• 제목/요약/키워드: gas mask

검색결과 121건 처리시간 0.03초

The Influence of $O_2$ Gas on the Etch Characteristics of FePt Thin Films in $CH_4/O_2/Ar$ gas

  • Lee, Il-Hoon;Lee, Tea-Young;Chung, Chee-Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.408-408
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    • 2012
  • It is well known that magnetic random access memory (MRAM) is nonvolatile memory devices using ferromagnetic materials. MRAM has the merits such as fast access time, unlimited read/write endurance and nonvolatility. Although DRAM has many advantages containing high storage density, fast access time and low power consumption, it becomes volatile when the power is turned off. Owing to the attractive advantages of MRAM, MRAM is being spotlighted as an alternative device in the future. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal- oxide semiconductor (CMOS). MTJ stacks are composed of various magnetic materials. FePt thin films are used as a pinned layer of MTJ stack. Up to date, an inductively coupled plasma reactive ion etching (ICPRIE) method of MTJ stacks showed better results in terms of etch rate and etch profile than any other methods such as ion milling, chemical assisted ion etching (CAIE), reactive ion etching (RIE). In order to improve etch profiles without redepositon, a better etching process of MTJ stack needs to be developed by using different etch gases and etch parameters. In this research, influences of $O_2$ gas on the etching characteristics of FePt thin films were investigated. FePt thin films were etched using ICPRIE in $CH_4/O_2/Ar$ gas mix. The etch rate and the etch selectivity were investigated in various $O_2$ concentrations. The etch profiles were studied in varying etch parameters such as coil rf power, dc-bias voltage, and gas pressure. TiN was employed as a hard mask. For observation etch profiles, field emission scanning electron microscopy (FESEM) was used.

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화생방 보호의 성능평가를 위한 무선 실시간 가스 검출기 개발 (Development of Wireless Real-Time Gas Detector System for Chemical Protection Performance Test of Personal Protective Equipment)

  • 가동하
    • 한국군사과학기술학회지
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    • 제23권3호
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    • pp.294-301
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    • 2020
  • Man-In-Simulant Test(MIST) provides a test method to evaluate chemical protective equipments such as protective garments, gloves, footwear and gas mask. The MIST chamber is built to control concentration of chemical vapor that has a activity space for two persons. Non-toxic methyl-salicylate(MeS) is used to simulate chemical agent vapor. We carried out to measure inward leakage MeS vapors by using passive adsorbent dosimeter(PAD) which are placed on the skin at specific locations of the body while man is activity according to the standard procedure in MIST chamber. But more time is required for PADs and there is concern of contamination in PADs by recovering after experiment. Therefore detector for measuring in real time is necessary. In order to analyze in real time the contamination of the personal protective equipment inside the chemical environment, we have developed a wireless real-time gas detector. The detector consists of 8 gas-sensors and 1 control-board. The control-board includes a CPU for processing a signal, a power supply unit for biasing the sensor and Bluetooth-chipset for transmission of signals to external PC. All signals from gas-sensors are converted into digital signals simultaneously in the control-board. These digital signals are stored in external PC via Bluetooth wireless communication. The experiment is performed by using protective equipment worn on manikin. The detector is mounted inside protective equipment which is capable of providing a real-time monitoring inward leakage MeS vapor. Developed detector is demonstrated the feasibility as real-time detector for MIST.

한국군 비정시자용 안경의 보급체계 분석 (Analysis of the Eyeglasses Supply System for Ametropes in ROK Military)

