• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.9
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• pp.1227-1233
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• 2010

In the hot section of a gas turbine, the turbine blades were protected from high temperature by providing a thermal barrier coating (TBC) as well as by cooling air flowing through internal passages within the blades. The cooling air then passed through discrete holes on the blade surface, creating a film of cooling air that further protects the surface from the hot mainstream flow. The holes are subjected to stresses resulting from the lateral growth of thermally grown oxide, the thermal expansion misfit between the constituent layers, and the centrifugal force due to high-speed revolution; these stresses often result in cracking. In this study, the deformation and cracks occurring near a hole on a heat-resistant alloy subjected to thermo-mechanical cycling were investigated. The experiment showed that cracks formed around the hole depending on the applied stress level and the number of cycles. These results could be explained by our analytic solution.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.199-199
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• 2010

최근 평판 디스플레이 산업의 발전에 따라 능동행렬 액정 표시 소자 (AMOLED : Active Matrix Organic Liquid Crystral Display) 가 차세대 디스플레이 분야에서 각광을 받고있다. 기존의 TFT-LCD에 사용되는 a-Si:H는 균일도가 좋지만 전기적인 스트레스에 의해 쉽게 열화되고 낮은 이동도는 갖는 단점이 있으며, ELA (Eximer Laser Annealing) 결정화 poly-Si은 전기적인 특성은 좋지만 uniformity가 떨어지는 단점을 가지고 있어서 AMOLED 및 대면적 디스플레이에 적용하기 어렵다. 따라서 a-Si:H TFT보다 좋은 전기적인 특성을 보이며 ELA 결정화 poly-Si TFT보다 좋은 uniformity를 갖는 SPC (Solid Phase Crystallization) poly-Si TFT가 주목을 받고있다. 본 연구에서는 차세대 디스플레이 적용을 위해서 glass 기판위에 증착된 a-Si을 SPC 로 결정화 시킨 후 TFT를 제작하고 평가하였다. 또한 TFT 형성시에 저온공정을 실현하기 위해서 소스/드레인 영역에 실리사이드를 형성시켰다. 소자 제작시의 최고온도는 $500^{\circ}C$ 이하에서 공정을 진행하는 저온 공정을 실현하였다. Glass 기판위에 a-Si이 80 nm 증착된 기판을 퍼니스에서 24시간 동안 N2 분위기로 약 $600^{\circ}C$ 에서 결정화를 진행하였다. 노광공정을 통하여 Active 영역을 형성시키고 E-beam evaporator를 이용하여 약 70 nm 의 Pt를 증착시킨 후, 소스와 드레인 영역의 실리사이드 형성은 N2 분위기에서 $450^{\circ}C$, $500^{\circ}C$, $550^{\circ}C$에서 열처리를 통하여 형성하였다. 게이트 절연막은 스퍼터링을 이용하여 SiO2를 약 15 nm 의 두께로 증착하였다. 게이트 전극의 형성을 위하여 E-beam evaporator 을 이용하여 약 150 nm 두께의 알루미늄을 증착하고 노광공정을 통하여 게이트 영역을 형성 후 에 $450^{\circ}C$, H2/N2 분위기에서 약 30분 동안 forming gas annealing (FGA)을 실시하였다. 제작된 소자는 실리사이드 형성 온도에 따라서 각각 다른 특성을 보였으며 $450^{\circ}C$에서 실리사이드를 형성시킨 소자는 on currnet와 SS (Subthreshold Swing)이 가장 낮은것을 확인하였다. $500^{\circ}C$와 $550^{\circ}C$에서 실리사이드를 형성시킨 소자는 거의 동일한 on current와 SS값을 나타냈다. 이로써 glass 기판위의 SB-TFT 제작 시 실리사이드 형성의 최적온도는 $500^{\circ}C$로 생각되어 진다. 위의 결과를 토대로 본 연구에서는 SPC 결정화 방법을 이용하여 SB-TFT를 성공적으로 제작 및 평가하였고, 차세대 디스플레이에 적용할 경우 우수한 특성이 기대된다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.54.2-54.2
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• 2010

