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http://dx.doi.org/10.4191/KCERS.2002.39.8.807

Computer Simulation of Mo/Si Thin Film Characteristics for EUVL Technology  

Lee, Young-Tae (Department of Ceramic Engineering, Hanyang University)
Chung, Yong-Chae (Department of Ceramic Engineering, Hanyang University)
Publication Information
Journal of the Korean Ceramic Society / v.39, no.8, 2002 , pp. 807-811 More about this Journal
Abstract
In this work, we investigated the deposition behavior of Mo/Si multilayer thin film structures simulated by a PVD process simulator based on Monte Carlo method to assist the optimized fabrication of the high quality mask in EUVL(Extreme Ultra-Violet Lithography) process. The shape of simulated thin film structures turned out to be largely dependent on the gas pressure(1∼30 mTorr), the target-substrate distance(1∼30 cm) and the diffusion length(1∼10 nm). From the simulation studies, it was predicted that relatively uniform thin film structures can be fabricated by decreasing gas pressure and increasing the target-substrate distance.
Keywords
Mo/Si thin film; EUVL; Monte Carlo simulation; PVD process; SIMBAD;
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