• 전기학회논문지P
• /
• 제56권1호
• /
• pp.1-5
• /
• 2007

Study on the electron transport coefficient in mixtures of CF4 and Ar, have been analyzed over a range of the reduced electric field strength between 0.1 and 350[Td] by the two-term approximation of the Boltzmann equation (BEq.) method and the Monte Carlo simulation (MCS). The calculations of electron swarm parameters require the knowledge of several collision cross-sections of electron beam. Thus, published momentum transfer, ionization, vibration, attachment, electronic excitation, and dissociation cross-sections of electrons for $CF_4$ and Ar, were used. The differences of the transport coefficients of electrons in $CF_4$ mixtures of Ar, have been explained by the deduced energy distribution functions for electrons and the complete collision cross-sections for electrons. The results of the Boltzmann equation and the Monte Carlo simulation have been compared with the data presented by several workers. The deduced transport coefficients for electrons agree reasonably well with the experimental and simulation data obtained by Nakamura and Hayashi. The energy distribution function of electrons in $CF_4-Ar$ mixtures shows the Maxwellian distribution for energy. That is, $f({\varepsilon})$ has the symmetrical shape whose axis of symmetry is a most probably energy. The proposed theoretical simulation techniques in this work will be useful to predict the fundamental process of charged particles and the breakdown properties of gas mixtures. A two-term approximation of the Boltzmann equation analysis and Monte Carlo simulation have been used to study electron transport coefficients.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.480-480
• /
• 2010

In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1,500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photo-electron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Sheet resistance of 4 Ohms cm was achieved after the deposition and 30 min annealing in the hydrogen at $350^{\circ}C$. Elevation of the substrate temperature during the deposition process up to $350^{\circ}C$ leads to decreasing of the film's resistance due to rearrangement of the crystalline structure.

• 한국표면공학회지
• /
• 제38권1호
• /
• pp.7-13
• /
• 2005

Bismuth thin films were prepared on glass substrate with RF magnetron sputtering and effects of substrate temperature on surface morphology and their electrical transport properties were investigated. Grain growth of bismuth after nucleation and the onset of coalescense of grains at 393 K were observed with field emission secondary electron microscopy. Continuous thin films could not be obtained above 473 K because of grain segregation and island formation. Hall effect measurements showed that substrate heating yields the decrease of carrier density and the increase of mobility. Resistivity of bismuth film has its minimum (about 0.7 x 10/sup -3/ Ωcm) in range of 403～433 K. Annealing of bismuth films deposited at room temperature was carried out in a radiation furnace with flowing hydrogen gas. The change of resistivity was not significant due to cancellation of the decrease of carrier density and the increase of mobility. The abrupt change of electrical properties of film annealed above 523 K was found to be caused by partial oxidation of bismuth layer in x-ray diffraction analysis.

• 한국진공학회지
• /
• 제2권4호
• /
• pp.424-432
• /
• 1993

AlGaAs/InGaAs/GaAs pseudomorphic structures have been grown by atmosheric pressure-MOCVD . The Al incorporation efficiency is constant but slightly exceeds the Ga incorporation during the growth of AlGaAs layers at $650^{\circ}C$ . Meanwhile , the In incorporation efficiency is constant but slightly less than the Ga incorporation in InGAAs layers. InGaAs/GaAs QWs were grown and their optical properties were characterized . $\delta$-doped Al0.24Ga0.76As/In0.16 Ga0.84As p-HEMT structures were successfully grown by MOCVD and their transport properties were characterized by Hall effect and SdH measurements. SdH Measurements at 3.7K show clear magnetoresistance oscillations and plateaus in the quantum Hall effect confirming the existence of a two-dimensional electron gas(2DEG) and a parallel conduction through the GaAs buffer layer. The fabricated $1.5\mu\textrm{m}$gatelength p-HEMTs having p-type GaAs in the buffer layer show a high transconductance of 200 mS/mm and a good pinch-off characteristics.

• 한국분무공학회지
• /
• 제1권1호
• /
• pp.35-43
• /
• 1996

A vaporization model for single component fuel droplet has been developed for applying to sub- and supercritical conditions. This model can account for transient liquid heat ins and circulation effect inside the droplet, forced and natural convection, Stefan flow effect, real gas effect and ambient gas solubility into the liquid droplet in high-pressure conditions. Thermodynamic and transport properties are calculated as functions of temperature and pressure in both phases. Numerical calculations are carried out for several validation cases with the detailed experimental data. Numerical results confirm that this supercritical vaporization model is applicable to the high-pressure conditions encountered in the combustion processes of diesel engine.

• 반도체디스플레이기술학회지
• /
• 제17권4호
• /
• pp.91-96
• /
• 2018

In this study temperature distribution and gas flow inside a planetary type reactor in which a number of satellites on a spinning susceptor were rotating were analyzed using numerical simulation. Effects of flow rates on gas flow and temperature distribution were investigated in order to obtain design parameters. The commercial computational fluid dynamics software CFD-ACE+ was used in this study. The multiple-frame-of-reference was used to solve continuity, momentum and energy conservation equations which governed the transport phenomena inside the reactor. Kinetic theory was used to describe the physical properties of gas mixture. Effects of the rotation speed of the satellites was clearly seen when the inlet flow rate was small. Thickness of the boundary layer affected by the satellites rotation became very thin as the flow rate increased. The temperature field was little affected by the incoming flow rate of precursors.

