• Title/Summary/Keyword: gas sensor$N_{2}$

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Hydrogen Gas Sensor Performance of a p-CuO/n-ZnO Thin-film Heterojunction (p-CuO/n-ZnO 이종접합 박막 구조의 수소 가스 특성 평가)

  • Yang, Yijun;Maeng, Bohee;Jung, Dong Geon;Lee, Junyeop;Kim, Yeongsam;An, Hee Kyung;Jung, Daewoong
    • Journal of Sensor Science and Technology
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    • v.31 no.5
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    • pp.337-342
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    • 2022
  • Hydrogen (H2) gas is widely preferred for use as a renewable energy source owing to its characteristics such as environmental friendliness and a high energy density. However, H2 can easily reverse or explode due to minor external factors. Therefore, H2 gas monitoring is crucial, especially when the H2 concentration is close to the lower explosive limit. In this study, metal oxide materials and their p-n heterojunctions were synthesized by a hydrothermal-assisted dip-coating method. The synthesized thin films were used as sensing materials for H2 gas. When the H2 concentration was varied, all metal oxide materials exhibited different gas sensitivities. The performance of the metal oxide gas sensor was analyzed to identify parameters that could improve the performance, such as the choice of the metal oxide material, effect of the p-n heterojunctions, and operating temperature conditions of the gas sensor. The experimental results demonstrated that a CuO/ZnO gas sensor with a p-n heterojunction exhibited a high sensitivity and fast response time (134.9% and 8 s, respectively) to 5% H2 gas at an operating temperature of 300℃.

A Study on the USN Zigbee Sensor Node for Transmission to Harmful Gas(CO, CO2) Sensing Data (유해가스(CO, CO2) 감지정보 전송을 위한 USN 지그비센서노드 구현)

  • Cheon, Dong-Jin;Park, Young-Jik;Lee, Seung-Ho;Kim, Jeong-Seop;Kwak, Dong-Kurl;Jung, Do-Young
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.7
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    • pp.1302-1308
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    • 2010
  • In this study, Zigbee Sensor Node to transmit harmful gases CO and $CO_2$ information using wireless communication within the ground and underground structures were developed. Wireless communication protocol was used Zigbee Stack included IEEE 802. 15.4 MAC protocol. For wireless transmission of detected harmful gas signal from ADC of MCU was implemented Zigbee Sensor Node that was developed protocol using Serial-Port-Profile(SPP) here. The proposed Zigbee Sensor Node was verified transmission distance from experiments. Transmission distance was into 90m in experiments. Distance experiments were measured at 10m intervals using sine & pulse wave input signal at indoors. The proposed Route Sensor Node was applied mesh routing protocol. When built up USN(Ubiquitous Sensor Network)using Route Sensor Node, transmission distance was not limited. On the experimental results, harmful gas values between direct measurements and USN measurements were consistent. The semiconductor CO sensor and N-DIR $CO_2$ sensor module as a harmful sensor was used. Therefore, the proposed Zigbee Sensor Node was verified about reliability and validity to build USN for transmission of harmful gas information.

Design and Fabrication of a Micro Gas Sensor Using Nano Sensing Materials on Multi-layer Type Micro Platform with Low Power Consumption (마이크로 플랫폼 상에 나노 감지 재료를 이용한 저전력 NOX 센서의 설계 및 제조)

  • Park, Sang-Il;Park, Joon-Shik;Lee, Min-Ho;Park, Kwang-Bum;Kim, Seong-Dong;Park, Hyo-Derk;Lee, In-Kyu
    • IEMEK Journal of Embedded Systems and Applications
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    • v.2 no.2
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    • pp.76-81
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    • 2007
  • A novel multi-layer type micro gas sensor for $NO_X$ detection was designed and fabricated. Micro platform defined as type II-1 in this article for micro gas sensor was fabricated using the MEMS technology to meet the demanding needs of lower power consumption. Nano composite materials were fabricated with nanosized tin oxide powder and $\underline{m}$ulti-$\underline{w}$all $\underline{c}$arbon $\underline{n}$ano $\underline{t}$ube (MWCNT) to improve sensitivity. We investigated characteristics of fabricated multi-layer type micro gas sensor with $NO_2$ concentration variations at constant 2.2 V. Sensitivity (S) of micro gas sensor were observed to increase from 2.9, to 7.4 and 11.2 as concentrations of $NO_2$ gases increased from 2.4 ppm, to 3.6 ppm and 4.9 ppm. When 2.4 ppm of $NO_2$ gas was applied, response time and recovery time of micro gas sensor were recorded as 101 seconds and 142 seconds, respectively.

