Browse > Article
http://dx.doi.org/10.4313/JKEM.2018.31.7.521

The Detection Characterization of NOX Gas Using the MWCNT/ZnO Composite Film Gas Sensors by Heat Treatment  

Kim, Hyun-Soo (Department of Smart Media, Chungkang College of Cultural Industries)
Jang, Kyung-Uk (Department of Electrical Engineering, Gachon University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.31, no.7, 2018 , pp. 521-526 More about this Journal
Abstract
In particular, gas sensors require characteristics such as high speed, sensitivity, and selectivity. In this study, we fabricated a $NO_X$ gas sensor by using a multi-walled carbon nanotube (MWCNT)/zinc oxide (ZnO) composite film. The fabricated MWCNT/ZnO gas sensor was then treated by a $450^{\circ}C$ temperature process to increase its detection sensitivity for NOx gas. We compared the detection characteristics of a ZnO film gas sensor, MWCNT film gas sensor, and the MWCNT/ZnO composited film gas sensor with and without the heat-treatment process. The fabricated gas sensors were used to detect $NO_X$ gas at different concentrations. The gas sensor absorbed $NO_X$ gas molecules, exhibiting increased sensitivity. The sensitivity of the gas sensor was increased by increasing the gas concentration. Additionally, while changing the temperature inside the chamber for the MWCNT/ZnO composite film gas sensor, we obtained its sensitivity for detecting $NO_X$ gas. Compared with ZnO, the MWCNT film gas sensor is excellent for detecting $NO_X$ gas. From the experimental results, we confirmed the enhanced gas sensor sensing mechanism. The increased effect by electronic interaction between the MWCNT and ZnO films contributes to the improved sensor performance.
Keywords
MWCNT/ZnO composite film gas sensor; Detection mechanism; Heat treatment; Carrier concentrations;
Citations & Related Records
Times Cited By KSCI : 4  (Citation Analysis)
연도 인용수 순위
1 T. Ueda, S. Katsuki, N. H. Abhari, T. Ikegami, F. Mitsugi, and T. Nakamiya, Surf. Coat. Technol., 202, 5325 (2008). [DOI: https://doi.org/10.1016/j.surfcoat.2008.06.009]   DOI
2 K. U. Jang, J. Korean Inst. Electr. Electron. Mater. Eng., 30, 589 (2017). [DOI: https://doi.org/10.4313/JKEM.2017.30.9.589]
3 H. S. Kim and K. U. Jang, J. Korean Inst. Electr. Electron. Mater. Eng., 26, 325 (2013). [DOI: https://doi.org/10.4313/JKEM.2013.26.4.325]
4 H. S. Kim, W. J. Lee, Y. S. Park, and K. U. Jang., J. Korean Inst. Electr. Electron. Mater. Eng., 29, 312 (2016). [DOI: https://doi.org/10.4313/JKEM.2016.29.5.312]
5 J. O. Lee, KIC News, 12, 13 (2009).
6 H. S. Kim, S. H. Lee, and K. U. Jang, J. Korean Inst. Electr. Electron. Mater. Eng., 26, 707 (2013). [DOI: https://doi.org/10.4313/JKEM.2013.26.9.707]
7 J. H. Son, H. S. Kim, Y. S. Park, and K. U. Jang. J. Korean Inst. Electr. Electron. Mater. Eng., 31, 188 (2018). [DOI: https://doi.org/10.4313/JKEM.2018.31.3.188]
8 B. A. Albiss, W. A. Safhaneh, I. Jumah, and I. M. Obaidat, IEEE Sens. J., 10, 1807 (2010). [DOI: https://doi.org/10.1109/JSEN.2010.2049739]   DOI