• 멤브레인
• /
• 제23권5호
• /
• pp.375-383
• /
• 2013

나노 소재는 표면적이 매우 크고 크기나 기공이 균일하여 분리막에서 물질 전달통로나 특수한 기능성을 갖게 하는 소재로 이용이 가능하다. 그중에서도, 그래핀, 그래핀 옥사이드 및 탄소나노튜브와 같은 나노탄소 구조체에 대한 연구가 활발히 이루어지고 있다. 일차원 구조를 갖는 탄소나노튜브의 경우 우수한 열적, 화학적 및 기계적 성질을 가지고 있으나, 기존 연구에서는 주로 고분자와 혼합하여 기계적 물성을 강화하는 복합소재로서 사용됐으며, 응용분야의 한계를 가지고 있었다. 본 연구에서는 폴리 에틸렌 글리콜 다이아크릴레이트(PEGDA) 고분자 내에 개질된 탄소나노튜브를 혼합하여, 기체 분리막에서의 투과도 및 선택도의 변화를 관찰하였다.

• Journal of Magnetics
• /
• 제10권2호
• /
• pp.66-70
• /
• 2005

The junction properties between the ferromagnet (FM) and two-dimensional electron gas (2DEG) system are crucial to develop spin electronic devices. Two types of 2DEG layer, InAs and GaAs channel heterostructures, are fabricated to compare the junction properties of the two systems. InAs-based 2DEG layer with low trans-mission barrier contacts FM and shows ohmic behavior. GaAs-based 2DEG layer with $Al_2O_3$ tunneling layer is also prepared. During heat treatment at the furnace, arsenic gas was evaporated and top AlAs layer was converted to aluminum oxide layer. This new method of forming spin injection barrier on 2DEG system is very efficient to obtain tunneling behavior. In the potentiometric measurement, spin-orbit coupling of 2DEG layer is observed in the interface between FM and InAs channel 2DEG layers, which proves the efficient junction property of spin injection barrier.

• 대한기계학회논문집B
• /
• 제26권12호
• /
• pp.1715-1721
• /
• 2002

Numerical analysis was conducted to characterize the gas flow field and particle deposition on a horizontal freestanding semiconductor wafer under the laminar flow field at vacuum environment. In order to calculate the properties of gas, the gas was assumed to obey the ideal gas law. The particle transport mechanisms considered were convection, Brownian diffusion and gravitational settling. The averaged particle deposition velocities and their radial distributions fnr the upper surface of the wafer were calculated from the particle concentration equation in an Eulerian frame of reference for system pressures of 1 mbar~1 atm and particle sizes of 2nm~10$^4$ nm(10 ${\mu}{\textrm}{m}$). It was observed that as the system pressure decreases, the boundary layer of gas flow becomes thicker and the deposition velocities are increased over the whole range of particle size. One thing to be noted here is that the deposition velocities are increased in the diffusion dominant particle size range with decreasing system pressure, whereas the thickness of the boundary layer is larger. This contradiction is attributed to the increase of particle mechanical mobility and the consequent increase of Brownian diffusion with decreasing the system pressure. The present numerical results showed good agreement with the results of the approximate model and the available experimental data.

• 멤브레인
• /
• 제27권3호
• /
• pp.205-215
• /
• 2017

고분자 분리막은 가격이 저렴하고, 쉽게 제조가 가능하며, 투과도와 선택도가 우수하여 수처리 분야뿐만 아니라 기체분리에서도 중요한 역할을 한다. 하지만, 고분자 분리막은 일반적으로 투과도와 선택도의 역상관 관계를 나타내는 단점이 있다; 즉, 투과도가 높으면 선택도가 낮고, 선택도가 높으면 투과도가 높다. 이러한 단점을 극복하기 위한 방안 중의 하나가 촉진수송이다. 지난 수십 년간 촉진수송 이론은 촉진수송 분리막 제조에 있어 매우 중요하고 다양한 모델을 제시하는 데에 핵심적인 역할을 하였다. 한편, 촉진수송에서 주된 역할을 하는 운반체의 특성, 매질의 유동성 및 고분자 복합체의 물리화학적 성질 등을 이해하는 것은 중요하다. 운반체의 유동성에 따라 촉진수송 분리막의 종류를 3가지로 나눌 수 있다; 즉, 이동상 운반체 분리막, 준이동상 운반체 분리막, 고정상 운반체 분리막. 또한 촉진 운반체가 특정물질과 상호작용하는 데에는 4가지 종류의 가역반응으로 나눌 수 있다; 즉, 수소원자 전달 반응, 친핵성 첨가반응, 파이-착체 반응, 그리고 전기화학 반응. 이러한 촉진수송 분리막은 이산화탄소, 산소, 올레핀(프로필렌, 에틸렌)의 투과도를 선택적으로 향상시키는 역할을 한다. 이와 같이 본 총설에서는 다양한 촉진수송 분리막에 관련된 주요 연구내용과 이러한 연구를 수행하는 대표적인 전략들을 소개하고자 한다.