• 전력전자학회:학술대회논문집
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• 전력전자학회 2012년도 전력전자학술대회 논문집
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• pp.230-231
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• 2012

This paper describes a gate driver that operates numerous semiconductor switch in the solide-state pulsed power modulator. the proposed gate driver is designed to receive both the isolated drive-power and the on/off pulse signals through the transformer. Moreover, the IGBT-switch can be quickly turned off by adding protection circuit. Therefore it protects the IGBT-switch from the arc condition that frequently occurs in high-voltage pulse application. To comprehend operating characteristic of each IGBT-switch in pulse output condition, the device consisting of a high efficiency soft-switching capacitor charger and two series stacking IGBT-switch is developed. Finally, the relability of the proposed gate driver and the device for its test are proved through PSpice simulation and experiments.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1998년도 전력전자학술대회 논문집
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• pp.323-327
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• 1998

Under high power IGBTs Switching, a large overvoltage is induced across the IGBT module due to the stray inductance in the circuit. This paper proposes a new gate drive circuit for high power IGBTs which can actively suppress the overvoltage across the driven IGBT at turn-off while preserving the most simple and reliable power circuit. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage can be limited much effectively at the fault collector current. Experimental results under various normal and fault conditions prove the effectiveness of the proposed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.449-452
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• 1999

NiSi were formed from either Ni monolayer or Ni/Ti bilayer and the SADS method was applied to fabricated PMOSFET with Ni-polycide gate electrodes. PMOSFET made from Ni monolayer showed thermal stability unto 300~40$0^{\circ}C$ for 600sec., and excellent C-V characteristics for long time of drive-in anneal than PMOSFET made from Ni/Ti bilayer. This was attributed to easier decomposition and subsequent Ni diffusion to SiO$_2$ layer, probably due to the presence of Ti unreducing process

• 조명전기설비학회논문지
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• 제16권1호
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• pp.13-19
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• 2002

새로운 방전 AND gate를 가지는 플라즈마 디스플레이 패널이 제안되었고 이를 검증하기 위한 구동 회로 시스템이 개발되었다. 그리고 방전 AND gate의 동작이 검증되었다. 방전 AND gate는 8$\mu\textrm{s}$의 동작속도와 20V의 동작마진을 가지고 동작하였으며 인근 주사라인의 방전을 정확히 제어할 수 있다는 것을 알았다. 이 방식은 직류 방전을 사용함으로 종래의 방전 AND gate에 비해 손쉽게 방전을 제어할 수가 있다. 더구나 AND gate의 입력방전과 출력방전이 분리되어 동작하기 때문에 디스플레이 방전이 AND gate를 통과하는 것을 방지할 수 있다. 그러므로 대화면 플라즈마 디스플레이에의 적용이 가능하고 주사방전이 화질에 영향을 주지 않으므로 명암비의 저하가 일어나지 않는다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 B
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• pp.858-860
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• 2003

This paper introduces the drive system for 500MVA short-circuit generator. Drive system is usually low-voltage, but this system is 2300V high-voltage using Insulated Gate Bipolar Transistor(IGBT). Drive system consists of switchgear, 18-pulse transformer, converter(source bridge), inverter(load bridge) and control rack. In this paper, It describes the function and construction of each part.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• 제11B권3호
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• pp.112-118
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• 2001

