• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.120-120
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• 2011

Graphene is a carbon based material and it has great potential of being utilized in various fields such as electronics, optics, and mechanics. In order to develop graphene-based logic systems, graphene field-effect transistor (GFET) has been extensively explored. GFET requires supporting devices, such as volatile memory, to function in an embedded logic system. As far as we understand, graphene has not been studied for volatile memory application, although several graphene non-volatile memories (GNVMs) have been reported. However, we think that these GNVM are unable to serve the logic system properly due to the very slow program/read speed. In this study, a GVM based on the GFET structure and using an engineered graphene channel is proposed. By manipulating the deposition condition, charge traps are introduced to graphene channel, which store charges temporarily, so as to enable volatile data storage for GFET. The proposed GVM shows satisfying performance in fast program/erase (P/E) and read speed. Moreover, this GVM has good compatibility with GFET in device fabrication process. This GVM can be designed to be dynamic random access memory (DRAM) in serving the logic systems application. We demonstrated GVM with the structure of FET. By manipulating the graphene synthesis process, we could engineer the charge trap density of graphene layer. In the range that our measurement system can support, we achieved a high performance of GVM in refresh (>10 ${\mu}s$) and retention time (~100 s). Because of high speed, when compared with other graphene based memory devices, GVM proposed in this study can be a strong contender for future electrical system applications.

• Korean Journal of Materials Research
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• v.10 no.2
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• pp.160-165
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• 2000

We have investigated the electrical and diffusion barrier properties of MgO produced on the surface of Cu (Mg) alloy. Also the diffusion barrier property of the interfacial MgO between Cu alloy and $SiO_2$ has been examined. The results show that the $150\;{\AA}$-MgO layer on the surface remains stable up to $700^{\circ}C$, preventing the interdiffusion of C Cu and Si in Si/MgO/Cu(Mg) structure. It also has the breakdown voltage of 4.5V and leakage current density of $10^{-7}A/\textrm{cm}^2/$. In addition, the combined structure of $Si_3N4(100{\AA})/MgO(100{\AA})$ increases the breakdown voltage up to lOV and reduces the leakage current density to $8{\tiems}10^{-7}A/\textrm{cm}^2$. Furthermore, the interfacial MgO formed by the chemical reac­t tion of Mg and $SiO_2$ reduces the diffusion of copper into $SiO_2$ substrate. Consequently, Cu(Mg) alloy can be applied as a g gate electrode in TFT /LCDs, reducing the process steps.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.15 no.1
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• pp.39-50
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• 2003

This study aims to figure out water quality impacts due to sudden disturbances of sediments during dike construction in land reclamation for the northern part of the Siwhaho Lake where heavily deteriorated settlements from upstream loadings are outstanding. We exploit a 3-D water quality model CE-QUAL-ICM combined with a hydrodynamic model TIDE3D. Simulations are done accounting water-sediment interaction in a 4-$\sigma$ layers. Long-term simulation for 1-year shows that bottom layers around the disturbance location are only affected and marks very high concentration. Complete vertical mixing appears at least 5km apart to downward due to complex effects of geometry, bathymetry and river inflows. It should be addressed that existing condition of the Siwhaho Lake stands for high concentration of COD and TP in winter and spring due to relatively high incoming loadings, however the effect of sediment disturbances yields reverse phenomena, i.e., impacts of dike construction arise greatly in summer and fall. Refined grid system consisting of 150m${\times}$150m rectangular grid, which is doubled system compared to previous study (Suh et al.,2002), gives affordable results by reducing flux differences through a cell especially in front of gate.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.156-156
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• 2000

