• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.866-869
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• 2001

In this study, (Ba,Sr)TiO$_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP). Etching characteristics of BST thin films including etch rate and selectivity were evaluated as a function of the etching parameters such as gas mixing ratio, rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 $\AA$/min at Ar(90)/CF$_4$(10), 600 W/350 V and 5 mTorr. The selectivity of BST to PR was 0.6, 0.7, respectively. To analyze the composition of surface residue remaining after the etching, samples etched with different CF$_4$/Ar gas mixing ratio were investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). From the results of XPS and SIMS, there are chemical reaction between Ba, Sr, Ti and C, F radicals during the etching and remained on the surface.

• 반도체디스플레이기술학회지
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• 제2권3호
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• pp.7-11
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• 2003

In this research, the etching characteristics of via contact and deep contact hole have been studied using multi-pole inductively coupled plasma(MICP) etching system. We investigated Plasma density of MICP source using the Langmuir probe and etching characteristics with RF frequency, wall temperature, chamber gap, and gas chemistry containing Carbon and Fluorine. As the etching time increases, formation of the polymer increases. To improve the polymer formation, we controlled the temperature of the reacting chamber, and we found that temperature of the chamber was very effective to decrease the polymer thickness. The deep contact etch profile and high selectivity(oxide to photoresist) have been achieved with the optimum mixed gas ratio containing C and F and the temperature control of the etching chamber.

• 한국진공학회지
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• 제5권2호
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• pp.169-174
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• 1996

The applications of the high density plasma sources to the etching in semiconductor fabrication process are actively studied because of the more strict requirement from the dry etching process due to shrinking down of the critical dimension. But in the oxide etching with the high density plasma sources, abundant fluorine atoms released from the flurocarbon feed gas make it difficult to get the highly selective $SiO_2/Si$ etching. In this study, to improve the $SiO_2/Si$ etch selectivity through the control of the radical loss channels, we propose the wall heating , one of methods of controlling loss mechanisms. With appearance mass spectroscopy(AMS) and actinometric optical emission spectroscopy(OES), the increase of both radicals impinging on the substrate and existing in bulk plasma, and the decrease of the fluorine atom with wall temperature are observed. As a result, a 40% improvement of the selectivity was achieved for the carbon rich feed gas.

• E2M - 전기 전자와 첨단 소재
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• 제8권6호
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• pp.774-779
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• 1995

Process optimization experiments based on the Taguchi method were performed in order to set up the optimal process conditions for the contact oxide etching process module which was built in order to be attached to the cluster system of multi-processing purpose. In order to compare with Taguchi method, the contact oxide etching process carried out with different process parameters(CHF$_{3}$/CF$_{4}$ gas flow rate, chamber pressure, RF power and magnetic field intensity). Optimal etching characteristics were evaluated in terms of etch rate, selectivity, uniformity and etched profile. In this paper, as a final analysis of experimental results the optimal etching characteristics were obtained at the process conditions of CHF3/CF4 gas flow rate = 72/8 sccm, chamber pressure = 50 mTorr, RF power = 500 watts, and magnetic field intensity = 90 gauss.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.726-729
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• 2004

Etching characteristics of (Pb,Sr)$TiO_3$(PST) thin films were investigated using inductively coupled chlorine based plasma system as functions of gas mixing ratio, RF power and DC bias voltage. It was found that increasing of hi content in gas mixture lead to sufficient increasing of etch rate and selectivity of PST to Pt. The maximum etch rate of PST film is $562{\AA}/min$ and the selectivity of PST film to Pt is 0.8 at $Cl_2/(Cl_2+Ar)$ of 20 %. It was Proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• 멤브레인
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• 제24권4호
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• pp.325-331
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• 2014

새로운 구조를 가진 폴리이미드를 이용하여 고투과, 고선택성 불활성기체충진장치용 기체 분리막을 제조하였다. 높은 기체투과도와 용해도를 나타내는 무수물인 2,2-bis(3,4-carboxylphenyl) hexafluoropropane와 두 종류의 아민을 사용하여 신규 폴리이미드를 합성하였다. 투과도를 증가시키기 위해 2,3,5,6-Tetramethyl-1,4-phenylenediamine를 사용하였고, 선택도를 높이기 위해 여러 종류의 아민을 사용하였다. 화학적 이미드화 방법으로 공중합체를 준비되었으며 100,000 g/mol 이상의 평균 분자량을 나타내었다. 합성된 고분자의 열적 특성을 분석을 하기 위해 유리전이 온도($T_g$)와 열적 특성은 시차주사열량계(DSC)와 열중량분석기(TGA)로 측정을 하였으며, 유리전이온도($T_g$)는 $300^{\circ}C$, 열분해 온도는 $500^{\circ}C$가 넘어 뛰어난 열적 특성을 보였다. 기체투과도 특성은 time-lag 장비를 사용하였으며 그 결과, 일반 폴리이미드의 경우 대부분 기체투과도가 1 barrer 이하의 수치를 보이지만, 합성된 고분자의 경우 산소투과도 36.21 barrer과 산소/질소 선택도의 경우 4.1로 고투과 고선택도를 나타내어 불활성기체 충진장치용 장치로의 적용 가능성을 확인할 수 있었다.

