• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.170-174
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• 2017

In 3 electrode reflective displays using a plastic substrate, unstable packaging induces particle clumping and optical degradation due to external air inflow and electronic ink evaporation. In this work, we fabricate 3 electrode electronic paper using glass wafer, ITO/plastic film, and ITO/glass/gas barrier film as an upper substrate after injecting electronic ink onto the lower substrate. Then, we studied its properties. After operating under stress conditions for 336 hours at $85^{\circ}C$ and 75% humidity, the reflectivity of driven e-paper panels with white color was 25.5% for the panels using glass wafer, 22.5% for plastic film including a gas barrier layer, and 16% for plastic film only. From these optical properties, we conclude that gas barrier film improves upper film isolation as a desirable packaging method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.17-17
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• 2010

We investigate CO gas sensing properties of multilayered TiO2 thin film gas sensors fabricated by colloidal templating of 300 nm of polymer spheres. Compared with plain films, the multilayered films show enhanced gas sensing with higher sensitivity and faster response. Also, colloidal templating by using smaller spheres (300 nm in diameter) leads to close-packed multilayered TiO2 thin films with very large-scale. This result suggest that understanding and control of the structures on the sensing properties of multilayered TiO2 thin films by colloidal templating is important in developing the films for real applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.136-139
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• 2003

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a-C:H thin film as working gas at 30W rf bias condition. A high pretilt angle of about $5^{\circ}$ by ion beam(IB) exposure on the a-C:H thin film surface was measured. A good LC alignment by the IB alignment method on the a-C:H thin film surface was observed at annealing temperature of $250^{\circ}C$, and the alignment defect of the NLC was observed above annealing temperature of $300^{\circ}C$. Consequently, the high LC pretilt angle and the good thermal stability of LC alignment by the IB alignment method on the a-C:H thin film surface as working gas at 30W rf bias condition can be achieved.

• 센서학회지
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• 제29권1호
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• pp.14-18
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• 2020

This study investigates the nitrogen dioxide (NO₂) sensing characteristics of an Si MOSFET gas sensor with a tungsten trioxide (WO₃) sensing layer deposited using the sputtering method. The Si MOSFET gas sensor consists of a horizontal floating gate (FG) interdigitated with a control gate (CG). The WO₃ sensing layer is deposited on the interdigitated CG-FG of a field effect transistor(FET)-type gas sensor platform. The sensing layer is deposited with different thicknesses of the film ranging from 100 nm to 1 ㎛ by changing the deposition times during the sputtering process. The sensing characteristics of the fabricated gas sensor are measured at different NO₂ concentrations and operating temperatures. The response of the gas sensor increases as the NO₂ concentration and operating temperature increase. However, the gas sensor has an optimal performance at 180℃ considering both response and recovery speed. The response of the gas sensor increases significantly from 24% to 138% as the thickness of the sensing layer increases from 100 nm to 1 ㎛. The sputtered WO₃ film consists of a dense part and a porous part. As reported in previous work, the area of the porous part of the film increases as the thickness of the film increases. This increased porous part promotes the reaction of the sensing layer with the NO₂ gas. Consequently, the response of the gas sensor increases as the thickness of the sputtered WO₃ film increases.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2005년도 창립60주년 기념 추계 학술대회
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• pp.23.2-23.2
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• 2005

• 센서학회지
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• 제5권2호
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• pp.21-27
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• 1996

부탄가스 감지를 위해 $WO_{3}$를 기본물질로 하고 산화물을 첨가제로 한 후막형 가스감지 소자를 스크린 프린팅법으로 제조하였고 가스에 대한 감도특성 등을 조사하였다. 첨가 산화물중 $TiO_{2}$를 첨가한 $WO_{3}$ 후막의 부탄가스에 대한 감도가 다른 첨가물을 적용한 후막의 감도보다 상대적으로 높음을 알 수 있었고, $TiO_{2}$의 첨가량이 2wt.%일 때 가장 높은 감도를 나타냄을 알 수 있었다. 열처리 온도를 $900^{\circ}C$까지 변화시켜 보았는데 $650^{\circ}C$일 때 가장 좋은 감도를 나타냈으며, 동작온도를 $400^{\circ}C$까지 변화시켰을 때 $350^{\circ}C$에서 가장 좋은 감도를 가짐을 알 수 있었다. $WO_{3}$에 $TiO_{2}$를 2wt.% 첨가하고, $650^{\circ}C$에서 열처리한 후막의 동작온도 $350^{\circ}C$에서 공기중 20000ppm의 부탄가스에 대해 80%의 감도를 나타내었다.