9 E. S. Ahn, H. C. Jung, N. L. Hung, D. H. Oh, H. J. Kim, and D. J. Kim, Korean J. Mater. Res., 19, 631 (2009). [DOI: https://doi.org/10.3740/MRSK.2009.19.11.631]   DOI
10 M. K. Kwon and Y. T. Hong, J. Korean Inst. Electr. Electron. Mater. Eng., 22, 151 (2009). [DOI: https://doi.org/10.4313/JKEM.2009.22.2.151]
11 L. Wang, S. Wang, H. Zhang, Y. Wang, J. Yang, and W. Huang, New J. Chem., 38, 2530 (2014). [DOI: https://doi.org/10.1039/c3nj01562a]   DOI
12 J. Zhang, S. Wang, Y. Wang, M. Xu, H. Xia, S. Zhang, W. Huang, X. Guo, and S. Wu, Sens. Actuators, B, 139, 411 (2009). [DOI: https://doi.org/10.1016/j.snb.2009.03.014]   DOI
13 H. S. Kim, K. U. Jang, and T. W. Kim, J. Korean Phys. Soc., 68, 797 (2016). [DOI: https://doi.org/10.3938/jkps.68.797]   DOI
14 A. Abdellah, A. Abdelhalim, F. Loghin, P. Kohler, Z. Ahmad, G. Scarpa, and P. Lugli, IEEE Sens. J., 13, 4014 (2013). [DOI: https://doi.org/10.1109/JSEN.2013.2265775]   DOI
15 L. Wang, S. Wang, M. Xu, X. Hu, H. Zhang, Y. Wang, and W. Huang, Phys. Chem. Chem. Phys., 15, 17179 (2013). [DOI: https://doi.org/10.1039/c3cp52392f]   DOI
16 Z. Song, Z. Wei, B. Wang, Z. Luo, S. Xu, W. Zhang, H. Yu, M. Li, Z. Huang, J. Zang, F. Yi, and H. Liu, Chem. Mater., 28, 1205 (2016). [DOI: https://doi.org/10.1021/acs.chemmater.5b04850]   DOI
17 J. G. Park and K. J. Lee, J. Kor. Inst. Met. & Mater., 13, 38 (2000).
18 L. Wang, S. Wang, H. Zhang, Y. Wang, J. Yang, and W. Huang, New J. Chem., 38, 2530 (2014). [DOI: https://doi.org/10.1039/c3nj01562a]   DOI
19 P. G. Su and T. T. Pan, Mater. Chem. Phys., 125, 351 (2001). [DOI: https://doi.org/10.1016/j.matchemphys.2010.11.001]
20 S. H. Lee, J. S. Im, S. C. Kang, T. S. Bae, S. J. In, E. Jeong, and Y. S. Lee, Chem. Phys. Lett., 497, 191 (2010). [DOI: https://doi.org/10.1016/j.cplett.2010.08.002]   DOI
21 G. Wiegleb and J. Heitbaum, Sens. Actuators, B, 17, 93 (1994). [DOI: https://doi.org/10.1016/0925-4005(94)87035-7]   DOI
22 D. E. Williams, Sens. Actuators, B, 57, 1 (1999). [DOI: https://doi.org/10.1016/S0925-4005(99)00133-1]   DOI
23 S. Iijima, Nature, 38, 556 (1991).
24 J. Suehiro, H. Imakiire, S. I. Hidaka, W. Ding, G. Zhou, K. Imsaka, and M. Hare, Sens. Actuators, B, 114, 943 (2006). [DOI: https://doi.org/10.1016/j.snb.2005.08.043]   DOI
25 K. Lee, J. W. Lee, K. Y. Dong, and B. K. Ju, Sens. Actuators, B, 135, 214 (2008). [DOI: https://doi.org/10.1016/j.snb.2008.08.031]   DOI
26 S. M. Lee, K. H. An, Y. H. Lee, G. Seifert, and T. Frauenheim, J. Am. Chem. Soc., 123, 5059 (2001). [DOI: https://doi.org/10.1021/ja003751+]   DOI
27 S. Sharma, S. Hussain, S. Singh, and S. S. Islam, Sens. Actuators, B, 194, 213 (2014). [DOI: https://doi.org/10.1016/j.snb.2013.12.050]   DOI
28 J. G. Kim, S. C. Kang, E. J. Shin, D. Y. Kim, J. H. Lee, and Y. S. Lee, Appl. Chem. Eng., 23, 47 (2012).
29 S. Ji, H. Wang, T. Wang, and D. Yan, Adv. Mater., 25, 1755 (2013). [DOI: https://doi.org/10.1002/adma.201204134]   DOI
30 E. H. Espinosa, R. Ionescu, C. Bittencourt, A. Felten, R. Erni, G. Van Tendeloo, J. J. Pireaux, and E. Llobet, Thin Solid Films, 515, 8322 (2007). [DOI: https://doi.org/10.1016/j.tsf.2007.03.017]   DOI