최근까지는 주로 비정질 실리콘이 디스플레이의 채널층으로 상용화 되어왔다. 비정질 실리콘 기반의 박막 트랜지스터는 제작의 경제성 및 균일성을 가지고 있어서 널리 상용화되고 있다. 하지만 비정질 실리콘의 구조적인 문제인 낮은 전자 이동도(< $1\;cm^2/Vs$)로 인하여 디스플레이의 대면적화에 부적합하며, 광학적으로 불투명한 특성을 갖기 때문에 차세대 디스플레이의 응용에 불리한 점이 있다. 이런 문제점의 대안으로 현재 국내외 여러 연구 그룹에서 산화물 기반의 반도체를 박막 트랜지스터의 채널층으로 사용하려는 연구가 진행중이다. 산화물 기반의 반도체는 밴드갭이 넓어서 광학적으로 투명하고, 상온에서 증착이 가능하며, 비정질 실리콘에 비해 월등히 우수한 이동도를 가짐으로 디스플레이의 대면적화에 유리하다. 특히 Zinc Oxide의 경우, band gap이 3.4eV로써, transparent conductors, varistors, surface acoustic waves, gas sensors, piezoelectric transducers 그리고 UV detectors 등의 많은 응용에 쓰이고 있다. 또한, a-Si TFTs에 비해 ZnO-based TFTs의 경우 우수한 소자 성능과 신뢰성을 나타내며, 대면적 제조시 우수한 균일성 및 낮은 생산비용이 장점이다. 그러나 ZnO-baesd TFTs의 경우 일정한 bias 아래에서 threshold voltage가 이동하는 문제점이 displays의 소자로 적용하는데 매우 중요하고 문제점으로 여겨진다. 특히 gate insulator와 channel layer사이의 interface에서의 defect에 의한 charge trapping이 이러한 문제점들을 야기한다고 보고되어진다. 본 연구에서는 Zinc Oxide 기반의 박막 트랜지스터를 DC magnetron sputtering을 이용하여 상온에서 제작을 하였다. 또한, $Si_3N_4$ 기판 위에 electron cyclotron resonance (ECR) $O_2$ plasma 처리와 plasma-enhanced chemical vapor deposition (PECVD)를 통하여 $SiO_2$ 를 10nm 증착을 하여 interface의 개선을 시도하였다. 그리고 TFTs 소자의 출력 특성 및 전이 특성을 평가를 하였고, 소자의 field effect mobility의 값이 향상을 하였다. 또한 Temperature, Bias Temperature stability의 조건에서 안정성을 평가를 하였다. 이러한 interface treatment는 안정성의 향상을 시킴으로써 대면적 디스플레의 적용에 비정질 실리콘을 대체할 유력한 물질이라고 생각된다.

• Korean Journal of Materials Research
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• v.8 no.11
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• pp.1067-1073
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• 1998

High quality diamond films of the silicon on diamond (SOD) structure are deposited using CO and $H_2$ gas mixture in microwave plasma chemical vapor deposition (CVD), a SOD structure is fabricated using low pressure CVD polysilicon on diamond/ Si(100) substrate. The crystalline structure of the diamond films which composed of { 111} and {100} planes. were changed from octahedral one to cubo-octahedron one as the CO/$H_2$ ratios are increased. The high quality diamond films without amorphous carbon and non-diamond elements were deposited at the CO/$H_2$ flow rate of 0.18. and the main phase of the diamond films shows (111) plane. The diamond/Si(lOO) structure shows that the interface is flat without voids. The measured dielectric constant. leakage current and breakdown field were $5.31\times10^{-9}A/cm^2$ and $9\times{10^7}{\Omega}cm$ respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.21-25
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• 2001

In this study, recovery of plasma etching· damage in PZT thin film with additive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of $Cl_2/CF_4$ with addition of Ar and $O_2$ with inductively induced plasma. The etch rates of PZT thin films were 1450 $\AA$/min at 30% additive Ar into $(Cl_2(80%)+CF_4 (20%))$ and 1100 $\AA$/min at 10% additive $O_2$ into $C(Cl_2(80%)+CF_4(20%))$. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in at $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of $Ti_xO_y$ is recovered by $O_2$ recombination during rapid thermal annealing process.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1555-1558
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon(${\mu}c$-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_4$ Concentration$[F(SiH_4)/F(SiH_4)+F(H_2)]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c$-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c$-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_2H_6$ to $SiH_4$ gas. The solar cells with structure of Al/nip ${\mu}c$-Si:H/TCO/glass was fabricated with sing1e chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.10a
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• pp.56-56
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• 1999