Recently, the surface electronic states have attracted much attention since their standing wave patterns created around steps, defects, and adsorbates on noble metal surfaces such as Au(111), Ag(110), and Cu(111) were observed by scanning tunneling microscopy (STM). As a typical example, a striking circular pattern of "Quantum corral" observed by Crommie, Lutz, and Eigler, covers a number of text books of quantum mechanics, demonstrating a wavy nature of electrons. After the discoveries, similar standing waves patterns have been observed on other metal and demiconductor surfaces and even on a side polane of nano-tubes. With an expectation that the surface states could be utilized as one of ideal cases for studying two dimensionakl (sD) electronic system, various properties, such as mean free path / life time of the electronic states, have been characterized based on an analysis of standing wave patterns, . for the 2D electron system, electron density is one of the most importnat parameters which determines the properties on it. One advantage of conventional 2D electron system, such as the ones realized at AlGaAs/GaAs and SiO2/Si interfaces, is their controllability of the electrondensity. It can be changed and controlled by a factor of orders through an application of voltage on the gate electrode. On the other hand, changing the leectron density of the surface-state 2D electron system is not simple. On ewqy to change the electron density of the surface-state 2D electron system is not simple. One way to change the electron density is to deposit other elements on the system. it has been known that Pd(111) surface has unoccupied surface states whose energy level is just above Fermi level. Recently, we found that by depositing Pd on Cu(111) surface, occupied surface states of Cu(111) is lifted up, crossing at Fermi level around 2ML, and approaches to the intrinsic Pd surface states with a increase in thickness. Electron density occupied in the states is thus gradually reduced by Pd deposition. Park et al. also observed a change in Fermi wave number of the surface states of Cu(111) by deposition of Xe layer on it, which suggests another possible way of changing electron density. In this talk, after a brief review of recent progress in a study of standing weaves by STM, I will discuss about how the electron density can be changed and controlled and feasibility of using the surface states for a study of 2D electron system. One of the most important advantage of the surface-state 2D electron system is that one can directly and easily access to the system with a high spatial resolution by STM/AFM.y STM/AFM.

• Journal of Radiation Industry
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• v.6 no.1
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• pp.31-40
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• 2012

There are two methods to fabricate the readout electronic to a large-area CMOS image sensor (LACIS). One is to design and manufacture the sensor part and signal processing electronics in a single chip and the other is to integrate both parts with bump bonding or wire bonding after manufacturing both parts separately. The latter method has an advantage of the high yield because the optimized and specialized fabrication process can be chosen in designing and manufacturing each part. In this paper, LACIS chip, that is optimized design for the latter method of fabrication, is presented. The LACIS chip consists of a 3-TR pixel photodiode array, row driver (or called as a gate driver) circuit, and bonding pads to the external readout ICs. Among 4 types of the photodiode structure available in a standard CMOS process, $N_{photo}/P_{epi}$ type photodiode showed the highest quantum efficiency in the simulation study, though it requires one additional mask to control the doping concentration of $N_{photo}$ layer. The optimized channel widths and lengths of 3 pixel transistors are also determined by simulation. The select transistor is not significantly affected by channel length and width. But source follower transistor is strongly influenced by length and width. In row driver, to reduce signal time delay by high capacitance at output node, three stage inverter drivers are used. And channel width of the inverter driver increases gradually in each step. The sensor has very long metal wire that is about 170 mm. The repeater consisted of inverters is applied proper amount of pixel rows. It can help to reduce the long metal-line delay.

• Journal of Adhesion and Interface
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• v.22 no.3
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• pp.91-97
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• 2021

By introducing an organic interlayer on the Parylene C dielectric surface, the electrical device performances and the operating stabilities of organic field-effect transistors (OFETs) were improved. To achieve this goal, hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (ODTS), as the organic interlayer materials, were used to control the surface energy of the Parylene C dielectrics. For the bare case used with the pristine Parylene C dielectrics, the field-effect mobility (μ_FET) and threshold voltage (V_th) of dinaphtho[2,3-b:2',3'-f ]thieno[3,2-b]- thiophene (DNTT) FET devices were measured at 0.12 cm²V^-1s^-1 and - 5.23 V, respectively. On the other hand, the OFET devices with HMDS- and ODTS-modified cases showed the improved μ_FET values of 0.32 and 0.34 cm²V^-1s^-1, respectively. More important point is that the μ_FET and V_th of the DNTT FET device with the ODTS-modified Parylene C dielectric presented the smallest changes during a repeated measurement of 1000 times, implying that it has the most stable operating stability. The results could be meaned that the organic interlayer, especially ODTS, effectively covers the Parylene C dielectric surface with alkyl chains and reduces the charge trapping at the interface region between active layer and dielectric, thereby improving the electrical operating stability.

