• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1340-1343
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• 2007

We have simultaneously fabricated LTPS TFTs and integrated photodiodes on the same glass substrates without any additional LTPS process. The structure of an integrated photodiode is a lateral p-i-n diode with a gate. The performances of a photodiode were improved at a negative gate voltage.

• Journal of Power Electronics
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• 제18권2호
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• pp.395-406
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• 2018

Marine controlled-source electromagnetic transmitters (MCSETs) are important in marine electromagnetic exploration systems. They play a crucial role in the exploration of solid mineral resources, marine oil, and gas and in marine engineering evaluation. A DC-DC controlled-source circuit is typically used in traditional MCSETs, but using this circuit in MCSETs causes several problems, such as large voltage ringing of the high-frequency diode, heating of the insulated-gate bipolar transistor (IGBT) module, high temperature of the high-frequency transformer, loss of the duty cycle, and low transmission efficiency of the controlled-source circuit. This paper presents a clamping-diode circuit for MCSET (CDC-MCSET). Clamping diodes are added to the controlled-source circuit to reduce the loss of the duty ratio and the voltage peak of the high-frequency diode. The temperature of the high-frequency diode, IGBT module, and transformer is decreased, and the service life of these devices is prolonged. The power transmission efficiency of the controlled-source circuit is also improved. Saber simulation and a 20 KW MCSET are used to verify the correctness and effectiveness of the proposed CDC-MCSET.

• 대한전기학회논문지
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• 제33권4호
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• pp.157-163
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• 1984

The object of this paper is to investigte the gate controlled diode structure for ionic concentration measurement. It includes device fabrication, characterization, device physics and modeling of the gate controlled diode structure. The differences of turn on voltages and surface generation currents in the (100) and (111) silicon crystallographic orientation of the sample device were observed. Therefore the dependence of these two factors of the silicon crystallographic orientation was investigated. It was observed that drifts arose after extended immersion of the sample device in acid or base solutions. The surface generation-recombination velocity of both (100) and (111) increased. The increase in the interfacial traps for both surface, determined by the turn on voltage was directly proportional to the surface generation-recombination velocity increase.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2003년도 ICCAS
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• pp.1885-1890
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• 2003

In this paper, we have developed the voltage controlled crystal oscillator (VCXO) with positive emitter coupled logic(PECL). The VCXO is a crystal oscillator which includes a varactor diode and associated circuitry allowing the frequency to be changed by application of a voltage across that diode. The characteristics of the PECL has the delay time less than 2 ns and the faster logic gate, and the high level output greater than 2.3 V and the low level output smaller than 1.68 V.

• Journal of Power Electronics
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• 제17권2호
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• pp.570-578
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• 2017

This paper proposes a method to stabilize the output voltage of the secondary side of an Inductive Power Transfer (IPT) system through tuning/detuning via a serial tuned DC Voltage-controlled Variable Capacitor (DVVC). The equivalent capacitance of the DVVC changes with the conduction period of a diode in the DVVC controlled by DC voltage. The output voltage of an IPT system can be made constant when this DVVC is used as a variable resonant capacitor combined with a PI controller generating DC control voltage according to the fluctuations of the output voltage. Since a passive diode instead of an active switch is used in the DVVC, there are no active switch driving problems such as a separate voltage source or gate drivers, which makes the DVVC especially advantageous when used at the secondary side of an IPT system. Moreover, since the equivalent capacitance of the DVVC can be controlled smoothly with a DC voltage and the passive diode generates less EMI than active switches, the DVVC has the potential to be used at much higher frequencies than traditional switch mode capacitors.

• 대한전자공학회논문지
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• 제27권11호
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• pp.1-8
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• 1990

4개의 Quantum well을 갖는 GRINSCH InGaAs/Inp Buried Heterostructure의 laser diode 12개로 구성되어 있는 12-laser diode array를 제작하여, 각 laser diode의 전자 흡수 영역의 인가 전압에 의하여 lasing 작용을 조절할 수 있는 가능성을 조사하였다. 12개의 V가 홈을 갖는 Si V-groove와 12개의 광섬유를 이용하여 12-laser diode array의 빛출력을 coupling하여 전자 흡수영역의 인가 전압의 변화에 따른 각 laser diode의 여러특성을 조사하였다. 마지막으로 12-laser diode array와 Si V-Groove와 광섬유를 이용하여 디지털 논리 gate들로 구성되어 있는 전자 회로 board들 간의 광대역 근거리 통신 및 B-ISDN을 위한 central office와 가입자 간의 통신을 구현하는 방법에 대하여 생각해 보았다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.746-748
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• 1993

To overcome the problem of the diode reverse recovery in high switching frequency inverter, a new gate drive scheme is proposed for IGBT in this paper. Using this circuit, the reverse recovery current can be controlled and faster switching time can be achieved for hard switching inverter. The over-current protection method, which is suitable for the proposed gate driver, is also presented. The operation of the proposed circuit is investigated and its usefulness is verified through the experimental results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.10-10
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• 2010

ESD (Electrostatic Discharge) phenomenon occurs in everywhere and especially it damages to semiconductor devices. For ESD protection, there are some devices such as diode, GGNMOS (Gate-Grounded NMOS), SCR (Silicon-Controlled Rectifier), etc. Among them, diode and GGNMOS are usually chosen because of their small size, even though SCR has greater current capability than GGNMOS. In this paper, a novel SCR is proposed on the SOI (Silicon-On-Insulator) structure which has $1{\mu}m$ film thickness. In order to design and confirm the proposed SCR, TSUPREM4 and MEDICI simulators are used, respectively. According to the simulation result, although the proposed SCR has more compact size, it's electrical performance is better than electrical characteristics of conventional GGNMOS.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(1)
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• pp.421-424
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• 2001

In this paper, We have designed and fabricated VCO in two way, the common source and common gate circuit for I local oscillator of 60 GHz wireless LAN system. The VCO employed a GaAs MESFET for negative resistance and a varactor diode for frequency tuning. The common gate VCO was measured the phase noise -112 dBc/Hz at the 1 MHz frequency offset. The output power and the second harmonic frequency suppression were 7.81 dBm and -29.3 dBc when tuning voltage was 3V, respectively. The total size of VCO was 28.6$\times$12.14 $\textrm{mm}^2$.

• 전자공학회논문지A
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• 제29A권7호
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• pp.56-63
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• 1992

A measurement technique of the surface generation velocity S$_o$ using the BC(buried channel) MOS structure with shallow and low doped channel layer (BC MOS S$_o$ measurement technique) is presented and verified analytically and experimentally. Using this measurement technique, S$_o$ can be measured more accurately than that measured using the gate-controlled diode SS1oT measurement technique. When S$_o$ is measured for the two techniques from a BC MOS structure test patten with gate length of 171$\mu$m, the results are 0,66cm/sec and 0.28cm/sec for the former and the latter respectively.