For advanced TFT-LCD manufacturing processes, dry etching of thin-film layers(a-Si, $SiN_x$, SID & gate electrodes, ITO etc.) is increasingly preferred instead of conventional wet etching processes. To dry etch Al gate electrode which is advantageous for reducing propagation delay time of scan signals, high etch rate, slope angle control, and etch uniformity are required. For the Al gate electrode, some metals such as Ti and Nd are added in Al to prevent hillocks during post-annealing processes in addition to gaining low-resistivity($<10u{\Omega}{\cdot}cm$), high performance to heat tolerance and corrosion tolerance of Al thin films. In the case of AI-Nd alloy films, however, low etch rate and poor selectivity over photoresist are remained as a problem. In this study, to enhance the etch rates together with etch uniformity of AI-Nd alloys, magnetized inductively coupled plasma(MICP) have been used instead of conventional ICP and the effects of various magnets and processes conditions have been studied. MICP was consisted of fourteen pairs of permanent magnets arranged along the inside of chamber wall and also a Helmholtz type axial electromagnets was located outside the chamber. Gas combinations of $Cl_2,{\;}BCl_3$, and HBr were used with pressures between 5mTorr and 30mTorr, rf-bias voltages from -50Vto -200V, and inductive powers from 400W to 800W. In the case of $Cl_2/BCl_3$ plasma chemistry, the etch rate of AI-Nd films and etch selectivity over photoresist increased with $BCl_3$ rich etch chemistries for both with and without the magnets. The highest etch rate of $1,000{\AA}/min$, however, could be obtained with the magnets(both the multi-dipole magnets and the electromagnets). Under an optimized electromagnetic strength, etch uniformity of less than 5% also could be obtained under the above conditions.

• Journal of Korean Society for Atmospheric Environment
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• v.19 no.E3
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• pp.121-127
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• 2003

The characteristics of heterogeneous photocatalytic decomposition were investigated at low concentration level of $O_3$on TiO$_2$for various operating parameters such as: loaded catalyst weight (0∼4 mg/$\textrm{cm}^2$), initial concentration of $O_3$(0.06∼10.0 ppm), gas flow rate (1.0 ∼ 2.5ι/min), and relative humidity (0∼80%). This study was conducted using a flow-type reactor at room temperature. Three kinds of pure TiO$_2$(P25, ST -01, and E- 23) were employed as photocatalyts. It was found that $O_3$removal ratio was identical, regardless of the loaded TiO$_2$weight in the range from 0.5 to 4.0 mg/$\textrm{cm}^2$. It was also found that higher initial ozone concentration results in greater oxidation rate of ozone and experimental data show kinetically a good agreement with Langmur-Hinshelwood kinetic model. We also observed that the removal ratio of $O_3$increases linearly with the increasing flow rate and also with the increasing relative humidity for each catalyst.

• Progress in Superconductivity
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• v.8 no.1
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• pp.59-64
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• 2006

High $J_c\;YBa_2Cu_3O_x$ superconducting films were fabricated by MOD method using fluorine-free dichloroacetic acid(DCA) as chelating solvent for preparing precursor solution. Coating solutions were prepared by dissolving Y-, Ba- and Cu-acetates in DCA solvent followed by drying in rota vapor to obtain the blue gel that is diluted in methanol and 2-methoxyethanol for adjusting the cation concentration. DCA-MOD precursor solution was coated on a single crystal(001) $LaAlO_3(LAO)$ substrate by a dip coating method with a speed of 25 mm/min. Coated films were calcined at lower temperature up to $500^{\circ}C$ in flowing oxygen atmosphere with a 7.2% humidity. Conversion heat treatment was performed at various temperatures of $780{\sim}810^{\circ}C$ for 2 h in flowing Ar gas containing 1000 ppm oxygen with a humidity of 9.45%. SEM observations showed that films have very dense microstructures for the films prepared at the temperature higher than $800^{\circ}C$ regardless of diluting solvent; methanol or 2-methoxyethanol. X-ray diffraction analysis showed that YBCO grains grew with a (001) preferred orientation. A High critical current density($J_c$) of 1.28 $MA/cm^2$(@77 K and self-field) was obtained id. the YBCO film prepared using 2-methoxyethanol as a solvent.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.109-112
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• 2008

The miniaturization of device size and submicron process causes serious problems in conventional metallization due to the solubility of silicon and metal at the interface, such as an increasing contact resistance in the contact hole and interdiffusion between metal and silicon. Moreover, the interaction between Cu and Si is so strong and detrimental to the electrical performance of Si even at temperatures below $200^{\circ}C$. Therefore it is necessary to implement a barrier layer between Cu and Si. So we study W-C-N diffusion barrier for prevent Cu diffusion as a function of $N_2$ gas flow and thermal stability. Especially, we also study the W-C-N diffusion barrier for analyzing the change of lattice constants.