• Journal of Sensor Science and Technology
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• v.13 no.4
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• pp.292-297
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• 2004

Carbon nanotubes (CNT) were synthesized by arc-discharge method. To fabricate CNT sensor, CNT powder was dispersed in ${\alpha}$-Terpinol($C_{10}H_{17}OH$) solution. The CNT tilms were fabricated by screen printing method on the interdigitated Pt/Pd alloy electrode. The microstructure of CNT film was observed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). In order to investigate the gas sensing characteristics of the film, the CNT film was experimented to measure NO response and recovery time. The CNT sensor with a heater was compared to that without a heater. And this sensor shows better reproductibility and faster recovery time than another CNT sensors. We suggest the possibility to utilize a CNT as new sensing materials for environmental monitoring.

• Electrical & Electronic Materials
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• v.11 no.10
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• pp.78-80
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• 1998

Metallo-phthalocyanines(MPcs) are very sensitive to toxic molecules such as electron affinitive NO2 gas and also chemically and thermally stable since losts of MPcs have been studied for the potential chemcial gas sensors for $NO_2$ using their electrical conductivity. In this study, thin films of octa-dodecyloxy copper -phthalocyanine were prepared by Langmuir-Blodgett(LB) method and characterized by using UV/Vis absorption spectroscopy, and ellipsometry. It was found that the proper transfer surface pressure for the film deposition was 25mN/m and the limiting area per molecule was $112\AA$/molecule. The film thickness of one layer was $64\AA$. Current-voltage(I-V) characteristics of these films were investigated as a function of film thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1230-1233
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• 2004

Ozone is useful oxidizing gas for the fabrication of oxide thin films. Accordingly researching on oxidizing gas is required. In order to obtain high quality oxide thin films, higher ozone concentration is necessary. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.110-113
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• 2005

Ozone is useful oxidizing gas for the fabrication of BSCCO thin films. In order to obtain high quality oxide BSCCO thin films, higher ozone concentration is necessary. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.32 no.12
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• pp.1369-1376
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• 1995

The WO3 thin-film NOx sensor which is of practical use and includes the heater and the temperature sensor was fabricated. The WO3 thin films as a gas-sensing layer was deposited at ambient temperature in a high-vacuum resistance heated evaporator. The highest sensitivity of the WO3 thin-film sensor to NOx was obtained under the condition of the annealing temperature of 50$0^{\circ}C$ and the operating temperature of 30$0^{\circ}C$. The gas sensing characteristics of this sensor was excellent, i.e. high sensitivity (Rgas/Rair in 3 ppm NO2=53) and fast response time (4 seconds).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.317-319
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• 2000

We fabricated the QCM with Langmuir-Blodgett(LB) film deposited at the different subphase pH and investigated the resonant frequency response by the injection of organic gas response. In the $\pi$-A isotherms, the monolayer on the air/water interface had different limiting area per molecule and showed more condensed status as increasing the subphase pH. When palmitic acid LB film was deposited on the QCM, the resonant frequency shift was proportional to the deposited layer and had more resonant frequency shift in the case of the higher pH range as expected. In the resonant frequency for the injection of organic gas, it has been improved in the case of LB film fabricated at the lower subphase pH range and dependant upon the molecular weight of organic gas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04a
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• pp.35-38
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• 2004

Ozone is useful oxidizing gas for the fabrication of oxide thin films. Accordingly researching on oxidizing gas is required. In order to obtain high quality oxide thin films, higher ozone concentration is necessary. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

• Journal of Sensor Science and Technology
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• v.19 no.5
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• pp.356-360
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• 2010

Due to the high surface-to-volume ratio, the 3-dimensional(3D) nanostructures of metal oxides are regarded as the best candidate materials for the chemical gas sensors. Here we have synthesised flower-like 3D zinc oxide nanostructures through a simple hydrothermal route. Specific surface area of the 3D zinc oxide nanostructures synthesised in different pH values from 9.0 to 12.0 were evaluated by using a BET analyzer and the results were compared with that of a zinc oxide thin film fabricated by rf sputtering. Using interdigitated electrodes, superior CO gas sensing properties of the 3D zinc oxide nanostructures on the ZnO thin film to those of the ZnO thin film were demonstrated.

• Geosystem Engineering
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• v.21 no.6
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• pp.318-325
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• 2018

Eight tight sandstone reservoir samples from $He_8$ and $Shan_1$ Formations of the Sulige Gas field were selected to perform gas-water micro-displacement experiment based on authentic sandstone micro-model. The gas pressure-relief experiment was proposed for the first time to simulate the pressure change and gas-water percolation characteristics in the process of gas exploitation. The experiment results show that: (1) In the process of gas accumulation, the gas preferentially flows into the well-connected pores and throats with large radius, but rarely flows into the area without pores and throats. (2) Under sufficient gas drive, the water in pores and throats usually exists in the forms of 'thin water film', 'thick water film', and 'water column', but under insufficient gas drive, gas fails to flow into new pathways in time, so that the reservoirs with large pores and throats are high in water cut. (3) Under the same water saturation, the reservoirs with better petrophysical properties has higher gas recovery factor within unit time. Under the same petrophysical conditions, the reservoirs with lower water saturation show higher gas recovery factor within unit time. The higher the permeability, the stronger the liquid carrying capacity of reservoirs.

• Journal of the Korean Society for Heat Treatment
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• v.14 no.3
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• pp.151-154
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• 2001

$TiO_2$ thin film has wide application because of its high capacitanca, reflection, and good transmissivity in visible range. $TiO_2$ thin film can be made by thermal deposition method, reactive evaporation method, activated reactive evaporation(ARE) method. In the case of thermal deposition, the oxygen deficiency can occur because the melting point of Ti is very high. While in the case of reactive evaporation, high density $TiO_2$ can not be made, because reactive gas($O_2$) and evaporated material(Ti) are not fully combined, activated reactive evaporation, $TiO_2$ is easily deposited at lower gas pressure compared with reactive evaporation because the ionized reactive gas is made by plasma. Therefore, activated reactive evaporation is very useful to deposit the material having the high melting point. In this work, we formed $TiO_2$ thin film by activated reactive evaporation method. The surface of $TiO_2$ thin film was analyzed by X-ray photoelectron spectroscopy. The surface morphology which was analyzed by atomic force microscopy(AFM) shows that feature of the film surface is uniform. The dielectric capacitance, withstanding voltage were $600{\mu}F/cm^2$, 0.4V respectively. In further work, we can increase the withstanding voltage by improving the deposition parameter of substrates.