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http://dx.doi.org/10.4218/etrij.13.0213.0216

The Characteristics of $Cu_2O$ Thin Films Deposited Using RF-Magnetron Sputtering Method with Nitrogen-Ambient  

Lee, Seong Hyun (Components & Materials Research Laboratory, ETRI, Department of Advanced Device Engineering, University of Science and Technology)
Yun, Sun Jin (Components & Materials Research Laboratory, ETRI)
Lim, Jung Wook (Components & Materials Research Laboratory, ETRI)
Publication Information
ETRI Journal / v.35, no.6, 2013 , pp. 1156-1159 More about this Journal
Abstract
We investigate the characteristics of $Cu_2O$ thin films deposited through the addition of $N_2$ gas. The addition of $N_2$ gas has remarkable effects on the phase changes, resulting in improved electrical and optical properties. An intermediate phase ($6CuO{\cdot}Cu_2O$) appears at a $N_2$ flow rate of 1 sccm, and a $Cu_2O$ (200) phase is then preferentially grown at a higher feeding amount of $N_2$. The optical and electrical properties of $Cu_2O$ thin films are improved with a sufficient $N_2$ flow rate of more than 15 sccm, as confirmed through various analyses. Under this condition, a high bandgap energy of 2.58 eV and a conductivity of $1.5{\times}10^{-2}$ S/cm are obtained. These high-quality $Cu_2O$ thin films are expected to be applied to $Cu_2O$-based heterojunction solar cells and optical functional films.
Keywords
Cuprite; nitrogen; $Cu_2O$; high energy gap; sputter;
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