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Monitoring and Controlling Uniformity of Plasma Emission Intensity for IGZO Sputtering Process  

Choi, Jinwoo (Kwangwoon Univ. Dep. of Electrical and Biological Physics)
Hwang, Sang Hyuk (Kwangwoon Univ. Dep. of Electrical and Biological Physics)
Kim, Woo Jae (Kwangwoon Univ. Dep. of Electrical and Biological Physics)
Shin, Gi Won (Kwangwoon Univ. Dep. of Electrical and Biological Physics)
Kwon, Heui Tae (Kwangwoon Univ. Dep. of Electrical and Biological Physics)
Jo, Tae Hoon (Kwangwoon Univ. Dep. of Electrical and Biological Physics)
Woo, Won Gyun (WONWOO SYSTEMS CO., LTD.)
Cha, Sung Duk (WONWOO SYSTEMS CO., LTD.)
An, Byung Chul (AVACO CO., LTD.)
Park, Wan Woo (AVACO CO., LTD.)
Do, Jae Chul (AVACO CO., LTD.)
Kwon, Gi-Chung (Kwangwoon Univ. Dep. of Electrical and Biological Physics)
Publication Information
Journal of the Semiconductor & Display Technology / v.15, no.4, 2016 , pp. 27-32 More about this Journal
Abstract
In recent years, various researches have been conducted to improve process yields in accordance with miniaturization of semiconductor. APC(Advanced Process Control) is considered one of the methods to increase in process yields. APC is a process control technology that maintains optimal process conditions and improves the reliability of results by controlling and formulating the relationship among the various process parameters and results. We built up an optical diagnostic system with a three-channel spectrometer. The system detects signals those represent the changes of specific emission peaks intensity versus each reference and converts it into MFC control signals to get back the changes to the reference state. Controlling the MFC continues until the specific peak intensity changes into the normal state. Through this device, we tested a APC automatically responding to process changes during the plasma process. We could control gas flow while sputtering process on going and improve uniformity of plasma intensity with this system. Finally, we have got results those enhance the plasma intensity non-uniformity to 7.7% from 15.5%. Also, found unexpected oxygen flow what is estimated to be come out from IGZO target.
Keywords
Process plasma; Diagnostics; APC; OES; Sputtering; IGZO; Process control; Oxygen;
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Times Cited By KSCI : 4  (Citation Analysis)
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