• Journal of Welding and Joining
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• v.5 no.2
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• pp.17-26
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• 1987

In this study, the experiments were carried out for the purpose of establishment of the arc sparing method which reducing oxides or oxide film by using the inert gas as the carrier gas of atomizing particles. Main results obtained are as follows; 1. Oxides and oxide film which lower the adhesion strength are largely reduced by using the inert gas as the carrier gas of atomizing particles, and adhesion strength of coating film are improved. 2. The coating film characteristics appear to be no difference between the inert gas arc spraying in air environment and that in argon gas environment. 3. Inert gas arc spraying using argon as the carrie gas has higher reduction rate of composition element in coating film than compressed air spraying does.

• Korean Journal of Medicinal Crop Science
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• v.28 no.2
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• pp.152-166
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• 2020

Background: Ginsenosides, which have various physiological activities, are known to be abundant in the leaves and roots of ginseng. Ginseng sprouts can be used as a fresh vegetable and roots, stems, and leaves of ginseng can be consumed. This study aimed to investigate the effect of carbon dioxide treatment and the modified atmosphere (MA) packaging method in suppressing quality deterioration during the distribution of ginseng sprouts. Methods and Results: Ginseng sprouts were packed using Styrofoam, barrier film + non gas treatment, barrier film + gas treatment, 15 ㎛ polyamide (PA) double film + non gas treatment, 15 ㎛ PA double film + gas treatment, 25 ㎛ PA film + non gas treatment, or 25 ㎛ PA film + gas treatment. Quality parameters including gas composition, relative humidity, chlorophyll SPAD (Soil Plant Analysis Development) value, firmness, and rate of quality loss in ginseng sprouts were monitored at the following temperatures: 20℃, and 10℃. Ginseng sprouts packaged with 25 ㎛ PA film showed loss in quality because of wilting owing to low relative humidity within the film. Chlorophyll and firmness did not differ between film and gas treatments. The time point at which the combined loss from softening and decay owing to fungal, and bacterial infection and wilt reached 20% was considered the limit of distribution. At 20℃, the packaging not included in the 20% distribution loss rate limit or up to 7 days was 15 ㎛ PA double film + gas treatment. At 10℃, the packaging not included in the 20% distribution loss rate limit for up to 18 days were barrier film + gas treatment and 15 ㎛ PA double film + gas treatment. Conclusions: The film packaging suitable for the distribution of ginseng sprouts was found to be the barrier film and PA film with low gas permeability and maintaining hygroscopicity at 95% relative humidity. To prevent the loss in quality of ginseng sprouts, gas treatment (8% of O₂ and 18% of CO₂) in the film was found to be more suitable than no gas treatment for inhibition of decay.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.7
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• pp.521-526
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• 2018

In particular, gas sensors require characteristics such as high speed, sensitivity, and selectivity. In this study, we fabricated a $NO_X$ gas sensor by using a multi-walled carbon nanotube (MWCNT)/zinc oxide (ZnO) composite film. The fabricated MWCNT/ZnO gas sensor was then treated by a $450^{\circ}C$ temperature process to increase its detection sensitivity for NOx gas. We compared the detection characteristics of a ZnO film gas sensor, MWCNT film gas sensor, and the MWCNT/ZnO composited film gas sensor with and without the heat-treatment process. The fabricated gas sensors were used to detect $NO_X$ gas at different concentrations. The gas sensor absorbed $NO_X$ gas molecules, exhibiting increased sensitivity. The sensitivity of the gas sensor was increased by increasing the gas concentration. Additionally, while changing the temperature inside the chamber for the MWCNT/ZnO composite film gas sensor, we obtained its sensitivity for detecting $NO_X$ gas. Compared with ZnO, the MWCNT film gas sensor is excellent for detecting $NO_X$ gas. From the experimental results, we confirmed the enhanced gas sensor sensing mechanism. The increased effect by electronic interaction between the MWCNT and ZnO films contributes to the improved sensor performance.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.241-246
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• 2018

$TaN_x$ film is grown by plasma enhanced atomic layer deposition (PEALD) using t-butylimido tris(dimethylamido) tantalum as a metalorganic source with various reactive gas species, such as $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. Although the pulse sequence and duration are the same, aspects of the film growth rate, microstructure, crystallinity, and electrical resistivity are quite different according to the reactive gas. Crystallized and relatively conductive film with a higher growth rate is acquired using $NH_3$ as a reactive gas while amorphous and resistive film with a lower growth rate is achieved using $N_2+H_2$ mixed gas. To examine the relationship between the chemical properties and resistivity of the film, X-ray photoelectron spectroscopy (XPS) is conducted on the ALD-grown $TaN_x$ film with $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. For a comparison, reactive sputter-grown $TaN_x$ film with $N_2$ is also studied. The results reveal that ALD-grown $TaN_x$ films with $NH_3$ and $H_2$ include a metallic Ta-N bond, which results in the film's higher conductivity. Meanwhile, ALD-grown $TaN_x$ film with a $N_2+H_2$ mixed gas or sputtergrown $TaN_x$ film with $N_2$ gas mainly contains a semiconducting $Ta_3N_5$ bond. Such a different portion of Ta-N and $Ta_3N_5$ bond determins the resistivity of the film. Reaction mechanisms are considered by means of the chemistry of the Ta precursor and reactive gas species.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.5-11
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• 2008