In the near future, the voltage of power system for passenger vehicle will be changed to 42V from existing 14V./ Because of increasing power and voltage ratings used in the vehicle the motor drive system has high switching dv/dt and it generates electromagnetic interference (EMI) To solve these problems multi-level inverter system may be used The feature of multi-level inverter is the output voltage to be synthesized from several levels of voltage Because of this feature high switching dv/dt and EMI can be reduced in the multi-level inverter system But as the number of level is increased manufacturing cost is getting expensive and system size is getting large. Because of these disadvantages the application of multi-level inverter has been restricted only to high power drives. The method to reduce manufacturing cost and system size is to integrate circuit of multi-level inverter into a few chips But isolated power supply and signal isolation circuit using transformer or opto-coupler for drive circuit are obstacles to implement the integrated circuit (IC) In this paper a drive circuit of 4-level inverter suitable for integration to hybrid or one chip is proposed In the proposed drive circuit DC link voltage is used directly as the power source of each gate drive circuit NPN transistors and PNP transistors are used to isolate to transfer the control signals. So the proposed drive circuit needs no transformers and opto-couplers for electrical isolation of drive circuit and is constructed only using components to be implemented on a silicon wafer With th e proposed drive circuit 4- level inverter system will be possible to be implemented through integrated circuit technology Using the proposed drive circuit 4- level inverter system is constructed and the validity and characteristics of the proposed drive circuit are proved through the experiments.

• 전자공학회논문지
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• 제51권1호
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• pp.52-56
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• 2014

본 논문은 고효율 전력증폭기는 무선전력전송을 위한 게이트와 드레인 바이어스 조절 회로를 사용하여 설계하였다. 이 조절 회로는 PAE (Power Added Efficiency)를 개선하기 위해 사용되었다. 게이트와 드레인 바이어스 조절 회로는 directional coupler, power detector, and operational amplifier로 구성되어있다. 구동증폭기를 사용하여 고이득 2단 증폭기는 전력증폭기의 낮은 입력단에 사용되었다. 게이트와 드레인 바이어스 조절회로를 사용하여 제안된 전력증폭기는 낮은 전력에서 높은 효율성을 가질 수 있다. PAE는 80.5%까지 향상되었고 출력전력은 40.17dBm이다.

• 한국산업정보학회논문지
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• 제19권3호
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• pp.25-30
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• 2014

본 논문에서는 태양광시스템의 분산형 최대 전력점 추적(DMPPT)을 제어하는 게이트 드라이버 회로를 설계하였다. 그림자가 생긴 모듈에서도 최대 전력점을 추적할 수 있는 분산형 방식(DMPPT) 방식을 구현 하였으며, 각각의 모듈 내부에 DC-DC 변환기를 구동하기 위한 고전압 게이트 구동회로를 설계하였다. 태양광 시스템의 내부는 12비트 ADC, PLL, 게이트 드라이버가 내장 되어 있다. 게이트 드라이버의 하이 사이드 레벨 쉬프터에 숏-펄스 발생기를 추가하여 전력소모와 소자가 받는 스트레스를 줄였다. BCDMOS 0.35um 공정을 사용하여 구현하였으며 최대 2A 전류를 감달 할 수 있고, 태양 광 전압 최대 50V까지 받을 수 있도록 설계하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1353_1354
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• 2009

The OTFT devices had inverted staggered structures of Au/pentacene/ppMMA/ITO on PET substrate. The overall device performances of the flexible devices such as the operating voltage, the field effect mobility, the on/off ratio and the off current are somewhat worse than those of devices fabricated on glass substrates. Pentacene/ppMMA OTFT benchmarks (mobility, sub-threshold slope, on/off ratio) were comparable to that of solution cast PMMA, but below average when compared to other polymer gate dielectrics. However, threshold and drive voltages were among the lowest reported for a polymer gate dielectric, and surpassed only by ultra-thin SAM gate dielectrics.

• 전기학회논문지
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• 제56권1호
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• pp.88-99
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• 2007

In this paper, a novel new pulse power generator based on IGBT stacks is proposed for pulse power application. Because it can generate up to 60kV pulse output voltage without any step- up transformer or pulse forming network, it has advantages of fast rising time, easiness of pulse width variation and rectangular pulse shape. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and one series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 850VDC pulse. Finally pulse output voltage is applied using total 72 series connected IGBTs. To reduce component for gate power supply, a simple and robust gate drive circuit is proposed. For gating signal synchronization, full bridge invertor and pulse transformer generates on-off signals of IGBT gating with gate power simultaneously and it has very good characteristics of short circuit protection.