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Gas sensing characteristics of thin film SnO2 sensors with different pretreatments (예비 처리 방법에 따른 박막 SnO2 센서의 가스 감응 특성)

  • Yun, Kwang-Hyun;Kim, Jong-Won;Rue, Gi-Hong;Huh, Jeung-Soo
    • Journal of Sensor Science and Technology
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    • v.15 no.5
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    • pp.309-316
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    • 2006
  • The $SnO_{2}$ thin film sensors were fabricated by a thermal oxidation method. $SnO_{2}$ thin film sensors were treated in $N_{2}$ atmosphere. The sensors with $O_{2}$ treatment after $N_{2}$ treatment showed 70 % sensitivity for 1 ppm $H_{2}S$ gas, which is higher than the sensors with only $O_{2}$ treatment. The Ni metal was evaporated on Sn thin film on the $Al_{2}O_{3}$ substrate. And the sensor was heated to grow the Sn nanowire in the tube furnace with $N_{2}$ atmosphere. Sn nanowire was thermally oxidized in $O_{2}$ environments. The sensitivity of $SnO_{2}$ nanowire sensor was measured at 500 ppb $H_{2}S$ gas. The selectivity of $SnO_{2}$ nanowire sensor compared with thin film and thick film $SnO_{2}$ was measured for $H_{2}S$, CO, and $NH_{3}$ in this study.

Fabrication of ZnO thin film gas sensor for detecting $(CH_3)_3N$ gas ($(CH_3)_3N$ 가스 감지용 ZnO 박막 가스 센서의 제조)

  • 신현우;박현수;윤동현;홍형기;권철한;이규정
    • Electrical & Electronic Materials
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    • v.8 no.1
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    • pp.21-26
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    • 1995
  • Highly sensitive and mechanically stable gas sensors have been fabricated using the microfabrication and micromaching techniques. The sensing material used to detect the offensive trimethylarnine ((CH$_{3}$)$_{3}$N) gas is 6 wt% $Al_{2}$O$_{3}$-doped, 1000.angs.-thick ZnO deposited by r. f. magnetron sputtering. The optimum operating temperature of the sensor is 350.deg.C and the corresponding heater power is about 85mW. Excellent thermal insulation is achieved by the use of a double-layer structure of 0.2.mu.m -thick silicon nitride and 1.4.mu.m-thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric pressure chemical vapor deposition(APCVD), respectively. The sensors are mechanically stable enough to endure at least 43, 200 heat cycles between room temperature and 350.deg. C.

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Structural and Electrical Properties of WOx Thin Films Deposited by Direct Current Reactive Sputtering for NOx Gas Sensor

  • Yoon, Young-Soo;Kim, Tae-Song;Park, Won-Kook
    • Journal of the Korean Ceramic Society
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    • v.41 no.2
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    • pp.97-101
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    • 2004
  • W $O_{x}$-based semiconductor type thin film gas sensor was fabricated for the detection of N $O_{x}$ by reactive d.c. sputtering method. The relative oxidation state of the deposited W $O_{x}$ films was approximately compared by the calculation of the difference of the binding energy between Ols to W4 $f_{7}$2/ core level XPS spectra in the standard W $O_3$ powder of known composition. As the annealing temperature increased from 500 to 80$0^{\circ}C$, relative oxygen contents and grain size of the sputtered films were gradually increased. As the results of sensitivity ( $R_{gas}$/ $R_{air}$) measurements for the 5 ppm N $O_2$ gas, the sensitivity was 110 and the sensor showed recovery time as fast as 200 s. The other sensor properties were examined in terms of surface microstructure, annealing temperature, and relative oxygen contents. These results indicated that the W $O_3$ thin film with well controlled structure is a good candidate for monitoring and controlling of automobile exhaust.haust.t.t.t.

A comparison between thick-film ZnO and $SnO_2$ gas sensors for CO gas detection (CO 검지용 후막형 ZnO와 $SnO_2$ 가스센서의 비교)

  • Kim, Bong-Hee;Yi, Seung-Hwan;Kang, Hee-Bok;Sung, Yung-Kwon
    • Proceedings of the KIEE Conference
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    • 1991.07a
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    • pp.209-212
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    • 1991
  • Recently, oxide semiconductor gas sensors consisted of n-type semiconductor materials such as $SnO_2$, ZnO and $Fe_2O_3$ have been widely used to detect reducing gases. The advantage of thick-film technology include the possibility of mass-production and automation, that of integrating the sensing element in a hybrid circuit and that of fuctional trimming of the sensor and/or the circuit. which would enable really interchangeable transducers to be prepared. In this paper, we made ZnO and $SnO_2$ gas sensors and investigated the sensitivity to CO gas. Therefore, we compared a ZnO gas sensor with a $SnO_2$ gas sensor.