• 멤브레인
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• 제25권3호
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• pp.248-255
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• 2015

아민화된 폴리이서이미드(polyetherimide (PEI))막을 실험실에서 합성하여 아민화별로 제조된 막을 이용하여 이산화탄소, 질소, 메탄, 산소, 이산화황의 기체투과도와 확산도 및 용해도를 Time-lag법으로 상온에서 측정하였다. 일반적으로 아민기의 주사슬에 반응되는 아민화율이 증가할수록 분자사이의 공간이 좁아지기 때문에 투과도가 전체적으로 감소했지만, 이산화황은 산 성질의 이산화황과 염기 성질의 아민기의 결합으로 인하여 증가하였다. 건기체에 대한 확산도 및 용해도는 아민화율이 증가할수록 이산화황을 제외한 모든 기체에서 감소하였고 또한 용해도 역시 감소하였다. 그러나 이산화황의 경우 아민화율이 증가하면서 용해도가 증가하게 되어 확산도 또한 증가한 것으로 사료된다. 이산화탄소/질소의 경우 선택도는 아민화율이 3일 경우 60을 나타내었다. 습기체의 경우 상대습도가 100일 때 투과도가 70 barrer을 나타내었고 질소에 대한 선택도는 약 18 정도를 보여주었다.

• 멤브레인
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• 제14권2호
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• pp.99-107
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• 2004

Carbon molecular sieve (CMS) membranes were prepared by pyrolysis of polyimides having carboxylic acid groups and applied to the hydrogen separation. The polymeric membranes having carboxylic acid groups showed different steric properties as compared with polymeric membranes having other side groups ($-CH_3$ and $-CF_3$) because of the hydrogen bond between the carboxylic acid groups. However, the microporous CMS membranes were significantly affected by the decomposable side groups evidenced from the wide angle X-rat diffraction, nitrogen adsorption isotherms, and single gas permeation measurement. Furthermore, the gas separation properties of the CMS membranes were essentially affected by the pyrolysis temperature. As a result, the CMS membranes Prepared by Pyrolysis of polyimide containing carboxylic acid froups at $700^{\circ}C$ showed the $H_2$ permeability of 3,809 Baller [$1{\times}10^{-10}$ H $\textrm{cm}^$(STP)cm/$\textrm{cm}^2$.s.cmHg], $H_2$/$N_2$, selectivity of 46 and $H_2$/$CH_4$ selectivity of 130 while the CMS membranes derived from polyimide showed the H$_2$ permeability of 3,272 Barrer, $H_2$/$N_2$ selectivity of 136 and $H_2$/$CH_4$ selectivity of 177.

• 공업화학
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• 제29권1호
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• pp.67-76
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• 2018

본 연구에서는 PDMS에 halloysite nanotube (HNT)와 modified HNT (mHNT)를 첨가하여 PDMS-HNT 복합막과 PDMS-mHNT 복합막을 제조하였다. 그리고 물리 화학적 특성을 조사하기 위하여 FT-IR, XRD, TGA, SEM을 사용하였고, $N_2$와 $CO_2$ 기체에 대한 투과도와 선택도 성질을 고찰하였다. 특히, $35^{\circ}C$에서 PDMS-HNT 10 wt% 복합막과 PDMS-mHNT 5 wt% 복합막은 가장 높은 $CO_2/N_2$ 선택도와 $CO_2$ 투과도를 보였다. 전체적으로 PDMS-HNT 복합막과 PDMS-mHNT 복합막은 PDMS 막보다 $CO_2/N_2$ 선택도가 증가하였다.

• 멤브레인
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• 제22권5호
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• pp.342-351
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• 2012

본 연구에서는 PTMSP[poly(1-trimethylsilyl-1-propyne)]의 기체투과에 대한 선택도와 열적 안정성, 시간에 따른 노화현상으로 인한 투과특성의 감소를 개선하기 위해서 PTMSP/PDMS[poly(dimethylsioxane)] graft copolymer에 zeolite를 삽입하여 PTMSP/PDMS-NaY zeolite 복합막과 PTMSP/PDMS-NaA zeolite 복합막을 제조하였다. 물리 화학적 특성을 FT-IR, $^1H$-NMR, TGA, SEM, GPC을 사용하여 조사하였고, $H_2$와 $N_2$ 기체에 대한 투과도와 선택도 성질을 고찰하였다. PTMSP/PDMS-NaY zeolite 복합막과 PTMSP/PDMS-NaA zeolite 복합막 $H_2$와 $N_2$ 투과도는 PTMSP/PDMS graft copolymer 단일막보다 증가하였고, zeolite 함량이 증가함에 따라 증가하였다. 반면에 선택도($H_2/N_2$)는 zeolite 함량이 증가함에 따라 감소하였다. PTMSP/PDMS-NaA zeolite 복합막은 PTMSP/PDMS-NaY zeolite 복합막보다 높은 투과도와 선택도를 보였다.