• Journal of the Semiconductor & Display Technology
• /
• v.17 no.2
• /
• pp.71-75
• /
• 2018

In this study, we prepared OLED cell with ITO (Indium Tin Oxide) films grown on the glass substrate by facing targets sputtering. Before fabrication of OLED cells, we investigated properties of ITO films deposited at various sputtering conditions. To investigate properties of as-prepared films, we employed four-point probe, UV-VIS spectrometer, X-ray diffractometer (XRD), field emission scanning electron microscopy (FE-SEM), hall-effect measurement. As a results, as-prepared ITO films have high transmittance of over 85 % in the visible range (300-800 nm) and a resistivity of under $10^{-4}$ (${\Omega}-cm$). Their resistivity increased as a function of oxygen gas flow and substrate temperature. OLED cell with ITO films were fabricated by thermal evpoeartor. Properties of OLEDs cell referring to properties of ITO films.

• Journal of the Semiconductor & Display Technology
• /
• v.15 no.4
• /
• pp.27-32
• /
• 2016

In recent years, various researches have been conducted to improve process yields in accordance with miniaturization of semiconductor. APC(Advanced Process Control) is considered one of the methods to increase in process yields. APC is a process control technology that maintains optimal process conditions and improves the reliability of results by controlling and formulating the relationship among the various process parameters and results. We built up an optical diagnostic system with a three-channel spectrometer. The system detects signals those represent the changes of specific emission peaks intensity versus each reference and converts it into MFC control signals to get back the changes to the reference state. Controlling the MFC continues until the specific peak intensity changes into the normal state. Through this device, we tested a APC automatically responding to process changes during the plasma process. We could control gas flow while sputtering process on going and improve uniformity of plasma intensity with this system. Finally, we have got results those enhance the plasma intensity non-uniformity to 7.7% from 15.5%. Also, found unexpected oxygen flow what is estimated to be come out from IGZO target.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2006.10a
• /
• pp.138-144
• /
• 2006

Non-contact transportation of a large-sized glass plate using air cushion for the sputtering system of liquid crystal display panel was considered. The gas is injected through multiple small holes to maintain the force for levitating glass plate. Complex flow field and resulting pressure distribution on the glass surface was numerically studied to design the air injection pad. The exhaust hole size was varied to obtain evenly distributed pressure distribution at fixed diameter of the injection hole. Considering the force for levitating glass plate, the diameter of the exhaust hole of 30 to 40 times of the gas injection hole was recommended.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2007.06a
• /
• pp.149-156
• /
• 2007

Non-contact transportation of the large-sized glass plate using air-cushion is considered for sputtering system of LCD panel. The Argon gas from second gas injection holes is injected to levitate and transport the glass plate. Low maximum pressure and uniform pressure distribution on the bottom surface of the glass plate must be maintained for stable levitation and transportation of the glass plate. Therefore, the analysis of fluid flow between the glass plate and the air-pad is numerically performed for varying space between the injection holes in this study. The pressure uniformity on the bottom surface of the glass plate is evaluated for overall glass plate. The distance between the injection holes must be designed below 90 mm for obtaining the low maximum pressure and uniform pressure distribution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1996.11a
• /
• pp.79-81
• /
• 1996

We fabricated SrTiO$_3$thin film capacitor on the Ag/Si-wafer by RF sputtering deposition. And I-V characteristics and structual analysis of the thin film capacitor are investigated. We found that the leakage current of the films during deposition is strongly denpent on the ambient gas and substrate temperature. Because of increase of activation energy, leakage current increased at high temperature and resistivity of the films was decreased. According to the increase of oxygen gas flow rate, the conductivity of thin film capacitor was increased and leakage current was decreased.