To study the effects of $H_2$ gas on AIN insulation thin film, we prepared AIN thin film on Si and GaAs substrate by means of reactive sputtering method using $H_2$ gas as an additives, With treatment conditions of $H_2$ gas AIN thin film shows variable electrical properties such as its crystallization and hysterisis affected to electrical property, As a results, AIN thin film fabricated on Si substrate post-treated with $H_2$ gas for 20 minutes shows much better an insulation property than that of pre-treated, And AIN film treated with $H_2$ gas comparing to non-treated AIN film shows a flat band voltage decreasment. But In GaAs substrate $H_2$ gas does not effect on the flat band voltage.

• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.183-188
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• 1998

Gas sensitizations of tin oxide film were investigated by measuring the change of film resistance in various gas atmospheres such as $N_2,\; O_2,\; H_2O$. The main test sample, polycrystalline $SnO_2$ film containing small Sb as a dopant was prepared by a sputtering technique and showed a long term stability in base resistance and thus, in gas sensitivity. The adsorption of oxygen on the film surface as a type of $(O_{ads})$ at the temperature of around $300^{\circ}C$ played important roles in sensor operating mechanism. The roles were ⅰ) the increase of base resistance in ambient air, which consequently lead to high sensitivity and ⅱ) the promotion of fast recovery. The reaction of hydrogen gas with the already adsorbed $(O_{ads})$ ions was considered as a decisive sensitization mechanism of tin oxide film. However, the dissociation of hydrogen molecules on film surface, by direct donation of electron to film also took a major part in the sensitization. The effect of humidity on gas sensitization was found to be negligible at the sensor operating temperature of around $300^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.483-486
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• 2000

In the recognition of the gases using the quartz crystal rnicrobalance (QCM) coated with the film materials, it is important to obtain the recognition ability of gases, and the stability of film coated above the QCM. Especially, the thickness of film coated above the QCM is decreased according with the using circumstance and time of QCM gas sensor. Therefore, the sensing chararcteristics of film is changed with these. In this paper, we coated the lipid GC materials varing with the blended amount of PVC(Po1y Vinyl Chloride) and solution (Tetra Hydrofan:THF) above QCM to obtain the stability of lipid PC film. QCM gas sensors coated with film materials were measured the frequency change in the chamber of stationary gas sensing system injected 1-hexane, ethyl acetate, ethanol and benzene of 20.4 respectively. Also, we measured the degradation characteristics of QCM gas sensor to show the properties of stability.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2120-2122
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• 1999

$SF_6$ gas has been widely used the gas insulated transmission line, gas insulated transformer and gas insulated substation and Polyester film used as the turn insulation with other material. $SF_6$ gas has been actively studied in domestic and foreign countries. In general, when dielectric surface electric field exceed any electric field strength on air, corona discharge is occurred from the dielectric surface. This paper presents the insulation strength of turn insulation of $SF_6$-PET film studied under application of AC voltage, constitute of the plane to plane with PET Film. The results obtained in experimental are summarized that Partial Discharge Initial Voltage(PDIV) of turn insulation depend on gas pressure, but Breakdown Voltage(BDV) did not depend on gas pressure.

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.428-433
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• 2007

$SnO_{2}$-based thick film ethanol gas sensors were fabricated on alumina substrates and their ethanol gas sensing characteristics were investigated. The film sintered at $400^{\circ}C$ for 2 hrs. showed the highest sensitivity to ethanol gas and the sensitivity of the film to 1000 ppm ethanol gas in air was 97 % at an operating temperature of $250^{\circ}C$. The addition of $Fe_{2}O_{3}$ to $SnO_{2}$ enhanced the sensitivity by changing the type and number of surface acidic/basic sites.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.5
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• pp.312-316
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• 2016

In this study, we fabricated $NO_x$ gas sensor by using multi-walled carbon nanotubes(MWCNT)/zinc oxide(ZnO) composite film. Carbon nanotubes (CNTs) have good electronic, chemical-stability, and sensitivity characteristics. And zinc oxide (ZnO) is a wide band gap and large exciton binding energy semiconductor. In particular, gas sensors require characteristics such as high speed, sensitivity, and selectivity. The fabricated gas sensor was used to detect $NO_x$ gas for different values of the $NO_x$ gas concentrations. The gas sensor that absorbed$NO_x$ gas molecules showed a increasing in resistance. The sensitivity of the gas sensor was increased by increasing the gas concentrations. Additionally, while changing the temperature inside the chamber for the MWCNT/ZnO composite film gas sensor, we obtained the sensitivity. And the comparison analysis to ZnO film gas sensor for detecting $NO_x$ gas. From the experiment result, we confirmed improvement of $NO_x$ gas detection characteristics using the MWCNT/ZnO composite film.