• Korean Journal of Materials Research
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• v.13 no.12
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• pp.796-800
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• 2003

The polypyrrole prepared with pyrrole monomer, APS and DBSA was synthesized by chemical Polymerization at $V^{\circ}C$ under atmosphere conditions. After dissolving polypyrrole powder to the chloroform including DBSA, polypyrrole film was prepared on the alumina substrate with an interdigitated electrode by using the dip-coating method. This film was soaked in methanol solvent for 1 h at room temperature and heated to $70^{\circ}C$ for 4 h in $N_2$. Initial resistance was increased with the increasing humidity and decreasing temperature. The sensitivity was increased with lower humidity and decreasing temperature. The best linearity was achieved at $25^{\circ}C$ and low humidity of 0%.

• Applied Chemistry for Engineering
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• v.29 no.2
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• pp.191-195
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• 2018

In this study, the influence of microporous structures of activated carbon fibers (ACFs) on dimethyl methylphosphonate (DMMP) gas sensing properties as a nerve agent simulant was investigated. The pore structure was given to carbon fibers by chemical activation process, and an electrode was fabricated for gas sensors by using these fibers. The PAN based ACF electrode, which is an N-type semiconductor, received electrons from a reducing gas such as DMMP, and then electrical resistance of its electrode finally decreased because of the reduced density of electron holes. The sensitivity of the fabricated DMMP gas sensor increased from 1.7% to 5.1% as the micropore volume increased. It is attributed that as micropores were formed for adsorbing DMMP whose molecular size was 0.57 nm, electron transfer between DMMP and ACF was facilitated. In conclusion, it is considered that the appropriate pore structure control of ACFs plays an important role in fabricating the DMMP gas sensor with a high sensitivity.

• Journal of Sensor Science and Technology
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• v.13 no.4
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• pp.303-308
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• 2004

This paper descibes on the characteristics of Ta-N(tantalum nitride) ceramic thin-film strain gauges which were deposited on Si substrates by DC reactive magnetron sputtering in an argon-nitrogen atmosphere (Ar-$(4{\sim}16%)N_{2}$) for high-temperature applications. These films were annealed in $2{\times}10^{-6}$ Torr vacuum furnace at the range of $500{\sim}1000^{\circ}C$. Optimum deposition atmosphere and annealing temperature were determined at $900^{\circ}C$ for 1 hr. in 8% $N_{2}$ gas flow ratio. Under optimum formation conditions, the Ta-N thin-film for strain gauges was obtained a high-resistivity of $768.93{\mu}{\Omega}{\cdot}cm$, a low temperature coefficient of resistance (TCR) of -84 ppm/$^{\circ}C$ and a good longitudinal gauge factor (GF) of 4.12.

• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.259-262
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• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, $H_{2}$, and Ar gas at $1150^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si (n-type) structure was fabricated. Its threshold voltage ($V_{bi}$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_{D}$) value were measured as 0.84 V, over 140 V, 61 nm, and $2.7{\times}10^{19}cm^{-3}$, respectively. Moreover, for the good ohmic contact, Al/poly 3C-SiC/Si (n-type) structure was annealed at 300, 400, and $500^{\circ}C$, respectively for 30 min under the vacuum condition of $5.0{\times}10^{-6}$ Torr. Finally, the p-n junction diodes fabricated on the poly 3C-Si/Si (p-type) were obtained like characteristics of single 3CSiC p-n junction diode. Therefore, poly 3C-SiC thin film diodes will be suitable for microsensors in conjunction with Si fabrication technology.

• Journal of the Korean Ceramic Society
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• v.55 no.1
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• pp.90-93
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• 2018

In this study, n-type $Bi_2Te_3$ in thermoelectric scrap is recovered through a wet reduction process. The recovered powder (tellurium) is grafted onto gas sensor in a new application that is not a thermoelectric device. Bismuth-rich powder is prepared by adding hydrazine when pH of the solution is brought to 13 using NaOH. The pH of the filtered solution was reduced using $HNO_3$, and then hydrazine was added to perform the re-reduction reaction. The tellurium-rich powder can be obtained through this reaction. The elemental analysis for these powders is confirmed by energy dispersive X-ray spectroscopy (EDS) analysis ; the successful separation of bismuth and tellurium is confirmed. Separated tellurium powder is mixed with DMF solvent and ethyl cellulose binder to confirm gas sensing properties. The tellurium paste was exposed in $NO_x$ atmosphere and exhibited a rapid reaction rate and recovery rate of less than 3 minutes for the gas.

• Journal of Sensor Science and Technology
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• v.17 no.5
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• pp.325-328
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• 2008

This paper describes the electrical properties of poly (polycrystalline) 3C-SiC thin films with different nitrogen doping concentrations. In-situ doped poly 3C-SiC thin films were deposited by APCVD at $1200^{\circ}C$ using HMDS (hexamethyildisilane: $Si_2(CH_3)_6)$) as Si and C precursor, and $0{\sim}100$ sccm $N_2$ as the dopant source gas. The peak of SiC is appeared in poly 3C-SiC thin films grown on $SiO_2/Si$ substrates in XRD(X-ray diffraction) and FT-IR(Fourier transform infrared spectroscopy) analyses. The resistivity of poly 3C-SiC thin films decreased from $8.35{\Omega}{\cdot}cm$ with $N_2$ of 0 sccm to $0.014{\Omega}{\cdot}cm$ with 100 sccm. The carrier concentration of poly 3C-SiC films increased with doping from $3.0819{\times}10^{17}$ to $2.2994{\times}10^{19}cm^{-3}$ and their electronic mobilities increased from 2.433 to $29.299cm^2/V{\cdot}S$, respectively.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.48-56
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• 1989