• ETRI Journal
• /
• v.35 no.6
• /
• pp.1156-1159
• /
• 2013

We investigate the characteristics of $Cu_2O$ thin films deposited through the addition of $N_2$ gas. The addition of $N_2$ gas has remarkable effects on the phase changes, resulting in improved electrical and optical properties. An intermediate phase ($6CuO{\cdot}Cu_2O$) appears at a $N_2$ flow rate of 1 sccm, and a $Cu_2O$ (200) phase is then preferentially grown at a higher feeding amount of $N_2$. The optical and electrical properties of $Cu_2O$ thin films are improved with a sufficient $N_2$ flow rate of more than 15 sccm, as confirmed through various analyses. Under this condition, a high bandgap energy of 2.58 eV and a conductivity of $1.5{\times}10^{-2}$ S/cm are obtained. These high-quality $Cu_2O$ thin films are expected to be applied to $Cu_2O$-based heterojunction solar cells and optical functional films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.260-261
• /
• 2008

In this study, we investigated the properties of Indium Zinc Oxide (IZO) films prepared in facing targets sputtering (FTS) system at room temperature as function of oxygen contents. As as-deposited films were rapidly thermal annealing on air atmosphere of $400^{\circ}C$ for 30s. As a result, the transmittance of IZO films increased with increasing oxygen flow in the visible range. After rapidly thermal annealing to films, the optical properties of films improved than films deposited at R.T, but the electrical properties decreased. Before RTA treatment, the lowest resistivity IZO is $5.4\times10^{-4}[\Omega{\cdot}cm]$ at oxygen gas flow. But, after RTA treatment, IZO films have the value of lowest resistivity at the lower oxygen gas ratio in compare with before RTA treatment. The resistivity of IZO films is $7.29\times10^{-4}[\Omega{\cdot}cm]$ at pure argon atmosphere.

• Journal of the Korean Chemical Society
• /
• v.38 no.3
• /
• pp.214-220
• /
• 1994

A glow discharge atomic absorption system for the direct analysis of conducting solid samples has been designed and constructed. An arrestor made of machinable ceramic which is a main component for confining the discharge between cathode and anode is modified to have a better stability in discharge. Discharge voltage or current, shape of arrestor, pressure, and gas flow rate can be controlled by an ADC/DAC board with a personal computer. The effect of discharge parameters such as discharge voltage, pressure, and gas flow rate on the sample loss rate, absorbance, and the surface morphology of sample by SEM has been studied to find optimum discharge conditions.

• Journal of the Korean Vacuum Society
• /
• v.8 no.2
• /
• pp.141-147
• /
• 1999

The electrochromic characteristics of tungsten oxide films are largely affected by deposition conditions, such as substrate temperature and gas flow rate and also post-annealing. We have considered gas flow rate and temperature as important factors having an effect on an electrical, optical phenomenon and structural variation of $WO_3$ . The tungsten oxide films were deposited onto ITO(20$\Omega\box$, 1000$\AA$) using rf magnetron sputtering method. In particular, the films deposited at room temperature were annealed at various temperatures in air. All specimens had crystal structure except one being deposited at room temperature with nearly amorphous-like structure. The specimen deposited at $100^{\circ}C$ had a structure in which the increase in deposition temperature. The specimen deposited at $100^{\circ}C$ had a structure in which the cations$(Li^+)$ are easily movable because of void boundaries induced by regularly arrayed large grains. The specimen deposited at $300^{\circ}C$ had a dense structure with small grains but it exhibited the large mobility and charge density in $WO_3$ because of distinct grain boundaries.

• Journal of the Korean Vacuum Society
• /
• v.21 no.4
• /
• pp.212-218
• /
• 2012

The optical properties of AZO thin films prepared by the RF mangnetron sputtering system was studied to research the dependance of chemical properties of substrate. The substrate was the SiOC film deposited by Inductively coupled plasma chemical vapor deposition with various gas flow rate of $O_2$ and Ar (DMDMOS). In accordance with the increase of Ar gas flow rates, the Si-O bond in the SiOC film increased and then progressed the amorphism. The roughness of AZO grown on SiOC film with high degree of amorphism decreased and then improved the flatness of surfaces. Moreover, the ultra violet emission with high intensity was spontaneously induced in the AZO film growed on SiOC film with high degree of amorphism.