  • 진용갑;구본엽;이우철;윤문수;박진태;이항석;이교은;임현성;장재영;마기중
    • 대한시과학회지
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    • 제20권4호
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    • pp.579-588
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    • 2018
  • 목적 : 대한민국 비정시 군인의 안경 청구 및 보급체계를 분석하고 개선방안을 제시하고자 하였다. 방법 : 국군에서 제공되는 비정시 군인용 안경의 청구 및 보급체계를 조사하고 분석하였다. 비정시 군인 37명을 대상으로 평소 착용하는 일반안경의 굴절력을 기준으로 보급된 파편방호용 및 방독면용 내부 장착안경의 굴절력과 교정시력을 측정하였다. 원거리 교정시력이 1.0 이하인 대상에게 완전교정을 실시하고 교정시력의 변화를 비교하였다. 현 청구 및 보급에 따른 문제점의 개선방안을 제시하고 시력관리 전문 인력의 활용방안을 모색하였다. 결과 : 비정시 군인에게 보급되는 안경은 입대할 때 착용한 안경의 굴절력과 동일하게 복제되었다. 37명의 비정시 군인에게 보급된 일반안경, 파편방호용 및 방독면용 내부 장착 안경의 등가구면굴절력은 각각 $-3.47{\pm}1.69D$, $-3.52{\pm}1.66D$$-3.55{\pm}1.63D$였으며 완전교정 등가구면굴절력은 $-3.79{\pm}1.66D$로 모두 유의한 차이를 보였다(p<0.05). 일반안경, 파편방호용 및 방독면용 내부 장착 안경에 의한 원거리 고대비 및 저대비 교정시력(logMAR)은 각각 $0.06{\pm}0.80$, $0.21{\pm}0.82$, $0.15{\pm}0.74$, $0.34{\pm}0.89$$0.10{\pm}0.70$, $0.22{\pm}0.27$이었으며, 완전교정 후에는 각각 $0.02{\pm}1.05$, $0.10{\pm}0.07$, $0.09{\pm}0.92$, $0.26{\pm}0.10$$0.04{\pm}1.00$, $0.19{\pm}1.00$으로 증가하였다. 일반안경과 방독면 안경의 저대비 시력을 제외하고 유의한 차이를 보였다(p<0.05). 안경의 청구, 제작 및 보급은 각각 5 단계로 구성되며, 최초 청구로부터 보급까지 약 2주 이상 소요되는 것으로 나타났다. 결론 : 비정시 군인의 안경 보급체계는 1) 굴절검사 체계의 결여, 2) 청구부터 보급까지 소요시간이 길고, 3) 보급 안경의 굴절력이 정확하지 못한 것으로 나타났다. 이를 개선하기 위해 단기적으로 관리 인력의 굴절력 측정에 대한 전문지식의 교육이 필요하고, 장기적으로 안경처방 표준체계의 도입과 시력관리 전문 인력의 확보가 필요할 것이다.

rf 마그네트론 스퍼링에 의하여 증착된 TiN 박막의 물성에 대한 증착변수의 영향 (Effect of Deposition Parameters on the Properties of TiN Thin Films Deposited by rf Magnetron Sputtering)

  • 이도영;정지원
    • Korean Chemical Engineering Research
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    • 제46권4호
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    • pp.676-680
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    • 2008
  • Radio-frequency (rf) 마그네트론 스퍼터링법을 이용하여 $SiO_2(2000{\AA})/Si$ 기판위에 TiN 박막이 증착되었다. $N_2/Ar$ 혼합가스에서 $N_2$ 가스의 농도, rf power, 공정압력 등을 변화시켜서 TiN 박막이 증착되었고 증착된 박막의 증착속도, 전기저항도 및 표면의 거칠기 등이 조사되었다. $N_2$ 가스의 농도가 증가함에 따라서 증착속도는 감소하였고 저항도는 증가하였으며 표면의 거칠기는 감소하였다. rf power가 증가함에 따라서 증착속도는 증가하였지만 저항도는 감소하였다. 증착압력의 증가에 따라서 증착속도는 큰 변화가 없었지만 저항도가 급격히 증가하였으며, 1 mTorr의 압력에서 $2.46{\times}10^{-4}{\Omega}cm$의 저항도를 갖는 TiN 박막이 얻어졌다. 박막의 증착속도와 저항도는 상관관계가 있는 것이 관찰되었고 특히 증착압력이 박막의 저항도에 가장 큰 영향을 미치는 것을 알 수 있었다.

Cl2/Ar 플라즈마를 이용한 Al2O3 박막의 식각 (Dry Etching of Al2O3 Thin Film by Cl2/Ar Plasma)

  • 양설;엄두승;김관하;송상헌;김창일
    • 한국전기전자재료학회논문지
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    • 제22권12호
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    • pp.1005-1008
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    • 2009
  • In this study, adaptively coupled plasma (ACP) source was used for dry etching of $Al_2O_3$ thin film. During the etching process, the wafer surface temperature is an important parameter to influent the etching characteristics. Therefore, the experiments were carried out in ACP to measuring the etch rate, the selectivities of $Al_2O_3$ thin film to mask materials and the etch profile as functions of $Cl_2$/Ar gas ratio and substrate temperature. The highest etch rate of $Al_2O_3$ was 65.4 nm/min at 75% of $Cl_2/(Cl_2+Ar)$ gas mixing ratio. The etched profile was characterized using field effect scanning electron microscopy (FE-SEM). The chemical states of $Al_2O_3$ thin film surfaces were investigated with x-ray photoelectron spectroscopy (XPS).

