affected the spectral transmittance and reduced the transmittance significantly at wavelengthbelow 500nm.$V_{0.95}W_{0.05}O_{2}$ thin film doped by 5 atomic percent of W showed semiconductor-metal transition around 0$0^{\circ}V_{0.995}W_{0.005}O_{2}$thin film which contains 0.5 atomic percent Sn showed therrnochrornisrn when it was depositedat substrate temperature of $300^{\circ}C$ and annealed at $450^{\circ}C$ for 5 hours in argon gas. The transitiontemperature of the $V_{0.995}W_{0.005}O_{2}$ thin film was found to be about $25^{\circ}C$ and showed some hysterisis. and showed some hysterisis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.4
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• pp.158-163
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• 2011

$CuInS_2$ thin films were prepared using a sol-gel spin-coating method. That makes large scale substrate coating, simple equipment, easy composition control available. The structural and optical properties of $CuInS_2$ thin films that include less toxic materials (S) instead of Se, tetragonal chalcopyrite structure. Copper acetate monohydrate ($Cu(CH_3COO)_2{\cdot}H2O$) and indium acetate ($In(CH_3COO)_3$) were dissolved into 2-propanol and l-propanol, respectively. The two solutions were mixed into a starting solution. The solution was dropped onto glass substrate, rotated at 3000 rpm, and dried at $300^{\circ}C$ for Cu-In as-grown films. The as-grown films were sulfurized inside a graphite container box and chalcopyrite phase of $CuInS_2$ was observed. To determine the optical properties measured optical transmittance of visible light region (380~770 nm) were less than 30 % in the overall. The XRD pattern shows that main peak was observed at Cu/In ratio 1.0 and its orientation was (112). As annealing temperature increases, the intensity of (112) plane increases. The unit cell constant are a = 5.5032 and c = 11.1064 $\AA$, and this was well matched with JCPDS card. The optical transmittance of visible region was below than 30 %.

• Journal of the Korean Magnetics Society
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• v.14 no.1
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• pp.52-57
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• 2004

In this research, characteristics of air core rectangular spiral type inductors of ㎓ band are numerical analyzed. The basic structure of inductors is a rectangular spiral having 390${\mu}{\textrm}{m}$${\times}$390${\mu}{\textrm}{m}$ size, 5.5 turns, line width of 10 ${\mu}{\textrm}{m}$ and line space of 10 ${\mu}{\textrm}{m}$. Frequency characteristics were simulated up to 10 ㎓. The substrate was modeled as Si, Sapphire, glass and GaAs and the conductor as Cu. The thickness of the conductor was fixed at 2. The number of turns was n.5 to make the input and output terminals to be on the opposite sides. The initial inductance of the basic inductor structure was 13.0 nH, maximum inductance 60.0 nH and resonance frequency 4.25 ㎓. As the dielectric constant of the substrate was increased, the initial inductance varied only slightly, but the resonance frequency decreased considerably. As the number of turns was varied from 1.5 to 9.5, the initial inductance was increased linearly from 2.9 nH to 15.9 nH and, then, saturated at 16.9 nH. The Q factor increased only slightly. The line width and line space of inductors were varied from 5 ${\mu}{\textrm}{m}$ to 20 ${\mu}{\textrm}{m}$, which resulted in the decrease of the initial and maximum inductances. But the resonance frequency was increased. Q factor displayed an increase and a decrease, respectively, when the line width and line space were increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.399-399
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• 2008

Synthesis and characterization of ZnO structure such as nanowires, nanorods, nanotube, nanowall, etc. have been studied to multifunctional application such as optical, nanoscale electronic and chemical devices because it has a room-temperature wide band gap of 3.37eV, large exiton binding energy(60meV) and various properties. Various synthesis methods including chemical vapor deposition (CVD), physical vapor deposition, electrochemical deposition, micro-emulsion, and hydrothermal approach have been reported to fabricate various kinds of ZnO nanostructures. But some of these synthesis methods are expensive and difficult of mass production. Wet chemical method has several advantage such as simple process, mass production, low temperature process, and low cost. In the present work, ZnO nanorods are deposited on ITO/glass substrate by simple wet chemical method. The process is perfomed by two steps. One-step is deposition of ZnO seeds and two-step is growth of ZnO nanorods on substrates. In order to form ZnO seeds on substrates, mixture solution of Zn acetate and Methanol was prepared.(one-step) Seed layers were deposited for control of morpholgy of ZnO seed layers by spin coating process because ZnO seeds is deposited uniformly by centrifugal force of spin coating. The seed-deposited samples were pre-annealed for 30min at $180^{\circ}C$ to enhance adhesion and crystallinnity of ZnO seed layer on substrate. Vertically well-aligned ZnO nanorods were grown by the "dipping-and-holding" process of the substrates into the mixture solution consisting of the mixture solution of DI water, Zinc nitrate and hexamethylenetetramine for 4 hours at $90^{\circ}C$.(two-step) It was found that density and morphology of ZnO nanorods were controlled by manipulation of ZnO seeds through rpm of spin coating. The morphology, crystallinity, optical properties of the grown ZnO nanostructures were carried out by field-emission scanning electron microscopy, high-resolution electron microscopy, photoluminescence, respectively. We are convinced that this method is complementing problems of main techniques of existing reports.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.4
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• pp.11-15
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• 2001

In this paper, hermetic sealing technology was studied for wafer level packaging of the RF-MEMS devices. With the flip-chip bonding method. this non-conductive B-stage epoxy sealing will be profit to the MEMS device sealing. It will be particularly profit to the RF-MEMS device sealing. B-stage epoxy can be cured by 2-step and hermetic sealing can be obtained. After defining 500 $\mu\textrm{m}$-width seal-lines on the glass cap substrate by screen printing, it was pre-baked at $90^{\circ}C$ for about 30 minutes. It was, then, aligned and bonded with device substrate followed by post-baked at $175^{\circ}C$ for about 30 minutes. By using this 2-step baking characteristic, the width and the height of the seal-line could be maintained during the sealing process. The height of the seal-line was controlled within $\pm$0.6 $\mu\textrm{m}$ in the 4 inches wafer and the bonding strength was measured to about 20MPa by pull test. The leak rate, that is sealing characteristic of the B-stage epoxy, was about $10^{-7}$ cc/sec from the leak test.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.1
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• pp.6-13
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• 2010

In this study, Ga-doped ZnO (GZO) thin films have been fabricated on Eagle 2000 glass substrates at various substrate temperatures $100{\sim}400^{\circ}C$ and thin film thickness by RF magnetron sputtering in order to investigate the structural, electrical, and optical properties of the GZO thin films. It is observed that all the thin films exhibit c-axis orientation and a (002) diffraction peak only. The GZO thin films, which were deposited at $T=300^{\circ}C$ and 400 nm, shows the highest (002) orientation, and the full width at half maximum (FWHM) of the (002) diffraction peak is $0.4^{\circ}$. AFM analysis shows that the formation of relatively smooth thin films are obtained. The lowest resistivity ($8.01{\times}10^{-4}\;{\Omega}cm$) and the highest carrier concentration ($3.59{\times}10^{20}\;cm^{-3}$) are obtained in the GZO thin films deposited at $T=300^{\circ}C$ and 400 nm. The optical transmittance in the visible region is approximately 80 %, regardless of process conditions. The optical band-gap shows the slight blue-shift with increase in doping which can be explained by the Burstein-Moss effect.