• The Journal of the Petrological Society of Korea
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• v.28 no.4
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• pp.251-277
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• 2019

The Gogunsan Archipelago is composed of two island groups; the first group includes Mal-do, Myeong-do, Gwangdae-do, and Bangchuk-do islands consisting of Neoproterozoic rocks, and the second group includes Yami-do, Sinsi-do, Muneo-do, Jangja-do, and Seonyu-do islands consisting of Cretaceous rocks. The first group mainly consists of the Bangchuk formation which can be divided into two layers; the lower layer was more deformed than the upper layer. The former was intruded by mafic and felsic volcanic rocks formed in the volcanic arc tectonic setting 930-890 Ma and the latter was deposited ca. 825-800 Ma. In these islands, large scale folds with east-west fold axes were beautifully formed; the Maldo island fold was designated as natural monument and large scale beautiful chevron fold was developed on the Gwangdae-do island. In addition, there are unique zebra-shaped outcrop formed by a mixing of basic and acidic magma and Independent Gate shaped outcrop formed by coastal erosion. On the other hand, the Yami-do, Sinsi-do, Muneo-do, Jangja-do and Seonyu-do islands consist of 92-91Ma Cretaceous volcanic rocks and, in Sinsi-do island, the Nanshan formation deposited ca. 92 Ma. These Cretaceous volcanic rocks formed by melting of the continental crust by the heat supplied from the uplifting mantle due to the extension caused by a retreat of subducting ocean slab. Yami-do and Sinsi-do islands are composed of rhyolite. In Yami-do island, bands with vertical joint formed by cooling of the bottom part of the lava, are shown. In Sinsi-do island, large-scale vertical joints formed by cooling of lava flow, were developed. The Jangja-bong of Jangja-do island and Mangju-bong of Seonyu-do island are composed of brecciated rhyolite and formed a ring shaped archipelago contributing to the development of marine culture by providing natural harbor condition. They also provide beautiful views including 'Seonyu 8 views' along with other islands. As mentioned above, the Gogunsan archipelago is rich in geoheritages and associated cultural and historical resources, making it worth as a National Geopark.

• Journal of the Korean Institute of Landscape Architecture
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• v.47 no.1
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• pp.88-103
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• 2019

This paper aims to identify planting design for the renewal of Okgu Park, located in Siheung, Gyeonggi-do. I designate planting concept fit spatial functions and also suggest planting designs that are proper for a growth environment. The spatial functions of the research site are divided on the basis of the park facilities, its surroundings, and usage. To understand the planting concept, this paper looks into the distribution of plant species and the precise planting structure. To understand the planting concept and the current usage of shade space in the park, I examine the distribution of plant species and the precise planting structure. There are 48 kinds of plants, with Zoysia japonica area (28.84%), Prunus yedoensis (8.0%), Pinus thunbergii (6.73%) and Zelkova serrata (6.38%) taking up the majority. 27 places were chosen for researching the precise planting structure. The research shows that the average green coverage ratio is 38.14% and the average green capacity coefficient is $0.72m^3/m^2$. The growth defective rate of trees in the shade areas is estimated by averaging the classified growth conditions of individual trees per block of shade areas. Areas with an inferior environment for growth and low spatial usage in Okgu Park are selected as subjects for planting design. After comparing the spatial functions with planting concepts and analyzing the growth of plants, I identify $36,236m^2$ areas with inferior growth condition. I also examine structures and the surrounding areas to find areas that require urgent planting improvement, specifically identifying landscape space and shade space around the fountain and the buffer space nearby the North gate. I rearrange spatial functions in the selected areas to devise a planting design considering the existing vegetation, layer structure, and its usage. I set the planting concept and direction to improve the landscape of the selected areas through implementing a planting design so the park users can be satisfied with each space.