• 전력전자학회논문지
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• 제11권2호
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• pp.120-126
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• 2006

본 논문에서는 Multi-level PDP 구동회로의 Sustain 스위치를 구동하기 위해 Boot-strap chain 방식의 Gate driver를 제안한다. 제안된 Gate driver는 한 개의 High-side N-MOSFETS를 구동하기 위해 별도의 Floating power supply 가 필요치 않고 한 쌍의 다이오드와 캐패시터만을 사용한다. 제안 Gate driver 회로를 적용함으로서, Multi-level PDP driver의 가격과 무게 및 부피를 줄일 수 있다.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2000년도 춘계학술대회 논문집
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• pp.202-209
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• 2000

This paper introduces the main function and protection method of IGBT gate driver that designed by KOROS. Recently, the applications of insulated gate bipolar transistors(IGBTs) have expanded widely, particularly in the area of railway converters. This driver is suitable for railway traction applications, so they are designed for circumstance of railway vehicle such as vibration. The input control power for this driver is supplied from battery charger of railway. it is no necessary an isolated power supply board or auxiliary power supply, with substantial savings in cost and space in railway applications. This gate driver can be used wide range of input voltage. So, performance of the driver has no relation with the battery voltage(70V∼110V). The protection methods of IGBT gate driver have many kind of ways, but this gate driver it designed to apply to converter for railway system, so this gate driver includes protection for arm short current and low control power voltage, etc. And the process of protection method and protection reference value are optimized by means of sufficient test with our own facilities.

• 전기전자학회논문지
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• 제25권2호
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• pp.381-387
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• 2021

과거 주로 게임과 동영상 재생에 있어 리얼함을 극대화하기 위해 사용되었던 HMD(Head Mount Display)의 수요가 증가하고, 그 활용 범위가 교육과 훈련 등으로 확대되면서, 기존 HMD의 성능을 향상시킬 수 있는 방안에 대한 관심이 높아지고 있다. 본 논문에서는 HMD의 각 화소 회로에 제어 신호를 보내는 gate driver의 성능을 향상시키기 위해 CNT를 포함한 트랜지스터를 활용하는 방법에 대해 논하고자 한다. 기존 gate driver의 버퍼부를 구성하는 트랜지스터를 CNT를 포함한 트랜지스터로 교체하는 회로 설계 방법을 제안하고, 그 성능을 회로 시뮬레이션을 통해 기존 트랜지스터로만 구성된 gate driver의 성능과 비교해 보고자 한다. 시뮬레이션 결과, gate driver에 CNT를 포함할 경우 12.5 GHz의 속도로 기존 gate driver 대비 약 0.3V 증가된 출력 전압(1.1V)을 얻을 수 있었으며, 최대 20배의 gate width를 줄일 수 있었다.

• 한국과학예술포럼
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• 제20권
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• pp.421-428
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• 2015

전기/하이브리드 자동차, 도금용 정루기 등에 들어가는 전력변환장치는 SCR, MOSFET, IGBT와 같은 스위칭 소자가 필수적으로 사용되며 이를 구동하기 위해서는 Gate Driver가 역시 필수적으로 사용된다. 본 논문에서는 대용량 전력변환장치에 사용되는 스위칭소자 SCR/IGBT를 구동하는데 필요한 Gate Driver를 제안한다. 제안된 Gate Driver는 4개의 BJT를 이용한 H-Bridge를 포함하며, 이는 입력된 DC 전력을 AC로 변환하여 Transformer를 통하여 Isolate 된 전원을 생성한다. 또한 Gate 제어 신호는 입력 전원과 Isolated된 전원이 연결된 Photo Coupler를 통해 Isolate된 제어 신호로 변환하여 실제 SCR/IGBT를 구동한다. 본 논문에서는 Simulation을 통해서 설계된 555 Timer를 통한 H-Bridge 동작을 검증하며 시제품을 제작하여 27V 50,000A 급의 도금용 정류기를 구동시켜 파형을 확인함으로써 제안된 Gate Driver의 타당성을 검증한다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 B
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• pp.1355-1357
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• 2005

This paper discusses Gate-driver circuit for improved switching characteristics. This resonant gate-driver recycles the energy stored in the gate capacitance to reduce the turn-off switching loss associated with a conventional gate-driver. Reducing the loss reduces the power consumption and hence the subsequent power dissipation in the resonant gate-driver. The design considerations of implementing a practical MOSFET gate-driver using this topology are discussed.