• 한국재료학회지
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• 제23권9호
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• pp.517-524
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• 2013

The electrical and optical properties of fluorine-doped tin oxide films grown on polyethylene terephthalate film with a hardness of 3 using electron cyclotron resonance plasma with linear microwave of 2.45 GHz of high ionization energy were investigated. Fluorine-doped tin oxide films with a magnetic field of 875 Gauss and the highest resistance uniformity were obtained. In particular, the magnetic field could be controlled by varying the distribution in electron cyclotron deposition positions. The films were deposited at various gas flow rates of hydrogen and carrier gas of an organometallic source. The surface morphology, electrical resistivity, transmittance, and color in the visible range of the deposited film were examined using SEM, a four-point probe instrument, and a spectrophotometer. The electromagnetic field for electron cyclotron resonance condition was uniformly formed in at a position 16 cm from the center along the Z-axis. The plasma spatial distribution of magnetic current on the roll substrate surface in the film was considerably affected by the electron cyclotron systems. The relative resistance uniformity of electrical properties was obtained in film prepared with a magnetic field in the current range of 180~200A. SEM images showing the surface morphologies of a film deposited on PET with a width of 50 cm revealed that the grains were uniformly distributed with sizes in the range of 2~7 nm. In our experimental range, the electrical resistivity of film was able to observe from $1.0{\times}10^{-2}$ to $1.0{\times}10^{-1}{\Omega}cm$ where optical transmittance at 550 nm was 87~89 %. These properties were depended on the flow rate of the gas, hydrogen and carrier gas of the organometallic source, respectively.

• Nuclear Engineering and Technology
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• 제56권7호
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• pp.2881-2892
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• 2024

Annular flow refers to a special type of two-phase flow pattern in which liquid flows as a thin film at the periphery of a pipe, tube, or conduit, and gas with relatively high velocity flows at the center of the flow section. This gas also includes dispersed liquid droplets. The liquid film flow rate continuously changes inside the tube due to two processes-entrainment and deposition. To determine the liquid holdup, pressure drop, the onset of dryout, and heat transfer characteristics in annular flow, it is important to have proper knowledge of flow characteristics. Especially a better understanding of entrainment fraction is important for the heat transfer and safe operation of two-phase flow systems operating in an annular two-phase flow regime. Therefore, the objective of this work is to develop a computational model for the simulation of the annular two-phase flow regime and assess the various existing models for the entrainment rate. In this work, Computational Fluid Dynamics (CFD) in ANSYS FLUENT has been applied to determine annular flow characteristics such as liquid film thickness, film velocity, entrainment rate, deposition rate, and entrainment fraction for various gas-liquid flow conditions in a vertical upward tube. The gas core with droplets was simulated using the Discrete Phase Model (DPM) which is based on the Eulerian-Lagrangian approach. The Eulerian Wall Film (EWF) model was utilized to simulate liquid film on the tube wall. Three different models of Entrainment rate were implemented and assessed through user-defined functions (UDF) in ANSYS. Finally, entrainment for fully developed flow was determined and compared with the experimental data available in the literature. From the simulations, it was obtained that the Bertodano correlation performed best in predicting entrainment fraction and the results were within the ±30 % limit when compared to experimental data.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2007년도 제29회 추계학술대회논문집
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• pp.170-173
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• 2007

본 연구에서는 액체로켓엔진 내부에 라이너를 설치하고 기체 질소를 이용한 막냉각 방법을 사용하여, 라이너의 막냉각 특성을 살펴보았다. 고온 가스는 액체로켓 연소가스와 액체질소를 혼합하여 사용하였다. 기존의 액체로켓엔진 시험 설비에 추가적으로 라이너 냉각 기체를 공급 설비를 구축하였으며, 라이너 및 냉각 기체 공급부를 제작하였다. 10초 연소 실험을 통해 라이너 내부 고온 가스의 온도와 라이너 외부 벽면 온도를 측정하였으며, 기체 질소에 의한 라이너 냉각 특성을 확인하였다.

• Journal of Advanced Marine Engineering and Technology
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• 제18권2호
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• pp.54-63
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• 1994

Mg thin films were prepared on SPCC(cold-rolled steel) substrates by vasuum evapoaration and ion-plating. The influence of argon gas pressure and substrates bias voltage on the crystal orientation and morphology of the film was determined by using X-ray diffraction and scanning electron micrography (SEM), respectively. And the effect of crystal orientation and morphology of the Mg thin films on corrosion behavior was estimated by measuring the anodic polarization curves in deaerated 3% NaCl solution. The crystal orientation of the Mg films deposited at high argon gas pressure exhibited a (002) preferred orientation, regardless of the substrate bias voltage. Film morphology changed from a columnar to a granular structure with the increase of argon gas pressure. The morphology of the films depended not only on argon gas pressure but also bias voltage ; i.e., the effect of increasing bias voltage was similar to that of decreasing argon gas pressure. The influences of argon gas pressure and bias voltage were explained by applying the adsorption inhibitor theory and the sputter theory. And also, this showed that the corrosion resistance of the Mg thin films can be changed by controlling the crystal orientaton and morphology.