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Gas Sensing Characteristics and Preparation of SnO2 Nano Powders (SnO2 나노 분말의 합성 및 가스 감응 특성)

  • Lee, Ji-Young;Yu, Yoon-Sic;Yu, Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.7
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    • pp.589-593
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    • 2011
  • [ $SnO_2$ ]nano powders were prepared by solution reduction method using tin chloride($SnCl_2{\cdot}2H_2O$), hydrazine($N_2H_4$) and NaOH. The $SnO_2$ thick films for gas sensors were fabricated by screen printing method on alumina substrates and annealed at $300^{\circ}C$ in air, respectively. XRD patterns of the $SnO_2$ nano powders showed the tetragonal structure with (110) dominant orientation. The particle size of $SnO_2$ nano powders at the ratio of $SnCl_2:N_2H_4$+NaOH= 1:6 was about 60 nm. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a test box. Sensitivity of $SnO_2$ gas sensor to 5 ppm $CH_4$gas and 5 ppm $CH_3CH_2CH_3$ gas was investigated for various $SnCl_2:N_2H_4$+NaOH proportion. The highest sensitivity to $CH_4$ gas and $CH_3CH_2CH_3$ gas of $SnO_2$ sensors was observed at the $SnCl_2:N_2H_4$+NaOH= 1:8 and $SnCl_2:N_2H_4$+NaOH= 1:6, respectively. Response and recovery times of $SnO_2$ gas sensors prepared by $SnCl_2:N_2H_4$+NaOH= 1:6 was about 40 s and 30 s, respectively.

$NO_2$ Gas Sensor Utilizing Pt-$WO_3-Si_3N_4-SiO_2$-Si-Al Capacitor (Pt-$WO_3-Si_3N_4-SiO_2$-Si-Al 캐패시터를 이용한 $NO_2$ 가스 센서)

  • 김창교;이주헌;이영환;유광수;김영호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.11a
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    • pp.105-108
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    • 1998
  • Pt-WO$_3$-Si$_3$N$_4$-SiO$_2$-Si-Al 캐패시터를 이용한 NO$_2$ 가스 센서를 개발하였다. 표준 실리콘 MNOS구조에 촉매 게이트로 Pt와 가스 흡착층으로 WO$_3$를 이용함으로서 전통적인 세라믹 가스 센서보다 낮은 온도에서 NO$_2$ 가스를 감지할 수 있었다. 은도 변화와 NO$_2$ 가스 농도의 변화에 따라서 디바이스의 NO$_2$ 가스 감도를 조사하였다. Pt-WO$_3$ 계면에서 NO$_2$ 이온농도의 변화에 기초로 한 가스 감지 모델을 제시하였다. 제시된 가스 감지 모델을 계면에서의 가스 반응 속도론에 의하여 분석함으로서 확인하였다.

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Highly Selective and Sensitive Detection of Acetone by ZnWO4-WO3 Hetero-composite Spheres

  • Ki Beom Kim;Myung Sung Sohn;Seong-Young Jeong
    • Journal of Sensor Science and Technology
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    • v.33 no.5
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    • pp.237-241
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    • 2024
  • ZnWO4-WO3 hetero-composite microspheres were prepared by ultrasonic spray pyrolysis of a solution containing Zn and W cations, followed by heat treatment at 600℃. The gas-sensing characteristics of 5 at% of Zn-added WO3 (5Zn-WO3; ZnWO4-WO3 hetero-composite) microspheres to 1 ppm acetone, ethanol, 20 ppm hydrogen (H2), 5 ppm carbon monoxide (CO), 25 ppb toluene, and 5 ppm ammonia (NH3) were measured at 325-400℃ under 80% relative humidity (RH). The sensor using 5Zn-WO3 microspheres exhibited highly selective and sensitive gas-sensing properties to acetone at 375℃ even under high humidity conditions. These superior gas-sensing properties were attributed to the increased resistance (electronic sensitization) through n-n heterojunction formation between WO3 and ZnWO4 phases and the acidic property of WO3, which exhibited a low gas response to interfering ethanol gas. The superior acetone gas-sensing characteristics of the 5Zn-WO3 sensor can be utilized in breath acetone analyzers for rapid, real-time ketogenic diet monitoring.