EUVL 응용을 위한 Mo/Si 박막 특성 전산모사 (Computer Simulation of Mo/Si Thin Film Characteristics for EUVL Technology)

  • 이영태;정용재
    • 한국세라믹학회지
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    • 제39권8호
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    • pp.807-811
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    • 2002
  • 본 연구에서는 EUVL(Extreme Ultra-Violet Lithography) 공정에서 사용되어지는 Mo/Si 다층박막 마스크 물질의 최적화된 제조공정을 도모하기 위해 Monte Carlo법을 적용한 PVD 공정 시뮬레이터를 사용하여 Mo/Si 다층박막 증착변수에 따른 박막의 형상변화를 분석하였다. 박막의 형상은 가스압력(1∼30 mTorr), 타겟과 기판과의 거리 (1∼30 cm) 및 확산거리(1∼10 nm)에 따라 크게 변함을 알 수 있었으며 가스압력이 낮을수록, 기판과 타겟과의 거리가 멀어질수록 균일한 표면의 박막 형성이 가능할 것으로 예측되었다.

차세대 노광공정용 Ta박막의 $0.2\mu\textrm{m}$ 미세패턴 식각특성 연구 (Study on the Etching Characteristics of $0.2\mu\textrm{m}$ fine Pattern of Ta Thin film for Next Generation Lithography Mask)

  • 우상균;김상훈;주섭열;안진호
    • 한국재료학회지
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    • 제10권12호
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    • pp.819-824
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    • 2000
  • 본 연구에서는 Electron Cyclotron Resonance plasma etching system 을 이용한 Ta 박막의 미세 식각 특성을 연구하였다. 염소 plasma를 사용하여 microwave power, RF Power, working pressure, gas chemistry 등의 변화에 따른 식각 profile의 영향을 조사하였고, pattern density가 증가함에 따라 발생하는 microloading 현상을 $0.2{\mu\textrm{m}}$ 이하의 패턴에서 확인 하였다. 이를 개선하기 위하여 식각 과정을 두 단계로 분리하는 2단계 식각 공정을 수행하였으며 이를 통해 우수한 식각 profile을 얻을 수 있었다.

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다구치 방법을 이용한 비정질 수정 건식 식각 최적화 (Optimization for Fused Quartz DRIE using Taguchi Method)

  • 송은석;정형균;황영석;현익재;김용권;백창욱
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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    • pp.129-130
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    • 2008
  • In this paper, optimal DRIE process conditions for fused quartz are experimentally determined by Taguchi method to develop high-performance inertial sensors based on the fused quartz material, which is known to have high Q-factors. Using Si layer as an etch mask, which was formed by previously developed bonding process of the fused quartz and Si wafer, fused quartz DRIE process was performed. Different 9 flow rate conditions of $C_4F_8$, $O_2$, He gas have been tested and the optimum combination of these factors was estimated. By this work, the ability to fabricate high aspect ratio fused quartz structure was confirmed.

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광촉매 활용 광투과 노출콘크리트 블록 및 거푸집 개발 (Photocatalyst Applied Light Transparent Exposed Concrete Block and Mold Development)

  • 서승훈;강영언;전승헌;권시원;김병일
    • 한국건축시공학회:학술대회논문집
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    • 한국건축시공학회 2018년도 추계 학술논문 발표대회
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    • pp.16-17
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    • 2018
  • A few years ago, the rapid degradation of domestic air quality has led to the efforts of exhaust gas policy and fine dust mask, but it is not a fundamental measure. In Korea, photocatalyst will be applied to residential and multi-use facilites to purify indoor and outdoor air. Also, in this study, it is tried to produce exposed concrete that is aesthetically pleasing as well as air purification of indoor by combining with light transparent concrete according to the increasing interest in human indoor living environment. For this purpose, we have developed a block formwork for photocatalysis light transparent concrete and established a suitable manufacturing method for on-site construction.

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Fabrication of low-stress silicon nitride film for application to biochemical sensor array

  • 손영수
    • 센서학회지
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    • 제14권5호
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    • pp.357-361
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    • 2005
  • Low-stress silicon nitride (LSN) thin films with embedded metal line have been developed as free standing structures to keep microspheres in proper locations and localized heat source for application to a chip-based sensor array for the simultaneous and near-real-time detection of multiple analytes in solution. The LSN film has been utilized as a structural material as well as a hard mask layer for wet anisotropic etching of silicon. The LSN was deposited by LPCVD (Low Pressure Chemical Vapor Deposition) process by varing the ratio of source gas flows. The residual stress of the LSN film was measured by laser curvature method. The residual stress of the LSN film is 6 times lower than that of the stoichiometric silicon nitride film. The test results showed that not only the LSN film but also the stack of LSN layers with embedded metal line could stand without notable deflection.