Contact-type linear image sensors for facsimile have been fabricated by means of rf glow discharge decomposition method of silane. The dependence of their electrical and optical properties on rf power, $SiH_4$ flow rate, ambient gas pressure, $H_2SiH_4$ ratio and substrate temperature are described. The a-Si:H monolayer demonstriated photosensitivity of 0.85 and $I_{ph}/I_d$ ratio of 100 unger 100 lux illumination. However, this monolayer has relatively high dark current due to carrier injection from both electrodes, resulting in low $I_{ph}/I_{dd}$ ratio. To suppress the dark current we have fabricated $SiO_2/i-a-Si:H/p-a-Si:H:B$ multilayer film with blocking structure. The photocurrent of this multilayer sensor with 6 V bias became saturated ar about 20nA under 10 lux illumination, while the dark current was less than 0.2 nA. Moreover, the spectral sensitivity of the multilayer film was enhanced for short wavelength visible region, compared with that of the a-Si:H monolayer. These results show that the fabricated photocon-ductive film can be used as the linear image sensor of the facsimile.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.1
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• pp.29-33
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• 2018

Using a vanadium dioxide ($VO_2$) source, highly pure and amorphous vanadium oxide (VO) thin films were deposited using an e-beam evaporator at room temperature and high vacuum (<$10^{-7}$ Torr). Then, by controlling the post-annealing conditions such as $N_2:O_2$ pressure ratio and annealing time, we could easily synthesize a homogeneous $VO_2$ thin film and also mixed-phase VO thin films, including $VO_2$, $V_2O_5$, $V_3O_7$, $V_5O_9$, and $V_6O_{13}$. The crystallinity and phase of these were characterized by X-ray diffraction, and the surface morphology by FE-SEM. Moreover, the electrical properties and ethanol sensing measurements of the VO thin films were analyzed as a function of temperature. In general, mixed-phases as a self-doping effect have enhanced electrical properties, with a high carrier density and an enhanced response to ethanol. In summary, we developed an easy, scalable, and reproducible fabrication process for VO thin films that is a promising candidate for many potential electrical and optical applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.222-222
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• 2012

Metal oxide gas sensors based on semiconductor type have attracted a great deal of attention due to their low cost, flexible production and simple usability. However, most works have been focused on n-type oxides, while the characteristics of p-type oxide gas sensors have been barely studied. An investigation on p-type oxides is very important in that the use of them makes possible the novel sensors such as p-n diode and tandem devices. Monoclinic cupric oxide (CuO) is p-type semiconductor with narrow band gap (~1.2 eV). This is composed of abundant, nontoxic elements on earth, and thus low-cost, environment-friendly devices can be realized. However, gas sensing properties of neat CuO were rarely explored and the mechanism still remains unclear. In this work, the neat CuO layers with highly ordered mesoporous structures were prepared by a template-free, one-pot solution-based method using novel ink solutions, formulated with copper formate tetrahydrate, hexylamine and ethyl cellulose. The shear viscosity of the formulated solutions was 5.79 Pa s at a shear rate of 1 s-1. The solutions were coated on SiO2/Si substrates by spin-coating (ink) and calcined for 1 h at the temperature of $200{\sim}600^{\circ}C$ in air. The surface and cross-sectional morphologies of the formed CuO layers were observed by a focused ion beam scanning electron microscopy (FIB-SEM) and porosity was determined by image analysis using simple computer-programming. XRD analysis showed phase evolutions of the layers, depending on the calcination temperature, and thermal decompositions of the neat precursor and the formulated ink were investigated by TGA and DSC. As a result, the formation of the porous structures was attributed to the vaporization of ethyl cellulose contained in the solutions. Mesoporous CuO, formed with the ink solution, consisted of grains and pores with nano-meter size. All of them were strongly dependent on calcination temperature. Sensing properties toward H2 and C2H5OH gases were examined as a function of operating temperature. High and fast responses toward H2 and C2H5OH gases were discussed in terms of crystallinity, nonstoichiometry and morphological factors such as porosity, grain size and surface-to-volume ratio. To our knowledge, the responses toward H2 and C2H5OH gases of these CuO gas sensors are comparable to previously reported values.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3319-3321
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• 1999

Pt-RTD and Micro Heater was fabricated by using MgO as medium layer in order to improve adhesion of Pt thin-films to $SiO_2$ layer, MgO layer improved adhesion of Pt thin-films to $SiO_2$ layer without any chemical reactions to Pt thin-films under high annealing temperatures, In the analysis of properties of Pt-RTD, TCR value had 3927 $ppm/^{\circ}C$ and liner in the temperature range of $25-400^{\circ}C$. The temperature of Pt micro-heater had up to $400^{\circ}C$ with 1.5watts of the heating power. In investigating output characteristics of flow sensors output voltages increased as gas flow rate and its conductivity increased due to increase of heat-loss from sensor to external. Output voltage was 82 mV at $N_2$ flow rate of 2000sccm, heating power of 1.2W.