• 한국전기전자재료학회논문지
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• 제21권3호
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• pp.272-278
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• 2008

This paper investigated the a-si:H gate driver with the stepwise gate signal. In 1-chip type mobile LCD application the stepwise gate signal for low power consumption can be used by adding simple switching circuit. The power consumption of the a-Si:H gate driver can be decreased by employing the stepwise gate signal in the conventional circuit. In conventional one, the effect of stepwise gate signal can decrease slew rate and increase the fluctuation of gate-off state voltage, In order to increase the slew rate and decrease the gate off state fluctuation, we proposed a new a-Si:H TFT gate driver circuit. The simulation data of the new circuit show that the slew rate and the gate-off state fluctuation are improved, so the circuit can work reliably.

• 전력전자학회논문지
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• 제25권2호
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• pp.87-93
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• 2020

This study proposes a gate driver that operates semiconductor switches in the bipolar pulsed power modulator. The proposed gate driver was designed to receive isolated power and synchronized signals through the gate transformer. The gate circuit has a separate delay in the on-and-off operation to prevent a short circuit between the top and bottom switches of each leg. On the basis of the proposed gate circuit, a bipolar pulsed power modulator prototype with a 2.5 kV/100 A rating was developed. Finally, the bipolar pulsed power modulator was tested under resistive load and plasma reactor load conditions. It is verified that the proposed gate driver can be applied to a bipolar pulsed power modulator.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 F
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• pp.2783-2785
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• 1999

A fast switching gate driver suitable for high performance self resonant electronic ballasts is presented. The proposed gate driver has negligible switching loss and driving loss owing to pnpn structure and zero voltage switching( ZVS ); moreover, the gate driver has frequency control capability. Therefore, a self resonant inverter using proposed gate driver can operate as external exciting resonant inverters. The experiments confirm that the proposed gate driver perform the desired operations over full power control range for 40W fluorescent lamp electronic ballast.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.822-824
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• 2007

This paper investigated a gate driver circuit with amorphous silicon for mobile TFT-LCD. In the conventional circuit, the fluctuation of the off-state voltage causes the fluctuation of gate line voltages in the panel and then image quality becomes worse. Newly designed gate driver circuit with dynamic switching inverter and carry out signal reduce the fluctuation of the off-state voltage because dynamic switching inverter is holding the off-state voltage and the delay of carry signal is reduced. The simulation results show that the proposed a-Si:H gate driver has low noise and high stability compared with the conventional one.

• International journal of advanced smart convergence
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• 제12권4호
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• pp.1-7
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• 2023

Large-size, organic light-emitting device (OLED) panels based on highly reliable gate driver circuits integrated using InGaZnO thin film transistors (TFTs) were developed to achieve ultra-high resolution TVs. These large-size OLED panels were driven by using a novel gate driver circuit not only for displaying images but also for sensing TFT characteristics for external compensation. Regardless of the negative threshold voltage of the TFTs, the proposed gate driver circuit in OLED panels functioned precisely, resulting from a decrease in the leakage current. The falling time of the circuit is approximately 0.9 ㎲, which is fast enough to drive 8K resolution OLED displays at 120 Hz. 120 Hz is most commonly used as the operating voltage because images consisting of 120 frames per second can be quickly shown on the display panel without any image sticking. The reliability tests showed that the lifetime of the proposed integrated gate driver is at least 100,000 h.